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公开(公告)号：US06610612B2
公开(公告)日：2003-08-26
申请号：US10012352
申请日：2001-12-12
IPC分类号： H01L2100
CPC分类号： B82Y20/00 , H01S5/18311 , H01S5/18333 , H01S5/2215 , H01S5/34306 , H01S5/3434
摘要： A method of selectively oxidizing III-V semiconductor material is provided. There is provided a III-V semiconductor system comprising a short-period super lattice (SSL) of N periods of alternating layers of an aluminum-bearing III-V compound semiconductor material and a second III-V semiconductor material where N≧2, at least one phosphorous-rich III-V semiconductor layer, and at least one substantially phosphorous-free III-V semiconductor layer between each of the at least one phosphorous-rich layers and the SSL. The III-V semiconductor system is exposed to oxidizing atmosphere to selectively oxidize at least a portion of the SSL.
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2.发明授权Method of oxidizing strain-compensated superlattice of group III-V semiconductor 有权氧化III-V族半导体应变补偿超晶格的方法公开(公告)号：US06531414B1
公开(公告)日：2003-03-11
申请号：US09563457
申请日：2000-05-02
IPC分类号： H01L2131
CPC分类号： H01L21/31666 , B82Y20/00 , H01L21/02178 , H01L21/022 , H01L21/02241 , H01L21/02255 , H01S5/2215 , H01S5/34
摘要： A method of forming a native oxide from at least one strain-compensated superlattice of Group III-V semiconductor material, where each at least one superlattice includes two monolayers of a Group III-V semiconductor material and at least two monolayers of an aluminum-bearing Group III-V semiconductor material. The method entails exposing each at least one superlattice to a water-containing environment and a temperature of at least about 425 degrees Celsius to convert at least a portion of said superlattice to a native oxide. The native oxide thus formed is useful in electrical and optoelectrical devices, such as lasers.
摘要翻译： 从III-V族半导体材料的至少一个应变补偿超晶格形成天然氧化物的方法，其中每个至少一个超晶格包括两组III-V族半导体材料的单层和至少两层含铝的单层 III-V族半导体材料。 该方法需要将每个至少一个超晶格暴露于含水环境和至少约425摄氏度的温度以将至少一部分超晶格转化为天然氧化物。 如此形成的自然氧化物可用于诸如激光器的电和光电器件中。
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3.发明授权Vertical cavity surface emitting laser with oxidized strain-compensated superlattice of group III-V semiconductor 有权具有III-V族半导体的氧化应变补偿超晶格的垂直腔表面发射激光器公开(公告)号：US06493366B1
公开(公告)日：2002-12-10
申请号：US09564371
申请日：2000-05-02
IPC分类号： H01S500
CPC分类号： B82Y20/00 , H01S5/18311 , H01S5/18341 , H01S5/18372 , H01S5/3406 , H01S5/3425
摘要： A vertical cavity surface emitting laser that includes a Group III-V semiconductor material substrate; a first Distributed Bragg Reflector mirror, where the first Distributed Bragg Reflector mirror includes at least seven pairs of layers, where each layer has a different index of refraction, where one of the layers is a Group III-V semiconductor material, and where the other layer is a completely oxidized at least one strain-compensated superlattice of Group III-V semiconductor material, where each at least one strain-compensated superlattice includes at least two monolayers of a Group III-V semiconductor material and at least two monolayers of an aluminum-bearing Group III-V semiconductor material; a first Group III-V semiconductor material layer; a first contact; a selectively oxidized at least one strain-compensated superlattice of Group III-V semiconductor material, where each at least one strain-compensated superlattice of Group III-V semiconductor material includes at least two monolayers of a Group III-V semiconductor material and at least two monolayers of an aluminum-bearing Group III-V semiconductor material; a second Group III-V semiconductor material layer; a second contact; and a second Distributed Bragg Reflector mirror that is identical to the first Distributed Bragg Reflector mirror.
摘要翻译： 一种垂直腔表面发射激光器，包括III-V族半导体材料衬底; 第一分布布拉格反射镜，其中第一分布布拉格反射镜包括至少七对层，其中每层具有不同的折射率，其中一层是III-V族半导体材料，其中另一层 层是III-V族半导体材料的完全氧化的至少一个应变补偿超晶格，其中每个至少一个应变补偿超晶格包括至少两个III-V族半导体材料的单层和至少两个铝单层 - Ⅲ-Ⅴ族半导体材料; 第一III-V族半导体材料层; 第一次接触 选择性氧化的至少一种III-V族半导体材料的应变补偿超晶格，其中每个至少一个III-V族半导体材料的应变补偿超晶格包括至少两个III-V族半导体材料的单层，并且至少 两个含铝的III-V族半导体材料的单层; 第二组III-V族半导体材料层; 第二次接触 和与第一个分布式布拉格反射镜相同的第二个分布式布拉格反射镜。
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4.发明授权Ridge laser with oxidized strain-compensated superlattice of group III-V semiconductor 有权具有III-V族半导体氧化应变补偿超晶格的脊激光器公开(公告)号：US06407407B1
公开(公告)日：2002-06-18
申请号：US09563314
申请日：2000-05-02
IPC分类号： H01L2906
CPC分类号： B82Y20/00 , H01S5/22 , H01S5/2215 , H01S5/3216 , H01S5/3406 , H01S5/3425
摘要： A ridge laser that includes a Group III-V semiconductor material substrate; a first selectively oxidized at least one strain-compensated superlattice of Group III-V semiconductor material; a multiple quantum well active region; a second selectively oxidized at least one strain-compensated superlattice of Group III-V semiconductor material; a Group III-V semiconductor material cap layer; and a contact material. Each at least one strain-compensated superlattice includes at least two monolayers of a Group III-V semiconductor material and at least two monolayers of an aluminum-bearing Group III-V semiconductor material. In the preferred embodiment, the substrate is InP of any type; each selectively oxidized at least one strain-compensated superlattice of Group III-V semiconductor material is InAs/AlAs, where each at least one superlattice of InAs/AlAs includes at least two monolayers of InAs and at least two monolayers of AlAs; the multiple quantum well active region is InGaAsP lattice matched to the InP substrate, the Group III-V semiconductor material cap layer is InP, and the contact material is gold.
摘要翻译： 包括III-V族半导体材料基板的脊状激光器; 第III-V族半导体材料的第一选择性氧化的至少一个应变补偿超晶格; 多量子阱活性区; 第二种选择性氧化至少一种III-V族半导体材料的应变补偿超晶格; III-V族半导体材料盖层; 和接触材料。 每个至少一个应变补偿超晶格包括至少两个III-V族半导体材料的单层和含铝III-V族半导体材料的至少两个单层。 在优选实施例中，衬底是任何类型的InP; 每个选择性氧化的III-V族半导体材料的至少一个应变补偿超晶格是InAs / AlAs，其中每个至少一个InAs / AlAs的超晶格包括至少两个InAs的单层和至少两个AlAs的单层; 多量子阱有源区是与InP衬底匹配的InGaAsP晶格，III-V族半导体材料盖层是InP，接触材料是金。
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5.发明授权Coupled optical waveguide resonators with heaters for thermo-optic control of wavelength and compound filter shape 有权具有加热器的耦合光波导谐振器，用于波长和复合滤波器形状的光电控制公开(公告)号：US07231113B2
公开(公告)日：2007-06-12
申请号：US11208338
申请日：2005-08-19
申请人： Sai Chu , Frederick G. Johnson , Oliver King , Marcus Schuetz , Brent Little
发明人： Sai Chu , Frederick G. Johnson , Oliver King , Marcus Schuetz , Brent Little
CPC分类号： G02F1/0147 , G02B6/12007 , G02F1/3132
摘要： An integrated optical device is disclosed comprising a substrate, optical waveguide, and compound optical resonator having a temperature sensor, at least two coupled optical resonators, and a heater localized to each optical resonator. An optical input signal is coupled to one of the resonators making up the compound resonator to form an optical output signal. The center wavelength and shape of the output signal is optimized with a feedback loop using the temperature sensor to control the power dissipated in at least one of the localized heaters. The power dissipated in the remaining resonator heaters is set according to a predetermined function having as an input variable the power dissipated in the resonant heater under control of the said feedback loop.
摘要翻译： 公开了一种集成光学器件，其包括具有温度传感器，至少两个耦合的光谐振器和局部化到每个光学谐振器的加热器的衬底，光波导和复合光学谐振器。 光输入信号耦合到构成复合谐振器的谐振器之一以形成光输出信号。 通过使用温度传感器的反馈回路优化输出信号的中心波长和形状，以控制至少一个局部加热器中消耗的功率。 在剩余的谐振器加热器中耗散的功率根据预定功能设定，该功能在所述反馈回路的控制下具有在谐振加热器中消耗的功率作为输入变量。
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6.发明授权公开(公告)号：US06771868B2
公开(公告)日：2004-08-03
申请号：US10465881
申请日：2003-06-20
申请人： Frederick G. Johnson , Oliver S. King , John V. Hryniewicz , Lance G. Joneckis , Sai T. Chu , David M. Gill
发明人： Frederick G. Johnson , Oliver S. King , John V. Hryniewicz , Lance G. Joneckis , Sai T. Chu , David M. Gill
IPC分类号： G02B610
CPC分类号： C03C4/0042 , C03C17/3435 , C03C17/3482 , C03C2218/152 , C03C2218/33 , C23C16/308 , C23C16/401 , G02B6/132 , G02B2006/12097 , G02B2006/121
摘要： Devices and methods for the vapor deposition of amorphous, silicon-containing thin films using vapors comprised of deuterated species. Thin films grown on a substrate wafer by this method contain deuterium but little to no hydrogen. Optical devices comprised of optical waveguides formed using this method have significantly reduced optical absorption or loss in the near-infrared optical spectrum commonly used for optical communications, compared to the loss in waveguides formed in thin films grown using conventional vapor deposition techniques with hydrogen containing precursors. In one variation, the optical devices are formed on a silicon-oxide layer that is formed on a substrate, such as a silicon substrate. The optical devices of some variations are of the chemical species SiOxNy:D. Since the method of formation requires no annealing, the thin films can be grown on electronic and optical devices or portions thereof without damaging those devices.
摘要翻译： 使用由氘化物质组成的蒸气蒸发淀积无定形含硅薄膜的装置和方法。 通过该方法在衬底晶片上生长的薄膜含有氘，但几乎没有氢。 与使用常规的具有含氢前体的气相沉积技术生长的薄膜中形成的波导的损耗相比，使用该方法形成的光波导的光学器件相比，通常用于光通信的近红外光谱中的光吸收或损耗显着降低 。 在一个变型中，光学器件形成在形成在诸如硅衬底的衬底上的氧化硅层上。 一些变化的光学器件是化学物质SiO x N y：D。 由于形成方法不需要退火，所以可以在电子和光学器件或其部分上生长薄膜，而不会损坏这些器件。
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7.发明授权Coupled optical waveguide resonators with heaters for thermo-optic control of wavelength and compound filter shape 有权具有加热器的耦合光波导谐振器，用于波长和复合滤波器形状的光电控制公开(公告)号：US07903910B2
公开(公告)日：2011-03-08
申请号：US12058472
申请日：2008-03-28
申请人： Sai Chu , Frederick G. Johnson , Oliver King , Marcus Schuetz , Brent Little
发明人： Sai Chu , Frederick G. Johnson , Oliver King , Marcus Schuetz , Brent Little
CPC分类号： G02F1/0147 , G02B6/12007 , G02F1/3132
摘要： An integrated optical device is disclosed comprising a substrate, optical waveguide, and compound optical resonator having a temperature sensor, at least two coupled optical resonators, and a heater localized to each optical resonator. An optical input signal is coupled to one of the resonators making up the compound resonator to form an optical output signal. The center wavelength and shape of the output signal is optimized with a feedback loop using the temperature sensor to control the power dissipated in at least one of the localized heaters. The power dissipated in the remaining resonator heaters is set according to a predetermined function having as an input variable the power dissipated in the resonant heater under control of the said feedback loop.
摘要翻译： 公开了一种集成光学器件，其包括具有温度传感器，至少两个耦合的光谐振器和局部到每个光学谐振器的加热器的基板，光波导和复合光学谐振器。 光输入信号耦合到构成复合谐振器的谐振器之一以形成光输出信号。 通过使用温度传感器的反馈回路优化输出信号的中心波长和形状，以控制至少一个局部加热器中消耗的功率。 在剩余的谐振器加热器中耗散的功率根据预定功能设定，该功能在所述反馈回路的控制下具有在谐振加热器中消耗的功率作为输入变量。
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公开(公告)号：US06768828B2
公开(公告)日：2004-07-27
申请号：US10441052
申请日：2003-05-20
IPC分类号： G02B636
CPC分类号： G02B6/12007 , G02B6/13 , G02B2006/121
摘要： The integrated optical circuit of the present invention includes a substrate with a first cladding layer. A first core layer having one or more waveguiding elements is formed on the first cladding layer. A second cladding layer surrounds the waveguiding elements of the first core layer; the refractive index of the first and second cladding layers are selected to be less than the refractive index of the waveguiding element(s). Through simultaneous cladding material deposition and cladding material removal, the second cladding layer as deposited is substantially self-planarized, enabling further layers to be positioned on the second cladding layer without necessitating intermediate planarization. Further, the present invention permits planar waveguide cores having submicron core spacings to be covered by a subsequently-deposited cladding layer without cladding gaps, seams or other deleterious cladding defects.
摘要翻译： 本发明的集成光电路包括具有第一包层的基板。 具有一个或多个波导元件的第一芯层形成在第一覆层上。 第二覆层围绕第一芯层的波导元件; 选择第一和第二包覆层的折射率小于波导元件的折射率。 通过同时包覆材料沉积和包层材料去除，沉积的第二包覆层基本上是自平坦化的，使得能够将另外的层定位在第二覆层上，而不需要中间平面化。 此外，本发明允许具有亚微米核间距的平面波导芯被随后沉积的包层覆盖，而没有包层间隙，接缝或其它有害的包层缺陷。
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公开(公告)号：US07973265B2
公开(公告)日：2011-07-05
申请号：US12551500
申请日：2009-08-31
申请人： Sai Chu , Frederick G. Johnson , Oliver King , Marcus Schuetz , Brent Little
发明人： Sai Chu , Frederick G. Johnson , Oliver King , Marcus Schuetz , Brent Little
CPC分类号： G02F1/0147 , G02B6/12007 , G02F1/3132
摘要： An integrated optical device is disclosed comprising a substrate, optical waveguide, and compound optical resonator having a temperature sensor, at least two coupled optical resonators, and a heater localized to each optical resonator. An optical input signal is coupled to one of the resonators making up the compound resonator to form an optical output signal. The center wavelength and shape of the output signal is optimized with a feedback loop using the temperature sensor to control the power dissipated in at least one of the localized heaters. The power dissipated in the remaining resonator heaters is set according to a predetermined function having as an input variable the power dissipated in the resonant heater under control of the said feedback loop.
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10.发明授权公开(公告)号：US07435944B2
公开(公告)日：2008-10-14
申请号：US11713858
申请日：2007-03-05
CPC分类号： G01L11/02
摘要： An optically-powered integrated microstructure pressure sensing system for sensing pressure within a cavity. The pressure sensing system comprises a pressure sensor having an optical resonant structure subject to the pressure within the cavity and having physical properties changing due to changing pressures within the cavity. A substrate supports the optical resonant structure. An input optical pathway evanescently couples light into the optical resonant structure. An output optical pathway collects light from the optical resonance structure. A light source delivers a known light input into the input optical pathway whereby the known light input is evanescently coupled into the optical resonant structure by the input optical pathway and a portion of such light is collected from the optical resonant structure by the output optical pathway. A light detector receives the portion of the light collected from the optical resonant structure, and generates a light signal indicative of such portion of the light collected from the optical resonant structure. A temperature compensation sensor generates a temperature signal indicative of the temperature near the optical resonant structure. A spectrum detection device receives the light signal and temperature signal. The spectrum detection device analyzing the light signal and the temperature signal with a detection algorithm to generating a pressure signal indicative of the pressure within the cavity.
摘要翻译： 用于感测空腔内的压力的光学动力综合微结构压力感测系统。 压力感测系统包括具有光学谐振结构的压力传感器，该光学谐振结构承受空腔内的压力并且由于空腔内的压力变化而具有物理性质的变化。 基板支撑光学谐振结构。 输入光学路径ev逝地将光耦合到光学谐振结构中。 输出光学路径收集来自光学共振结构的光。 光源将已知的光输入传递到输入光学路径中，由此已知的光输入通过输入光学路径ev逝地耦合到光学谐振结构中，并且这种光的一部分通过输出光学路径从光学谐振结构收集。 光检测器接收从光学谐振结构收集的光的一部分，并且产生指示从光学谐振结构收集的光的这种部分的光信号。 温度补偿传感器产生指示光学谐振结构附近的温度的温度信号。 光谱检测装置接收光信号和温度信号。 频谱检测装置用检测算法分析光信号和温度信号，以产生指示腔内的压力的压力信号。
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