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1.发明授权Temperature-measuring member, temperature-measuring device, and method for measuring temperature 有权温度测量部件，温度测量装置以及测量温度的方法公开(公告)号：US08162538B2
公开(公告)日：2012-04-24
申请号：US12216207
申请日：2008-07-01
CPC分类号： G01K3/14 , G01K11/06 , G01K2213/00
摘要： The surface density of projections formed on a thin metal film of a temperature-measuring member having the metal film having been subjected to a temperature profile is calculated with a number-calculating section according to image data fed into an arithmetic processing unit through an optical microscope, CCD camera, and I/O board. The maximum temperature of the object is determined with the temperature-calculating unit according to the surface density and data on the maximum temperature and surface density previously stored in memory. Furthermore, a temperature-measuring member constituted by a thin aluminum film arranged on a substrate is used. A reduction in the reflectivity of the film due to projections formed on the film surface according to a temperature profile to which the member has been subjected is measured. The maximum temperature in the temperature profile is estimated according to the reduction in reflectivity.
摘要翻译： 根据通过光学显微镜供给到算术处理单元的图像数据，利用数字计算部分计算出具有经受温度分布的金属膜的温度测量部件的薄金属膜上形成的突起的表面密度 ，CCD摄像头和I / O板。 物体的最高温度由温度计算单元根据表面密度和先前存储在存储器中的最大温度和表面密度的数据来确定。 此外，使用由布置在基板上的薄铝膜构成的温度测量部件。 测量由于根据构件所经受的温度分布而在膜表面上形成的凸起导致的膜的反射率的降低。 根据反射率的降低估算温度分布中的最高温度。
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2.发明申请Temperature-measuring member, temperature-measuring device, and method for measuring temperature 有权温度测量部件，温度测量装置以及测量温度的方法公开(公告)号：US20090016407A1
公开(公告)日：2009-01-15
申请号：US12216207
申请日：2008-07-01
CPC分类号： G01K3/14 , G01K11/06 , G01K2213/00
摘要： The surface density of projections formed on a thin metal film of a temperature-measuring member having the metal film having been subjected to a temperature profile is calculated with a number-calculating section according to image data fed into an arithmetic processing unit through an optical microscope, CCD camera, and I/O board. The maximum temperature of the object is determined with the temperature-calculating unit according to the surface density and data on the maximum temperature and surface density previously stored in memory. Furthermore, a temperature-measuring member constituted by a thin aluminum film arranged on a substrate is used. A reduction in the reflectivity of the film due to projections formed on the film surface according to a temperature profile to which the member has been subjected is measured. The maximum temperature in the temperature profile is estimated according to the reduction in reflectivity.
摘要翻译： 根据通过光学显微镜供给到算术处理单元的图像数据，利用数字计算部分计算出具有经受温度分布的金属膜的温度测量部件的薄金属膜上形成的突起的表面密度 ，CCD摄像头和I / O板。 物体的最高温度由温度计算单元根据表面密度和先前存储在存储器中的最大温度和表面密度的数据来确定。 此外，使用由布置在基板上的薄铝膜构成的温度测量部件。 测量由于根据构件所经受的温度分布而在膜表面上形成的凸起导致的膜的反射率的降低。 根据反射率的降低估算温度分布中的最高温度。
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3.发明申请DISPLAY DEVICE, COPPER ALLOY FILM FOR USE THEREIN, AND COPPER ALLOY SPUTTERING TARGET 审中-公开显示器件，铜合金膜及铜合金溅射靶公开(公告)号：US20110147753A1
公开(公告)日：2011-06-23
申请号：US13056444
申请日：2009-08-14
申请人： Takashi Onishi , Aya Miki , Hiroshi Goto , Masao Mizuno , Hirotaka Ito , Katsufumi Tomihisa
发明人： Takashi Onishi , Aya Miki , Hiroshi Goto , Masao Mizuno , Hirotaka Ito , Katsufumi Tomihisa
CPC分类号： H01L23/53233 , C22C9/00 , C22C9/01 , H01L27/124 , H01L2924/0002 , Y10T428/265 , H01L2924/00
摘要： Disclosed is a Cu alloy film for a display device that has high adhesion to a glass substrate while maintaining a low electric resistance characteristic of Cu-based materials. The Cu alloy film is wiring in direct contact with a glass substrate on a board and contains 0.1 to 10.0 atomic % in total of one or more elements selected from the group consisting of Ti, Al, and Mg. Also disclosed is a display device comprising a thin-film transistor that comprises the Cu alloy film. In a preferred embodiment of the display device, the thin-film transistor has a bottom gate-type structure, and a gate electrode and scanning lines in the thin-film transistor comprise the Cu alloy film and are in direct contact with the glass substrate.
摘要翻译： 公开了一种用于显示装置的Cu合金膜，其在保持Cu基材料的低电阻特性的同时对玻璃基板具有高粘附性。 Cu合金膜是与板上的玻璃基板直接接触的布线，并且含有0.1〜10.0原子％的一种以上选自Ti，Al，Mg的元素。 还公开了包括包含Cu合金膜的薄膜晶体管的显示装置。 在显示装置的优选实施例中，薄膜晶体管具有底栅型结构，并且薄膜晶体管中的栅电极和扫描线包括Cu合金膜并与玻璃基板直接接触。
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公开(公告)号：US08217397B2
公开(公告)日：2012-07-10
申请号：US12812913
申请日：2009-01-15
IPC分类号： H01L27/14 , H01L29/04 , H01L29/15 , H01L31/036
CPC分类号： H01L29/458
摘要： The present invention provides a thin film transistor substrate and a display device in which a decrease in the dry etching rate of a source electrode and drain electrode is not caused; no etching residues are generated; and a barrier metal can be eliminated between a semiconductor layer and metal wires such as the source and drain electrodes. The present invention is a thin film transistor substrate having a semiconductor layer 1, a source electrode 2, a drain electrode 3, and a transparent conductive film 4, in which the source electrode 2 and drain electrode 3 are formed by patterning by means of dry etching and comprises an Al alloy thin film comprising 0.1 to 1.5 atom % of Si and/or Ge, 0.1 to 3.0 atom % of Ni and/or Co, and 0.1 to 0.5 atom % of La and/or Nd, and the thin film transistor is directly connected with the semiconductor layer 1.
摘要翻译： 本发明提供一种薄膜晶体管基板和显示装置，其中不会引起源电极和漏电极的干蚀刻速率的降低; 不产生蚀刻残留物; 并且可以在半导体层和诸如源极和漏极之类的金属线之间消除阻挡金属。 本发明是一种具有半导体层1，源电极2，漏电极3和透明导电膜4的薄膜晶体管基板，其中源电极2和漏电极3通过干式图案形成 并且包括包含0.1至1.5原子％的Si和/或Ge，0.1至3.0原子％的Ni和/或Co，以及0.1至0.5原子％的La和/或Nd的Al合金薄膜，并且薄膜 晶体管与半导体层1直接连接。
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公开(公告)号：US07154180B2
公开(公告)日：2006-12-26
申请号：US11106439
申请日：2005-04-15
CPC分类号： H01L29/66757 , C23C14/185 , C23C14/3414 , G02F1/133553 , H01L27/124 , H01L27/1255 , H01L29/458 , H01L29/4908 , H01L29/66765 , H01L2924/0002 , Y10T428/12 , H01L2924/00
摘要： In an electronic device comprising a first electrodes consisting of a metal oxide and a second electrode consisting of an aluminum alloy film directly contacted and electrically connected to the first electrode, the contact interface between the aluminum alloy film and the first electrode is constructed so that at least a part of alloy components constituting the aluminum alloy film exist as a precipitate or concentrated layer. This construction enables direct contact between the aluminum alloy film and the electrode consisting of a metallic oxide and allows elimination of a barrier metal in such an electronic device, and manufacturing technology therefor.
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6.发明申请Copper alloy thin films, copper alloy sputtering targets and flat panel displays 审中-公开铜合金薄膜，铜合金溅射靶和平板显示器公开(公告)号：US20060091792A1
公开(公告)日：2006-05-04
申请号：US11235196
申请日：2005-09-27
CPC分类号： H01L23/53233 , C23C14/185 , G02F2001/136295 , H01J29/02 , H01J2211/225 , H01L27/124 , H01L2924/0002 , Y10T428/31678 , H01L2924/00
摘要： A Cu alloy thin film contains Fe and P with the balance being substantially Cu, in which the contents of Fe and P satisfy all the following conditions (1) to (3), and in which Fe2P is precipitated at grain boundaries of Cu after heat treatment at 200° C. to 500° C. for 1 to 120 minutes: 1.4NFe+8NP 1.0 (2) 12NFe+NP>0.5 (3) wherein NFe represents the content of Fe (atomic percent); and NP represents the content of P (atomic percent).
摘要翻译： Cu合金薄膜含有Fe和P，余量基本上为Cu，其中Fe和P的含量满足以下所有条件（1）至（3），其中Fe 2 P 在200℃至500℃热处理1〜120分钟后，在Cu的晶界处析出：<？在线公式描述=“在线公式”末端=“铅”→> 1.4N ＆lt;＆lt;＆lt;＆lt;＆lt;＆lt; 3＆gt;＆lt; 1.3（1）＆lt; -formulae description =“In-line Formulas”end =“lead”？> N＆lt;＆lt;＆lt;＆lt;＆lt; P＆lt; “In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line Formulas”end =“lead”？> 12N + N > 0.5（3）<？in-line-formula description =“In-line Formulas”end =“tail”？>其中N Fe表示Fe含量（原子百分数） ; N P表示P（原子百分比）的含量。
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7.发明申请Ag-base interconnecting film for flat panel display, Ag-base sputtering target and flat panel display 审中-公开用于平板显示器的Ag基互连膜，Ag基溅射靶和平板显示器公开(公告)号：US20050153162A1
公开(公告)日：2005-07-14
申请号：US10999027
申请日：2004-11-30
CPC分类号： C22C5/06 , C23C14/185 , C23C14/3414 , Y10T428/12896
摘要： An active matrix flat panel display includes pixels, TFTs for driving the pixels, and interconnecting lines connected to the TFTs. The interconnecting lines are formed by processing an interconnecting film of an Ag-base alloy containing 0.1 to 4.0 at % Nd and/or 0.01 to 1.5 at % Bi, and Ag as the remainder or an Ag-base alloy containing, in addition to Nd and/or Bi, one or some of elements including Cu, Au and Pd in a content in the range of 0.01 to 1.5 at %.
摘要翻译： 有源矩阵平板显示器包括像素，用于驱动像素的TFT和连接到TFT的互连线。 互连线通过加工含有0.1〜4.0at％的Nd和/或0.01〜1.5at％的Bi和Ag作为余量的Ag基合金的互连膜或除了Nd之外还含有Ag基合金 和/或Bi，包含Cu，Au和Pd中的一种或一些元素，其含量范围为0.01至1.5at％。
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公开(公告)号：US08350303B2
公开(公告)日：2013-01-08
申请号：US13286284
申请日：2011-11-01
IPC分类号： H01L27/085
CPC分类号： H01L29/458 , G02F2001/136295 , H01L27/12 , H01L27/124 , H01L29/4908 , H01L2224/73204
摘要： A display device in which an Al alloy film and a conductive oxide film are directly connected without interposition of refractory metal and some or all of Al alloy components deposit or are concentrated at the interface of contact between the Al alloy film and the conductive oxide film. The Al alloy film contains 0.1 to 6 at % of at least one element selected from the group consisting of Ni, Ag, Zn, Cu and Ge, and further contains 1) 0.1 to 2 at % of at least one element selected from the group consisting of Mg, Cr, Mn, Ru, Rh, Pd, Ir, Pt, La, Ce, Pr, Gd, Tb, Sm, Eu, Ho, Er, Tm, Yb, Lu and Dy or 2) 0.1 to 1 at % of at least one element selected from the group consisting of Ti, V, Zr, Nb, Mo, Hf, Ta and W, as the alloy components.
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9.发明授权Cu alloy wiring film, TFT element for flat-panel display using the Cu alloy wiring film, and Cu alloy sputtering target for depositing the Cu alloy wiring film 有权Cu合金布线膜，使用Cu合金布线膜的平板显示用TFT元件和Cu合金布线膜的Cu合金溅射靶公开(公告)号：US07994503B2
公开(公告)日：2011-08-09
申请号：US12517362
申请日：2007-12-04
申请人： Aya Hino , Katsufumi Tomihisa , Hiroshi Gotou , Takashi Onishi
发明人： Aya Hino , Katsufumi Tomihisa , Hiroshi Gotou , Takashi Onishi
IPC分类号： H01L29/04
CPC分类号： H01L21/32051 , C22C9/00 , C22C9/06 , C23C14/3414 , G02F2001/136295 , G02F2202/28 , H01B1/026 , H01L23/53233 , H01L27/124 , H01L29/4908 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： An object of the present invention is to provide: a Cu alloy wiring film that makes it possible to use Cu having a low electrical resistivity as a wiring material, exhibit a high adhesiveness to a glass substrate, and avoid the danger of peel off from the glass substrate; a TFT element for a flat-panel display produced with the Cu alloy wiring film; and a Cu alloy sputtering target used for the deposition of the Cu alloy wiring film. The present invention is a wiring film 2 composing a TFT element 1 for a flat-panel display and a sputtering target used for the deposition of the film and the material comprises Cu as the main component and at least one element selected from the group consisting of Pt, Ir, Pd, and Sm by 0.01 to 0.5 atomic percent in total. The wiring film 2 is layered on a glass substrate 3 and further a transparent conductive film 5 is layered thereon while an insulating film 4 is interposed in between.
摘要翻译： 本发明的目的是提供：可以使用具有低电阻率的Cu作为布线材料的Cu合金布线膜，对玻璃基板表现出高粘合性，并且避免了从玻璃基板剥离的危险 玻璃基板; 用Cu合金布线膜制造的平板显示器用TFT元件; 以及用于沉积Cu合金布线膜的Cu合金溅射靶。 本发明是构成用于平板显示器的TFT元件1和用于沉积膜的溅射靶的布线膜2，并且该材料包括Cu作为主要成分和至少一种选自以下的元素： Pt，Ir，Pd和Sm总计为0.01〜0.5原子％。 布线膜2层叠在玻璃基板3上，另外，在其间插入有绝缘膜4，并且层叠透明导电膜5。
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公开(公告)号：US20090134393A1
公开(公告)日：2009-05-28
申请号：US12090883
申请日：2006-12-01
IPC分类号： H01L33/00
CPC分类号： H01L27/124 , G02F2001/136295 , H01L29/458 , H01L29/4908
摘要： A thin-film transistor substrate in which an aluminum alloy film composing a source/drain wiring is directly connected with a transparent electrode. The thin-film transistor substrate includes a gate wiring, and source wiring and drain wiring, the gate wiring and the source and drain wiring being arranged orthogonally to each other. The single-layer aluminum alloy film composing the gate wiring and the single-layer aluminum alloy film composing the source wiring and the drain wiring are the same in composition. Furthermore, display devices can be mounted with the above thin-film transistor substrates.
摘要翻译： 其中构成源极/漏极布线的铝合金膜与透明电极直接连接的薄膜晶体管基板。 薄膜晶体管基板包括栅极布线，源极布线和漏极布线，栅极布线和源极和漏极布线彼此正交布置。 构成栅极布线的单层铝合金膜和构成源极布线和漏极布线的单层铝合金膜的组成相同。 此外，显示装置可以安装有上述薄膜晶体管基板。
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