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公开(公告)号：US09069245B2
公开(公告)日：2015-06-30
申请号：US13091287
申请日：2011-04-21
申请人： Masaki Ohashi , Seiichiro Tachibana , Kazumi Noda , Shozo Shirai , Takeshi Kinsho , Wu-Song Huang , Dario L. Goldfarb , Wai-Kin Li , Martin Glodde
发明人： Masaki Ohashi , Seiichiro Tachibana , Kazumi Noda , Shozo Shirai , Takeshi Kinsho , Wu-Song Huang , Dario L. Goldfarb , Wai-Kin Li , Martin Glodde
CPC分类号： G03F7/0045 , G02B5/208 , G02B5/22 , G03F7/091 , G03F7/11
摘要： A composition comprising (A) a near-infrared absorbing dye of formula (1), (B) a polymer, and (C) a solvent is used to form a near-infrared absorptive layer. In formula (1), R1 and R2 are a monovalent hydrocarbon group which may contain a heteroatom, k is 0 to 5, m is 0 or 1, n is 1 or 2, Z is oxygen, sulfur or C(R′)(R″), R′ and R″ are hydrogen or a monovalent hydrocarbon group which may contain a heteroatom, and X− is an anion.
摘要翻译： 包含（A）式（1）的近红外吸收染料，（B）聚合物和（C）溶剂的组合物用于形成近红外吸收层。 式（1）中，R 1和R 2是可以含有杂原子的一价烃基，k为0〜5，m为0或1，n为1或2，Z为氧，硫或C（R'）（ R“），R'和R”是氢或可以含有杂原子的一价烃基，X-是阴离子。
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2.发明申请公开(公告)号：US20110262863A1
公开(公告)日：2011-10-27
申请号：US13091290
申请日：2011-04-21
申请人： Seiichiro TACHIBANA , Masaki Ohashi , Kazumi Noda , Shozo Shirai , Takeshi Kinsho , Wu-Song Huang , Dario L. Goldfarb , Wai-Kin Li , Martin Glodde
发明人： Seiichiro TACHIBANA , Masaki Ohashi , Kazumi Noda , Shozo Shirai , Takeshi Kinsho , Wu-Song Huang , Dario L. Goldfarb , Wai-Kin Li , Martin Glodde
CPC分类号： G03F7/091
摘要： A near-infrared absorptive layer is formed from a composition comprising (A) an acenaphthylene polymer, (B) a near-infrared absorbing dye, and (C) a solvent. When a multilayer film comprising the near-infrared absorptive layer and a photoresist layer is used in optical lithography, the detection accuracy of optical auto-focusing is improved, allowing the optical lithography to produce a definite projection image with an improved contrast and succeeding in forming a better photoresist pattern.
摘要翻译： 由（A）苊烯聚合物，（B）近红外吸收染料和（C）溶剂组成的组合物形成近红外吸收层。 当在光学光刻中使用包含近红外吸收层和光致抗蚀剂层的多层膜时，光学自动聚焦的检测精度得到改善，允许光学光刻产生具有改善的对比度并成功地形成的确定的投影图像 更好的光刻胶图案。
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公开(公告)号：US20110262862A1
公开(公告)日：2011-10-27
申请号：US13091287
申请日：2011-04-21
申请人： Masaki OHASHI , Seiichiro Tachibana , Kazumi Noda , Shozo Shirai , Takeshi Kinsho , Wu-Song Huang , Dario L. Goldfarb , Wai-Kin Li , Martin Glodde
发明人： Masaki OHASHI , Seiichiro Tachibana , Kazumi Noda , Shozo Shirai , Takeshi Kinsho , Wu-Song Huang , Dario L. Goldfarb , Wai-Kin Li , Martin Glodde
CPC分类号： G03F7/0045 , G02B5/208 , G02B5/22 , G03F7/091 , G03F7/11
摘要： A composition comprising (A) a near-infrared absorbing dye of formula (1), (B) a polymer, and (C) a solvent is used to form a near-infrared absorptive layer. In formula (1), R1 and R2 are a monovalent hydrocarbon group which may contain a heteroatom, k is 0 to 5, m is 0 or 1, n is 1 or 2, Z is oxygen, sulfur or C(R′)(R″), R′ and R″ are hydrogen or a monovalent hydrocarbon group which may contain a heteroatom, and X− is an anion.
摘要翻译： 包含（A）式（1）的近红外吸收染料，（B）聚合物和（C）溶剂的组合物用于形成近红外吸收层。 式（1）中，R 1和R 2是可以含有杂原子的一价烃基，k为0〜5，m为0或1，n为1或2，Z为氧，硫或C（R'）（ R“），R'和R”是氢或可以含有杂原子的一价烃基，X-是阴离子。
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公开(公告)号：US08858814B2
公开(公告)日：2014-10-14
申请号：US12732637
申请日：2010-03-26
申请人： Satoshi Watanabe , Hideo Kaneko , Ryuji Koitabashi , Shinichi Igarashi , Yoshio Kawai , Shozo Shirai
发明人： Satoshi Watanabe , Hideo Kaneko , Ryuji Koitabashi , Shinichi Igarashi , Yoshio Kawai , Shozo Shirai
摘要： A photomask blank is provided comprising a transparent substrate, a single or multi-layer film including an outermost layer composed of chromium base material, and an etching mask film. The etching mask film is a silicon oxide base material film formed of a composition comprising a hydrolytic condensate of a hydrolyzable silane, a crosslink promoter, and an organic solvent and having a thickness of 1-10 nm. The etching mask film has high resistance to chlorine dry etching, ensuring high-accuracy processing of the photomask blank.
摘要翻译： 提供一种光掩模坯料，其包括透明基板，包括由铬基材料构成的最外层的单层或多层膜和蚀刻掩模膜。 蚀刻掩模膜是由包含可水解硅烷，交联促进剂和有机溶剂的水解缩合物并且具有1-10nm厚度的组合物形成的氧化硅基底膜。 蚀刻掩模膜具有高耐氯干蚀刻性，确保光掩模坯料的高精度加工。
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公开(公告)号：US20100147334A1
公开(公告)日：2010-06-17
申请号：US12591115
申请日：2009-11-09
申请人： Tsutomu Ogihara , Takafumi Ueda , Toshiharu Yano , Shozo Shirai
发明人： Tsutomu Ogihara , Takafumi Ueda , Toshiharu Yano , Shozo Shirai
IPC分类号： B08B3/00
CPC分类号： G03F7/423 , G03F7/0752 , G03F7/11 , G03F7/425
摘要： There is disclosed a coated-type silicon-containing film stripping process for stripping off to remove a coated-type silicon-containing film obtained by coating a silicon-containing film composition used in a lithography on a substrate, comprising, at least: a first step of treating the silicon-containing film with an acidic stripping solution containing sulphate ion and/or fluoride ion; and a second step of treating the silicon-containing film with an alkaline stripping solution containing a nitrogen compound. There can be provided a process for allowing a silicon-containing film, which has not been conventionally removed unless dry stripping is adopted, to be removed by a stripping process based on a stripping solution (wet stripping).
摘要翻译： 公开了一种涂覆型含硅膜剥离工艺，用于剥离以除去通过在基板上涂布用于光刻的含硅膜组合物而获得的涂覆型含硅膜，该涂层型含硅膜至少包括：第一 用含有硫酸根离子和/或氟离子的酸性汽提溶液处理含硅膜的步骤; 以及用含有氮化合物的碱性汽提溶液处理含硅膜的第二步骤。 可以提供一种方法，用于允许除去干法汽提之前没有常规去除的含硅膜通过基于剥离溶液（湿剥离）的汽提方法除去。
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公开(公告)号：US09752255B2
公开(公告)日：2017-09-05
申请号：US13159074
申请日：2011-06-13
申请人： Hitoshi Noguchi , Shozo Shirai
发明人： Hitoshi Noguchi , Shozo Shirai
CPC分类号： C30B29/04 , C30B25/183 , Y10T428/263 , Y10T428/266 , Y10T428/30
摘要： A single-crystal diamond growth base material on which single-crystal diamond is grown having at least a base substrate of a material having a linear expansion coefficient smaller than that of MgO and not smaller than 0.5×10−6/K; a single-crystal MgO layer formed on a face of the base substrate where the single-crystal diamond is grown by a bonding method; and a film constituted of any one of an iridium film, a rhodium film, and a platinum film heteroepitaxially grown on the single-crystal MgO layer.
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公开(公告)号：US08652267B2
公开(公告)日：2014-02-18
申请号：US12591115
申请日：2009-11-09
申请人： Tsutomu Ogihara , Takafumi Ueda , Toshiharu Yano , Shozo Shirai
发明人： Tsutomu Ogihara , Takafumi Ueda , Toshiharu Yano , Shozo Shirai
IPC分类号： B08B3/00
CPC分类号： G03F7/423 , G03F7/0752 , G03F7/11 , G03F7/425
摘要： There is disclosed a coated-type silicon-containing film stripping process for stripping off to remove a coated-type silicon-containing film obtained by coating a silicon-containing film composition used in a lithography on a substrate, comprising, at least: a first step of treating the silicon-containing film with an acidic stripping solution containing sulphate ion and/or fluoride ion; and a second step of treating the silicon-containing film with an alkaline stripping solution containing a nitrogen compound. There can be provided a process for allowing a silicon-containing film, which has not been conventionally removed unless dry stripping is adopted, to be removed by a stripping process based on a stripping solution (wet stripping).
摘要翻译： 公开了一种涂覆型含硅膜剥离工艺，用于剥离以除去通过在基板上涂布用于光刻的含硅膜组合物而获得的涂覆型含硅膜，该涂覆型含硅膜至少包括：第一 用含有硫酸根离子和/或氟离子的酸性汽提溶液处理含硅膜的步骤; 以及用含有氮化合物的碱性汽提溶液处理含硅膜的第二步骤。 可以提供一种方法，用于允许除去干法汽提之前没有常规去除的含硅膜通过基于剥离溶液（湿剥离）的汽提方法除去。
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公开(公告)号：US20100248493A1
公开(公告)日：2010-09-30
申请号：US12732637
申请日：2010-03-26
IPC分类号： H01L21/308 , G03F1/00
摘要： A photomask blank is provided comprising a transparent substrate, a single or multi-layer film including an outermost layer composed of chromium base material, and an etching mask film. The etching mask film is a silicon oxide base material film formed of a composition comprising a hydrolytic condensate of a hydrolyzable silane, a crosslink promoter, and an organic solvent and having a thickness of 1-10 nm. The etching mask film has high resistance to chlorine dry etching, ensuring high-accuracy processing of the photomask blank.
摘要翻译： 提供一种光掩模坯料，其包括透明基板，包括由铬基材料构成的最外层的单层或多层膜和蚀刻掩模膜。 蚀刻掩模膜是由包含可水解硅烷，交联促进剂和有机溶剂的水解缩合物并且具有1-10nm厚度的组合物形成的氧化硅基底膜。 蚀刻掩模膜具有高耐氯干蚀刻性，确保光掩模坯料的高精度加工。
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