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    Integrated circuit including passivated copper interconnection lines and associated manufacturing methods
    1.
    发明授权
    Integrated circuit including passivated copper interconnection lines and associated manufacturing methods 有权
    集成电路包括钝化铜互连线及相关制造方法

    公开(公告)号：US06440852B1

    公开(公告)日：2002-08-27

    申请号：US09364858

    申请日：1999-07-30

    申请人： Martin G. Meder ,  Sailesh Mansinh Merchant ,  Michael Louis Steigerwald ,  Yiu-Huen Wong

    发明人： Martin G. Meder ,  Sailesh Mansinh Merchant ,  Michael Louis Steigerwald ,  Yiu-Huen Wong

    IPC分类号： H01L2144

    CPC分类号： H01L28/60 ,  H01L21/28167 ,  H01L21/76829 ,  H01L21/76834 ,  H01L21/76888 ,  H01L23/5223 ,  H01L23/53228 ,  H01L23/53233 ,  H01L23/53238 ,  H01L23/5329 ,  H01L29/51 ,  H01L2924/0002 ,  Y10S438/958 ,  H01L2924/00

    摘要： An integrated circuit includes a substrate, and at least one copper interconnection layer adjacent the substrate. The interconnection layer further comprises copper lines, each comprising at least an upper surface portion including at least one copper fluoride compound. The copper fluoride compound preferably comprises at least one of cuprous fluoride and cupric fluoride. The compounds of copper and fluoride are relatively stable and provide a reliable and long term passivation for the underlying copper. In accordance with one particularly advantageous embodiment of the invention, the dielectric layer may comprise a fluorosilicate glass (FSG) layer. Accordingly, during formation of the FSG layer, the upper surface of the copper reacts with the fluorine to form the copper fluoride compound which then acts as the passivation layer for the underlying copper. In other embodiments, the dielectric layer may comprise an oxide or air, for example. In yet other embodiments, the copper line may include prefluorinated portions so as to avoid fluorine depletion of adjacent FSG layer portions.

    摘要翻译： 集成电路包括衬底和与衬底相邻的至少一个铜互连层。 互连层还包括铜线，每条线至少包括至少一个包含至少一个氟化铜化合物的上表面部分。 氟化铜化合物优选包含氟化亚铜和氟化铜中的至少一种。 铜和氟化物的化合物相对稳定，为底层铜提供可靠和长期的钝化。 根据本发明的一个特别有利的实施例，电介质层可以包括氟硅酸盐玻璃（FSG）层。 因此，在形成FSG层期间，铜的上表面与氟化合物反应形成氟化铜化合物，然后将其作为底层铜的钝化层。 在其它实施例中，例如，电介质层可以包括氧化物或空气。 在其它实施例中，铜线可以包括预氟化部分，以避免相邻FSG层部分的氟耗尽。

    Optical devices comprising polymer-dispersed crystalline materials
    3.
    发明授权
    Optical devices comprising polymer-dispersed crystalline materials 失效
    包含聚合物分散结晶材料的光学器件

    公开(公告)号：US6005707A

    公开(公告)日：1999-12-21

    申请号：US976002

    申请日：1997-11-21

    申请人： Magnus Rolf Berggren ,  Ananth Dodabalapur ,  Michael Louis Steigerwald

    发明人： Magnus Rolf Berggren ,  Ananth Dodabalapur ,  Michael Louis Steigerwald

    IPC分类号： G02B6/00 ,  G02B1/02 ,  G02B6/122 ,  G02F1/015 ,  G02F1/017 ,  G02F1/35 ,  C09K19/12 ,  G02B6/90

    CPC分类号： B82Y20/00 ,  G02F1/017 ,  G02F1/01708 ,  G02F2001/0153 ,  G02F2001/0157 ,  G02F2001/01791

    摘要： Optical modulators and switches for use in telecommunications systems are disclosed having solid-state crystalline optical material comprised of III-V, II-VI, and IV semiconductor nanocrystals embedded in a polymer matrix. In a preferred embodiment, the crystalline material comprises CdSe crystals sized at less than 5.8 nm in diameter and more preferably at less than about 4 nm in diameter and advantageously embedded in poly(vinyl pyridine). The crystalline material sandwiched between two electrodes defines an optical modulator. In one preferred embodiment, the crystalline material with ten-percent crystal embedded in a polymer will exhibit with an applied voltage of 100V, a differential absorbance spectra (.DELTA.A) of about 50 cm.sup.-1 at wavelengths of about 610 nm and a differential refractive index (.DELTA.n) of about 10.sup.-4 at wavelengths of about 625 nm.

    摘要翻译： 公开了用于电信系统的光调制器和开关，其具有由嵌入聚合物基质中的III-V，II-VI和IV半导体纳米晶体构成的固态晶体光学材料。 在一个优选的实施方案中，结晶材料包含直径小于5.8nm，更优选直径小于约4nm的CdSe晶体，并且有利地嵌入聚（乙烯基吡啶）中。 夹在两个电极之间的晶体材料限定了光学调制器。 在一个优选实施方案中，具有10％晶体嵌入聚合物中的结晶材料将以100V的施加电压显示出约610cm波长的差分吸收光谱（DELTA A）约为50cm -1，差示折射率 指数（DELTA n）在约625nm的波长处约为10-4。

    Electrochemical process for fabricating article exhibiting substantial three-dimensional order and resultant article
    4.
    发明授权
    Electrochemical process for fabricating article exhibiting substantial three-dimensional order and resultant article 有权
    用于制造具有实质的三维顺序和所得制品的制品的电化学方法

    公开(公告)号：US06409907B1

    公开(公告)日：2002-06-25

    申请号：US09248858

    申请日：1999-02-11

    申请人： Paul VanNest Braun ,  Michael Louis Steigerwald ,  Pierre Wiltzius

    发明人： Paul VanNest Braun ,  Michael Louis Steigerwald ,  Pierre Wiltzius

    IPC分类号： C25D1100

    CPC分类号： B82Y20/00 ,  G02B6/1225

    摘要： A structure, e.g., a photonic band gap material, exhibiting substantial periodicity on a micron scale is provided. Fabrication involves the steps of providing a template comprising a colloidal crystal, placing the template in an electrolytic solution, electrochemically forming a lattice material, e.g., a high refractive index material, on the colloidal crystal, and then removing the colloidal crystal particles to form the desired structure. The electrodeposition provides a dense, uniform lattice, because formation of the lattice material begins near a conductive substrate, for example, and growth occurs substantially along a plane moving in a single direction, e.g., normal to the conductive substrate. Moreover, because the electrochemically grown lattice is a three-dimensionally interconnected solid, there is very little shrinkage upon subsequent treatment.

    摘要翻译： 提供了一种以微米尺度表现出大量周期性的结构，例如光子带隙材料。 制备涉及以下步骤：提供包含胶体晶体的模板，将模板置于电解溶液中，在胶体晶体上电化学形成晶格材料，例如高折射率材料，然后除去胶体晶体颗粒，形成 所需结构。 电沉积提供致密的均匀晶格，因为晶格材料的形成开始在导电基底附近，例如，生长基本上沿着沿单个方向移动的平面（例如垂直于导电基底）发生。 此外，由于电化学生长的晶格是三维互连的固体，因此随后的处理几乎没有收缩。