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    Wafer treating solution and method for preparing the same
    1.
    发明授权
    Wafer treating solution and method for preparing the same 失效
    晶圆处理液及其制备方法

    公开(公告)号：US6159865A

    公开(公告)日：2000-12-12

    申请号：US523216

    申请日：2000-03-10

    申请人： Takehiko Kezuka ,  Makoto Suyama ,  Fumihiro Kamiya ,  Mitsushi Itano

    发明人： Takehiko Kezuka ,  Makoto Suyama ,  Fumihiro Kamiya ,  Mitsushi Itano

    IPC分类号： C11D1/22 ,  C11D1/24 ,  C11D1/29 ,  C11D3/02 ,  C11D3/39 ,  C11D7/08 ,  C11D11/00 ,  H01L21/306 ,  H01L21/302 ,  C09K13/00 ,  C09K13/04 ,  C09K13/06 ,  C09K13/08

    CPC分类号： H01L21/02052 ,  C11D1/24 ,  C11D1/29 ,  C11D3/042 ,  C11D3/3947 ,  C11D7/08 ,  C11D11/0047

    摘要： The present invention provides a wafer treating solution in which at least one of C.sub.n H.sub.2n+1 ph(SO.sub.3 M)Oph(SO.sub.3 M) wherein ph is a phenylene group, n is 5 to 20, and M is a hydrogen or salt; C.sub.n H.sub.2n+1 phO(CH.sub.2 CH.sub.2 O)mSO.sub.3 M wherein ph is a phenylene group, n is 5 to 20, m is 0 to 20, and M is a hydrogen or salt; and C.sub.n H.sub.2n+1 O(CH.sub.2 CH.sub.2 O)mSO.sub.3 M wherein n is 5 to 20, m is 0 to 20, and M is a hydrogen or salt, is dissolved in 0.1 to 1000 ppm into a 20 to 60 wt % of hydrogen fluoride (HF), and the remainder is water (100 wt % in total), and a method for preparing a low concentration of wafer treating solution by adding water, H.sub.2 O.sub.2, HNO.sub.3, CH.sub.3 COOH, NH.sub.4 F or the like, into the above solution. The present invention also provides a wafer treating solution in which at least one of surfactants represented by C.sub.n H.sub.2n+1 ph(SO.sub.3 M)Oph(SO.sub.3 M) wherein ph is a phenylene group, n is 5 to 20, and M is a hydrogen or salt; C.sub.n H.sub.2n+1 phO(CH.sub.2 CH.sub.2 O)mSO.sub.3 M wherein ph is a phenylene group, n is 5 to 20, m is 0 to 20, and M is a hydrogen or salt; and C.sub.n H.sub.2n+1 O(CH.sub.2 CH.sub.2 O)mSO.sub.3 M wherein n is 5 to 20, m is 0 to 20, and M is a hydrogen or salt, is dissolved in 0.01 to 1000 ppm in at least one of HF, H.sub.2 O.sub.2, HNO.sub.3, CH.sub.3 COOH, NH.sub.4 F, HCl, H.sub.3 PO.sub.4 and an ammonium hydroxide represented by a formula:[(R.sub.1)(R.sub.2)(R.sub.3)(R.sub.4)N].sup.+ OH.sup.-wherein R.sub.1, R.sub.2, R.sub.3 and R.sub.4 are an alkyl group of 1 to 6 carbon atoms which may have a hydroxyl group as a substitutent, and the remainder is water (100 wt % in total).

    摘要翻译： 本发明提供一种晶片处理溶液，其中ph为亚苯基，n为5〜20，M为氢或盐的CnH2n + 1ph（SO3M）Oph（SO3M）中的至少一种; C n H 2n + 1phO（CH 2 CH 2 O）m SO 3 M，其中ph为亚苯基，n为5至20，m为0至20，M为氢或盐; 和C n H 2n + 10（CH 2 CH 2 O）m SO 3 M，其中n为5至20，m为0至20，M为氢或盐，溶解在20至60重量％的氟化氢（HF）中，为0.1至1000ppm， 其余为水（总计100重量％），以及通过向上述溶液中加入水，H 2 O 2，HNO 3，CH 3 COOH，NH 4 F等制备低浓度晶片处理溶液的方法。 本发明还提供一种晶片处理溶液，其中至少一种由CnH2n + 1ph（SO3M）Oph（SO3M）表示的表面活性剂，其中ph为亚苯基，n为5至20，M为氢或盐; C n H 2n + 1phO（CH 2 CH 2 O）m SO 3 M，其中ph为亚苯基，n为5至20，m为0至20，M为氢或盐; 和C n H 2n + 10（CH 2 CH 2 O）m SO 3 M，其中n为5至20，m为0至20，M为氢或盐，在HF，H 2 O 2，HNO 3，CH 3 COOH，NH 4 F中的至少一种中溶解于0.01至1000ppm ，HCl，H 3 PO 4和由式[R 1）（R 2）（R 3）（R 4）N] + OH表示的氢氧化铵，其中R 1，R 2，R 3和R 4是1至6个碳原子的烷基， 可以具有羟基作为取代基，其余为水（总共100重量％）。

    Wafer-cleaning solution and process for the production thereof
    2.
    发明授权
    Wafer-cleaning solution and process for the production thereof 失效
    晶圆清洗液及其生产方法

    公开(公告)号：US6068788A

    公开(公告)日：2000-05-30

    申请号：US51492

    申请日：1998-04-22

    申请人： Takehiko Kezuka ,  Makoto Suyama ,  Fumihiro Kamiya ,  Mitsushi Itano

    发明人： Takehiko Kezuka ,  Makoto Suyama ,  Fumihiro Kamiya ,  Mitsushi Itano

    IPC分类号： C11D1/22 ,  C11D1/24 ,  C11D1/29 ,  C11D3/02 ,  C11D3/39 ,  C11D7/08 ,  C11D11/00 ,  H01L21/306 ,  C09K13/04 ,  C09K13/06

    CPC分类号： H01L21/02052 ,  C11D1/24 ,  C11D1/29 ,  C11D11/0047 ,  C11D3/042 ,  C11D3/3947 ,  C11D7/08

    摘要： The present invention provides a wafer treating solution in which at least one of C.sub.n H.sub.2n+1 ph(SO.sub.3 M)Oph(SO.sub.3 M) wherein ph is a phenylene group, n is 5 to 20, and M is a hydrogen or salt; C.sub.n H.sub.2n+1 phO(CH.sub.2 CH.sub.2 O)mSO.sub.3 M wherein ph is a phenylene group, n is 5 to 20, m is 0 to 20, and M is a hydrogen or salt; and C.sub.n H.sub.2n+1 O(CH.sub.2 CH.sub.2 O)mSO.sub.3 M wherein n is 5 to 20, m is 0 to 20, and M is a hydrogen or salt, is dissolved in 0.1 to 1000 ppm into a 20 to 60 wt % of hydrogen fluoride (HF), and the remainder is water (100 wt % in total), and a method for preparing a low concentration of wafer treating solution by adding water, H.sub.2 O.sub.2, HNO.sub.3, CH.sub.3 COOH, NH.sub.4 F or the like, into the above solution. The present invention also provides a wafer treating solution in which at least one of surfactants represented by C.sub.n H.sub.2n+1 ph(SO.sub.3 M)Oph(SO.sub.3 M) wherein ph is a phenylene group, n is 5 to 20, and M is a hydrogen or salt; C.sub.n H.sub.2n+1 ph(CH.sub.2 CH.sub.2 O)mSO.sub.3 M wherein ph is a phenylene group, n is 5 to 20, m is 0 to 20, and M is a hydrogen or salt; and C.sub.n H.sub.2n+1 O(CH.sub.2 CH.sub.2 O)mSO.sub.3 M wherein n is 5 to 20, m is 0 to 20, and M is a hydrogen or salt, is dissolved in 0.01 to 1000 ppm in at least one of HF, H.sub.2 O.sub.2, HNO.sub.3, CH.sub.3 COOH, NH.sub.4 F, HCl, H.sub.3 PO.sub.4 and an ammonium hydroxide represented by a formula:[(R.sub.1)(R.sub.2)(R.sub.3)(R.sub.4)N].sup.+ OH.sup.-wherein R.sub.1, R.sub.2, R.sub.3 and R.sub.4 are an alkyl group of 1 to 6 carbon atoms which may have a hydroxyl group as a substitutent, and the remainder is water (100 wt % in total).

    摘要翻译： PCT No.PCT / JP96 / 03313。 371日期：1998年4月22日 102（e）1998年4月22日PCT PCT 1996年11月11日PCT公布。 第WO97 / 18582号公报 日期：1997年5月22日本发明提供一种晶片处理溶液，其中ph为亚苯基，n为5〜20，M为氢或盐的CnH2n + 1ph（SO3M）Oph（SO3M）中的至少一种; C n H 2n + 1phO（CH 2 CH 2 O）m SO 3 M，其中ph为亚苯基，n为5至20，m为0至20，M为氢或盐; 和C n H 2n + 10（CH 2 CH 2 O）m SO 3 M，其中n为5至20，m为0至20，M为氢或盐，溶解在20至60重量％的氟化氢（HF）中，为0.1至1000ppm， 其余为水（总计100重量％），以及通过向上述溶液中加入水，H 2 O 2，HNO 3，CH 3 COOH，NH 4 F等制备低浓度晶片处理溶液的方法。 本发明还提供一种晶片处理溶液，其中至少一种由CnH2n + 1ph（SO3M）Oph（SO3M）表示的表面活性剂，其中ph为亚苯基，n为5至20，M为氢或盐; C n H 2n + 1ph（CH 2 CH 2 O）m SO 3 M，其中ph为亚苯基，n为5至20，m为0至20，M为氢或盐; 和C n H 2n + 10（CH 2 CH 2 O）m SO 3 M，其中n为5至20，m为0至20，M为氢或盐，在HF，H 2 O 2，HNO 3，CH 3 COOH，NH 4 F中的至少一种中溶解于0.01至1000ppm ，HCl，H 3 PO 4和由式[R 1）（R 2）（R 3）（R 4）N] + OH表示的氢氧化铵，其中R 1，R 2，R 3和R 4是1至6个碳原子的烷基， 可以具有羟基作为取代基，其余为水（总共100重量％）。

    Method and tool for preventing sliding down of shoulder belt of shoulder bag, and shoulder bag
    3.
    发明授权
    Method and tool for preventing sliding down of shoulder belt of shoulder bag, and shoulder bag 有权

    公开(公告)号：US11596215B2

    公开(公告)日：2023-03-07

    申请号：US16969536

    申请日：2019-02-14

    申请人： Makoto Suyama

    发明人： Makoto Suyama

    IPC分类号： A45C13/30 ,  A45C3/02 ,  A45C3/14 ,  A45C3/12 ,  A45F3/02 ,  A45F3/14 ,  A45F3/12

    摘要： Disclosed are shoulder belt sliding-down preventing method, and a related preventing tool, shoulder belt, and bag. The belt-shaped neck hanging element is connected to a belt at positions separated from each other via connecting members. A loop-shaped space is thereby formed between the belt body and the neck-hanging element. The head passes through this space, and the neck hanging element contacts the side of the neck. In operation, the connecting member is removed and held with one hand, the belt body is hung on the shoulder, the connecting member is passed around the back of the neck, the neck hanging element is hung around the neck, and the connecting member is engaged again with the belt body. The belt body of the shoulder bag can hang on the shoulder and the neck hanging element can be wound around the neck, thereby preventing the belt body from sliding down the shoulder.

    Catheter
    5.
    发明申请
    Catheter 审中-公开

    公开(公告)号：US20070123911A1

    公开(公告)日：2007-05-31

    申请号：US11698375

    申请日：2007-01-26

    申请人： Makoto Suyama ,  Tsutomu Nakamura

    发明人： Makoto Suyama ,  Tsutomu Nakamura

    IPC分类号： A61F11/00

    CPC分类号： A61M25/0138 ,  A61M25/003 ,  A61M25/0045 ,  A61M25/0054 ,  A61M25/0147 ,  A61M2025/004 ,  A61M2025/018 ,  A61M2210/1071 ,  A61M2210/1075

    摘要： A catheter according to an aspect of the present invention comprises a flexible tubular insert section having, in the outer surface of the distal end side of the insert section, a plurality of notches arranged in the longitudinal direction of the insert section on one side of a plane passing through the longitudinal axis of the insert section, an operating wire passed through the insert section and capable of advancing or retreating to bend the distal end side of the insert section having the notches, and a reinforcing tube put on the insert section to cover substantially the overall length of the whole region of the insert section, except the distal end side of the insert section on which the notches are formed, and to restrain longitudinal compression of the insert section.

    PLASMA ETCHING METHOD
    6.
    发明申请
    PLASMA ETCHING METHOD 审中-公开
    等离子体蚀刻法

    公开(公告)号：US20130048599A1

    公开(公告)日：2013-02-28

    申请号：US13363506

    申请日：2012-02-01

    申请人： Makoto SATAKE ,  Makoto Suyama ,  Masato Ishimaru ,  Yasukiyo Morioka

    发明人： Makoto SATAKE ,  Makoto Suyama ,  Masato Ishimaru ,  Yasukiyo Morioka

    IPC分类号： H01F41/00 ,  B44C1/22

    CPC分类号： H01J37/32449 ,  H01J37/32862 ,  H01J2237/334 ,  H01L43/12

    摘要： The present invention provides a method for stably generating cleaning plasma regardless of a condition of CO-containing plasma. When a magnetic film formed on a wafer 802 to be etched is processed with the CO-containing plasma which is generated by applying a source electric power to a CO-containing gas containing elements of C and O, which has been introduced into a vacuum chamber 801, to convert the CO-containing gas into a plasma state, the method includes: applying predetermined processing to the magnetic film formed on the wafer 802 to be etched by using the CO-containing plasma; then introducing a cleaning gas into the vacuum chamber in a state of applying the source electric power 806 to the antenna; and then stopping the introduction of the CO-containing gas into the vacuum chamber to thereby generate the cleaning plasma with the use of a predetermined cleaning gas.

    摘要翻译： 本发明提供了一种用于稳定地产生清洁等离子体的方法，而不管含CO等离子体的条件如何。 当将待蚀刻的晶片802上形成的磁性膜用含CO等离子体进行处理时，其通过将源电力施加到含有C和O元素的含CO气体而产生，该含CO气体已被引入真空室 801，为了将含CO气体转换为等离子体状态，该方法包括：通过使用含CO等离子体对形成在待蚀刻的晶片802上的磁膜施加预定的处理; 然后在将源电力806施加到天线的状态下将清洁气体引入真空室中; 然后停止将含CO气体引入真空室中，从而通过使用预定的清洁气体产生清洗等离子体。

    Catheter
    9.
    发明授权
    Catheter 有权
    导管

    公开(公告)号：US07232434B2

    公开(公告)日：2007-06-19

    申请号：US10095824

    申请日：2002-03-14

    申请人： Makoto Suyama ,  Tsutomu Nakamura

    发明人： Makoto Suyama ,  Tsutomu Nakamura

    IPC分类号： A61M25/00

    CPC分类号： A61M25/0138 ,  A61M25/003 ,  A61M25/0045 ,  A61M25/0054 ,  A61M25/0147 ,  A61M2025/004 ,  A61M2025/018 ,  A61M2210/1071 ,  A61M2210/1075

    摘要： A catheter according to an aspect of the present invention comprises a flexible tubular insert section having, in the outer surface of the distal end side of the insert section, a plurality of notches arranged in the longitudinal direction of the insert section on one side of a plane passing through the longitudinal axis of the insert section, an operating wire passed through the insert section and capable of advancing or retreating to bend the distal end side of the insert section having the notches, and a reinforcing tube put on the insert section to cover substantially the overall length of the whole region of the insert section, except the distal end side of the insert section on which the notches are formed, and to restrain longitudinal compression of the insert section.

    摘要翻译： 根据本发明的一个方面的导管包括柔性管状插入部分，其在插入部分的远端侧的外表面中具有在插入部分的纵向方向上布置的多个凹口 平面穿过插入部分的纵向轴线，操作线穿过插入部分并且能够前进或后退以使具有凹口的插入部分的远端侧弯曲，并且将加强管放置在插入部分上以覆盖 基本上为插入部分的整个区域的整个长度，除了其上形成有切口的插入部分的远端侧，并且抑制插入部分的纵向压缩。

    Process for production of etching or cleaning fluids
    10.
    发明申请
    Process for production of etching or cleaning fluids 审中-公开
    蚀刻或清洗液生产工艺

    公开(公告)号：US20060178282A1

    公开(公告)日：2006-08-10

    申请号：US10549181

    申请日：2004-03-10

    申请人： Makoto Suyama ,  Takehiko Kezuka ,  Mitsushi Itano

    发明人： Makoto Suyama ,  Takehiko Kezuka ,  Mitsushi Itano

    IPC分类号： C11D7/32

    CPC分类号： C11D7/10 ,  C11D7/06 ,  C11D7/08 ,  C11D7/3209 ,  C11D11/0047 ,  H01L21/02052

    摘要： A method for producing an etching or cleaning solution comprising (1) at least one member selected from the group consisting of fluoride salts and bifluoride salts formed from at least one member selected from the group consisting of ammonia, hydroxylamines, aliphatic amines, aromatic amines, aliphatic quaternary ammoniums and aromatic quaternary ammoniums with hydrofluoric acid; (2) at least one heteroatom-containing organic solvent; and (3) water, the method comprising the steps of: Step 1: mixing an aqueous hydrofluoric acid solution with at least one heteroatom-containing organic solvent, and Step 2: mixing the mixture obtained in Step 1 with at least one member selected from the group consisting of ammonia, hydroxylamines, aliphatic amines, aromatic amines, aliphatic quaternary ammoniums, aromatic quaternary ammoniums, and fluorides thereof.

    摘要翻译： 一种蚀刻或清洗溶液的制造方法，其特征在于，含有（1）选自由氨，羟胺，脂肪族胺，芳香族胺等中的至少一种构成的氟化物盐和氟化氢中的至少1种以上的成分， 脂肪族季铵和芳族季铵与氢氟酸; （2）至少一个含杂原子的有机溶剂; 和（3）水，所述方法包括步骤1：将含氟氢酸水溶液与至少一种含杂原子的有机溶剂混合，步骤2：将步骤1中获得的混合物与至少一种选自 由氨，羟胺，脂族胺，芳族胺，脂族季铵，芳族季铵及其氟化物组成的组。