Manufacturing method for semiconductor device
    1.
    发明授权
    Manufacturing method for semiconductor device 失效
    半导体器件的制造方法

    公开(公告)号:US06319763B1

    公开(公告)日:2001-11-20

    申请号:US09497500

    申请日:2000-02-04

    IPC分类号: H01L218242

    摘要: A lower capacitor electrode is formed on an interlayer dielectric, and then a resultant specimen is subjected to reduction and thermal nitriding in an ammonia gas atmosphere in a deposition chamber wherein pressure has been reduced to a range from 533 Pa to 1333 Pa. A silicon nitride film is then formed on the lower electrode and the interlayer dielectric. A time for carrying out the reduction and thermal nitriding is longer than a film thickness saturation time of the silicon nitride film formed on the interlayer dielectric.

    摘要翻译: 在层间电介质上形成下层电容电极,然后将所得样品在沉积室中的氨气气氛中进行还原和热氮化,其中压力已经降低到533Pa至1333Pa,氮化硅 然后在下电极和层间电介质上形成膜。 进行还原和热氮化的时间比形成在层间电介质上的氮化硅膜的膜厚饱和时间长。

    TFT substrate, method for producing same, and display device
    2.
    发明授权
    TFT substrate, method for producing same, and display device 有权
    TFT基板,其制造方法以及显示装置

    公开(公告)号:US09081243B2

    公开(公告)日:2015-07-14

    申请号:US14127844

    申请日:2012-06-15

    摘要: A TFT substrate (100) is provided with TFTs disposed on a substrate (2), first insulating layers (24, 26) disposed above the TFTs, a lower layer transparent electrode (12) disposed above the first insulating layers (24, 26), a second insulating layer (28) covering the lower layer transparent electrode (12), and pixel electrodes (10) disposed on the second insulating layer (28), in which an auxiliary capacitance (Cs) is formed by means of the lower layer transparent electrode (12), the second insulating layer (28), and the pixel electrode (10). The TFT and the pixel electrode (10) are electrically connected via a contact hole (34) penetrating the first insulating layers (24, 26) and the second insulating layer (28). A connecting transparent electrode (14) is disposed within the contact hole (34).

    摘要翻译: TFT基板(100)设置有设置在基板(2)上的TFT,设置在TFT上方的第一绝缘层(24,26),设置在第一绝缘层(24,26)上方的下层透明电极(12) ,覆盖下层透明电极(12)的第二绝缘层(28)和设置在第二绝缘层(28)上的像素电极(10),其中通过下层形成辅助电容(Cs) 透明电极(12),第二绝缘层(28)和像素电极(10)。 TFT和像素电极(10)经由穿过第一绝缘层(24,26)和第二绝缘层(28)的接触孔(34)电连接。 连接透明电极(14)设置在接触孔(34)内。

    High corrosion resistance hot dip galvanized steel material
    3.
    发明授权
    High corrosion resistance hot dip galvanized steel material 有权
    高耐腐蚀热浸镀锌钢材

    公开(公告)号:US08663818B2

    公开(公告)日:2014-03-04

    申请号:US12224967

    申请日:2007-03-14

    IPC分类号: B32B15/00 B32B15/01

    摘要: The present invention provides a high corrosion resistance hot dip galvannealed steel material comprised of a Zn-based hot dip plated steel material achieving both a higher corrosion resistance of the plated layer itself by the added elements and sacrificial protection of iron metal by the plated layer or workability free of degradation caused of formation of intermetallic compounds by added elements, that is, a high corrosion resistance hot dip Zn plated steel material characterized in that an alloy plated layer containing Zn: 35 mass % or more, preferably 40 mass % or more, contains a non-equilibrium phase having a heat capacity by differential scanning calorimetry of 1 J/g or more. Furthermore, 5% or more, preferably 50% or more in terms of vol % is an amorphous phase. The alloy layer may contain, by mass %, Mg: 1 to 60% and Al: 0.07 to 59%, may further contain one or more elements selected from Cr, Mn, Fe, Co, Ni, and Cu in a total of 0.1 to 10%, and may in addition contain one or more elements of 0.1 to 10% of La, 0.1 to 10% of Ce, 0.1 to 10% of Ca, 0.1 to 10% of Sn, 0.005 to 2% of P, and 0.02 to 7% of Si.

    摘要翻译: 本发明提供一种耐腐蚀性高的浸镀热镀锌钢材,其由Zn基热浸镀钢材组成,通过添加的元素实现镀层本身的较高的耐腐蚀性,并通过镀层牺牲铁金属的牺牲保护,或 不含添加元素形成金属间化合物的劣化的可加工性,即耐腐蚀性高的镀锌钢材,其特征在于,含有Zn:35质量%以上,优选为40质量%以上的合金镀层, 含有通过差示扫描量热法测定的热容量为1J / g以上的非平衡相。 此外,以体积%计为5%以上,优选为50%以上是非晶相。 合金层可以以质量%计含有Mg:1〜60%,Al:0.07〜59%,还可以含有选自Cr,Mn,Fe,Co,Ni和Cu中的一种或多种元素,总计0.1 〜10%,另外可以含有0.1〜10%的La,0.1〜10%的Ce,0.1〜10%的Ca,0.1〜10%的Sn,0.005〜2%的P,以及 0.02〜7%的Si。

    High Corrosion Resistance Hot dip Galvanized Steel Material
    4.
    发明申请
    High Corrosion Resistance Hot dip Galvanized Steel Material 有权
    耐腐蚀性高浸镀锌钢材料

    公开(公告)号:US20090053555A1

    公开(公告)日:2009-02-26

    申请号:US12224967

    申请日:2007-03-14

    IPC分类号: B32B15/20 B32B15/01 B32B15/18

    摘要: The present invention provides a high corrosion resistance hot dip galvannealed steel material comprised of a Zn-based hot dip plated steel material achieving both a higher corrosion resistance of the plated layer itself by the added elements and sacrificial protection of iron metal by the plated layer or workability free of degradation caused of formation of intermetallic compounds by added elements, that is, a high corrosion resistance hot dip Zn plated steel material characterized in that an alloy plated layer containing Zn: 35 mass % or more, preferably 40 mass % or more, contains a non-equilibrium phase having a heat capacity by differential scanning calorimetry of 1 J/g or more. Furthermore, 5% or more, preferably 50% or more in terms of vol % is an amorphous phase. The alloy layer may contain, by mass %, Mg: 1 to 60% and Al: 0.07 to 59%, may further contain one or more elements selected from Cr, Mn, Fe, Co, Ni, and Cu in a total of 0.1 to 10%, and may in addition contain one or more elements of 0.1 to 10% of La, 0.1 to 10% of Ce, 0.1 to 10% of Ca, 0.1 to 10% of Sn, 0.005 to 2% of P, and 0.02 to 7% of Si.

    摘要翻译: 本发明提供一种耐腐蚀性高的浸镀热镀锌钢材,其由Zn基热浸镀钢材组成,通过添加的元素实现镀层本身的较高的耐腐蚀性,并通过镀层牺牲铁金属的牺牲保护,或 不含添加元素形成金属间化合物的劣化的可加工性,即耐腐蚀性高的镀锌钢材,其特征在于,含有Zn:35质量%以上,优选为40质量%以上的合金镀层, 含有通过差示扫描量热法测定的热容量为1J / g以上的非平衡相。 此外,以体积%计为5%以上,优选为50%以上是非晶相。 合金层可以以质量%计含有Mg:1〜60%,Al:0.07〜59%,还可以含有选自Cr,Mn,Fe,Co,Ni和Cu中的一种或多种元素,总计0.1 〜10%,另外可以含有0.1〜10%的La,0.1〜10%的Ce,0.1〜10%的Ca,0.1〜10%的Sn,0.005〜2%的P,以及 0.02〜7%的Si。

    Composite-molding method and injection-molding machine of different material resin
    6.
    发明授权
    Composite-molding method and injection-molding machine of different material resin 有权
    复合成型方法和不同材料树脂的注塑机

    公开(公告)号:US07070724B2

    公开(公告)日:2006-07-04

    申请号:US10326534

    申请日:2002-12-19

    申请人: Makoto Nakazawa

    发明人: Makoto Nakazawa

    IPC分类号: B29C45/16

    摘要: The present invention has an object of eliminating the holding pin trace of a composite-molding of the dichromatic molding by refilling with resin by the pushing pin and preventing the lateral-shift of the primary molding during the refilling. It is made possible to fill closed recess and cavity with resin through a communicating hole formed in the primary molding by the pushing pin. A primary cavity mold 11 and a secondary cavity mold 12 are juxtaposed at symmetrical positions of a fixed plate 1. Core molds 14 closing alternately with both thereof are juxtaposed on a rotary table 7 installed on a movable platen 4. Holding pins 15 of the primary molding 30 and a resin pushing pin 16 are installed in the core mold 14 in a way to appear and disappear in respect to a cavity. The primary molding 30 is held in contact with the surface of the secondary cavity mold by the holding pin 15. A pin hole 20 for refilling resin is formed to be opened on a surface of the core mold by retracting the pushing pin 16. A secondary cavity including the pin hole 20 is refilled with a different material resin by injection. The holding pin 15 is retracted and sunk in the surface of the cavity mold. The pushing pin 16 is moved forward to force the resin for refilling the pin hole 20 into the resin in the cavity. The regions not filled with resin due to the holding pin 15 are refilled up.

    摘要翻译: 本发明的目的是通过用推脂销填充树脂来消除二色成型件的复合成型的保持销迹线,并防止在再填充期间初级成型件的横向偏移。 通过推模形成在一次成型体中的连通孔,可以将树脂密闭的凹部和腔体填充。 主腔模11和次腔模12并置在固定板1的对称位置。 与其两者交替关闭的芯模14并置在安装在可动台板4上的旋转台7上。 一次成型体30的保持销15和树脂推压销16以相对于空腔出现和消失的方式安装在芯模14中。 主模30通过保持销15与二次模模的表面保持接触。 通过缩回推压销16,在芯模的表面上形成用于再填充树脂的销孔20。 包括针孔20的次级腔通过注射再填充不同的材料树脂。 保持销15缩回并沉入空腔模具的表面。 推动销16向前移动以迫使树脂将针孔20再填充到空腔中的树脂中。 由于保持销15而不填充树脂的区域被再填充。

    Image data recording method and frame image regenerating method
    8.
    发明授权
    Image data recording method and frame image regenerating method 失效
    图像数据记录方法和帧图像再生方法

    公开(公告)号:US06430372B2

    公开(公告)日:2002-08-06

    申请号:US09730397

    申请日:2000-12-06

    IPC分类号: G03B724

    摘要: An image data recording method for recording, in an IC memory mounted in a film cartridge, image data of one or more desired frames on developed photographic film stored in the film cartridge is provided. The image data recording method comprises the steps of: determining the residual capacity of IC memory, changing the quantity of image data of one or more desired frames to be recorded in the IC memory or erasing the data recorded in the IC memory in accordance with the determined residual capacity of IC memory, and recording the image data of one or more desired frames in the residual capacity of the IC memory.

    摘要翻译: 提供一种图像数据记录方法,用于在安装在暗盒中的IC存储器中记录存储在暗盒中的显影摄影胶片上的一个或多个所需帧的图像数据。 图像数据记录方法包括以下步骤:确定IC存储器的剩余容量,改变要记录在IC存储器中的一个或多个期望帧的图像数据量,或者根据该存储器擦除记录在IC存储器中的数据 确定IC存储器的剩余容量,并记录IC存储器的剩余容量中的一个或多个所需帧的图像数据。

    Film image reading system and image processing method
    9.
    发明授权
    Film image reading system and image processing method 失效
    电影图像阅读系统和图像处理方法

    公开(公告)号:US5740312A

    公开(公告)日:1998-04-14

    申请号:US416315

    申请日:1995-04-04

    摘要: An apparatus achieves an exposure control for getting an image with the best SN without a mechanical iris and an image processing which is good at the color-reappearance and the gradation property with a simple digital processing circuit. When the film image is read by the line sensor 14 which has an electric shutter function, the electric shutter, the film feeding speed and the analog amplifier 16 are controlled totally so as to obtain images with the best SN from high to low transmittance negatives. And, when the dot sequential R, G, B digital signals are processed digitally, the offset values and the gain volumes of the respective R, G, B are calculated based on the maximum value and the minimum value which are detected by the respective R, G, B digital signals, the calculated offset values of the respective R, G, B are added to the dot sequential R, G, B digital signals which are obtained during the re-scanning, and the calculated gain volumes of the respective R, G, B are multiplied by the offset dot-sequential R, G, B digital signals so as to adjust the white balance and the black balance.

    摘要翻译: 一种装置实现了利用简单的数字处理电路获得具有最佳SN的图像的曝光控制,而没有机械光圈和具有良好的颜色再现性和灰度特性的图像处理。 当通过具有电动快门功能的线传感器14读取胶片图像时,完全控制电动快门,胶片馈送速度和模拟放大器16,以便获得具有从高到低透射率底片的最佳SN的图像。 并且,当点数R,G,B数字信号被数字地处理时,相应的R,G,B的偏移值和增益容积根据由相应R检测的最大值和最小值计算 ,G,B数字信号,将相应的R,G,B的计算的偏移值加到在重新扫描期间获得的点连续的R,G,B数字信号中,并且计算出的相应R的增益量 ,G,B乘以偏移点顺序R,G,B数字信号,以调整白平衡和黑平衡。

    Permanent antistatic resin composition
    10.
    发明授权
    Permanent antistatic resin composition 失效
    永久抗静电树脂组合物

    公开(公告)号:US5270367A

    公开(公告)日:1993-12-14

    申请号:US859967

    申请日:1992-03-30

    IPC分类号: C08K5/00 C08K5/20 C08K5/10

    CPC分类号: C08K5/0075 Y10S524/91

    摘要: A permanent antistatic resin composition comprising a styrene/lactone block copolymer and an antistatic agent with excellent heat resistance, transparency and permanent antistatic properties is disclosed.

    摘要翻译: 公开了包含苯乙烯/内酯嵌段共聚物和具有优异的耐热性,透明性和永久抗静电性的抗静电剂的永久性抗静电树脂组合物。