利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

225 条记录 (耗时 0.033 秒)

    Method and apparatus for producing photoelectric conversion device
    1.
    发明授权
    Method and apparatus for producing photoelectric conversion device 失效
    光电转换装置的制造方法及装置

    公开(公告)号：US06391743B1

    公开(公告)日：2002-05-21

    申请号：US09401775

    申请日：1999-09-22

    申请人： Masaaki Iwane ,  Takao Yonehara ,  Kazuaki Ohmi ,  Shoji Nishida ,  Kiyofumi Sakaguchi ,  Kazutaka Yanagita

    发明人： Masaaki Iwane ,  Takao Yonehara ,  Kazuaki Ohmi ,  Shoji Nishida ,  Kiyofumi Sakaguchi ,  Kazutaka Yanagita

    IPC分类号： H01L2130

    CPC分类号： H01L31/072 ,  H01L21/67092 ,  H01L21/76254 ,  H01L2221/68363 ,  Y02E10/50

    摘要： There is disclosed a method of producing a photoelectric conversion device comprising the steps of forming a semiconductor substrate comprising a first and a second semiconductor layers with a separation layer therebetween; bonding a support substrate to a surface of the second semiconductor layer opposite to the separation-layer-side surface to form a bonded substrate; separating the first and the second semiconductor layers by the separation layer; and producing a photoelectric conversion device in the second semiconductor layer, wherein when bonding the semiconductor substrate and the support substrate to each other, at least a portion is formed in the bonded substrate in which at least a part of end portions of the semiconductor substrate and the support substrate is not bonded to the other substrate and a fluid is jetted against a side surface of the bonded substrate, thereby separating the first and the second semiconductor layers. The method makes it possible to separate a bonded substrate with a high yield, thereby supplying photoelectric conversion devices with a high quality at a low production cost.

    摘要翻译： 公开了一种制造光电转换装置的方法，包括以下步骤：形成包括第一和第二半导体层的半导体衬底，其间具有分离层; 将支撑基板接合到与分离层侧表面相对的第二半导体层的表面，以形成键合衬底; 通过分离层分离第一和第二半导体层; 以及在所述第二半导体层中制造光电转换器件，其中当将所述半导体衬底和所述支撑衬底彼此接合时，至少一部分形成在所述键合衬底中，其中所述半导体衬底和所述支撑衬底的至少一部分端部和 支撑基板不与另一个基板接合，并且流体相对于键合衬底的侧表面喷射，从而分离第一和第二半导体层。 该方法可以以高产率分离粘合的基片，从而以低的生产成本提供高质量的光电转换装置。

    Separating apparatus, separating method, and method of manufacturing semiconductor substrate
    3.
    发明授权
    Separating apparatus, separating method, and method of manufacturing semiconductor substrate 失效
    分离装置，分离方法和制造半导体衬底的方法

    公开(公告)号：US06609446B1

    公开(公告)日：2003-08-26

    申请号：US09495847

    申请日：2000-02-01

    申请人： Kazuaki Ohmi ,  Takao Yonehara ,  Kiyofumi Sakaguchi ,  Kazutaka Yanagita ,  Hirokazu Kurisu

    发明人： Kazuaki Ohmi ,  Takao Yonehara ,  Kiyofumi Sakaguchi ,  Kazutaka Yanagita ,  Hirokazu Kurisu

    IPC分类号： B23B2710

    CPC分类号： H01L21/67092 ,  H01L21/76259 ,  Y10T82/16 ,  Y10T82/16016 ,  Y10T82/16065

    摘要： When a bonded substrate stack prepared by bonding a first substrate in which a single-crystal Si layer is formed on a porous layer, and an insulating layer is formed on the single-crystal Si layer to a second substrate is to be separated at the porous layer, serrate defects at the peripheral portion of the separated substrates are prevented. A fluid is ejected from an ejection nozzle (112) and injected into the porous layer of a bonded substrate stack (30) while rotating the bonded substrate stack (30) about an axis (C) in a direction (R), thereby separating the bonded substrate stack (30) into two substrates at the porous layer. When the peripheral portion of the bonded substrate stack (30) is to be separated, the ejection nozzle (112) is located within a range (B).

    摘要翻译： 当在多晶层上形成单晶Si层的第一衬底与第二衬底之间形成绝缘层而制备的键合衬底叠层在多孔 可以防止分离的基板的周边部分的层，锯齿状缺陷。 从喷嘴（112）喷射流体并将其注入到键合衬底叠层（30）的多孔层中，同时使键合衬底叠层（30）绕轴线（C）沿方向（R）旋转，从而将 键合衬底叠层（30）在多孔层上形成两个衬底。 当键合衬底叠层（30）的周边部分被分离时，喷嘴（112）位于范围（B）内。

    Separating apparatus, separating method, and method of manufacturing semiconductor substrate
    7.
    发明授权
    Separating apparatus, separating method, and method of manufacturing semiconductor substrate 失效
    分离装置，分离方法和制造半导体衬底的方法

    公开(公告)号：US06900114B2

    公开(公告)日：2005-05-31

    申请号：US10602922

    申请日：2003-06-25

    申请人： Kazuaki Ohmi ,  Takao Yonehara ,  Kiyofumi Sakaguchi ,  Kazutaka Yanagita ,  Hirokazu Kurisu

    发明人： Kazuaki Ohmi ,  Takao Yonehara ,  Kiyofumi Sakaguchi ,  Kazutaka Yanagita ,  Hirokazu Kurisu

    IPC分类号： H01L27/12 ,  H01L21/00 ,  H01L21/02 ,  H01L21/762 ,  H01L21/763 ,  H01L21/30 ,  H01L21/46

    CPC分类号： H01L21/67092 ,  H01L21/76259 ,  Y10T82/16 ,  Y10T82/16016 ,  Y10T82/16065

    摘要： When a bonded substrate stack prepared by bonding a first substrate in which a single-crystal Si layer is formed on a porous layer, and an insulating layer is formed on the single-crystal Si layer to a second substrate is to be separated at the porous layer, serrate defects at the peripheral portion of the separated substrates are prevented. A fluid is ejected from an ejection nozzle (112) and injected into the porous layer of a bonded substrate stack (30) while rotating the bonded substrate stack (30) about an axis (C) in a direction (R), thereby separating the bonded substrate stack (30) into two substrates at the porous layer. When the peripheral portion of the bonded substrate stack (30) is to be separated, the ejection nozzle (112) is located within a range (B).

    摘要翻译： 当在多晶层上形成单晶Si层的第一衬底与第二衬底之间形成绝缘层而制备的键合衬底叠层在多孔 可以防止分离的基板的周边部分的层，锯齿状缺陷。 从喷嘴（112）喷射流体并将其注入到键合衬底叠层（30）的多孔层中，同时使键合衬底叠层（30）绕轴线（C）沿方向（R）旋转，从而将 键合衬底叠层（30）在多孔层上形成两个衬底。 当键合衬底叠层（30）的周边部分被分离时，喷嘴（112）位于范围（B）内。

    Production method of photoelectric conversion device, and photoelectric conversion device produced by the method
    8.
    发明授权
    Production method of photoelectric conversion device, and photoelectric conversion device produced by the method 失效
    光电转换装置的生产方法，以及通过该方法生产的光电转换装置

    公开(公告)号：US06534336B1

    公开(公告)日：2003-03-18

    申请号：US09572940

    申请日：2000-05-18

    申请人： Masaaki Iwane ,  Takao Yonehara ,  Shoji Nishida ,  Kiyofumi Sakaguchi

    发明人： Masaaki Iwane ,  Takao Yonehara ,  Shoji Nishida ,  Kiyofumi Sakaguchi

    IPC分类号： H01L2100

    CPC分类号： H01L31/1892 ,  H01L31/0236 ,  H01L31/02363 ,  H01L31/056 ,  H01L31/1804 ,  H01L31/184 ,  Y02E10/52 ,  Y02E10/544 ,  Y02E10/547 ,  Y02P70/521

    摘要： The present invention provides a production method of a photoelectric conversion device, which comprises a step of forming an uneven shape on a surface of a substrate, a step of providing a separation layer maintaining the uneven shape on the substrate, a step of forming a semiconductor film maintaining the uneven shape on the separation layer, and a step of separating the semiconductor film from the substrate at the separation layer, wherein the step of forming the uneven shape on the surface of the substrate is a step of forming the substrate having the uneven shape on the surface by anisotropic etching of the substrate with the separation layer remaining after the separation. The present invention also provides a photoelectric conversion device produced by the above method.

    摘要翻译： 本发明提供了一种光电转换装置的制造方法，其特征在于，包括在基板的表面上形成不均匀的形状的步骤，在基板上设置保持凹凸形状的分离层的工序，形成半导体 在分离层上保持不均匀形状的膜，以及在分离层处分离半导体膜与基板的步骤，其中在基板的表面上形成不均匀形状的步骤是形成具有不平坦的基板的步骤 通过分离后残留分离层的基板的各向异性蚀刻在表面上形成。 本发明还提供一种通过上述方法制造的光电转换装置。

    Process for producing solar cell, process for producing thin-film semiconductor, process for separating thin-film semiconductor, and process for forming semiconductor
    9.
    发明授权
    Process for producing solar cell, process for producing thin-film semiconductor, process for separating thin-film semiconductor, and process for forming semiconductor 有权
    太阳能电池的制造方法，薄膜半导体的制造方法，薄膜半导体的分离方法以及半导体的形成工序

    公开(公告)号：US06331208B1

    公开(公告)日：2001-12-18

    申请号：US09310954

    申请日：1999-05-13

    申请人： Shoji Nishida ,  Takao Yonehara ,  Kiyofumi Sakaguchi ,  Masaaki Iwane

    发明人： Shoji Nishida ,  Takao Yonehara ,  Kiyofumi Sakaguchi ,  Masaaki Iwane

    IPC分类号： C30B2518

    CPC分类号： H01L31/18 ,  C30B25/18 ,  C30B29/06 ,  C30B33/00 ,  H01L21/306 ,  H01L21/76898 ,  H01L31/1804 ,  H01L2224/83102 ,  H01L2224/92125 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  Y02E10/547 ,  Y02P70/521 ,  Y10S117/915

    摘要： A crystal silicon substrate is anodized to form a porous layer thereon, and a thin-film crystal is grown by epitaxial growth on the porous layer. Openings extending from the surface of the grown crystal and reaching the porous layer are provided by applying laser beams, and the porous layer is selectively etched through the openings to separate the thin-film crystal from the substrate. The thin-film crystal separated is transferred to another supporting substrate to form a solar cell. Also, porous silicon layers serving as separation layers are formed on a substrate silicon wafer on both sides, and thin-film semiconductor (thin-film single-crystal silicon) layers are formed by epitaxial growth on both porous silicon layers. Then, through openings are made in the thin-film single-crystal silicon layers. Thereafter, the porous silicon layers are removed by wet etching carried out through the openings to separate two thin-film single-crystal silicon layers simultaneously from the wafer. When solar cells are formed, the thin-film single-crystal silicon layers are used as electricity generation layers, and the openings as through holes for a contact electrode. A back electrode is further provided on each thin-film single-crystal silicon layer, and this is attached to a base conductive substrate via an insulating layer.

    摘要翻译： 阳极氧化晶体硅衬底以在其上形成多孔层，并且通过在多孔层上外延生长生长薄膜晶体。 通过施加激光束从生长的晶体的表面延伸并到达多孔层的开口是通过开口选择性地蚀刻，并将薄膜晶体从衬底分离出来的。 将分离的薄膜晶体转移到另一个支撑基板上以形成太阳能电池。 此外，在两面的基板硅晶片上形成用作分离层的多孔硅层，并且通过在两个多孔硅层上外延生长形成薄膜半导体（薄膜单晶硅）层。 然后，在薄膜单晶硅层中形成通孔。 此后，通过通过开口进行的湿蚀刻除去多孔硅层，以从晶片同时分离两个薄膜单晶硅层。 当形成太阳能电池时，薄膜单晶硅层用作发电层，开口用作接触电极的通孔。 在每个薄膜单晶硅层上还设置有背电极，并且经由绝缘层将其附接到基底导电基板。