公开(公告)号：US08130593B2

公开(公告)日：2012-03-06

申请号：US12521120

申请日：2007-12-17

Applicant: Masato Hayashi ,  Masami Yakabe ,  Nobuyoshi Koshida

Inventor： Masato Hayashi ,  Masami Yakabe ,  Nobuyoshi Koshida

IPC: B06B1/06 ,  G10K15/04

CPC classification number: G10K15/04

Abstract: A pressure wave generator (1) includes a thermally conductive substrate (2), a heat insulating layer (3) formed on one main surface of the substrate (2), an insulator layer (5) formed on the heat insulating layer (3), and a heat generator (4) formed on the insulator layer (5) to generate heat when a current containing an alternating component is applied thereto. The heat insulating layer (3) is formed containing at least one of silicon nitride (Si3N4), silicon dioxide (SiO2), aluminum oxide (Al2O3), magnesium oxide (MgO), diamond crystalline carbon (C), aluminum nitride (AlN), and silicon carbide (SiC). The heat generator (4) is formed containing, for example, gold (Au) or tungsten (W).

Abstract translation: 压力波发生器（1）包括导热基板（2），形成在基板（2）的一个主表面上的绝热层（3），形成在绝热层（3）上的绝缘体层（5） 以及形成在所述绝缘体层（5）上的热发生器（4），以在施加包含交替分量的电流时产生热量。 该绝热层（3）形成为含有氮化硅（Si 3 N 4），二氧化硅（SiO 2），氧化铝（Al 2 O 3），氧化镁（MgO），金刚石结晶碳（C），氮化铝（AlN） ，和碳化硅（SiC）。 形成有例如金（Au）或钨（W）的发热体（4）。

公开(公告)号：US07891090B2

公开(公告)日：2011-02-22

申请号：US11884075

申请日：2006-02-09

Applicant: Masami Yakabe ,  Tomohisa Hoshino

Inventor： Masami Yakabe ,  Tomohisa Hoshino

IPC: H01R9/00 ,  H05K3/00

CPC classification number: G01R3/00 ,  G01R1/07378 ,  H01R12/714 ,  H01R13/2464 ,  Y10T29/49147 ,  Y10T29/49165 ,  Y10T29/49204 ,  Y10T29/49609

Abstract: A method for manufacturing an interposer including a body and a plurality of probes connected to said body is disclosed. The method includes a step of manufacturing said body including the sub-steps of preparing a first substrate having one surface side and the other surface side and being capable of being processed by dry etching, forming a plurality of through holes in said first substrate by dry etching, and making said through holes into conductive holes capable of conducting electricity through a bottom-up fill process. The method also includes a step of manufacturing said plurality of probes and connecting the ends of said plurality of conductive holes on one surface side of said first substrate and a plurality of first probes on said second substrate.

Abstract translation: 公开了一种用于制造包括主体和连接到所述主体的多个探针的插入件的方法。 该方法包括制造所述主体的步骤，其包括准备具有一个表面侧和另一个表面侧的第一基板的子步骤，并且能够通过干蚀刻加工，在所述第一基板中通过干燥形成多个通孔 蚀刻，并使所述通孔成为能够通过自底向上填充工艺导电的导电孔。 该方法还包括制造所述多个探针并将所述多个导电孔的端部连接在所述第一基底的一个表面侧上的步骤和在所述第二基底上的多个第一探针。

公开(公告)号：US20090039908A1

公开(公告)日：2009-02-12

申请号：US12282744

申请日：2006-04-12

Applicant: Naoki Ikeuchi ,  Masami Yakabe ,  Akiko Kamigori

Inventor： Naoki Ikeuchi ,  Masami Yakabe ,  Akiko Kamigori

IPC: G01R31/02

CPC classification number: G01P21/00 ,  B81C99/005 ,  G01P15/123 ,  G01P15/18 ,  G01P2015/0842 ,  G01R31/2829

Abstract: A microstructure inspecting apparatus for evaluating a characteristic of at least one microstructure having a movable section formed on a substrate, includes: a probe, which electrically connects with pads formed on the microstructure, for obtaining an electric signal of the microstructure; a plurality of nozzles, positioned in the vicinity of the movable section of the microstructure, for discharging or sucking a gas; a nozzle flow rate controller for controlling a flow rate of the gas discharged from or sucked into the plurality of nozzles; and an evaluation unit for detecting a displacement of the movable section of the microstructure by using the electric signal obtained through the probe, wherein the displacement is made by the gas discharged from or sucked into the plurality of nozzles, and evaluating the characteristic of the microstructure based on the detected result.

Abstract translation: 一种用于评价具有形成在基板上的可移动部分的至少一个微结构的特性的微结构检查装置，包括：与形成在微结构体上的焊盘电连接的探针，用于获得微结构的电信号; 多个喷嘴，位于微细结构的可移动部分附近，用于排出或吸入气体; 喷嘴流量控制器，用于控制从所述多个喷嘴排出或吸入所述多个喷嘴的气体的流量; 以及评估单元，用于通过使用通过探针获得的电信号来检测微结构的可移动部分的位移，其中通过从多个喷嘴排出或吸入多个喷嘴的气体进行位移，并评估微观结构的特性 基于检测结果。

公开(公告)号：US20080190206A1

公开(公告)日：2008-08-14

申请号：US11885432

申请日：2006-03-02

Applicant: Toshiyuki Matsumoto ,  Naoki Ikeuchi ,  Masami Yakabe ,  Keiichi Enjoji ,  Masato Hayashi

Inventor： Toshiyuki Matsumoto ,  Naoki Ikeuchi ,  Masami Yakabe ,  Keiichi Enjoji ,  Masato Hayashi

IPC: G01N29/00

CPC classification number: G01P15/18 ,  B81B2201/0257 ,  B81C99/005 ,  G01C19/56 ,  G01C25/005 ,  G01N29/043 ,  G01N2291/02881 ,  G01N2291/0421 ,  G01N2291/044 ,  G01N2291/102 ,  G01N2291/2698 ,  G01P15/123 ,  G01P21/00 ,  G01P2015/084 ,  G01P2015/0842

Abstract: A speaker unit has a plurality of sound sources each outputting a sound wave. The compressional, sound wave output from the speaker unit arrives, or vibrates air, which moves a movable part of a three-axis acceleration sensor, or a microstructure of a chip to be tested TP. As the movable part thus moves, a value in resistance accordingly varies, and such variation is measured as based on an output voltage provided via a probe. A control unit determines a property of the three-axis acceleration sensor from a value in property as measured or measurement data. Furthermore, the plurality of sound sources can be spaced by a pitch of a predetermined value set as based on their difference in the distance to the movable part of the three-axis acceleration sensor and the wavelength of the test wave to apply a composite test wave to the movable part such that the composite sound wave's composite sound field is maximized.

Abstract translation: 扬声器单元具有多个声源，每个声源都输出声波。 来自扬声器单元的压缩声波输出到达或振动空气，其移动三轴加速度传感器的可移动部分或待测试芯片的微结构TP。 随着可移动部分的移动，电阻值相应地变化，并且基于经由探针提供的输出电压来测量这种变化。 控制单元根据所测量的属性值或测量数据确定三轴加速度传感器的特性。 此外，多个声源可以以基于其与三轴加速度传感器的可移动部分的距离和测试波的波长的差设置的预定值的间距间隔开，以应用复合测试波 到可动部分，使得复合声波的复合声场最大化。

公开(公告)号：US20050040833A1

公开(公告)日：2005-02-24

申请号：US10488764

申请日：2002-09-06

Applicant: Masami Yakabe ,  Naoki Ikeuchi

Inventor： Masami Yakabe ,  Naoki Ikeuchi

IPC: G01N27/22 ,  G01R27/26 ,  H04R19/04 ,  H04R29/00

CPC classification number: H04R29/004 ,  G01N27/22 ,  H04R19/04

Abstract: An electrostatic capacitance detection circuit 10 comprises an AC voltage generator 11, a first operational amplifier 14 of which non-inverting input terminal is connected to specific potential (a ground in this example), a second operational amplifier 16 that includes a voltage follower, a resistance (R1) 12 connected between the AC voltage generator 11 and an inverting input terminal of the first operational amplifier 14, a resistance (R2) 13 connected between the inverting input terminal of the first operational amplifier 14 and an output terminal of the second operational amplifier 16, and an impedance element (a capacitor) 15 connected between an output terminal of the first operational amplifier 14 and a non-inverting input terminal of the second operational amplifier 16, and a capacitor to be detected 17 is connected between the non-inverting input terminal of the second operational amplifier 16 and specific potential. The electrostatic capacitance detection circuit 10 and the capacitor 17 are located adjacently.

Abstract translation: 静电电容检测电路10包括交流电压发生器11，其非反相输入端连接到特定电位的第一运算放大器14（在该示例中为地），第二运算放大器16，其包括电压跟随器， 连接在交流电压发生器11和第一运算放大器14的反相输入端之间的电阻（R1）12，连接在第一运算放大器14的反相输入端和第二运算放大器14的输出端之间的电阻（R2） 连接在第一运算放大器14的输出端和第二运算放大器16的非反相输入端之间的阻抗元件（电容器）15和待检测电容器17连接在非易失性存储器16之间。 第二运算放大器16的反相输入端和特定电位。 静电电容检测电路10和电容器17相邻配置。

公开(公告)号：US20050036271A1

公开(公告)日：2005-02-17

申请号：US10488598

申请日：2002-09-06

Applicant: Masami Yakabe

Inventor： Masami Yakabe

IPC: G01D5/24 ,  G01N27/22 ,  G01R27/26 ,  H04R3/00 ,  H01G4/38

CPC classification number: G01R27/2605 ,  G01D5/24 ,  G01N27/228 ,  H04R3/007

Abstract: A capacitor C and an impedance converter Hiz are included in a feedback circuit of the first operational amplifier OP1 in series; an electrode P1 of a capacitive sensor is connected to a connection point of the said capacitor and the converter via a signal line L. The signal line L is connected to a predetermined standard electric potential through resistance R3 whose resistance value is high. When the capacitor is included in the feedback circuit, the signal line becomes in a state of floating and a circuit operation becomes unstable, however, the signal line L is fixed at predetermined electric potential, and therefore, the operation becomes stable. It is acceptable to configure the impedance converter with a voltage follower and connect the resistance R3 to the output.

Abstract translation: 在第一运算放大器OP1的反馈电路中串联包括电容器C和阻抗转换器Hiz; 电容式传感器的电极P1通过信号线L连接到所述电容器和转换器的连接点。信号线L通过电阻值高的电阻R3连接到预定的标准电位。 当电容器包括在反馈电路中时，信号线变为浮置状态，电路操作变得不稳定，然而，信号线L被固定在预定电位，因此操作变得稳定。 将阻抗转换器配置为电压跟随器并将电阻R3连接到输出是可以接受的。

公开(公告)号：US20120085655A1

公开(公告)日：2012-04-12

申请号：US13328710

申请日：2011-12-16

Applicant: Kenichi Kagawa ,  Tomohisa Hoshino ,  Masami Yakabe

Inventor： Kenichi Kagawa ,  Tomohisa Hoshino ,  Masami Yakabe

IPC: C25D5/02 ,  B05D5/12

CPC classification number: H01L23/49827 ,  H01L21/486 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In a manufacturing method for an interposer, a seed layer is formed at an opening portion in a through hole on back surface side of a substrate, an electrode layer for electroplated coating is formed based on the seed layer, and an electroplated coating layer is formed to fill the through hole from the electrode layer for electroplated coating layer to a front surface side. As a result, a manufacturing method for an interposer is provided in which the manufacturing process is simple and the void is not generated inside of the through hole.

Abstract translation: 在中介层的制造方法中，在基板的背面侧的通孔的开口部形成种子层，基于种子层形成电镀用电极层，形成电镀覆盖层 以将电镀层用电极层的贯通孔填充到前表面侧。 结果，提供了一种用于插入器的制造方法，其中制造工艺简单并且在通孔内部不产生空隙。

公开(公告)号：US07866038B2

公开(公告)日：2011-01-11

申请号：US11631638

申请日：2005-07-05

Applicant: Masami Yakabe ,  Kenichi Kagawa ,  Tomohisa Hoshino

Inventor： Masami Yakabe ,  Kenichi Kagawa ,  Tomohisa Hoshino

IPC: H01K3/10

CPC classification number: H01L21/486 ,  H01L21/76898 ,  H01L23/147 ,  H01L23/481 ,  H01L23/49827 ,  H01L23/552 ,  H01L2223/6622 ,  H01L2924/0002 ,  H05K1/0222 ,  H05K1/0306 ,  H05K3/423 ,  H05K2201/09809 ,  H05K2203/0733 ,  Y10T29/49165 ,  H01L2924/00

Abstract: A through substrate which comprises a silicon substrate (10) having a through hole (19) penetrating a front surface (11) and a back surface (12), a oxidized silicon film (13) being provided along the inner wall surface of the through hole (19), layers (14, 15) comprising Zn and Cu, respectively, being formed on the inner wall surface of the oxidized silicon film (13), and a Cu plating layer (18) which has been grown from a Cu seed layer (17) along the inner wall surface of layers (14, 15) comprising Zn and Cu, respectively, via an insulating layer (16) between them. The above through substrate can provide a through electrode capable of avoiding the noise due to the cross talk.

Abstract translation: 一种贯穿基板，包括具有贯通前表面（11）和后表面（12）的通孔（19）的硅基板（10），沿着贯通孔的内壁表面设置的氧化硅膜（13） 分别形成在氧化硅膜（13）的内壁面上的包含Zn和Cu的层（14,15），以及从Cu种子生长的Cu镀层（18） 层（17）分别经由它们之间的绝缘层（16）沿着包括Zn和Cu的层（14,15）的内壁表面。 上述通过基板可以提供能够避免由于串扰引起的噪声的通孔电极。

公开(公告)号：US20080302185A1

公开(公告)日：2008-12-11

申请号：US11662478

申请日：2005-09-09

Applicant: Masami Yakabe ,  Toshiyuki Matsumoto ,  Naoki Ikeuchi ,  Katsuya Okumura

Inventor： Masami Yakabe ,  Toshiyuki Matsumoto ,  Naoki Ikeuchi ,  Katsuya Okumura

IPC: G01H1/00

CPC classification number: G01N29/14 ,  B81C99/005 ,  G01N29/4427 ,  G01N2291/2695 ,  G01N2291/2697

Abstract: Voltage is applied to a chip TP by a voltage drive unit 30 through a probe needle P to move a movable part of a microstructure. A sound produced in response to motion of the movable part of the microstructure is detected by a microphone 3. Then, the sound detected by the microphone 3 is measured by a measurement unit 25. The control unit 20 evaluates the characteristics of the tested chip TP by comparing with a sound detected from an ideal chip TP.

Abstract translation: 通过电压驱动单元30通过探针P将电压施加到芯片TP，以移动微结构的可移动部分。 通过麦克风3检测响应于微结构的可动部分的运动而产生的声音。然后，由测量单元25测量由麦克风3检测到的声音。控制单元20评估测试芯片TP的特性 通过与从理想芯片TP检测到的声音进行比较。

公开(公告)号：US20080171452A1

公开(公告)日：2008-07-17

申请号：US11884075

申请日：2006-02-09

Applicant: Masami Yakabe ,  Tomohisa Hoshino

Inventor： Masami Yakabe ,  Tomohisa Hoshino

IPC: G01R31/02 ,  H01R12/00 ,  H01R43/16

CPC classification number: G01R3/00 ,  G01R1/07378 ,  H01R12/714 ,  H01R13/2464 ,  Y10T29/49147 ,  Y10T29/49165 ,  Y10T29/49204 ,  Y10T29/49609

Abstract: Disclosed is an interposer comprising a silicon substrate (20). A plurality of conductive holes (27) penetrating the silicon substrate (20) are formed by dry etching, and at least one end of each conductive hole (27) is provided with a probe (12) via a pad (45). Since conductive holes are formed in a substrate that can be processed by dry etching, a plurality of microscopic conductive holes can be continuously formed and a probe can be connected to each conductive hole. Consequently, there can be obtained an interposer wherein probes are arranged at high density.

Abstract translation: 公开了一种包括硅衬底（20）的插入器。 通过干蚀刻形成穿过硅衬底（20）的多个导电孔（27），并且每个导电孔（27）的至少一端经由衬垫（45）设置有探针（12）。 由于在可以通过干蚀刻加工的基板中形成导电孔，所以可以连续地形成多个微小的导电孔，并且可以将探头连接到每个导电孔。 因此，可以获得其中探针以高密度排列的插入物。