Method of forming bumps on a wafer utilizing a post-heating operation, and apparatus therefor
    3.
    发明授权
    Method of forming bumps on a wafer utilizing a post-heating operation, and apparatus therefor 失效
    利用后加热操作在晶片上形成凸块的方法及其装置

    公开(公告)号:US06787391B1

    公开(公告)日:2004-09-07

    申请号:US09719768

    申请日:2000-12-18

    IPC分类号: H01L2148

    摘要: A bump forming apparatus which carries out a temperature control of a type different from the conventional art in forming bumps to a semiconductor wafer, and a bump formation method executed by the bump forming apparatus are provided. A bonding stage, a load and transfer device and a control device are provided. A wafer, after having bumps formed thereon, is held by the load and transfer device and arranged above the bonding stage through control by the control device, so that a temperature drop of the wafer is controlled. Accordingly, generation of troubles such as a crack because of thermal stress and the like can be prevented to even compound semiconductor wafers sensitive to a temperature change.

    摘要翻译: 提供了一种在与半导体晶片形成凸块时进行与传统技术不同的类型的温度控制的凸块形成装置以及由凸块形成装置执行的凸块形成方法。 提供接合台,负载和传送装置以及控制装置。 在其上形成有凸块之后,晶片由负载和转移装置保持,并且通过控制装置的控制而布置在接合台上方,从而控制晶片的温度降。 因此,可以防止由于热应力等而产生诸如裂纹的故障甚至使对温度变化敏感的半导体晶片复合。

    Method of forming bumps on a wafer utilizing a post-heating operation, and an apparatus therefore
    6.
    发明授权
    Method of forming bumps on a wafer utilizing a post-heating operation, and an apparatus therefore 失效
    利用后加热操作在晶片上形成凸块的方法,以及装置

    公开(公告)号:US07387229B2

    公开(公告)日:2008-06-17

    申请号:US10761412

    申请日:2004-01-22

    IPC分类号: B23K37/04

    摘要: A bump forming apparatus which carries out a temperature control of a type different from the conventional art in forming bumps to a semiconductor wafer, and a bump formation method executed by the bump forming apparatus are provided. A bonding stage, a load and transfer device and a control device are provided. A wafer, after having bumps formed thereon, is held by the load and transfer device and arranged above the bonding stage through control by the control device, so that a temperature drop of the wafer is controlled. Accordingly, generation of troubles such as a crack because of thermal stress and the like can be prevented to even compound semiconductor wafers sensitive to a temperature change.

    摘要翻译: 提供了一种在与半导体晶片形成凸块时进行与传统技术不同的类型的温度控制的凸块形成装置以及由凸块形成装置执行的凸块形成方法。 提供接合台,负载和传送装置以及控制装置。 在其上形成有凸块之后,晶片由负载和转移装置保持,并且通过控制装置的控制而布置在接合台上方,从而控制晶片的温度降。 因此,可以防止由于热应力等而产生诸如裂纹的故障甚至使对温度变化敏感的半导体晶片复合。

    ELECTRIC CHARGE GENERATING SEMICONDUCTOR SUBSTRATE BUMP FORMING DEVICE, METHOD OF REMOVING ELECTRIC CHARGE FROM ELECTRIC CHARGE GENERATING SEMICONDUCTOR SUBSTRATE DEVICE FOR REMOVING ELECTRIC CHARGE FROM ELECTRIC CHARGE GENERATING SEMICONDUCTOR SUBSTRATE, AND ELECTRIC CHARGE GENERATING SEMICONDUCTOR SUBSTRATE
    10.
    发明授权
    ELECTRIC CHARGE GENERATING SEMICONDUCTOR SUBSTRATE BUMP FORMING DEVICE, METHOD OF REMOVING ELECTRIC CHARGE FROM ELECTRIC CHARGE GENERATING SEMICONDUCTOR SUBSTRATE DEVICE FOR REMOVING ELECTRIC CHARGE FROM ELECTRIC CHARGE GENERATING SEMICONDUCTOR SUBSTRATE, AND ELECTRIC CHARGE GENERATING SEMICONDUCTOR SUBSTRATE 失效
    电荷生成半导体基板保存形成装置的方法,从电荷产生电子基板去除电荷的方法,用于从电荷产生半导体基板去除电荷和电荷产生半导体基板

    公开(公告)号:US06818975B1

    公开(公告)日:2004-11-16

    申请号:US10019700

    申请日:2002-01-02

    IPC分类号: H01L2302

    CPC分类号: H01L21/67144 H01L21/67138

    摘要: The present invention provides a bump forming apparatus (101, 501) which can prevent charge appearance semiconductor substrates (201, 202) from pyroelectric breakdown and physical failures, a method carried out by the bump forming apparatus for removing charge of charge appearance semiconductor substrates, a charge removing unit for charge appearance semiconductor substrates, and a charge appearance semiconductor substrate. At least when the wafer is cooled after the bump bonding is connected on the wafer, electric charge accumulated on the wafer (202) because of the cooling is removed through direct contact with a post-forming bumps heating device (170), or the charge is removed by a decrease in temperature control so that charge can be removed in a noncontact state. Therefore, an amount of charge of the wafer can be reduced in comparison with the conventional art, so that the wafer is prevented from pyroelectric breakdown and damage such as a break or the like to the wafer itself.

    摘要翻译: 本发明提供一种可防止电荷外观半导体衬底(201,202)发生热释电和物理故障的凸块形成装置(101,501),用于去除电荷外观半导体衬底的电荷的凸块形成装置执行的方法, 用于电荷外观半导体衬底的电荷去除单元和电荷外观半导体衬底。 至少当在晶片上连接凸起接合之后晶片被冷却时,由于冷却而积聚在晶片(202)上的电荷通过与后成形凸块加热装置(170)直接接触而被去除,或者电荷 通过降低温度控制来去除,从而可以在非接触状态下去除电荷。 因此,与传统技术相比,可以减少晶片的电荷量,从而防止晶片对晶片本身的热释电和损坏(例如断裂等)。