摘要:
The gas phase catalytic oxidation of an unsaturated aldehyde with molecular oxygen at 240.degree. to 390.degree. C to give the corresponding unsaturated carboxylic acid is conducted in the presence of a catalyst represented by the following formula:P.sub.a Mo.sub.b As.sub.c (NH.sub.4).sub.d X.sub.e Y.sub.f O.sub.gwherein a, b, c, e, f and g represent the atomic ratio of each component and a is 0.03 to 0.2, b is 1, c is 0.015 to 0.15, e is 0.003 to 1, f is 0 to 0.17, g is a value determined by the valencies of the elements present in the catalyst, and d designates the number of ammonium groups which are within the range of 0.01 to 0.3, and wherein X is at least one metal selected from the group consisting of vanadium, tungsten, copper, iron, manganese and tin, and Y is at least one alkali metal element selected from the group consisting of lithium, sodium, potassium, rubidium and cesium. This catalyst is especially effective for the preparation of methacrylic acid from methacrolein, and it has a very long life.
摘要:
The gas phase catalytic oxidation of an unsaturated aldehyde with molecular oxygen at 240.degree. to 390.degree. C to give the corresponding unsaturated carboxylic acid is conducted in the presence of a catalyst represented by the following formula:P.sub.a Mo.sub.b As.sub.c X.sub.d Y.sub.e Z.sub.f O.sub.gwherein a, b, c, d, e, f and g represent the atomic ratio of each component and a is 0.03 to 0.2, b is 1, c is 0.015 to 0.15, d is 0.003 to 1, e is 0.003 to 0.417, f is 0.003 to 1, and g is a value determined by the valencies of the elements present in the catalyst; and wherein X is copper, vanadium or mixtures thereof Y is at least one alkali metal selected from the group consisting of lithium, sodium, potassium, rubidium and cesium, and Z is at least one metal selected from the group consisting of magnesium, aluminum, calcium, titanium, zirconium, silver, antimony, tellurium, barium, tantalum and silicon. This catalyst is especially effective for the preparation of methacrylic acid from methacrolein, and has a very long lifetime.
摘要:
In a semiconductor device of the present invention, a clock is not changed instantaneously but it is changed over maximum N+1/M clocks (N: integer not less than 2) by shifting delay cells stepwisely to make the phase state of a previous reference signal and the phase state of a present reference signal coincide with each other, whereby the clock is synchronized with the reference signal with accuracy, and the duty of the output clock is kept constant. According to the semiconductor device of the present invention, it is possible to prevent the duty of the clock from being discontinuous when a signal whose reference signal does not coincide with the clock is inputted and reset is made to a rising edge of this reference signal.
摘要:
A terminal support device mounting structure has a terminal support device and a bracket. The bracket has an opening, a mounting hole, a thick portion, and an engagement portion. The thick portion is located around the opening and the mounting hole. The engagement portion is provided to extend from the thick portion in an axial line direction X. The terminal support device has a socket. The socket has a mounted portion having an introduction portion and a sliding contact portion, a pair of flanges, a flexible portion having a pawl and an arm, and a rotation restriction portion. The pawl is engaged with the engagement portion during rotation. The arm supports the pawl such that the pawl can be engaged with the engagement portion. The rotation restriction portion restricts rotation of the socket after rotation causes the pawl to pass over the engagement portion.
摘要:
The present invention provides a semiconductor inspection method which detects a short circuit failure of adjacent lines having the possibility of a short circuit occurring, which short circuit failure cannot be detected by the conventional semiconductor inspection methods. The semiconductor inspection method comprises steps of: extracting adjacent lines having the possibility of a short circuit occurring between the lines from a layout patter of a semiconductor (step S101), obtaining input logical values such that one of the adjacent lines has a logical value “1” while the other has a logical value “0” (step S102), and monitoring outputs of a logical circuit which receives the input logical values, thereby to compare the outputs with output logical values which are expected when the input logical values are input to the logical circuit (step S103). Therefore, the short circuit failure of the adjacent lines in the logical circuit can be correctly detected in a short time.
摘要:
A synchronous clock generation apparatus including a multiplier for multiplying a horizontal synchronizing signal by a horizontal synchronizing pulse signal to generate multiplication data, a gain variable digital LPF for extracting only DC components from the multiplication data and capable of performing gain adjustment, and a controller for calculating gain adjustment data, lock center frequency setting data, and LPF gain adjustment data based on the correction data. The controller detects an amount of deviation from the lock center frequency and an amount of variation, displaces the lock center frequency and shifts the lock range along the frequency axis to enlarge the apparent lock range when the amount of deviation is large, and reduces the gain to improve lock precision when the amount of variation is small, without expanding bits in the circuit configuration.
摘要:
A clock generation apparatus is provided with a frequency phase error calculation circuit 120, whereby a clock synchronized with burst lock and a line lock clock can be simultaneously generated by a DTO 121 on the basis of frequency information of a DTO 10 and phase error information from a phase comparator 7 and a digital LPF 8. Therefore, the clock generation apparatus can cope with a system that required plural clocks, and frequency spread is easily carried out by generating spread information by a frequency spread information generation circuit 90, and adding it in the DTO 121. As a result, interference to a video terminal from the clock can be reduced, and performance of a video terminal such as a television receiver can be exploited.
摘要:
A clock generation apparatus is provided with a frequency phase error calculation circuit 120, whereby a clock synchronized with burst lock and a line lock clock can be simultaneously generated by a DTO 121 on the basis of frequency information of a DTO 10 and phase error information from a phase comparator 7 and a digital LPF 8. Therefore, the clock generation apparatus can cope with a system that required plural clocks, and frequency spread is easily carried out by generating spread information by a frequency spread information generation circuit 90, and adding it in the DTO 121. As a result, interference to a video terminal from the clock can be reduced, and performance of a video terminal such as a television receiver can be exploited.
摘要:
A semiconductor device that generates a clock which is synchronized with a reference signal stably and with fixed synchronization accuracy, and enables to deal with an abrupt variation in the reference signal. This semiconductor device includes N stages of delay elements each delaying an external clock by 1/N clock (N: an integer that is two or larger); a phase comparator for comparing the phase of a clock that has been delayed by the N stages of the delay elements with the phase of the external clock one clock late; a controller that receives a phase difference detected by the phase comparator and controls respective delays of the delay elements; and a selector for selecting a delayed clock having the closest phase to the reference signal from delayed clocks which are generated by the N stages of the delay elements, respectively, and shifted in phase with each other by 1/N clock.
摘要:
A method of manufacturing a solar cell panel, includes steps (a) to (e). The step (a) is a step of forming a solar cell module by laminating solar cell films on a transparency substrate. The step (b) is a step of performing an inspection of electric power generation on the solar cell module. The step (c) is a step of forming a solar cell panel by executing a panel formation on the solar cell module. The step (d) is a step of cleaning a light incidence surface of the solar cell panel. The step (e) is a step of performing an inspection of electric power generation on the solar cell panel. The step (d) is executed immediately before the step (e).