公开(公告)号：US5480532A

公开(公告)日：1996-01-02

申请号：US336769

申请日：1994-11-09

申请人： Martin Schlott ,  Martin Kutzner ,  Martin Weigert ,  Uwe Konietzka ,  Bruce Gehman ,  Shawn Vahlstrom

发明人： Martin Schlott ,  Martin Kutzner ,  Martin Weigert ,  Uwe Konietzka ,  Bruce Gehman ,  Shawn Vahlstrom

IPC分类号： C04B35/00 ,  C04B35/01 ,  C04B35/457 ,  C23C14/08 ,  C23C14/34

CPC分类号： C04B35/01 ,  C23C14/086 ,  C23C14/3414

摘要： A target for production of transparent electrically conductive layers by cathode sputtering is produced from indium oxide-tin oxide powder mixtures or coprecipitated indium oxide-tin oxide powders. A target with especially high mechanical strength consists of an oxide ceramic material into which metallic phase components have been incorporated in a uniform and finely distributed manner and which has a density of more than 96% of the theoretical density of indium oxide/tin oxide consisting purely of oxide.

摘要翻译： 通过阴极溅射制造透明导电层的目标是由氧化铟 - 氧化锡粉末混合物或共沉淀的氧化铟 - 氧化锡粉末制成。 具有特别高的机械强度的靶材由氧化物陶瓷材料组成，其中金属相组分以均匀和精细分布的方式引入其中，并且其密度大于纯的氧化铟/氧化锡的理论密度的96％ 的氧化物。

公开(公告)号：US5480531A

公开(公告)日：1996-01-02

申请号：US106986

申请日：1993-08-16

申请人： Martin Weigert ,  Uwe Konietzka ,  Bruce Gehman

发明人： Martin Weigert ,  Uwe Konietzka ,  Bruce Gehman

IPC分类号： C04B35/01 ,  C04B35/645 ,  C23C14/34 ,  C04B35/457 ,  C23C14/08

CPC分类号： C04B35/645 ,  C04B35/01 ,  C23C14/3414

摘要： Oxide-ceramic targets of partially reduced indium oxide-tin oxide mixtures are described. The targets provide high sputter performances, and they exhibit an essentially defined degree of reduction between 0.02 and 0.3, a density between 75 and 98% of the theoretical density and a specific electric resistance between 89.times.10.sup.-3 and 0.25.times.10.sup.-3 .OMEGA. cm. The degree of reduction must not deviate at any point on the target surface by more than 5% from the average degree of reduction of the target. The targets are produced by means of hot-pressing the oxide mixtures which were partially reduced beforehand in a special method step.

摘要翻译： 描述部分还原的氧化铟 - 氧化锡混合物的氧化物 - 陶瓷靶。 这些靶提供高的溅射性能，并且它们表现出基本上限定的0.02和0.3之间的减小程度，理论密度的75-98％之间的密度以及89×10 -3和0.25×10 -3欧米加厘米之间的比电阻。 目标表面的任何一点的减少程度不能偏离目标平均减少程度的5％以上。 通过在特殊的方法步骤中预先将部分减少的氧化物混合物热压制备目标物。

公开(公告)号：US20060207740A1

公开(公告)日：2006-09-21

申请号：US11357525

申请日：2006-02-17

申请人： Martin Weigert ,  Josef Heindel ,  Uwe Konietzka

发明人： Martin Weigert ,  Josef Heindel ,  Uwe Konietzka

IPC分类号： B22D27/15

CPC分类号： C23C14/3414 ,  B22D15/02 ,  B22D27/15

摘要： A sputtering target and a process for producing a sputtering target from a silicon-based alloy with an aluminum content of more than 6 wt. % up to 50 wt. %. Preferably, the aluminum content of the alloy is at least 8 wt. %, but no more than 30 wt. %. The target material is produced by a casting technique in which the material is melted and vacuum-cast, such that the casting is carried out in a hollow cylindrical casting mold.

摘要翻译： 溅射靶和铝含量大于6重量％的硅基合金制造溅射靶的方法。 ％至50重量％ ％。 优选地，合金的铝含量为至少8重量％。 ％，但不超过30wt。 ％。 目标材料通过铸造技术制造，其中材料被熔化和真空铸造，使得铸造在中空圆柱形铸模中进行。

公开(公告)号：US06581669B2

公开(公告)日：2003-06-24

申请号：US09829434

申请日：2001-04-10

申请人： Martin Weigert ,  Uwe Konietzka

发明人： Martin Weigert ,  Uwe Konietzka

IPC分类号： B22D2715

CPC分类号： C23C14/3414 ,  B22D25/00

摘要： The target material for a sputtering target for depositing silicon layers in their nitride or oxide form by means of reactive cathode atomization, such as e.g. Si3N4 or SiO2 in the form of optical functional layers or in the form of thermal protective layers on glass substrates, is a cast silicon element, that has been solidified from the melt condition and which forms a parallelepiped, with a dopant, that has been mixed in with the melt, whereby the dopant is 1 wt % to 15 wt % aluminum, and whereby the casting mold preferably has a cavity which forms a parallelepiped.

公开(公告)号：US20050092455A1

公开(公告)日：2005-05-05

申请号：US11012982

申请日：2004-12-15

申请人： Martin Weigert ,  Josef Heindel ,  Uwe Konietzka

发明人： Martin Weigert ,  Josef Heindel ,  Uwe Konietzka

IPC分类号： B22D18/04 ,  B22D15/02 ,  B22D27/15 ,  C22C28/00 ,  C23C14/34 ,  B22C1/00

CPC分类号： C23C14/3414 ,  B22D15/02 ,  B22D27/15

摘要： A process for producing a sputtering target from a silicon-based alloy with an aluminum content of 5-50 wt. %. The target material is produced by a casting technique in which the material is melted and vacuum-cast, such that the casting is carried out in a hollow cylindrical casting mold.

摘要翻译： 一种铝含量为5-50wt。％的硅基合金制造溅射靶的方法。 ％。 目标材料通过铸造技术制造，其中材料被熔化和真空铸造，使得铸造在中空圆柱形铸模中进行。

公开(公告)号：US5407548A

公开(公告)日：1995-04-18

申请号：US54690

申请日：1993-04-29

申请人： Uwe Kopacz ,  Christoph Daube ,  Andreas Rack ,  Horst Becker ,  Uwe Konietzka ,  Martin Weigert

发明人： Uwe Kopacz ,  Christoph Daube ,  Andreas Rack ,  Horst Becker ,  Uwe Konietzka ,  Martin Weigert

IPC分类号： C23C14/00 ,  C23C14/14 ,  C23C14/34 ,  H01J37/34

CPC分类号： H01J37/3426 ,  C23C14/0036 ,  C23C14/14 ,  C23C14/3407 ,  H01J37/3408 ,  H01J37/3491 ,  H01J2237/3321

摘要： The invention concerns a process for coating a substrate 1 of little or no corrosion resistance, especially a metal substrate having an alloy consisting at least of Ni, Cr and Fe, in an evacuable coating chamber 15, 15a. It comprises making an electrode that can be connected to a current supply 10, this electrode being electrically connected to a target 3 which is sputtered and the sputtered particles of which are deposited on the substrate 1. Reactive process gases are, for this purpose, supplied to the coating chamber 15, 15a, so that an amorphously depositing layer 2 is applied onto the substrate.

摘要翻译： 本发明涉及一种在可抽真空的涂布室15,15a中涂覆几乎或不具有耐腐蚀性的基材1，特别是具有至少由Ni，Cr和Fe组成的合金的金属基材的方法。 它包括制造可以连接到电流源10的电极，该电极电连接到溅射的靶3，并且溅射的颗粒沉积在衬底1上。为此，提供反应性工艺气体 到涂覆室15,15a，使得非晶体沉积层2被施加到基底上。