摘要:
Provided is a pattern inspection apparatus including: a charge formation means which forms charge on a surface of a substrate (7) by generating an electron beam from a second electron source (20) which is different from an electron source (I) which generates an electron beam before irradiating an electron beam (3), a current measuring means (34) which measures a value of current flowing in the substrate while the charge is formed on the surface of the substrate by the charge formation means; and an adjustment means (37) which adjusts the charge formed by the charge formation means so that the value of the current measured by the current measuring means is a predetermined target value. Provided is also a pattern inspection method which uses the pattern inspection apparatus. Thus, it is possible to easily set an optimal condition of precharge executed before inspection of a pattern formed by a semiconductor apparatus manufacturing process and automatically inspection whether the precharge is good. Then, the inspection result is fed back to the operation afterward. This prevents lowering of the reliability of the inspection result and always enables a stable inspection.
摘要:
Provided is a pattern inspection apparatus including: a charge formation means which forms charge on a surface of a substrate (7) by generating an electron beam from a second electron source (20) which is different from an electron source (1) which generates an electron beam before irradiating an electron beam (3), a current measuring means (34) which measures a value of current flowing in the substrate while the charge is formed on the surface of the substrate by the charge formation means; and an adjustment means (37) which adjusts the charge formed by the charge formation means so that the value of the current measured by the current measuring means is a predetermined target value. Provided is also a pattern inspection method which uses the pattern inspection apparatus. Thus, it is possible to easily set an optimal condition of precharge executed before inspection of a pattern formed by a semiconductor apparatus manufacturing process and automatically inspection whether the precharge is good. Then, the inspection result is fed back to the operation afterward. This prevents lowering of the reliability of the inspection result and always enables a stable inspection.
摘要:
The present invention provides an appearance inspection apparatus that allows a user to give precedence to either defect detection performance or throughput. The appearance inspection apparatus allows a user to select the frequency of a digital image signal or the ratio of the frequency of the digital image signal to a sampling rate. Further, a user is allowed to select either throughput improvement or S/N improvement to prioritize.
摘要:
An inspection system uses a scanning electron microscope that detects a high-precision electron beam image, and at the same time removes restrictions for a low sampling rate. A sampled signal is obtained by sampling an analog brightness signal generated by a secondary electron detector at a predetermined sampling rate, and contiguous digital values contained in the sampled signal are added on an N by N digital value basis to generate a digital brightness signal whose frequency is equal to 1/N of the sampling frequency. Each, digital value contained in the digital brightness signal is divided by N to generate a digital signal made of digital values having a number of bits equal to that of the sampled signal and to generate an image signal in which each digital value of the digital signal forms one pixel data.
摘要:
The present invention provides an appearance inspection apparatus that allows a user to give precedence to either defect detection performance or throughput. The appearance inspection apparatus allows a user to select the frequency of a digital image signal or the ratio of the frequency of the digital image signal to a sampling rate. Further, a user is allowed to select either throughput improvement or S/N improvement to prioritize.
摘要:
A charged-particle microscope device and a method of controlling charged-particle beams are provided, which are capable of signal detection at the time when the charged state of an observation sample or a defect portion becomes optimum. Charge accumulation-waiting time T from an initial irradiation with an electron beam 21 for enhancing charge accumulation on an observation sample 100 until a next irradiation with the electron beam 21 for sample observation is set depending on the state of the observation sample 100 or a defect portion 112 generated on the observation sample 100. The irradiation with the electron beam 21 for enhancing charge accumulation and the irradiation with the electron beam 21 for sample observation are performed on the observation sample 100 on the basis of the charge accumulation-waiting time T.
摘要:
An object of the present invention is to provide an inspection system using a scanning electron microscope that detects a high-precision electron beam image and at the same time, removes restrictions for a low sampling rate, which presents a problem at this point, of an AD converter element and an inspection method.To achieve the object, an embodiment of the present invention is constructed so that a sampled signal is obtained by sampling an analog brightness signal generated by a secondary electron detector at a predetermined sampling rate, contiguous digital values contained in the sampled signal are added on a N by N digital value basis to generate a digital brightness signal whose frequency is equal to 1/N of the sampling frequency, and each digital value contained in the digital brightness signal is divided by N to generate a digital signal made of digital values having a number of bits equal to that of the sampled signal and to generate an image signal in which each digital value of the digital signal forms one pixel data.
摘要:
A disclosed method for observing the structure and characteristics of a specimen by an electron microscope realizes high-density charge accumulation on a specimen and improves the quality of voltage contrast images. For structural observation of a specimen and evaluation of its electrical characteristic using an electron beam, charging the specimen is performed. In this charging process, high-density charge accumulation on the specimen is achieved by irradiating the specimen with an electron beam set to have injection energy that falls within an injection energy band for which high charging efficiency is attained during electron beam irradiation and changing irradiation energy, while maintaining the injection energy.
摘要:
A charged particle beam device capable of observing a sample in an air atmosphere or gas atmosphere has a thin film for separating the atmospheric pressure space from the decompressed space. A vacuum evacuation pump evacuates a first housing; and a detector detects a charged particle beam (obtained by irradiation of the sample) in the first housing. A thin film is provided to separate the inside of the first housing and the inside of a second housing at least along part of the interface between the first and second housings. An opening part is formed in the thin film so that its opening area on a charged particle irradiation unit's side is larger than its opening area on the sample side; and the thin film which covers the sample side of the opening part transmits or allows through the primary charged particle beam and the charged particle beam.
摘要:
A charged particle beam device capable of observing a sample in an air atmosphere or gas atmosphere has a thin film for separating the atmospheric pressure space from the decompressed space. A vacuum evacuation pump evacuates a first housing; and a detector detects a charged particle beam (obtained by irradiation of the sample) in the first housing. A thin film is provided to separate the inside of the first housing and the inside of a second housing at least along part of the interface between the first and second housings. An opening part is formed in the thin film so that its opening area on a charged particle irradiation unit's side is larger than its opening area on the sample side; and the thin film which covers the sample side of the opening part transmits or allows through the primary charged particle beam and the charged particle beam.