公开(公告)号：US20120125581A1

公开(公告)日：2012-05-24

申请号：US13115753

申请日：2011-05-25

申请人： Mark Allen ,  Arthur Laflamme ,  Jay Wallace ,  Peter F. Vandermeulen ,  Jack I. Hanoka ,  Chaim Hanoka

发明人： Mark Allen ,  Arthur Laflamme ,  Jay Wallace ,  Peter F. Vandermeulen ,  Jack I. Hanoka ,  Chaim Hanoka

IPC分类号： F28F3/08 ,  B32B37/30 ,  B32B37/12

CPC分类号： F24F3/1417 ,  B01D53/263 ,  B01D2252/103 ,  B01D2259/4508 ,  F24F13/02 ,  F24F2003/1435 ,  F24F2003/144 ,  F24F2003/1458 ,  F28D21/0015 ,  F28F3/10 ,  F28F19/00 ,  H01L31/042 ,  H01L31/052 ,  H01L31/0521 ,  H02S10/30 ,  H02S20/00 ,  H02S40/44 ,  Y02B10/70 ,  Y10T29/49815

摘要： Methods and systems are provided for air conditioning, capturing combustion contaminants, desalination, and other processes using liquid desiccants.

摘要翻译： 提供了用于空调，捕获燃烧污染物，脱盐和使用液体干燥剂的其它方法的方法和系统。

公开(公告)号：US20060134919A1

公开(公告)日：2006-06-22

申请号：US11337654

申请日：2006-01-24

申请人： Thomas Hamelin ,  Jay Wallace ,  Arthur Laflamme

发明人： Thomas Hamelin ,  Jay Wallace ,  Arthur Laflamme

IPC分类号： H01L21/465 ,  H01L21/477 ,  C23F1/00

CPC分类号： H01L21/67748 ,  C23C16/4405 ,  C25D11/02 ,  H01L21/0337 ,  H01L21/31116 ,  H01L21/67069 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67126 ,  H01L21/6719 ,  H01L21/67207 ,  H01L21/67248 ,  H01L21/67253 ,  Y10T29/41

摘要： A processing system and method for chemical oxide removal (COR), wherein the processing system comprises a first treatment chamber and a second treatment chamber, wherein the first and second treatment chambers are coupled to one another. The first treatment chamber comprises a chemical treatment chamber that provides a temperature controlled chamber, and an independently temperature controlled substrate holder for supporting a substrate for chemical treatment. The substrate is exposed to a gaseous chemistry, such as HF/NH3, under controlled conditions including surface temperature and gas pressure. The second treatment chamber comprises a heat treatment chamber that provides a temperature controlled chamber, thermally insulated from the chemical treatment chamber. The heat treatment chamber provides a substrate holder for controlling the temperature of the substrate to thermally process the chemically treated surfaces on the substrate.

公开(公告)号：US20060090850A1

公开(公告)日：2006-05-04

申请号：US11233077

申请日：2005-09-23

申请人： Arthur Laflamme ,  Jay Wallace ,  Eric Strang

发明人： Arthur Laflamme ,  Jay Wallace ,  Eric Strang

IPC分类号： H01L21/306 ,  C23C16/00 ,  G01L21/30

CPC分类号： H01L21/67069 ,  C23C16/45565

摘要： A chemical processing system includes a processing chamber containing a chemical processing region and a gas injection system. The gas injection system includes at least one first gas injection orifice and at least one second gas injection orifice in communication with the chemical processing region to expose a substrate to mixed first and second process gases. Other embodiments of the chemical processing system can include a sensor to sense a mixing rate of the process gases or a shroud defining a portion of the at least one first gas injection orifice to control mixing of the process gases. A method of mixing process gas in a chemical processing region of a chemical processing system is provided in which a first process gas and a second process gas are injected into the chemical processing region and mixed. A mixture rate is sensed and used to control the mixing.

摘要翻译： 化学处理系统包括含有化学处理区域和气体注入系统的处理室。 气体注入系统包括与化学处理区域连通的至少一个第一气体注入孔口和至少一个第二气体注入孔，以将衬底暴露于混合的第一和第二工艺气体。 化学处理系统的其它实施例可以包括感测处理气体的混合速率的传感器或限定至少一个第一气体喷射孔的一部分的护罩以控制处理气体的混合。 提供了在化学处理系统的化学处理区域中混合处理气体的方法，其中将第一处理气体和第二处理气体注入化学处理区域并混合。 检测混合物速率并用于控制混合。

公开(公告)号：US20050269030A1

公开(公告)日：2005-12-08

申请号：US10860149

申请日：2004-06-04

申请人： Martin Kent ,  Arthur Laflamme ,  Jay Wallace ,  Thomas Hamelin

发明人： Martin Kent ,  Arthur Laflamme ,  Jay Wallace ,  Thomas Hamelin

IPC分类号： H01L21/00 ,  C23F1/00

CPC分类号： H01L21/67178 ,  H01L21/6719 ,  H01L21/67751

摘要： A processing system and method for chemical oxide removal, wherein the processing system includes a process chamber having a lower chamber portion configured to chemically treat a substrate and an upper chamber portion configured to thermally treat the substrate, and a substrate lifting assembly configured to transport the substrate between the lower chamber portion and the upper chamber portion. The lower chamber portion includes a chemical treatment environment that provides a temperature controlled substrate holder for supporting the substrate for chemical treatment. The substrate is exposed to a gaseous chemistry, such as HF/NH3, under controlled conditions including surface temperature and gas pressure. The upper chamber portion includes a thermal treatment environment that provides a heating assembly configured to elevate the temperature of the substrate.

摘要翻译： 一种用于化学氧化物去除的处理系统和方法，其中所述处理系统包括处理室，所述处理室具有构造成化学处理基板的下室部分和被配置为热处理所述基板的上室部分，以及被配置为运输所述基板提升组件 底部在下腔室部分和上腔室部分之间。 下室部分包括化学处理环境，其提供用于支撑用于化学处理的基板的温度受控的基板保持器。 在包括表面温度和气体压力在内的受控条件下，将基底暴露于气态化学物质，例如HF / NH 3。 上室部分包括提供加热组件的热处理环境，该加热组件被配置为提升衬底的温度。

公开(公告)号：US20050211386A1

公开(公告)日：2005-09-29

申请号：US11126369

申请日：2005-05-11

申请人： Thomas Hamelin ,  Jay Wallace ,  Arthur Laflamme

发明人： Thomas Hamelin ,  Jay Wallace ,  Arthur Laflamme

IPC分类号： C23C16/44 ,  C25D11/02 ,  H01L21/00 ,  H01L21/677 ,  C23F1/00

CPC分类号： H01L21/67748 ,  C23C16/4405 ,  C25D11/02 ,  C25D11/026 ,  H01L21/67069 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67126 ,  H01L21/67207 ,  H01L21/67248 ,  H01L21/67253

摘要： A processing system and method for chemically treating a substrate, wherein the processing system comprises a temperature controlled chemical treatment chamber, and an independently temperature controlled substrate holder for supporting a substrate for chemical treatment. The substrate holder is thermally insulated from the chemical treatment chamber. The substrate is exposed to a gaseous chemistry, without plasma, under controlled conditions including wall temperature, surface temperature and gas pressure. The chemical treatment of the substrate chemically alters exposed surfaces on the substrate.

摘要翻译： 一种用于化学处理衬底的处理系统和方法，其中所述处理系统包括温度控制的化学处理室和用于支撑用于化学处理的衬底的独立温度控制的衬底保持器。 衬底保持器与化学处理室隔热。 在受控条件下，包括壁温，表面温度和气体压力，将基板暴露于无等离子体的气态化学品。 衬底的化学处理化学改变衬底上的暴露表面。

公开(公告)号：US20050098265A1

公开(公告)日：2005-05-12

申请号：US10705224

申请日：2003-11-12

申请人： Steven Fink ,  Eric Strang ,  Arthur Laflamme ,  Jay Wallace ,  Sandra Hyland

发明人： Steven Fink ,  Eric Strang ,  Arthur Laflamme ,  Jay Wallace ,  Sandra Hyland

IPC分类号： H01J37/32 ,  H01L21/00 ,  C23F1/00

CPC分类号： H01J37/32633 ,  H01J37/32834 ,  H01L21/67069

摘要： A baffle plate assembly, configured to be coupled to a substrate holder in a plasma processing system, comprises a baffle plate having one or more openings to permit the passage of gas there through, wherein the coupling of the baffle plate to the substrate holder facilitates auto-centering of the baffle plate in the plasma processing system. For example, a centering ring mounted in the substrate holder can comprise a centering feature configured to couple with a mating feature on the baffle plate. After initial assembly of the plasma processing system, the baffle plate can be replaced and centered within the plasma processing system without disassembly and re-assembly of the substrate holder.

摘要翻译： 构造成在等离子体处理系统中耦合到衬底保持器的挡板组件包括具有一个或多个开口以允许气体在其中通过的挡板，其中挡板与衬底保持器的联接有利于自动 - 等离子体处理系统中的挡板的重心。 例如，安装在基板保持器中的定心环可以包括配置成与挡板上的配合特征联接的定心特征。 在初始组装等离子体处理系统之后，挡板可以在等离子体处理系统内更换并居中，而不会拆卸和重新组装衬底支架。