公开(公告)号：US20080179378A1

公开(公告)日：2008-07-31

申请号：US11980565

申请日：2007-10-31

申请人： Makoto Imanishi ,  Shoriki Narita ,  Masahiko Ikeya ,  Shinji Kanayama ,  Takaharu Mae

发明人： Makoto Imanishi ,  Shoriki Narita ,  Masahiko Ikeya ,  Shinji Kanayama ,  Takaharu Mae

IPC分类号： B23K37/00

CPC分类号： H01L21/67288 ,  H01L21/67144 ,  H01L21/67248 ,  H01L2924/0002 ,  H01L2924/00

摘要： A bump forming apparatus which carries out a temperature control of a type different from the conventional art in forming bumps to a semiconductor wafer, and a bump formation method executed by the bump forming apparatus are provided. A bonding stage, a load and transfer device and a control device are provided. A wafer, after having bumps formed thereon, is held by the load and transfer device and arranged above the bonding stage through control by the control device, so that a temperature drop of the wafer is controlled. Accordingly, generation of troubles such as a crack because of thermal stress and the like can be prevented to even compound semiconductor wafers sensitive to a temperature change.

公开(公告)号：US06910613B2

公开(公告)日：2005-06-28

申请号：US10332026

申请日：2001-06-29

申请人： Shoriki Narita ,  Koichi Yoshida ,  Masahiko Ikeya ,  Takaharu Mae ,  Shinji Kanayama ,  Makoto Imanishi ,  Kazushi Higashi ,  Kenji Fukumoto ,  Hiroshi Wada

发明人： Shoriki Narita ,  Koichi Yoshida ,  Masahiko Ikeya ,  Takaharu Mae ,  Shinji Kanayama ,  Makoto Imanishi ,  Kazushi Higashi ,  Kenji Fukumoto ,  Hiroshi Wada

IPC分类号： H05K3/34 ,  B23K20/00 ,  H01L21/00 ,  H01L21/60 ,  B23K37/00 ,  H01L21/44

CPC分类号： H01L24/742 ,  H01L21/67138 ,  H01L21/67144 ,  H01L21/67248 ,  H01L24/11 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/1134 ,  H01L2224/13099 ,  H01L2224/13144 ,  H01L2224/45144 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01025 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01047 ,  H01L2924/01052 ,  H01L2924/01065 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/10329 ,  H01L2924/351 ,  Y10T29/4921 ,  H01L2924/00 ,  H01L2924/00014

摘要： A preheat device (160) is provided to execute, before forming bumps (16) to electrode parts (15), a pre-formation temperature control for bonding promotion to promote bonding between the electrode parts and the bumps during bump formation. Metal particles of the electrode parts can be changed to an appropriate state before the bump formation. Phenomenally, a bonding state between the electrode parts and the bumps can be improved as compared with the conventional art. In a further arrangement of the present invention, semiconductor components with bumps can be heated under a bonding strength improvement condition by a bonding stage (316) through controlling the heating by a controller (317).

摘要翻译： 提供预热装置（160），用于在形成凸起（16）到电极部件（15）之前执行用于粘合促进的预制温度控制，以促进在凸块形成期间电极部分和凸块之间的结合。 电极部分的金属颗粒可以在凸点形成之前变成适当的状态。 与现有技术相比，现在可以改善电极部分和凸块之间的结合状态。 在本发明的另一方面中，通过控制器（317）的加热来控制加热，可以通过接合台（316）在接合强度改善条件下加热具有凸块的半导体部件。

公开(公告)号：US20050191838A1

公开(公告)日：2005-09-01

申请号：US11114084

申请日：2005-04-26

申请人： Shoriki Narita ,  Koichi Yoshida ,  Masahiko Ikeya ,  Takaharu Mae ,  Shinji Kanayama ,  Makoto Imanishi ,  Kazushi Higashi ,  Kenji Fukumoto ,  Hiroshi Wada

发明人： Shoriki Narita ,  Koichi Yoshida ,  Masahiko Ikeya ,  Takaharu Mae ,  Shinji Kanayama ,  Makoto Imanishi ,  Kazushi Higashi ,  Kenji Fukumoto ,  Hiroshi Wada

IPC分类号： H05K3/34 ,  B23K20/00 ,  H01L21/00 ,  H01L21/60 ,  H01L21/44

CPC分类号： H01L24/742 ,  H01L21/67138 ,  H01L21/67144 ,  H01L21/67248 ,  H01L24/11 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/1134 ,  H01L2224/13099 ,  H01L2224/13144 ,  H01L2224/45144 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01025 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01047 ,  H01L2924/01052 ,  H01L2924/01065 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/10329 ,  H01L2924/351 ,  Y10T29/4921 ,  H01L2924/00 ,  H01L2924/00014

摘要： A preheat device (160) is provided to execute, before forming bumps (16) to electrode parts (15), a pre-formation temperature control for bonding promotion to promote bonding between the electrode parts and the bumps during bump formation. Metal particles of the electrode parts can be changed to an appropriate state before the bump formation. Phenomenally, a bonding state between the electrode parts and the bumps can be improved as compared with the conventional art. In a further arrangement of the present invention, semiconductor components with bumps can be heated under a bonding strength improvement condition by a bonding stage (316) through controlling the heating by a controller (317).

摘要翻译： 提供预热装置（160），用于在形成凸起（16）到电极部件（15）之前执行用于粘接促进的预制温度控制，以促进在凸起形成期间电极部件和凸块之间的接合。 电极部分的金属颗粒可以在凸点形成之前变成适当的状态。 与现有技术相比，现在可以改善电极部分和凸块之间的结合状态。 在本发明的另一方面中，通过控制器（317）的加热来控制加热，可以通过接合台（316）在接合强度改善条件下加热具有凸块的半导体部件。

公开(公告)号：US06787391B1

公开(公告)日：2004-09-07

申请号：US09719768

申请日：2000-12-18

申请人： Makoto Imanishi ,  Shoriki Narita ,  Masahiko Ikeya ,  Shinji Kanayama ,  Takaharu Mae

发明人： Makoto Imanishi ,  Shoriki Narita ,  Masahiko Ikeya ,  Shinji Kanayama ,  Takaharu Mae

IPC分类号： H01L2148

CPC分类号： H01L21/67288 ,  H01L21/67144 ,  H01L21/67248 ,  H01L2924/0002 ,  Y10T29/41 ,  H01L2924/00

摘要： A bump forming apparatus which carries out a temperature control of a type different from the conventional art in forming bumps to a semiconductor wafer, and a bump formation method executed by the bump forming apparatus are provided. A bonding stage, a load and transfer device and a control device are provided. A wafer, after having bumps formed thereon, is held by the load and transfer device and arranged above the bonding stage through control by the control device, so that a temperature drop of the wafer is controlled. Accordingly, generation of troubles such as a crack because of thermal stress and the like can be prevented to even compound semiconductor wafers sensitive to a temperature change.

摘要翻译： 提供了一种在与半导体晶片形成凸块时进行与传统技术不同的类型的温度控制的凸块形成装置以及由凸块形成装置执行的凸块形成方法。 提供接合台，负载和传送装置以及控制装置。 在其上形成有凸块之后，晶片由负载和转移装置保持，并且通过控制装置的控制而布置在接合台上方，从而控制晶片的温度降。 因此，可以防止由于热应力等而产生诸如裂纹的故障甚至使对温度变化敏感的半导体晶片复合。

公开(公告)号：US07350684B2

公开(公告)日：2008-04-01

申请号：US11114084

申请日：2005-04-26

申请人： Shoriki Narita ,  Koichi Yoshida ,  Masahiko Ikeya ,  Takaharu Mae ,  Shinji Kanayama ,  Makoto Imanishi ,  Kazushi Higashi ,  Kenji Fukumoto ,  Hiroshi Wada

发明人： Shoriki Narita ,  Koichi Yoshida ,  Masahiko Ikeya ,  Takaharu Mae ,  Shinji Kanayama ,  Makoto Imanishi ,  Kazushi Higashi ,  Kenji Fukumoto ,  Hiroshi Wada

IPC分类号： B23K37/00

CPC分类号： H01L24/742 ,  H01L21/67138 ,  H01L21/67144 ,  H01L21/67248 ,  H01L24/11 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/1134 ,  H01L2224/13099 ,  H01L2224/13144 ,  H01L2224/45144 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01025 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01047 ,  H01L2924/01052 ,  H01L2924/01065 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/10329 ,  H01L2924/351 ,  Y10T29/4921 ,  H01L2924/00 ,  H01L2924/00014

摘要： A preheat device (160) is provided to execute, before forming bumps (16) to electrode parts (15), a pre-formation temperature control for bonding promotion to promote bonding between the electrode parts and the bumps during bump formation. Metal particles of the electrode parts can be changed to an appropriate state before the bump formation. Phenomenally, a bonding state between the electrode parts and the bumps can be improved as compared with the conventional art. In a further arrangement of the present invention, semiconductor components with bumps can be heated under a bonding strength improvement condition by a bonding stage (316) through controlling the heating by a controller (317).

摘要翻译： 提供预热装置（160），用于在形成凸起（16）到电极部件（15）之前执行用于粘接促进的预制温度控制，以促进在凸块形成期间电极部件和凸块之间的接合。 电极部分的金属颗粒可以在凸点形成之前变成适当的状态。 与现有技术相比，现在可以改善电极部分和凸块之间的结合状态。 在本发明的另一方面中，通过控制器（317）的加热来控制加热，可以通过接合台（316）在接合强度改善条件下加热具有凸块的半导体部件。

公开(公告)号：US07387229B2

公开(公告)日：2008-06-17

申请号：US10761412

申请日：2004-01-22

申请人： Makoto Imanishi ,  Shoriki Narita ,  Masahiko Ikeya ,  Shinji Kanayama ,  Takaharu Mae

发明人： Makoto Imanishi ,  Shoriki Narita ,  Masahiko Ikeya ,  Shinji Kanayama ,  Takaharu Mae

IPC分类号： B23K37/04

CPC分类号： H01L21/67288 ,  H01L21/67144 ,  H01L21/67248 ,  H01L2924/0002 ,  Y10T29/41 ,  H01L2924/00

摘要： A bump forming apparatus which carries out a temperature control of a type different from the conventional art in forming bumps to a semiconductor wafer, and a bump formation method executed by the bump forming apparatus are provided. A bonding stage, a load and transfer device and a control device are provided. A wafer, after having bumps formed thereon, is held by the load and transfer device and arranged above the bonding stage through control by the control device, so that a temperature drop of the wafer is controlled. Accordingly, generation of troubles such as a crack because of thermal stress and the like can be prevented to even compound semiconductor wafers sensitive to a temperature change.

摘要翻译： 提供了一种在与半导体晶片形成凸块时进行与传统技术不同的类型的温度控制的凸块形成装置以及由凸块形成装置执行的凸块形成方法。 提供接合台，负载和传送装置以及控制装置。 在其上形成有凸块之后，晶片由负载和转移装置保持，并且通过控制装置的控制而布置在接合台上方，从而控制晶片的温度降。 因此，可以防止由于热应力等而产生诸如裂纹的故障甚至使对温度变化敏感的半导体晶片复合。

公开(公告)号：US20060102701A1

公开(公告)日：2006-05-18

申请号：US11317146

申请日：2005-12-27

申请人： Shoriki Narita ,  Masahiko Ikeya ,  Yasutaka Tsuboi ,  Takaharu Mae ,  Shinji Kanayama

发明人： Shoriki Narita ,  Masahiko Ikeya ,  Yasutaka Tsuboi ,  Takaharu Mae ,  Shinji Kanayama

IPC分类号： B23K31/02 ,  B23Q15/00 ,  B23K13/08 ,  B23K31/00

CPC分类号： H01L23/544 ,  B23K20/007 ,  H01L24/11 ,  H01L24/12 ,  H01L2223/54453 ,  H01L2223/54473 ,  H01L2223/5448 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/1134 ,  H01L2224/13099 ,  H01L2224/45144 ,  H01L2224/78301 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/14 ,  H01L2924/00 ,  H01L2224/05599

摘要： A bump formation method and a bump forming apparatus for a semiconductor wafer are provided in which productivity when bumps are formed onto the semiconductor wafer is improved as compared with the conventional art. There are provided a bump forming head, a recognition device, and a control device. ICs formed on the semiconductor wafer are divided into basic blocks. Bump formation is performed continuously for the ICs included in one basic block. Positional recognition for the other basic blocks is performed only when the bump formation operation is shifted from one basic block to another basic block. Thus, in comparison with the conventional art whereby a positional recognition operation is performed every time bumps are formed on each IC, the number of times of performing positional recognition is greatly reduced, so that productivity can be improved.

公开(公告)号：US07052984B2

公开(公告)日：2006-05-30

申请号：US10415587

申请日：2001-11-16

申请人： Shoriki Narita ,  Masahiko Ikeya ,  Yasutaka Tsuboi ,  Takaharu Mae ,  Shinji Kanayama

发明人： Shoriki Narita ,  Masahiko Ikeya ,  Yasutaka Tsuboi ,  Takaharu Mae ,  Shinji Kanayama

IPC分类号： H01L21/44

CPC分类号： H01L23/544 ,  B23K20/007 ,  H01L24/11 ,  H01L24/12 ,  H01L2223/54453 ,  H01L2223/54473 ,  H01L2223/5448 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/1134 ,  H01L2224/13099 ,  H01L2224/45144 ,  H01L2224/78301 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/14 ,  H01L2924/00 ,  H01L2224/05599

摘要： A bump formation method and a bump forming apparatus for a semiconductor wafer are provided in which productivity when bumps are formed onto the semiconductor wafer is improved as compared with the conventional art. There are provided a bump forming head, a recognition device, and a control device. ICs formed on the semiconductor wafer are divided into basic blocks. Bump formation is performed continuously for the ICs included in one basic block. Positional recognition for the other basic blocks is performed only when the bump formation operation is shifted from one basic block to another basic block. Thus, in comparison with the conventional art whereby a positional recognition operation is performed every time bumps are formed on each IC, the number of times of performing positional recognition is greatly reduced, so that productivity can be improved.

公开(公告)号：US07516878B2

公开(公告)日：2009-04-14

申请号：US11317146

申请日：2005-12-27

申请人： Shoriki Narita ,  Masahiko Ikeya ,  Yasutaka Tsuboi ,  Takaharu Mae ,  Shinji Kanayama

发明人： Shoriki Narita ,  Masahiko Ikeya ,  Yasutaka Tsuboi ,  Takaharu Mae ,  Shinji Kanayama

IPC分类号： B23K37/00 ,  B23K37/04

CPC分类号： H01L23/544 ,  B23K20/007 ,  H01L24/11 ,  H01L24/12 ,  H01L2223/54453 ,  H01L2223/54473 ,  H01L2223/5448 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/1134 ,  H01L2224/13099 ,  H01L2224/45144 ,  H01L2224/78301 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/14 ,  H01L2924/00 ,  H01L2224/05599

摘要： A bump formation method and a bump forming apparatus for a semiconductor wafer are provided in which productivity when bumps are formed onto the semiconductor wafer is improved as compared with the conventional art. There are provided a bump forming head, a recognition device, and a control device. ICs formed on the semiconductor wafer are divided into basic blocks. Bump formation is performed continuously for the ICs included in one basic block. Positional recognition for the other basic blocks is performed only when the bump formation operation is shifted from one basic block to another basic block. Thus, in comparison with the conventional art whereby a positional recognition operation is performed every time bumps are formed on each IC, the number of times of performing positional recognition is greatly reduced, so that productivity can be improved.

摘要翻译： 提供了一种用于半导体晶片的凸块形成方法和凸块形成装置，其中与常规技术相比，提高了在半导体晶片上形成凸块时的生产率。 提供了凸块形成头，识别装置和控制装置。 形成在半导体晶片上的IC被分成基本块。 对于包含在一个基本块中的IC，连续执行凸块形成。 只有当凸块形成操作从一个基本块移动到另一个基本块时，才执行其他基本块的位置识别。 因此，与在每个IC上形成凸块时进行位置识别操作的现有技术相比，大大降低了执行位置识别的次数，从而可以提高生产率。

公开(公告)号：US07031509B2

公开(公告)日：2006-04-18

申请号：US09988704

申请日：2001-11-20

申请人： Shoriki Narita ,  Masahiko Ikeya ,  Yasutaka Tsuboi ,  Takaharu Mae ,  Shinji Kanayama

发明人： Shoriki Narita ,  Masahiko Ikeya ,  Yasutaka Tsuboi ,  Takaharu Mae ,  Shinji Kanayama

IPC分类号： G06K9/00

CPC分类号： G06T1/0007 ,  G06T7/0002 ,  G06T7/0004 ,  G06T7/73 ,  G06T2207/30148 ,  H01L21/681 ,  H01L23/544 ,  H01L24/11 ,  H01L2223/54473 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/13099 ,  H01L2224/45144 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/14 ,  H01L2924/00 ,  H01L2224/05599

摘要： There are provided a recognition device, a wafer turning member, a turning device, and a control device. A first detection point for recognition and a second detection point for recognition are recognized, on the basis of the result of which a semiconductor wafer is turned to correct the inclination of ICs on the semiconductor wafer. As a result, the recognition operation for detecting the inclination of the ICs when a position of the ICs is to be recognized for bump formation is eliminated. The number of times the recognition is performed is reduced in comparison with the conventional art, so that the productivity can be improved.

摘要翻译： 提供了识别装置，晶片转动构件，转向装置和控制装置。 基于转换半导体晶片以校正半导体晶片上的IC的倾斜度的结果，识别用于识别的第一检测点和用于识别的第二检测点。 结果，消除了当识别用于凸块形成的IC的位置时用于检测IC的倾斜度的识别操作。 与传统技术相比，执行识别的次数减少，从而可以提高生产率。