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公开(公告)号：US20120174945A1
公开(公告)日：2012-07-12
申请号：US13348268
申请日：2012-01-11
申请人： Takashi Saio , Soichi Kumon , Masanori Saito , Shinobu Arata , Hidehisa Nanai , Yoshinori Akamatsu
发明人： Takashi Saio , Soichi Kumon , Masanori Saito , Shinobu Arata , Hidehisa Nanai , Yoshinori Akamatsu
CPC分类号： H01L21/02068 , C11D11/0047
摘要： Disclosed is a liquid chemical for forming a water-repellent protecting film. The liquid chemical contains an agent for forming a water-repellent protecting film, and a solvent. The agent is for provided to form a water-repellent protecting film on a wafer after a cleaning step for the wafer and before a drying step for the wafer, the wafer having at its surface an uneven pattern and containing at least one kind element of titanium, tungsten, aluminum, copper, tin, tantalum and ruthenium at surfaces of recessed portions of the uneven pattern, the water-repellent protecting film being formed at least on the surfaces of the recessed portions. The liquid chemical is characterized in that the agent for forming a water-repellent protecting film is a compound represented by the following general formula [1].
摘要翻译： 公开了一种用于形成防水保护膜的液体化学品。 液体化学品含有形成防水保护膜的试剂和溶剂。 该试剂用于在晶片的清洁步骤之后并且在用于晶片的干燥步骤之前在晶片上形成防水保护膜，所述晶片在其表面处具有不均匀图案并且包含至少一种钛元素 ，钨，铝，铜，锡，钽和钌在凹凸图案的凹部的表面处，至少在凹部的表面上形成防水保护膜。 液体化学品的特征在于用于形成防水保护膜的试剂是由以下通式[1]表示的化合物。
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公开(公告)号：US09478407B2
公开(公告)日：2016-10-25
申请号：US12912360
申请日：2010-10-26
申请人： Masanori Saito , Shinobu Arata , Takashi Saio , Soichi Kumon , Hidehisa Nanai , Yoshinori Akamatsu
发明人： Masanori Saito , Shinobu Arata , Takashi Saio , Soichi Kumon , Hidehisa Nanai , Yoshinori Akamatsu
IPC分类号： B08B3/08 , H01L21/02 , H01L21/027 , C11D1/00 , C11D1/04 , C11D1/40 , C11D11/00 , H01L21/306
CPC分类号： H01L21/02068 , C11D1/002 , C11D1/004 , C11D1/04 , C11D1/40 , C11D11/0047 , H01L21/02057 , H01L21/0212 , H01L21/027 , H01L21/306 , H01L21/31127
摘要： Disclosed is a liquid chemical for forming a water-repellent protecting film on a wafer. The liquid chemical is a liquid chemical containing a water-repellent-protecting-film-forming agent for forming the water-repellent protecting film, at the time of cleaning the wafer which has a finely uneven pattern at its surface and contains at least at a part of a surface of a recessed portion of the uneven pattern at least one kind of matter selected from the group consisting of titanium, titanium nitride, tungsten, aluminum, copper, tin, tantalum nitride, ruthenium and silicon, at least on the surface of the recessed portion. The liquid chemical is characterized in that the water-repellent-protecting-film-forming agent is a water-insoluble surfactant. The water-repellent protecting film formed with the liquid chemical is capable of preventing a pattern collapse of the wafer, in a cleaning step.
摘要翻译： 公开了一种用于在晶片上形成防水保护膜的液体化学品。 液体化学品是含有防水保护膜形成剂的液体化学品，用于形成防水保护膜，在清洁其表面上具有精细不均匀图案的晶片时，至少含有 至少一种选自钛，氮化钛，钨，铝，铜，锡，氮化钽，钌和硅的至少一种物质的不平坦图案的凹陷部分的表面的一部分，至少在 凹部。 液体化学品的特征在于防水保护膜形成剂是水不溶性表面活性剂。 在清洁步骤中，用液体化学品形成的防水保护膜能够防止晶片的图案塌陷。
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公开(公告)号：US20130056023A1
公开(公告)日：2013-03-07
申请号：US13698244
申请日：2011-05-11
申请人： Soichi Kumon , Takashi Saio , Shinobu Arata , Masanori Saito , Atsushi Ryokawa , Shuhei Yamada , Hidehisa Nanai , Yoshinori Akamatsu
发明人： Soichi Kumon , Takashi Saio , Shinobu Arata , Masanori Saito , Atsushi Ryokawa , Shuhei Yamada , Hidehisa Nanai , Yoshinori Akamatsu
CPC分类号： H01L21/02057 , C09D183/08 , H01L21/0206 , H01L21/302 , H01L21/3105
摘要： Disclosed is a liquid chemical for forming a water repellent protective film on a wafer that has at its surface a finely uneven pattern and contains silicon element at least at a part of the uneven pattern, the water repellent protective film being formed at least on surfaces of recessed portions of the uneven pattern at the time of cleaning the wafer. The liquid chemical contains: a silicon compound (A) represented by the general formula R1aSi(H)b(X)4−a−b and an acid; or a silicon compound (C) represented by the general formula R7gSi(H)h(CH3)w(Z)4−g−h−w and a base that contains no more than 35 mass % of water. The total amount of water in the liquid chemical is no greater than 1000 mass ppm relative to the total amount of the liquid chemical. The liquid chemical can improve a cleaning step that easily induces pattern collapse.
摘要翻译： 公开了一种用于在晶片上形成疏水性保护膜的液体化学品，其表面具有精细不均匀的图案，并且至少在不均匀图案的一部分处含有硅元素，所述防水保护膜至少形成在 在清洁晶片时凹凸图案的凹陷部分。 液体化学品包含：由通式R 1a a（H）b（X）4-a-b表示的硅化合物（A）和酸; 或由通式R7gSi（H）h（CH3）w（Z）4-g-h-w表示的硅化合物（C）和含有不超过35质量％的水的碱。 液体化学品中的水的总量相对于液体化学品的总量不超过1000质量ppm。 液体化学品可以改善易于引起图案塌陷的清洁步骤。
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公开(公告)号：US20110162680A1
公开(公告)日：2011-07-07
申请号：US12912360
申请日：2010-10-26
申请人： Masanori SAITO , Shinobu Arata , Takashi Saio , Soichi Kumon , Hidehisa Nanai , Yoshinori Akamatsu
发明人： Masanori SAITO , Shinobu Arata , Takashi Saio , Soichi Kumon , Hidehisa Nanai , Yoshinori Akamatsu
IPC分类号： B08B3/00 , C07C211/03 , C09D7/12
CPC分类号： H01L21/02068 , C11D1/002 , C11D1/004 , C11D1/04 , C11D1/40 , C11D11/0047 , H01L21/02057 , H01L21/0212 , H01L21/027 , H01L21/306 , H01L21/31127
摘要： Disclosed is a liquid chemical for forming a water-repellent protecting film on a wafer. The liquid chemical is a liquid chemical containing a water-repellent-protecting-film-forming agent for forming the water-repellent protecting film, at the time of cleaning the wafer which has a finely uneven pattern at its surface and contains at least at a part of a surface of a recessed portion of the uneven pattern at least one kind of matter selected from the group consisting of titanium, titanium nitride, tungsten, aluminum, copper, tin, tantalum nitride, ruthenium and silicon, at least on the surface of the recessed portion. The liquid chemical is characterized in that the water-repellent-protecting-film-forming agent is a water-insoluble surfactant. The water-repellent protecting film formed with the liquid chemical is capable of preventing a pattern collapse of the wafer, in a cleaning step.
摘要翻译： 公开了一种用于在晶片上形成防水保护膜的液体化学品。 液体化学品是含有防水保护膜形成剂的液体化学品，用于形成防水保护膜，在清洁其表面上具有精细不均匀图案的晶片时，至少含有 至少一种选自钛，氮化钛，钨，铝，铜，锡，氮化钽，钌和硅的至少一种物质的不平坦图案的凹陷部分的表面的一部分，至少在 凹部。 液体化学品的特征在于防水保护膜形成剂是水不溶性表面活性剂。 在清洁步骤中，用液体化学品形成的防水保护膜能够防止晶片的图案塌陷。
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公开(公告)号：US08932390B2
公开(公告)日：2015-01-13
申请号：US13348268
申请日：2012-01-11
申请人： Takashi Saio , Soichi Kumon , Masanori Saito , Shinobu Arata , Hidehisa Nanai , Yoshinori Akamatsu
发明人： Takashi Saio , Soichi Kumon , Masanori Saito , Shinobu Arata , Hidehisa Nanai , Yoshinori Akamatsu
CPC分类号： H01L21/02068 , C11D11/0047
摘要： Disclosed is a liquid chemical for forming a water-repellent protecting film. The liquid chemical contains an agent for forming a water-repellent protecting film, and a solvent. The agent is for provided to form a water-repellent protecting film on a wafer after a cleaning step for the wafer and before a drying step for the wafer, the wafer having at its surface an uneven pattern and containing at least one kind element of titanium, tungsten, aluminum, copper, tin, tantalum and ruthenium at surfaces of recessed portions of the uneven pattern, the water-repellent protecting film being formed at least on the surfaces of the recessed portions. The liquid chemical is characterized in that the agent for forming a water-repellent protecting film is a compound represented by the following general formula [1].
摘要翻译： 公开了一种用于形成防水保护膜的液体化学品。 液体化学品含有形成防水保护膜的试剂和溶剂。 该试剂用于在晶片的清洁步骤之后并且在用于晶片的干燥步骤之前在晶片上形成防水保护膜，所述晶片在其表面处具有不均匀图案并且包含至少一种钛元素 ，钨，铝，铜，锡，钽和钌在凹凸图案的凹部的表面处，至少在凹部的表面上形成防水保护膜。 液体化学品的特征在于用于形成防水保护膜的试剂是由以下通式[1]表示的化合物。
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公开(公告)号：US08828144B2
公开(公告)日：2014-09-09
申请号：US13350007
申请日：2012-01-13
申请人： Soichi Kumon , Takashi Saio , Shinobu Arata , Masanori Saito , Hidehisa Nanai , Yoshinori Akamatsu
发明人： Soichi Kumon , Takashi Saio , Shinobu Arata , Masanori Saito , Hidehisa Nanai , Yoshinori Akamatsu
CPC分类号： H01L21/02057
摘要： A process for cleaning a wafer having an uneven pattern at its surface. The process includes at least the steps of: cleaning the wafer with a cleaning liquid; substituting the cleaning liquid retained in recessed portions of the wafer with a water-repellent liquid chemical after cleaning; and drying the wafer, wherein the cleaning liquid contains 80 mass % or greater of a solvent having a boiling point of 55 to 200° C., and wherein the water-repellent liquid chemical supplied in the substitution step has a temperature of not lower than 40° C. and lower than a boiling point of the water-repellent liquid chemical thereby imparting water repellency at least to surfaces of the recessed portions.
摘要翻译： 一种在其表面上清洁具有不均匀图案的晶片的方法。 该方法至少包括以下步骤：用清洗液清洗晶片; 在清洁后用拒水液体化学品代替保留在晶片的凹陷部分中的清洁液体; 干燥晶片，其中，所述清洗液含有80质量％以上的沸点为55〜200℃的溶剂，其中，所述取代工序中供给的所述憎水性液体化学物质的温度不低于 40℃以下，并且低于防水液体化学品的沸点，从而至少对凹部的表面赋予防水性。
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公开(公告)号：US09691603B2
公开(公告)日：2017-06-27
申请号：US13698244
申请日：2011-05-11
申请人： Soichi Kumon , Takashi Saio , Shinobu Arata , Masanori Saito , Atsushi Ryokawa , Shuhei Yamada , Hidehisa Nanai , Yoshinori Akamatsu
发明人： Soichi Kumon , Takashi Saio , Shinobu Arata , Masanori Saito , Atsushi Ryokawa , Shuhei Yamada , Hidehisa Nanai , Yoshinori Akamatsu
IPC分类号： H01L21/302 , H01L21/02 , H01L21/3105 , C09D183/08
CPC分类号： H01L21/02057 , C09D183/08 , H01L21/0206 , H01L21/302 , H01L21/3105
摘要： Disclosed is a liquid chemical for forming a water repellent protective film on a wafer that has at its surface a finely uneven pattern and contains silicon element at least at a part of the uneven pattern, the water repellent protective film being formed at least on surfaces of recessed portions of the uneven pattern at the time of cleaning the wafer. The liquid chemical contains: a silicon compound (A) represented by the general formula R1aSi(H)b(X)4−a−b and an acid; or a silicon compound (C) represented by the general formula R7gSi(H)h(CH3)w(Z)4−g−h−w and a base that contains no more than 35 mass % of water. The total amount of water in the liquid chemical is no greater than 1000 mass ppm relative to the total amount of the liquid chemical. The liquid chemical can improve a cleaning step that easily induces pattern collapse.
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公开(公告)号：US09228120B2
公开(公告)日：2016-01-05
申请号：US13253127
申请日：2011-10-05
申请人： Soichi Kumon , Takashi Saio , Shinobu Arata , Masanori Saito , Atsushi Ryokawa , Shuhei Yamada , Hidehisa Nanai , Yoshinori Akamatsu
发明人： Soichi Kumon , Takashi Saio , Shinobu Arata , Masanori Saito , Atsushi Ryokawa , Shuhei Yamada , Hidehisa Nanai , Yoshinori Akamatsu
CPC分类号： H01L21/02057 , B08B3/08 , B08B3/10 , C09K3/18 , C11D1/82 , C11D3/162 , C11D11/0047 , H01L21/02082
摘要： Disclosed is a liquid chemical for forming a water-repellent protecting film at least on a surface of a recessed portion of an uneven pattern at the time of cleaning a wafer having a finely uneven pattern at its surface and containing silicon at least a part of the uneven pattern. This liquid chemical contains a silicon compound A represented by the general formula: R1aSi(H)bX4-a-b and an acid A, the acid A being at least one selected from the group consisting of trimethylsilyl trifluoroactate, trimethylsilyl trifluoromethanesulfonate, dimethylsilyl trifluoroactate, dimethylsilyl trifluoromethanesulfonate, butyldimethylsilyl trifluoroactate, butyldimethylsilyl trifluoromethanesulfonate, hexyldimethylsilyl trifluoroacetate, hexyldimethylsilyl trifluoromethanesulfonate, octyldimethylsilyl trifluoroactate, octyldimethylsilyl trifluoromethanesulfonate, decyldimethylsilyl trifluoroacetate and decyldimethylsilyl trifluoromethanesulfonate.
摘要翻译： 公开了一种液体化学品，用于在清洁其表面上具有精细不均匀图案的晶片时至少在凹凸图案的凹部的表面上形成防水保护膜，并且含有硅的至少一部分 图案不均匀 该液体化学品含有由通式R1aSi（H）bX4-ab表示的硅化合物A和酸A，酸A为选自三甲基甲硅烷基三氟甲酸三甲基甲硅烷基酯，三氟甲磺酸三甲基甲硅烷基酯，三氟甲磺酸二甲基甲硅烷基酯，三氟甲磺酸二甲基甲硅烷基酯 丁基二甲基甲硅烷基三氟甲酸酯，丁基二甲基甲硅烷基三氟甲磺酸酯，己基二甲基甲硅烷基三氟乙酸酯，己基二甲基甲硅烷基三氟甲磺酸酯，辛基二甲基甲硅烷基三氟甲酸酯，辛基二甲基甲硅烷基三氟甲磺酸酯，癸基二甲基甲硅烷基三氟乙酸酯和癸基二甲基甲硅烷基三氟甲磺酸酯。
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公开(公告)号：US20120017934A1
公开(公告)日：2012-01-26
申请号：US13253127
申请日：2011-10-05
申请人： Soichi KUMON , Takashi Saio , Shinobu Arata , Masanori Saito , Atsushi Ryokawa , Shuhei Yamada , Hidehisa Nanai , Yoshinori Akamatsu
发明人： Soichi KUMON , Takashi Saio , Shinobu Arata , Masanori Saito , Atsushi Ryokawa , Shuhei Yamada , Hidehisa Nanai , Yoshinori Akamatsu
CPC分类号： H01L21/02057 , B08B3/08 , B08B3/10 , C09K3/18 , C11D1/82 , C11D3/162 , C11D11/0047 , H01L21/02082
摘要： Disclosed is a liquid chemical for forming a water-repellent protecting film at least on a surface of a recessed portion of an uneven pattern at the time of cleaning a wafer having a finely uneven pattern at its surface and containing silicon at least a part of the uneven pattern. This liquid chemical contains a silicon compound A represented by the general formula: R1aSi(H)bX4-a-b and an acid A, the acid A being at least one selected from the group consisting of trimethylsilyl trifluoroactate, trimethylsilyl trifluoromethanesulfonate, dimethylsilyl trifluoroactate, dimethylsilyl trifluoromethanesulfonate, butyldimethylsilyl trifluoroactate, butyldimethylsilyl trifluoromethanesulfonate, hexyldimethylsilyl trifluoroacetate, hexyldimethylsilyl trifluoromethanesulfonate, octyldimethylsilyl trifluoroactate, octyldimethylsilyl trifluoromethanesulfonate, decyldimethylsilyl trifluoroacetate and decyldimethylsilyl trifluoromethanesulfonate.
摘要翻译： 公开了一种液体化学品，用于在清洁其表面上具有精细不均匀图案的晶片时至少在凹凸图案的凹部的表面上形成防水保护膜，并且含有硅的至少一部分 图案不均匀 该液体化学品含有由通式R1aSi（H）bX4-ab表示的硅化合物A和酸A，酸A为选自三甲基甲硅烷基三氟甲酸三甲基甲硅烷基酯，三氟甲磺酸三甲基甲硅烷基酯，三氟甲磺酸二甲基甲硅烷基酯，三氟甲磺酸二甲基甲硅烷基酯 丁基二甲基甲硅烷基三氟甲酸酯，丁基二甲基甲硅烷基三氟甲磺酸酯，己基二甲基甲硅烷基三氟乙酸酯，己基二甲基甲硅烷基三氟甲磺酸酯，辛基二甲基甲硅烷基三氟甲酸酯，辛基二甲基甲硅烷基三氟甲磺酸酯，癸基二甲基甲硅烷基三氟乙酸酯和癸基二甲基甲硅烷基三氟甲磺酸酯。
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公开(公告)号：US09053924B2
公开(公告)日：2015-06-09
申请号：US12898185
申请日：2010-10-05
申请人： Soichi Kumon , Takashi Saio , Shinobu Arata , Hidehisa Nanai , Yoshinori Akamatsu , Shigeo Hamaguchi , Kazuhiko Maeda
发明人： Soichi Kumon , Takashi Saio , Shinobu Arata , Hidehisa Nanai , Yoshinori Akamatsu , Shigeo Hamaguchi , Kazuhiko Maeda
CPC分类号： H01L21/02052 , B08B3/00 , C09D183/04 , C11D3/162 , C11D7/5022 , H01L21/00 , H01L21/02054
摘要： A cleaning agent for a silicon wafer (a first cleaning agent) contains at least a water-based cleaning liquid and a water-repellent cleaning liquid for providing at least a recessed portion of an uneven pattern with water repellency during a cleaning process. The water-based cleaning liquid is a liquid in which a water-repellent compound having a reactive moiety chemically bondable to Si element in the silicon wafer and a hydrophobic group, and an organic solvent including at least an alcoholic solvent are mixed and contained. With this cleaning agent, the cleaning process which tends to induce a pattern collapse can be improved.
摘要翻译： 一种用于硅晶片（第一清洁剂）的清洁剂至少含有一种水基清洗液和一种防水清洗液，用于在清洁过程中至少提供具有防水性的凹凸图案的凹陷部分。 水性清洗液是将具有与硅晶片中的Si元素和疏水性基团化学结合的反应性部分的防水化合物和至少含有醇溶剂的有机溶剂混合并包含的液体。 利用该清洁剂，可以提高倾向于引起图案塌陷的清洁处理。
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