摘要:
A method of machining a cathode used in an electron gun. The method includes steps of placing an object to be machined, which is a material of the cathode, and a machining electrode in an electrically insulating oil; applying a discharge current to the machining electrode; and machining the object to be machined to have a shape corresponding to the shape of the machining electrode by means of electric discharge machining of the machining electrode. The machining electrode includes a disk, recesses formed on a front surface of the disk, a protrusion provided on a back surface of the disk, and a hole for mounting a lead wire for applying discharge current to the machining electrode. Bumps corresponding to the shape of the recesses of the machining electrode are formed on the object to be machined by means of the electric discharge machining.
摘要:
The present invention provides an electron beam apparatus for irradiating a sample with primary electron beams to detect secondary electron beams generated from a surface of the sample by the irradiation for evaluating the sample surface. In the electron beam apparatus, an electron gun has a cathode for emitting primary electron beams. The cathode includes a plurality of emitters for emitting primary electron beams, arranged apart from one another on a circle centered at an optical axis of a primary electro-optical system. The plurality of emitters are arranged such that when the plurality of emitters are projected onto a straight line parallel with a direction in which the primary electron beams are scanned, resulting points on the straight line are spaced at equal intervals.
摘要:
An electron beam system wherein a shot noise of an electron beam can be reduced and a beam current can be made higher, and further a shaped beam is formed by a two-stage lenses so as to allow for an operation with high stability. In this electron beam system, an electron beam emitted from an electron gun is irradiated onto a sample and secondary electrons emanated from the sample are detected. The electron gun is a thermionic emission type and designed to operate in a space charge limited condition. A shaping aperture and a NA aperture are arranged in front locations of the electron gun. An image of the shaping aperture formed by an electron beam emitted from the thermionic emission electron gun is focused onto a surface of the sample through the two-stage lenses.
摘要:
An electron beam apparatus having a longer life time of cathode, and allowing a plurality of electron beams to be arranged adequately around an optical axis and five or more electron beams to be formed from a single electron gun. The electron beams emitted from a cathode made of ZrO/W (tungsten zirconium oxide) or a cathode made of carbide of transition metal to the off-optical axis directions may be converged on a sample to scan it. The apparatus includes a plate for reducing a vacuum conductance defined between the electron gun chamber side and the sample side, and apertures are formed through the plate at locations offset from the optical axis allowing for the passage of the electron beams. In order to evaluate a pattern on the sample, the electron beam emitted from the electron gun is incident to the sample surface via an objective lens. The objective lens is composed of a flat electrode having an aperture centered on the optical axis and placed in parallel with the sample surface and an electromagnetic lens including a gap formed in a side facing to the sample. Further, in order to inspect a mask, spacing among a plurality of electron beams after having passed through the mask are extended by a magnifying lens and thus widely spaced electron beams are then converted into optical signal in a scintillator.
摘要:
An electron beam apparatus is provided for reliably measuring a potential contrast and the like at a high throughput in a simple structure. The electron beam apparatus for irradiating a sample, such as a wafer, formed with a pattern with an electron beam to evaluate the sample comprises an electron-optical column for accommodating an electron beam source, an objective lens, an E×B separator, and a secondary electron beam detector; a stage for holding the sample, and relatively moving the sample with respect to the electron-optical column; a working chamber for accommodating the stage and capable of controlling the interior thereof in a vacuum atmosphere; a loader for supplying a sample to the stage; a voltage applying mechanism for applying a voltage to the sample, and capable of applying at least two voltages to a lower electrode of the objective lens; and an alignment mechanism for measuring a direction in which dies are arranged on the sample. When the sample is evaluated, a direction in which the stage is moved is corrected to align with the direction in which the dies are arranged.
摘要:
An electron beam apparatus, in which an electron beam emitted from an electron gun having a cathode and an anode is focused and irradiated onto a sample, and secondary electrons emanated from the sample are directed into a detector, the apparatus further comprising means for optimizing irradiation of the electron beam emitted from the electron gun onto the sample, the optimizing means may be two-stage deflectors disposed in proximity to the electron gun which deflects and directs the electron beam emitted in a specific direction so as to be in alignment with the optical axis direction of the electron beam apparatus, the electron beam emitted in the specific direction being at a certain angle with respect to the optical axis due to the fact that, among the crystal orientations of said cathode, a specific crystal orientation allowing a higher level of electron beam emission out of alignment with the optical axis direction.
摘要:
An electron beam apparatus including an electron gun for directing a plurality of primary electron beams onto a sample, an objective lens for forming an electric filed to accelerate a plurality of secondary electron beams emitted from the sample, and a separator for separating the plurality of secondary electron beams from a primary optical system and for directing the plurality of secondary electron beams into a secondary optical system for guiding to a detector outputting a detection signal of the secondary electron beams. A deflector deflects the secondary electron beams in the secondary optical system. The deflector is controlled to deflect the plurality of secondary electron beams synchronously with scanning of the plurality of primary electron beams, thereby preventing the plurality of secondary electron beams from moving on the detector in response to the scanning of the plurality of primary electron beams.
摘要:
An electron beam apparatus is provided for reliably measuring a potential contrast and the like at a high throughput in a simple structure. The electron beam apparatus for irradiating a sample, such as a wafer, formed with a pattern with an electron beam to evaluate the sample comprises an electron-optical column for accommodating an electron beam source, an objective lens, an E×B separator, and a secondary electron beam detector; a stage for holding the sample, and relatively moving the sample with respect to the electron-optical column; a working chamber for accommodating the stage and capable of controlling the interior thereof in a vacuum atmosphere; a loader for supplying a sample to the stage; a voltage applying mechanism for applying a voltage to the sample, and capable of applying at least two voltages to a lower electrode of the objective lens; and an alignment mechanism for measuring a direction in which dies are arranged on the sample. When the sample is evaluated, a direction in which the stage is moved is corrected to align with the direction in which the dies are arranged.
摘要:
An electron beam apparatus is provided in which a sample is scanned with a plurality of primary electron beams respectively emitted from a plurality of electron guns. Each of the electron guns comprises a mechanism for adjusting a relative position between a cathode and anode. The adjusting mechanism of each of the electron guns comprises an insulator for supporting the cathode and a plurality of piezo elements for supporting the insulator. The piezo element varies its length in response to a voltage applied thereto. Therefore, the position of the cathode is adjustable relative to the anode position, by controlling voltages applied to the piezo elements.
摘要:
An electron beam apparatus including an electron gun for directing a plurality of primary electron beams onto a sample, an objective lens for forming an electric field to accelerate a plurality of secondary electron beams emitted from the sample, and a separator for separating the plurality of secondary electron beams from a primary optical system and for directing the plurality of secondary electron beams into a secondary optical system for guiding to a detector outputting a detection signal of the secondary electron beams. A deflector deflects the secondary electron beams in the secondary optical system. The deflector is controlled to deflect the plurality of secondary electron beams synchronously with scanning of the plurality of primary electron beams, thereby preventing the plurality of secondary electron beams from moving on the detector in response to the scanning of the plurality of primary electron beams.