公开(公告)号：US08724190B2

公开(公告)日：2014-05-13

申请号：US13466563

申请日：2012-05-08

申请人： Masahiro Kitayama ,  Hiromitsu Shimizu ,  Yasuaki Miyazaki ,  Yuji Sone ,  Shota Miyajima ,  Kohichi Irie ,  Shigeto Miyauchi ,  Wei Jing

发明人： Masahiro Kitayama ,  Hiromitsu Shimizu ,  Yasuaki Miyazaki ,  Yuji Sone ,  Shota Miyajima ,  Kohichi Irie ,  Shigeto Miyauchi ,  Wei Jing

IPC分类号： H04N1/04

CPC分类号： H04N1/00925 ,  G06K15/1823 ,  G06K15/4065 ,  G06K15/408 ,  H04N1/00623 ,  H04N1/0096 ,  H04N1/2353 ,  H04N2201/0094

摘要： An image forming apparatus includes an image forming unit configured to start image formation in accordance with a second job while performing the image formation in accordance with a first job, each of the first job and the second job including information indicating one of paper feeding units; a detecting unit configured to detect whether a recording medium is stored in a paper feeding unit indicated by the first job; and an image formation control unit configured to cause the image forming unit to continue the image formation in accordance with the second job when the detecting unit detects that a recording medium is stored in the paper feeding unit, and cause the image forming unit to suspend the image formation in accordance with the second job when the detecting unit detects that no recording medium is stored in the paper feeding unit.

摘要翻译： 图像形成装置包括图像形成单元，被配置为根据第一作业执行图像形成，根据第二作业开始图像形成，第一作业和第二作业中的每一个包括指示给纸单元的信息; 检测单元，被配置为检测记录介质是否存储在由所述第一作业指示的供纸单元中; 以及图像形成控制单元，被配置为当所述检测单元检测到所述记录介质被存储在所述供纸单元中时，使所述图像形成单元继续根据所述第二作业的图像形成，并使所述图像形成单元暂停所述图像形成单元 当检测单元检测到没有记录介质存储在供纸单元中时，根据第二作业的图像形成。

公开(公告)号：US20120287486A1

公开(公告)日：2012-11-15

申请号：US13466563

申请日：2012-05-08

申请人： Masahiro Kitayama ,  Hiromitsu Shimizu ,  Yasuaki Miyazaki ,  Yuji Sone ,  Shota Miyajima ,  Kohichi Irie ,  Shigeto Miyauchi ,  Wei Jing

发明人： Masahiro Kitayama ,  Hiromitsu Shimizu ,  Yasuaki Miyazaki ,  Yuji Sone ,  Shota Miyajima ,  Kohichi Irie ,  Shigeto Miyauchi ,  Wei Jing

IPC分类号： H04N1/04

CPC分类号： H04N1/00925 ,  G06K15/1823 ,  G06K15/4065 ,  G06K15/408 ,  H04N1/00623 ,  H04N1/0096 ,  H04N1/2353 ,  H04N2201/0094

摘要： An image forming apparatus includes an image forming unit configured to start image formation in accordance with a second job while performing the image formation in accordance with a first job, each of the first job and the second job including information indicating one of paper feeding units; a detecting unit configured to detect whether a recording medium is stored in a paper feeding unit indicated by the first job; and an image formation control unit configured to cause the image forming unit to continue the image formation in accordance with the second job when the detecting unit detects that a recording medium is stored in the paper feeding unit, and cause the image forming unit to suspend the image formation in accordance with the second job when the detecting unit detects that no recording medium is stored in the paper feeding unit.

摘要翻译： 图像形成装置包括图像形成单元，被配置为根据第一作业执行图像形成，根据第二作业开始图像形成，第一作业和第二作业中的每一个包括指示给纸单元的信息; 检测单元，被配置为检测记录介质是否存储在由所述第一作业指示的供纸单元中; 以及图像形成控制单元，被配置为当所述检测单元检测到所述记录介质被存储在所述供纸单元中时，使所述图像形成单元继续根据所述第二作业的图像形成，并使所述图像形成单元暂停所述图像形成单元 当检测单元检测到没有记录介质存储在供纸单元中时，根据第二作业的图像形成。

公开(公告)号：US11315961B2

公开(公告)日：2022-04-26

申请号：US16486224

申请日：2018-03-15

申请人： Sadanori Arae ,  Yuichi Ando ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Naoyuki Ueda ,  Ryoichi Saotome ,  Minehide Kusayanagi

发明人： Sadanori Arae ,  Yuichi Ando ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Naoyuki Ueda ,  Ryoichi Saotome ,  Minehide Kusayanagi

IPC分类号： H01L27/12 ,  H01L29/417

摘要： (Object) To miniaturize a field-effect transistor. (Means of Achieving the Object) A field-effect transistor includes a semiconductor film formed on a base, a gate insulating film formed on a part of the semiconductor film, a gate electrode formed on the gate insulating film, and a source electrode and a drain electrode formed in contact with the semiconductor film, wherein a thickness of the source electrode and the drain electrode is smaller than a thickness of the gate insulating film, and the gate insulating film includes a region that is not in contact with the source electrode or the drain electrode.

公开(公告)号：US10204799B2

公开(公告)日：2019-02-12

申请号：US15376895

申请日：2016-12-13

申请人： Minehide Kusayanagi ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Ryoichi Saotome ,  Sadanori Arae

发明人： Minehide Kusayanagi ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Ryoichi Saotome ,  Sadanori Arae

IPC分类号： H01L21/44 ,  H01L29/24 ,  H01L29/45 ,  H01L29/66 ,  H01L21/477 ,  H01L29/786

摘要： A method for manufacturing a field-effect transistor includes forming an active layer of an oxide semiconductor, forming a conducting film to cover the active layer, patterning the conducting film through an etching process using an etchant to form a source electrode and a drain electrode, and performing, at least before the patterning the conducting film, a treatment on the active layer so that an etching rate of the active layer is less than an etching rate of the conducting film.

公开(公告)号：US10020374B2

公开(公告)日：2018-07-10

申请号：US13515463

申请日：2010-12-22

申请人： Yuji Sone ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe

发明人： Yuji Sone ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe

IPC分类号： H01L29/04 ,  H01L29/49 ,  H01L29/786 ,  H01L29/788 ,  G09G3/20 ,  G09G3/3233 ,  G09G3/36 ,  H01L27/108 ,  H01L27/32 ,  G02F1/1368 ,  G02F1/163

CPC分类号： H01L29/4908 ,  G02F1/1368 ,  G02F2001/1635 ,  G09G3/20 ,  G09G3/3233 ,  G09G3/3648 ,  H01L27/10873 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/3248 ,  H01L27/3262 ,  H01L29/41733 ,  H01L29/7869 ,  H01L29/7881

摘要： A field-effect transistor includes a substrate; a source electrode, a drain electrode, and a gate electrode that are formed on the substrate; a semiconductor layer by which a channel is formed between the source electrode and the drain electrode when a predetermined voltage is applied to the gate electrode; and a gate insulating layer provided between the gate electrode and the semiconductor layer. The gate insulating layer is formed of an amorphous composite metal oxide insulating film including one or two or more alkaline-earth metal elements and one or two or more elements selected from a group consisting of Ga, Sc, Y, and lanthanoid except Ce.

公开(公告)号：US20170162172A1

公开(公告)日：2017-06-08

申请号：US15371500

申请日：2016-12-07

申请人： Ryoichi SAOTOME ,  Naoyuki UEDA ,  Yuki NAKAMURA ,  Yukiko ABE ,  Shinji MATSUMOTO ,  Yuji Sone ,  Sadanori ARAE ,  Minehide KUSAYANAGI

发明人： Ryoichi SAOTOME ,  Naoyuki UEDA ,  Yuki NAKAMURA ,  Yukiko ABE ,  Shinji MATSUMOTO ,  Yuji Sone ,  Sadanori ARAE ,  Minehide KUSAYANAGI

IPC分类号： G09G5/10 ,  G09G5/00 ,  H01L27/12

CPC分类号： G09G3/3225 ,  G09G5/003 ,  G09G5/10 ,  G09G2300/0426 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/3225 ,  H01L29/4908 ,  H01L29/7869

摘要： A field-effect transistor including: a gate electrode, which is configured to apply gate voltage; a source electrode and a drain electrode, which are configured to take electric current out; a semiconductor layer, which is disposed to be adjacent to the source electrode and the drain electrode; and a gate insulating layer, which is disposed between the gate electrode and the semiconductor layer, wherein the gate insulating layer includes a first gate insulating layer containing a first oxide containing Si and an alkaline earth metal and a second gate insulating layer disposed to be in contact with the first gate insulating layer and containing a paraelectric amorphous oxide containing a Group A element which is an alkaline earth metal and a Group B element which is at least one selected from the group consisting of Ga, Sc, Y, and lanthanoid.

公开(公告)号：US20140353648A1

公开(公告)日：2014-12-04

申请号：US14360791

申请日：2012-11-28

申请人： Yukiko Abe ,  Naoyuki Ueda ,  Yuki Nakamura ,  Mikiko Takada ,  Shinji Matsumoto ,  Yuji Sone ,  Ryoichi Saotome

发明人： Yukiko Abe ,  Naoyuki Ueda ,  Yuki Nakamura ,  Mikiko Takada ,  Shinji Matsumoto ,  Yuji Sone ,  Ryoichi Saotome

IPC分类号： H01L29/24 ,  H01L27/32 ,  H01L21/02 ,  H01L27/12 ,  G02F1/1368 ,  H01L29/786 ,  H01L29/861

CPC分类号： H01L29/247 ,  C01G19/00 ,  C01G30/00 ,  C01P2002/72 ,  G02F1/1368 ,  H01L21/02422 ,  H01L21/02483 ,  H01L21/02565 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02623 ,  H01L21/02628 ,  H01L21/02631 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/3244 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/861

摘要： To provide is a p-type oxide, including an oxide, wherein the oxide includes: Cu; and an element M, which is selected from p-block elements, and which can be in an equilibrium state, as being present as an ion, wherein the equilibrium state is a state in which there are both a state where all of electrons of p-orbital of an outermost shell are lost, and a state where all of electrons of an outermost shell are lost, and wherein the p-type oxide is amorphous.

摘要翻译： 提供包括氧化物的p型氧化物，其中氧化物包括：Cu; 和选自p族元素的并且可以处于平衡状态的元素M作为离子存在，其中平衡状态是其中存在p的全部电子的状态 - 最外壳的眶骨丢失，并且损失最外壳的全部电子的状态，并且其中p型氧化物是无定形的。

公开(公告)号：US20110128275A1

公开(公告)日：2011-06-02

申请号：US12737688

申请日：2009-08-13

申请人： Naoyuki Ueda ,  Yukiko Abe ,  Hiroshi Kondo ,  Yuki Nakamura ,  Yuji Sone

发明人： Naoyuki Ueda ,  Yukiko Abe ,  Hiroshi Kondo ,  Yuki Nakamura ,  Yuji Sone

IPC分类号： G06F3/038 ,  H01L33/28 ,  H01L51/52

CPC分类号： H01L29/7869 ,  G09G3/3258 ,  G09G3/3655 ,  G09G2320/043 ,  H01L27/1225 ,  H01L29/04 ,  H01L29/24 ,  H01L29/78693

摘要： A field effect transistor includes a gate electrode to which a gate voltage is applied; a source electrode and a drain electrode for obtaining a current in response to the gate voltage; an active layer provided adjacent to the source electrode and the drain electrode and formed of an oxide semiconductor including magnesium and indium as major components; and a gate insulating layer provided between the gate electrode and the active layer.

摘要翻译： 场效应晶体管包括施加栅极电压的栅电极; 源电极和漏电极，用于响应于栅极电压获得电流; 与源电极和漏电极相邻设置的有源层，由以镁和铟为主要成分的氧化物半导体构成; 以及设置在栅电极和有源层之间的栅极绝缘层。

公开(公告)号：US07940057B2

公开(公告)日：2011-05-10

申请号：US12174849

申请日：2008-07-17

申请人： Kouji Hada ,  Yuji Sone

发明人： Kouji Hada ,  Yuji Sone

IPC分类号： G01R31/02 ,  G06F15/173 ,  G06F11/30

CPC分类号： G05B19/0425 ,  G05B19/4067 ,  G05B2219/1181 ,  G05B2219/21159 ,  G05B2219/21163 ,  H04L41/0677 ,  H04L43/0817

摘要： A power discontinuity occurring in any one of a plurality of I/O units connected to a numerical controller is detected. When the power discontinuity occurs in any one of the I/O units, the I/O unit detects the power discontinuity, and transmits the detection of the power discontinuity to an I/O unit in front of the I/O unit, at a timing different from a timing of an ordinary communication, in the form of a communication packet having a data pattern different from an ordinary data pattern. When the front I/O unit receives the communication packet, the communication packet is stored in a memory as power discontinuity detection information.

摘要翻译： 检测发生在连接到数字控制器的多个I / O单元中的任何一个中的电力中断。 当I / O单元中的任何一个发生电源中断时，I / O单元检测到电源不连续性，并将电源中断的检测发送到I / O单元前面的I / O单元， 具有与普通数据模式不同的数据模式的通信分组形式的与普通通信的定时不同的定时。 当前端I / O单元接收到通信包时，通信包被作为电源中断检测信息存储在存储器中。

公开(公告)号：US20110006299A1

公开(公告)日：2011-01-13

申请号：US12831454

申请日：2010-07-07

申请人： Yukiko Abe ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yuji Sone

发明人： Yukiko Abe ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yuji Sone

IPC分类号： H01L29/786 ,  H01L21/36

CPC分类号： H01L29/7869 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/66969

摘要： A method for fabricating a field-effect transistor having a gate electrode, a source electrode, a drain electrode, and an active layer forming a channel region, the active layer having an oxide semiconductor mainly containing magnesium and indium is disclosed. The method includes a deposition step of depositing an oxide film, a patterning step of patterning the oxide film by processes including etching to obtain the active layer, and a heat-treatment step of heat-treating the obtained active layer subsequent to the patterning step.

摘要翻译： 公开了一种制造具有栅电极，源电极，漏电极和形成沟道区的有源层的场效应晶体管的方法，所述有源层具有主要包含镁和铟的氧化物半导体。 该方法包括沉积氧化膜的沉积步骤，通过包括蚀刻的工艺对氧化物膜进行图案化以获得有源层的图案化步骤，以及在图案化步骤之后对所获得的有源层进行热处理的热处理步骤。