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公开(公告)号：US07765676B2
公开(公告)日：2010-08-03
申请号：US10993499
申请日：2004-11-18
CPC分类号： G11B5/3903 , Y10T29/49032 , Y10T29/49041 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A method for constructing a magnetoresistive sensor using an etch mask that is resistant to the material removal process used to define the sensor width and stripe height. The method may include the use of a Ta etch mask formed under a photoresist mask, and the use of an ion milling process to define the sensor. The etch mask remains substantially intact after performing the ion milling and therefore is readily removed by a later CMP process. The etch mask layer is also very resistant to high temperatures such as those used in a desired atomic layer deposition of alumina, which is used to deposit conformal layers of alumina around the sensor.
摘要翻译： 一种用于构造使用耐蚀刻材料去除工艺的蚀刻掩模的磁阻传感器的方法，所述方法用于限定传感器宽度和条纹高度。 该方法可以包括使用形成在光致抗蚀剂掩模下的Ta蚀刻掩模，以及使用离子铣削工艺来限定传感器。 在执行离子研磨之后，蚀刻掩模基本上保持完整，因此通过稍后的CMP工艺容易地除去。 蚀刻掩模层也非常耐高温，例如用于期望的氧化铝原子层沉积中使用的那些，其用于在传感器周围沉积保形层的氧化铝。
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公开(公告)号：US07574791B2
公开(公告)日：2009-08-18
申请号：US11126508
申请日：2005-05-10
申请人： Satoru Araki , Robert Stanley Beach , Marie-Claire Cyrille , Wipul Pemsiri Jayasekara , Quang Le , Jui-Lung Li , David John Seagle , Howard Gordon Zolla
发明人： Satoru Araki , Robert Stanley Beach , Marie-Claire Cyrille , Wipul Pemsiri Jayasekara , Quang Le , Jui-Lung Li , David John Seagle , Howard Gordon Zolla
IPC分类号： G11B5/187
CPC分类号： G11B5/3909 , B82Y10/00 , G11B5/112 , G11B5/3169 , G11B5/3906 , Y10T29/49041 , Y10T29/49044 , Y10T29/49046
摘要： A method for fabricating magnetic side shields for an MR sensor of a magnetic head. Following the deposition of MR sensor layers, a first DLC layer is deposited. Milling mask layers are then deposited, and outer portions of the milling mask layers are removed such that a remaining central portion of the milling mask layers is formed having straight sidewalls and no undercuts. Outer portions of the sensor layers are then removed such that a relatively thick remaining central portion of the milling mask resides above the remaining sensor layers. A thin electrical insulation layer is deposited, followed by the deposition of magnetic side shields. A second DLC layer is deposited and the remaining mask layers are then removed utilizing a chemical mechanical polishing (CMP) liftoff step. Thereafter, the first DLC layer and the second DLC layer are removed and a second magnetic shield layer is then fabricated thereabove.
摘要翻译： 一种用于制造用于磁头的MR传感器的磁性侧屏蔽的方法。 在MR传感器层的沉积之后，沉积第一DLC层。 然后沉积铣削掩模层，并且去除铣削掩模层的外部，使得铣削掩模层的剩余中心部分形成为具有直的侧壁并且没有底切。 然后去除传感器层的外部部分，使得铣削掩模的相对较厚的剩余中心部分位于剩余传感器层的上方。 沉积薄的电绝缘层，随后沉积磁性侧屏蔽层。 沉积第二DLC层，然后利用化学机械抛光（CMP）剥离步骤除去剩余的掩模层。 此后，去除第一DLC层和第二DLC层，然后在其上制造第二磁屏蔽层。
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3.发明授权Method of partial depth material removal for fabrication of CPP read sensor 失效用于制造CPP读取传感器的部分深度材料去除方法公开(公告)号：US07419610B2
公开(公告)日：2008-09-02
申请号：US11197957
申请日：2005-08-05
IPC分类号： B44C1/22
CPC分类号： H01F41/308 , B82Y25/00 , B82Y40/00 , G11B5/3163 , G11B5/3903 , H01F10/3268 , Y10T29/49032 , Y10T29/49044
摘要： A method for fabricating a read head sensor for a magnetic disk drive is presented. The method includes providing a layered wafer stack to be shaped, where the layered wafer stack includes a free layer, a barrier layer and a pinned layer. A single- or multi-layered photoresist mask is formed upon the layered wafer stack to be shaped. A material removal source is provided and used to perform a partial depth material removal within a partial depth material removal range which extends from the free layer to within the pinned layer to a partial depth material removal endpoint. In various embodiments, this depth endpoint lies at or within the barrier layer or within but not through the pinned layer.
摘要翻译： 提出了一种用于制造用于磁盘驱动器的读取头传感器的方法。 该方法包括提供待成形的层状晶片叠层，其中层状晶片堆叠包括自由层，阻挡层和钉扎层。 单层或多层光刻胶掩模形成在待成形的层状晶片叠层上。 提供材料去除源并用于在部分深度材料去除范围内执行部分深度材料去除，该部分深度材料去除范围从自由层延伸到钉扎层内至部分深度材料去除端点。 在各种实施例中，该深度端点位于或在阻挡层内或内部但不穿过被钉扎层。
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4.发明申请READ HEAD HAVING SHAPED READ SENSOR-BIASING LAYER JUNCTIONS USING PARTIAL MILLING 审中-公开阅读头部使用部分铣削读取传感器 - 偏移层结公开(公告)号：US20080158736A1
公开(公告)日：2008-07-03
申请号：US12044999
申请日：2008-03-09
IPC分类号： G11B5/33
CPC分类号： G11B5/3932 , G11B5/3903 , G11B5/398 , Y10T29/49039 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A read head and a magnetic hard disk drive having a read head layer stack which has been partially milled to within a partial milling range to form a shaped junction and a hard bias layer which is in contact with the shaped junction of the wafer stack.
摘要翻译： 具有读头单元堆叠的读头和磁盘驱动器，其已经被部分铣削到部分铣削范围内，以形成与晶片叠层的成形结接触的成形结和硬偏置层。
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5.发明授权Method of fabricating a read head having shaped read sensor-biasing layer junctions using partial milling 失效使用部分铣削制造具有成形的读取传感器偏置层结的读取头的方法公开(公告)号：US07367110B2
公开(公告)日：2008-05-06
申请号：US10952427
申请日：2004-09-27
IPC分类号： G11B5/187
CPC分类号： G11B5/3932 , G11B5/3903 , G11B5/398 , Y10T29/49039 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A method for fabricating a read head for a magnetic disk drive having a read head sensor and a hard bias layer, where the read head has a shaped junction between the read head sensor and the hard bias layer. The method includes providing a layered wafer stack to be shaped. A single- or multi-layered photoresist mask having no undercut is deposited upon the layered wafer stack to be shaped. The layered wafer stack is shaped by the output of a milling source, where the shaping includes partial milling to within a partial milling range to form a shaped junction. A hard bias layer is then deposited which is in contact with the shaped junction of the wafer stack.
摘要翻译： 一种用于制造具有读取头传感器和硬偏置层的磁盘驱动器的读取头的方法，其中读取头在读取头传感器和硬偏置层之间具有形状的结。 该方法包括提供待成形的分层晶片叠层。 没有底切的单层或多层光致抗蚀剂掩模沉积在待成形的分层晶片叠层上。 分层晶片堆叠通过铣削源的输出成形，其中成形包括部分铣削以在部分铣削范围内以形成成形接合部。 然后沉积与晶片叠层的成形结接触的硬偏压层。
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6.发明授权Dual angle milling for current perpendicular to plane (CPP) magnetoresistive sensor definition 失效用于垂直于平面（CPP）磁阻传感器定义的电流的双角铣削公开(公告)号：US07329362B2
公开(公告)日：2008-02-12
申请号：US11200757
申请日：2005-08-09
IPC分类号： B44C1/22
CPC分类号： B82Y10/00 , B82Y25/00 , G01R33/09 , G11B5/3163 , G11B5/3903 , G11B5/3909 , G11B2005/3996 , H01J2237/3114 , H01L43/08 , H01L43/12 , Y10T29/49046
摘要： A method for constructing a magnetoresistive sensor which eliminates all redeposited material (redep) from the sides of the sensor. The method involves forming a mask over a plurality of sensor layers, and then performing an ion mill at an angle that is nearly normal to the surface of the sensor layers. A second (glancing) ion mill is then performed at a larger angle with respect to the normal. The first ion mill may be 0-30 degrees with respect to normal, whereas the second ion mill can be 50-89 degrees with respect to normal. The first ion mill is performed with a larger bias voltage than the second ion mill. The higher bias voltage of the first ion mill provides a well collimated ion beam to form straight vertical side walls. The lower bias voltage of the second ion mill prevent damage to the sensor layers during the removal of redep from the sides of the sensor.
摘要翻译： 一种用于构造磁阻传感器的方法，其从传感器的侧面消除所有再沉积的材料（重新进行）。 该方法包括在多个传感器层上形成掩模，然后以与传感器层的表面几乎垂直的角度执行离子磨。 然后相对于法线以较大的角度执行第二（扫视）离子磨。 第一离子磨可相对于正常为0-30度，而第二离子磨可相对于正常为50-89度。 第一离子磨机以比第二离子磨机更大的偏压进行。 第一离子磨的较高的偏置电压提供了准直的离子束以形成直立的垂直侧壁。 第二离子磨的偏置电压较低可以防止传感器层从传感器的侧面移除重新进行检测。
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7.发明授权Double mill process for patterning current perpendicular to plane (CPP) magnetoresistive devices to minimize barrier shorting and barrier damage 失效用于图形化垂直于平面（CPP）磁阻器件的电流的双轧机工艺，以最小化障碍物短路和屏障损坏公开(公告)号：US07639456B2
公开(公告)日：2009-12-29
申请号：US11246720
申请日：2005-10-06
IPC分类号： G11B5/39
CPC分类号： G11B5/398 , B82Y25/00 , G01R33/093 , G11B5/3163 , G11B5/3906
摘要： A current perpendicular to plane (CPP) sensor and method of manufacturing such a sensor that prevents current shunting at the sides of the barrier/spacer layer due to redeposited material. A first ion mill is performed to remove at least the free layer. A quick glancing ion mill can be performed to remove the small amount of redep that may have accumulated on the sides of the free layer and barrier/spacer layer. Then an insulation layer is deposited to protect the sides of the free layer/barrier layer during subsequent manufacturing which can include further ion milling to define the rest of the sensor and another glancing ion mill to remove the redep formed by the further ion milling. This results in a sensor having no current shunting at the sides of the sensor and having no damage to the sensor layers.
摘要翻译： 垂直于平面（CPP）传感器的电流和制造这种传感器的方法，其防止由于再沉积材料在阻挡层/间隔层的侧面的电流分流。 执行第一离子研磨以去除至少自由层。 可以进行快速扫查离子磨，以除去可能积聚在自由层和阻挡层/间隔层的侧面上的少量重排物。 然后沉积绝缘层以在随后的制造期间保护自由层/阻挡层的侧面，其可以包括进一步的离子铣削以限定传感器的其余部分和另一个扫掠离子磨机以移除由进一步的离子铣削形成的重复。 这导致传感器在传感器的侧面没有电流分流并且不会损坏传感器层。
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8.发明申请METHOD FOR MANUFACTURING A TUNNEL JUNCTION MAGNETORESISTIVE SENSOR WITH IMPROVED PERFORMANCE AND HAVING A CoFeB FREE LAYER 有权用于制造具有改进性能并具有CoFeB自由层的隧道结型磁传感器的方法公开(公告)号：US20090246890A1
公开(公告)日：2009-10-01
申请号：US12060006
申请日：2008-03-31
IPC分类号： H01L21/00
CPC分类号： H01L43/12 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/098 , G11B5/3906 , G11B2005/3996 , H01F10/3254 , H01F10/3272 , H01F41/303
摘要： A method for manufacturing a magnetoresistive sensor that provides increased magnetoresistive performance. The method includes forming a series of sensor layers with at least one layer containing CoFeB, and having a first capping layer thereover. A high temperature annealing is performed to optimize the grains structure of the sensor layers. The first capping layer is then removed, such as by reactive ion etching (RIE). An antiferromagnetic layer is then deposited followed by a second capping layer. A second annealing is performed to set the magnetization of the pinned layer, the second annealing being performed at a lower temperature than the first annealing.
摘要翻译： 一种磁阻传感器的制造方法，其提供增加的磁阻性能。 该方法包括形成一系列具有至少一层含有CoFeB的传感器层，并且在其上具有第一盖层。 进行高温退火以优化传感器层的晶粒结构。 然后去除第一覆盖层，例如通过反应离子蚀刻（RIE）。 然后沉积反铁磁层，随后沉积第二盖层。 执行第二退火以设定被钉扎层的磁化，第二退火在比第一退火更低的温度下进行。
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9.发明申请DIFFERENTIAL CURRENT PERPENDICULAR TO PLANE GIANT MAGNETORESISTIVE SENSOR STRUCTURE HAVING IMPROVED ROBUSTNESS AGAINST SPIN TORQUE NOISE 有权对具有改进的旋转噪声抑制噪声的大型磁传感器结构的平均电流的差分电流公开(公告)号：US20090059437A1
公开(公告)日：2009-03-05
申请号：US11850570
申请日：2007-09-05
IPC分类号： G11B5/33
CPC分类号： G01R33/093 , B82Y25/00 , G11B5/3903 , G11B5/398 , H01F10/3254 , H01F10/3272 , H01F10/3286
摘要： A differential giant magnetoresistive sensor for sensing a magnetic signal. The differential sensor has a structure configured to minimize spin torque noise. The differential magnetoresistive sensor includes first and second magnetoresistive sensor elements and a three lead structure including an inner lead sandwiched between the first and second sensor elements and first and second outer leads. each of the sensor elements includes an antiparallel coupled free layer structure with the free layer of each of the sensor elements preferably being positioned near the inner lead. The three lead structure allows sense current to be supplied to the sensor such that electrons travel first through the free layer of each sensor element and then through the pinned layer structure.
摘要翻译： 用于感测磁信号的差分巨磁阻传感器。 微分传感器具有使旋转扭矩噪声最小化的结构。 差动磁阻传感器包括第一和第二磁阻传感器元件和三引线结构，其包括夹在第一和第二传感器元件与第一和第二外引线之间的内引线。 每个传感器元件包括反平行耦合的自由层结构，每个传感器元件的自由层优选地定位在内引线附近。 三个引线结构允许感测电流被提供给传感器，使得电子首先通过每个传感器元件的自由层，然后穿过被钉扎层结构。
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公开(公告)号：US07446979B2
公开(公告)日：2008-11-04
申请号：US10955701
申请日：2004-09-30
IPC分类号： G11B5/39
摘要： A magnetic head is disclosed having a CPP read head which produces reduced cross-track interference. The CPP read head includes a read sensor, a first shield and a second shield. The second shield has side drapes having an edge portion adjacent to the read sensor. The side drapes include a plurality of laminated layers which discourages formation of closure domains at the edge portions, and thus maintaining the side drapes in a state of high magnetic permeability. The laminated layers each include a magnetic layer and a non-magnetic spacer layer. Also disclosed is an edge closed lamination structure.
摘要翻译： 公开了一种具有产生减小的交叉磁道干扰的CPP读取头的磁头。 CPP读头包括读取传感器，第一屏蔽和第二屏蔽。 第二屏蔽件具有侧面，其具有与读取传感器相邻的边缘部分。 侧帘包括多个层压层，其阻止在边缘部分处形成封闭结构域，并且因此将侧帘保持在高磁导率的状态。 层叠层各自包括磁性层和非磁性间隔层。 还公开了一种边缘封闭层压结构。
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