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1.发明授权Tantalum adhesion layer and reactive-ion-etch process for providing a thin film metallization area 失效钽粘附层和用于提供薄膜金属化区域的反应离子蚀刻工艺
公开(公告)号：US5885750A
公开(公告)日：1999-03-23
申请号：US942777
申请日：1997-10-02
IPC分类号： G03F7/085 , H01L21/70 , H01L21/768 , G03F7/26
CPC分类号： G03F7/085 , H01L21/707 , H01L21/76885
摘要： A method for providing a thin film metallization area on a substrate is disclosed comprising the steps of: depositing a Ta adhesion layer on the surface of the substrate seed layer, conducting a photo resist process on the Ta adhesion layer to define the thin film metallization area, including a remnant removal process to remove remnant photo resist process material in the thin film metallization area to the Ta adhesion layer, the Ta adhesion layer preventing the remnant removal from reaching the seed layer, conducting a Ta removal reactive-ion-etch process to remove the Ta adhesion layer in the thin film metallization area, so that the seed layer is exposed in the metallization area. A metal material may then be deposited in the metallization area.
摘要翻译： 公开了一种在衬底上提供薄膜金属化区域的方法，包括以下步骤：在衬底晶种层的表面上沉积Ta粘附层，在Ta粘附层上进行光刻工艺以限定薄膜金属化区域 ，包括残留的去除工艺，以将薄膜金属化区域中残留的光致抗蚀剂处理材料去除到Ta粘附层，Ta粘附层防止残留物去除种子层，进行Ta去除反应离子蚀刻工艺 去除薄膜金属化区域中的Ta粘附层，使得种子层在金属化区域中暴露。 然后可以在金属化区域中沉积金属材料。
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公开(公告)号：US5665251A
公开(公告)日：1997-09-09
申请号：US344241
申请日：1994-11-23
IPC分类号： G11B5/31 , G11B5/39 , H01L21/768 , B44C1/22
CPC分类号： G11B5/3967 , G11B5/3116 , G11B5/3163 , H01L21/76885
摘要： A method is provided for constructing well defined plated miniature metallic structures. A seedlayer may be formed over an insulative layer such as a gap layer of a write head. A protective layer, such as alumina or silicon dioxide, is formed on top of the seedlayer to protect it from a subsequent reactive ion etching (RIE) step. A relatively thick layer of material, such as polymeric photoresist, is formed on top of the protective layer, the thick layer being of a type of material which can be patterned by reactive ion etching. By photolithography, an RIE mask, such as a thin layer of patterned metal, is formed on top of the relatively thick resist layer. The pattern of the mask corresponds to the desired shape of the metallic structure to be formed by plating. After masking the relatively thick layer the relatively thick layer is anisotropically etched by RIE. After the thick layer is RIE'd the protective layer on top of the seedlayer portion to be plated is removed by an etchant such as an aqueous alkaline etchant containing EDTA. It is important that the polymeric photoresist not be attacked by this etchant since it would undercut the high definition required for the metallic structure. After the protective layer portion is removed electrodeposition takes place to plate the desired metallic structure on the seedlayer portion. After plating the remaining relatively thick layer can be removed by reactive ion etching and the remaining protective layer can be removed by the aforementioned etchant containing EDTA to leave the desired freestanding metallic structure with miniature high resolution features.
摘要翻译： 提供了一种用于构造良好定义的电镀微型金属结构的方法。 可以在诸如写入头的间隙层的绝缘层上形成种子层。 在种子层的顶部上形成保护层，例如氧化铝或二氧化硅，以保护其免于随后的反应离子蚀刻（RIE）步骤。 在保护层的顶部上形成相对厚的材料层，例如聚合物光致抗蚀剂，厚层是可以通过反应离子蚀刻图案化的材料类型。 通过光刻法，在相对较厚的抗蚀剂层的顶部上形成诸如图案化金属的薄层的RIE掩模。 掩模的图案对应于通过电镀形成的金属结构的期望形状。 在掩蔽相对较厚的层之后，通过RIE各向异性蚀刻相对较厚的层。 在厚层被RIE'之后，待镀覆的种子层部分顶部的保护层通过诸如含有EDTA的含水碱性蚀刻剂的蚀刻剂除去。 重要的是，聚合物光致抗蚀剂不会被该蚀刻剂侵蚀，因为它会削弱金属结构所需的高清晰度。 在去除保护层部分之后，进行电沉积以在籽晶层部分上铺板所需的金属结构。 电镀后，可以通过反应离子蚀刻除去剩余的相对较厚的层，并且可以通过上述含有EDTA的蚀刻剂除去剩余的保护层，以留下具有微小高分辨率特征的所需独立金属结构。
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3.发明授权Thin film inductive write head with minimal organic insulation material and method for its manufacture 失效薄膜感应写头，具有最小的有机绝缘材料及其制造方法
公开(公告)号：US6074566A
公开(公告)日：2000-06-13
申请号：US933194
申请日：1997-09-16
CPC分类号： G11B5/3163 , G11B5/3106 , G11B5/3133 , Y10T29/49052
摘要： A thin film inductive write head has minimal organic insulation material in contact with the encapsulating overcoat. The process for its fabrication includes a reactive ion etching (RIE) process to remove the organic insulative material while still allowing the head top pole piece to be planar. The organic insulation material is removed by RIE down to the head gap layer in the region between the ABS and the coil. The etching is done with the top or second pole piece acting as a mask so that the planarized organic insulation material is still maintained over the portion of the coil that is located between the two pole pieces. Thus the organic insulation material is still present in this region as the planarization layer onto which the ferromagnetic layer for the second pole piece was deposited. This allows the encapsulating overcoat to be deposited directly on the gap layer, which is formed of the same material as the overcoat, rather than on the organic insulation material, in a substantial portion of the write head structure. In a further embodiment the write head also has the organic insulation material removed down to the gap layer between the coil turns in the portion of the coil that does not lie beneath the second pole piece. The region between the coil turns in this portion of the coil is filled with overcoat material during the head encapsulation process.
摘要翻译： 薄膜感应写头具有与封装外涂层接触的最小有机绝缘材料。 其制造方法包括反应离子蚀刻（RIE）工艺以去除有机绝缘材料，同时仍允许顶部顶部极片为平面的。 有机绝缘材料通过RIE在ABS和线圈之间的区域中被去除到头部间隙层。 用顶部或第二极靴作为掩模进行蚀刻，使得平面化的有机绝缘材料仍然保持在位于两个极片之间的线圈的部分上。 因此，有机绝缘材料在该区域中仍然存在于其上沉积有第二极片的铁磁层的平坦化层。 这允许封装外涂层直接沉积在与外涂层相同的材料形成的间隙层上，而不是在写头结构的实质部分中而不是在有机绝缘材料上沉积。 在进一步的实施例中，写入头还具有向下移动到不在第二极片下方的线圈部分的线圈之间的间隙层的有机绝缘材料。 在头部封装工艺期间，该线圈的该部分中的线圈匝之间的区域被外涂层材料填充。
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公开(公告)号：US07123443B2
公开(公告)日：2006-10-17
申请号：US10617322
申请日：2003-07-09
IPC分类号： G11B5/17
CPC分类号： C25D5/022 , G11B5/127 , G11B5/3163 , Y10T29/49032 , Y10T29/49155 , Y10T29/49156
摘要： The present invention includes an overplated component which includes an enlarged mushroom head having outer portions which overhang a hard baked resist layer. The device is ultimately encapsulated such that no voids and/or redeposition problems exist under the overhang due to the presence of the hard baked resist. While not intended to be limiting in any manner, a device of the present invention is a thin film magnetic head wherein the yoke portion of a magnetic pole is formed utilizing the mushroom plating techniques of the present invention. Another mushroom plated component found in many devices is a mushroom plated electrical interconnecting stud that is formed utilizing the process steps of the present invention.
摘要翻译： 本发明包括一个外延部件，它包括一个扩大的蘑菇头部，其具有伸出硬烘烤抗蚀剂层的外部部分。 该装置最终被包封，使得由于硬烘烤抗蚀剂的存在而在悬垂下不存在空隙和/或再沉积问题。 虽然不是以任何方式限制，但是本发明的装置是薄膜磁头，其中利用本发明的蘑菇电镀技术形成磁极的磁轭部分。 在许多装置中发现的另一种蘑菇电镀组件是利用本发明的方法步骤形成的蘑菇电镀电互连柱。
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公开(公告)号：US06631546B1
公开(公告)日：2003-10-14
申请号：US09496070
申请日：2000-02-01
IPC分类号： G11R5127
CPC分类号： C25D5/022 , G11B5/127 , G11B5/3163 , Y10T29/49032 , Y10T29/49155 , Y10T29/49156
摘要： A method of manufacturing includes 2 mushroom plating process starts with an overplated component which includes an enlarged mushroom head having outer portions which overhang a resist layer. The next step in the first process embodiment is a heating step in which the resist layer is hard baked. Thereafter, using a dry etch process, such as a reactive ion etch (RIE) process, the hard baked resist layer is removed in all areas except beneath the overhang of the mushroom head. The area beneath the overhang thereby remains filled with hard baked resist. Thereafter, the device is ultimately encapsulated such that no voids and/or redeposition problems exist under the overhang due to the presence of the hard baked resist. In an alternative process embodiment of the present invention the dry etch process is conducted first upon the resist layer, such that the resist layer is removed in all areas except under the overhang. Thereafter, the device is baked, such that hard baked resist remains beneath the overhang. Ultimately, the device is encapsulated and no voids or redeposition problems exist beneath the overhang due to the presence of the hard baked resist.
摘要翻译： 一种制造方法包括2个蘑菇电镀工艺，其中包括一个具有外伸部分的扩大的蘑菇头的一个过度的部件，其上覆盖了一个抗蚀剂层。 第一工艺实施例中的下一步骤是其中抗蚀剂层被硬烘烤的加热步骤。 此后，使用诸如反应离子蚀刻（RIE）工艺的干蚀刻工艺，除了在蘑菇头的突出部以外的所有区域中除去硬烘烤抗蚀剂层。 悬挂下方的区域由此保持充满硬烘烤抗蚀剂。 此后，装置最终被封装，使得由于存在硬烘烤抗蚀剂而在悬垂下不存在空隙和/或再沉积问题。 在本发明的替代方法实施方案中，首先在抗蚀剂层上进行干蚀刻工艺，使得除了在悬垂体之外的所有区域中除去抗蚀剂层。 此后，该装置被烘烤，使得硬烘烤抗蚀剂保留在悬垂物的下方。 最终，器件被封装，由于存在硬烘烤的抗蚀剂，悬臂下方不存在空隙或再沉积问题。
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6.发明授权Use of thin carbon films as a bottom anti-reflective coating in manufacturing magnetic heads 失效在制造磁头时使用薄碳膜作为底部抗反射涂层公开(公告)号：US06346183B1
公开(公告)日：2002-02-12
申请号：US09632501
申请日：2000-08-03
申请人： Amanda Baer , Richard Hsiao , Cherngye Hwang , Clinton David Snyder , Hong Xu
发明人： Amanda Baer , Richard Hsiao , Cherngye Hwang , Clinton David Snyder , Hong Xu
IPC分类号： C25C1434
CPC分类号： G11B5/3163 , G03F7/091 , G11B5/3133 , G11B5/3166
摘要： A fabrication method using a bottom anti-reflective coating (BARC) eliminating deleterious effects of unwanted reflected light during the photo exposure step of a photolithographic process. The BARC coating comprises a carbon coating having a thickness of 300 angstroms, deposited by a carbon ion beam deposition tool, and an initial silicon BARC coating layer having thickness of 20 angstroms deposited before the carbon coating. Where the BARC layer is utilized in a photolithographic NiFe pole tip fabrication process, a NiFe seed layer is first deposited upon a substrate. The BARC layer is then formed on the NiFe seed layer and the pole tip trench is then photolithographically created. Thereafter, the BARC layer is removed from the bottom of the trench, utilizing a reactive ion etch process, exposing the NiFe seed layer. The NiFe pole tip is then fabricated into the trench, and any remaining photoresist and BARC layer are removed.
摘要翻译： 使用底部抗反射涂层（BARC）的制造方法，其消除光刻工艺的光曝光步骤期间不期望的反射光的有害影响。 BARC涂层包括通过碳离子束沉积工具沉积的具有300埃厚度的碳涂层，以及在碳涂覆之前淀积厚度为20埃的初始硅BARC涂层。 在光刻NiFe极尖制造工艺中使用BARC层的情况下，首先将NiFe种子层沉积在衬底上。 然后在NiFe种子层上形成BARC层，然后光刻形成极尖沟槽。 此后，利用反应离子蚀刻工艺将BARC层从沟槽的底部移除，暴露出NiFe种子层。 然后将NiFe极尖制成沟槽，并且去除任何剩余的光致抗蚀剂和BARC层。
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7.发明授权Isotropic deposition for trench narrowing of features to be created by reactive ion etch processing 失效通过反应离子蚀刻处理产生的特征的沟槽变窄的各向同性沉积公开(公告)号：US06770209B2
公开(公告)日：2004-08-03
申请号：US10043373
申请日：2002-01-09
IPC分类号： B44C122
CPC分类号： G11B5/3116 , G11B5/3163 , Y10T29/49032
摘要： An isotropic deposition method for trench narrowing of thin film magnetic write head features to be created by reactive ion etching. According to the method, a photolithographically defined photoresist trench is formed over a hardmask and underlying polymer layer as part of tri-layer resist process. Instead of performing the usual hardmask and polymer etching steps using the photoresist mask pattern, a spacer layer is deposited isotropically or directionally at an angle to cover the vertical side walls of the trench. The spacer layer is etchable by the hardmask etch process but resistant to the polymer etch process. When the hardmask etch process is performed, the spacer layer material applied to the trench side walls remains intact, thereby defining a narrowed trench that is extended by the subsequent base layer etch process.
摘要翻译： 用于通过反应离子蚀刻产生的薄膜磁性写入头特征的沟槽变窄的各向同性沉积方法。 根据该方法，作为三层抗蚀剂工艺的一部分，在硬掩模和下面的聚合物层上形成光刻定义的光致抗蚀剂沟槽。 代替使用光致抗蚀剂掩模图案进行通常的硬掩模和聚合物蚀刻步骤，间隔层以一定角度各向同性地或定向地沉积以覆盖沟槽的垂直侧壁。 间隔层可通过硬掩模蚀刻工艺蚀刻，但耐聚合物蚀刻工艺。 当执行硬掩模蚀刻工艺时，施加到沟槽侧壁的间隔层材料保持完整，从而限定通过随后的基底层蚀刻工艺延伸的变窄的沟槽。
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8.发明授权公开(公告)号：US06972928B2
公开(公告)日：2005-12-06
申请号：US10898799
申请日：2004-07-26
CPC分类号： G11B5/3116 , G11B5/3163 , Y10T29/49032
摘要： An isotropic deposition method for trench narrowing of thin film magnetic write head features to be created by reactive ion etching. According to the method, a photolithographically defined photoresist trench is formed over a hardmask and underlying polymer layer as part of tri-layer resist process. Instead of performing the usual hardmask and polymer etching steps using the photoresist mask pattern, a spacer layer is deposited isotropically or directionally at an angle to cover the vertical side walls of the trench. The spacer layer is etchable by the hardmask etch process but resistant to the polymer etch process. When the hardmask etch process is performed, the spacer layer material applied to the trench side walls remains intact, thereby defining a narrowed trench that is extended by the subsequent base layer etch process.
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公开(公告)号：US5734519A
公开(公告)日：1998-03-31
申请号：US37064
申请日：1993-03-25
申请人： Robert Edward Fontana, Jr. , Cherngye Hwang , Vlad Joseph Novotny , Timothy Clark Reiley , Celia Elizabeth Yeack-Scranton , Clinton David Snyder
发明人： Robert Edward Fontana, Jr. , Cherngye Hwang , Vlad Joseph Novotny , Timothy Clark Reiley , Celia Elizabeth Yeack-Scranton , Clinton David Snyder
摘要： A contact recording disk file uses an integrated head-suspension assembly having a head carrier with a dual-layer wear pad for contacting the disk during read and write operations. The outer wear layer of the pad is relatively soft and wear prone compared to a harder and more wear-resistant inner layer. The outer wear layer wears away at a relatively rapid rate during initial wear-in of the head carrier. In this manner the head pole pieces, which extend into the wear pad, are rapidly put into contact with the disk, thereby compensating for initial misalignment of the wear pad with the surface of the disk. The inner wear layer then provides wear resistance over the life of the disk file. In the preferred embodiment, both the outer and inner wear layers are formed of essentially amorphous carbon doped with different amounts of hydrogen.
摘要翻译： 接触式记录磁盘文件使用集成的头悬挂组件，其具有带有双层磨损垫的头部托架，用于在读取和写入操作期间接触盘。 相对于较硬和更耐磨的内层，该垫的外部耐磨层相对较软并且容易发生倾向。 在头托架的初始磨损期间，外磨损层以相对较快的速度磨损。 以这种方式，延伸到耐磨垫中的头部极片迅速地与盘接触，从而补偿磨损垫与盘表面的初始不对准。 然后，内部磨损层在磁盘文件的使用寿命内提供耐磨性。 在优选实施例中，外耐磨层和内耐磨层均由掺杂有不同量氢的基本无定形碳形成。
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10.发明申请公开(公告)号：US20080124942A1
公开(公告)日：2008-05-29
申请号：US12019403
申请日：2008-01-24
CPC分类号： B82Y25/00 , B82Y10/00 , G03F7/091 , G11B5/3116 , G11B5/3163 , G11B5/3903 , G11B2005/3996 , H01L21/0276 , H01L21/0332
摘要： A bi-layer anti-reflective coating for use in photolithographic applications, and specifically, for use in ultraviolet photolithographic processes. The bi-layered anti-reflective coating is used to minimize pattern distortion due to reflections from neighboring features in the construction of microcircuits. The bi-layer anti-reflection coating features a first layer, an absorption layer, disposed on a second layer, a dielectric layer, which is then disposed between a substrate and a photoresist layer. The dielectric/absorption layer comprises one combination selected from Ta/Al2O3, Ta/SiO2, Ta/TiO2, Ta/Ta2O5, Ta/Cr2O3, Ta/Si3N4, Ti/Al2O3, Ti/SiO2, Ti/TiO2, Ti/Ta2O5, Ti/Cr2O3, Ti/Si3N4, Cr/Al2O3, Cr/SiO2, Cr/TiO2, Cr/Ta2O5, Cr/Cr2O3, Cr/Si3N4, Al/Al2O3, Al/TiO2, Al/Ta2O5, Al/Cr2O3, Al/Si3N4, Ni/Al2O3, Ni/SiO2, Ni/TiO2, Ni/Ta2O5, Ni/Cr2O3, Ni/Si3N4, Ir/Al2O3, Ir/SiO2, Ir/TiO2, Ir/Ta2O5, Ir/Cr2O3, and Ir/Si3N4. At least the absorption and dielectric layers can be formed using vacuum deposition. A unique character of the bi-layer anti-reflective coatings is that it allows a thinner anti-reflection layer that has a wider process latitude.
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