公开(公告)号：US08058681B2

公开(公告)日：2011-11-15

申请号：US12405626

申请日：2009-03-17

申请人： Masao Shingu ,  Jun Fujiki ,  Naoki Yasuda ,  Koichi Muraoka

发明人： Masao Shingu ,  Jun Fujiki ,  Naoki Yasuda ,  Koichi Muraoka

IPC分类号： H01L29/792

CPC分类号： H01L29/7883 ,  G11C11/40 ,  G11C16/0408 ,  G11C16/0466 ,  G11C16/10 ,  G11C16/12 ,  G11C16/14 ,  G11C16/26 ,  H01L21/28282 ,  H01L27/11521 ,  H01L27/11556 ,  H01L27/11582 ,  H01L29/4234 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/788 ,  H01L29/792

摘要： According to an aspect of the present invention, there is provided a nonvolatile semiconductor memory element including: a semiconductor substrate including: a source region; a drain region; and a channel region; a lower insulating film that is formed on the channel region; a charge storage film that is formed on the lower insulating film and that stores data; an upper insulating film that is formed on the charge storage film; and a control gate that is formed on the upper insulating film, wherein the upper insulating film includes: a first insulting film; and a second insulating film that is laminated with the first insulating film, and wherein the first insulating film is formed to have a trap level density larger than that of the second insulating film.

摘要翻译： 根据本发明的一个方面，提供了一种非易失性半导体存储元件，包括：半导体衬底，包括：源极区; 漏区; 和通道区域; 形成在沟道区上的下绝缘膜; 电荷存储膜，形成在下绝缘膜上并存储数据; 形成在电荷存储膜上的上绝缘膜; 以及形成在所述上绝缘膜上的控制栅极，其中所述上绝缘膜包括：第一绝缘膜; 以及与所述第一绝缘膜层压的第二绝缘膜，并且其中所述第一绝缘膜形成为具有比所述第二绝缘膜的陷阱级密度大的陷阱级密度。

公开(公告)号：US20120032248A1

公开(公告)日：2012-02-09

申请号：US13272821

申请日：2011-10-13

申请人： Masao SHINGU ,  Jun Fujiki ,  Naoki Yasuda ,  Koichi Muraoka

发明人： Masao SHINGU ,  Jun Fujiki ,  Naoki Yasuda ,  Koichi Muraoka

IPC分类号： H01L29/792 ,  H01L29/788

CPC分类号： H01L29/7883 ,  G11C11/40 ,  G11C16/0408 ,  G11C16/0466 ,  G11C16/10 ,  G11C16/12 ,  G11C16/14 ,  G11C16/26 ,  H01L21/28282 ,  H01L27/11521 ,  H01L27/11556 ,  H01L27/11582 ,  H01L29/4234 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/788 ,  H01L29/792

摘要： According to an aspect of the present invention, there is provided a nonvolatile semiconductor memory element including: a semiconductor substrate including: a source region; a drain region; and a channel region; a lower insulating film that is formed on the channel region; a charge storage film that is formed on the lower insulating film and that stores data; an upper insulating film that is formed on the charge storage film; and a control gate that is formed on the upper insulating film, wherein the upper insulating film includes: a first insulting film; and a second insulating film that is laminated with the first insulating film, and wherein the first insulating film is formed to have a trap level density larger than that of the second insulating film.

摘要翻译： 根据本发明的一个方面，提供了一种非易失性半导体存储元件，包括：半导体衬底，包括：源极区; 漏区; 和通道区域; 形成在沟道区上的下绝缘膜; 电荷存储膜，形成在下绝缘膜上并存储数据; 形成在电荷存储膜上的上绝缘膜; 以及形成在所述上绝缘膜上的控制栅极，其中所述上绝缘膜包括：第一绝缘膜; 以及与所述第一绝缘膜层压的第二绝缘膜，并且其中所述第一绝缘膜形成为具有比所述第二绝缘膜的陷阱级密度大的陷阱级密度。

公开(公告)号：US20100078704A1

公开(公告)日：2010-04-01

申请号：US12404648

申请日：2009-03-16

申请人： Tsunehiro Ino ,  Shosuke Fujii ,  Jun Fujiki ,  Akira Takashima ,  Masao Shingu ,  Daisuke Matsushita ,  Naoki Yasuda ,  Koichi Muraoka

发明人： Tsunehiro Ino ,  Shosuke Fujii ,  Jun Fujiki ,  Akira Takashima ,  Masao Shingu ,  Daisuke Matsushita ,  Naoki Yasuda ,  Koichi Muraoka

IPC分类号： H01L29/792 ,  H01L21/28

CPC分类号： H01L29/792 ,  H01L29/517 ,  H01L29/66833

摘要： A semiconductor storage element includes: a source region and a drain region provided in a semiconductor substrate; a tunnel insulating film provided on the semiconductor substrate between the source region and the drain region; a charge storage film provided on the tunnel insulating film; a block insulating film provided on the charge storage film; a gate electrode provided on the block insulating film; and a region containing a gas molecule, the region provided in a neighborhood of an interface between the charge storage film and the block insulating film.

摘要翻译： 半导体存储元件包括：设置在半导体衬底中的源极区域和漏极区域; 设置在所述源极区域和所述漏极区域之间的所述半导体衬底上的隧道绝缘膜; 设置在所述隧道绝缘膜上的电荷存储膜; 设置在电荷存储膜上的块状绝缘膜; 设置在所述块绝缘膜上的栅电极; 以及包含气体分子的区域，所述区域设置在电荷存储膜和块绝缘膜之间的界面附近。

公开(公告)号：US08704290B2

公开(公告)日：2014-04-22

申请号：US13619223

申请日：2012-09-14

申请人： Masao Shingu ,  Jun Fujiki ,  Naoki Yasuda ,  Koichi Muraoka

发明人： Masao Shingu ,  Jun Fujiki ,  Naoki Yasuda ,  Koichi Muraoka

IPC分类号： H01L29/66

CPC分类号： H01L29/7883 ,  G11C11/40 ,  G11C16/0408 ,  G11C16/0466 ,  G11C16/10 ,  G11C16/12 ,  G11C16/14 ,  G11C16/26 ,  H01L21/28282 ,  H01L27/11521 ,  H01L27/11556 ,  H01L27/11582 ,  H01L29/4234 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/788 ,  H01L29/792

摘要： According to an aspect of the present invention, there is provided a nonvolatile semiconductor memory element including: a semiconductor substrate including: a source region; a drain region; and a channel region; a lower insulating film that is formed on the channel region; a charge storage film that is formed on the lower insulating film and that stores data; an upper insulating film that is formed on the charge storage film; and a control gate that is formed on the upper insulating film, wherein the upper insulating film includes: a first insulting film; and a second insulating film that is laminated with the first insulating film, and wherein the first insulating film is formed to have a trap level density larger than that of the second insulating film.

摘要翻译： 根据本发明的一个方面，提供了一种非易失性半导体存储元件，包括：半导体衬底，包括：源极区; 漏区; 和通道区域; 形成在沟道区上的下绝缘膜; 电荷存储膜，形成在下绝缘膜上并存储数据; 形成在电荷存储膜上的上绝缘膜; 以及形成在所述上绝缘膜上的控制栅极，其中所述上绝缘膜包括：第一绝缘膜; 以及与所述第一绝缘膜层压的第二绝缘膜，并且其中所述第一绝缘膜形成为具有比所述第二绝缘膜的陷阱级密度大的陷阱级密度。

公开(公告)号：US08569823B2

公开(公告)日：2013-10-29

申请号：US13235970

申请日：2011-09-19

申请人： Tsunehiro Ino ,  Masao Shingu ,  Shosuke Fujii ,  Akira Takashima ,  Daisuke Matsushita ,  Jun Fujiki ,  Naoki Yasuda ,  Yasushi Nakasaki ,  Koichi Muraoka

发明人： Tsunehiro Ino ,  Masao Shingu ,  Shosuke Fujii ,  Akira Takashima ,  Daisuke Matsushita ,  Jun Fujiki ,  Naoki Yasuda ,  Yasushi Nakasaki ,  Koichi Muraoka

IPC分类号： H01L29/788

CPC分类号： H01L29/513 ,  H01L21/28282 ,  H01L27/11568 ,  H01L29/517 ,  H01L29/66833 ,  H01L29/792

摘要： According to one embodiment, a semiconductor device includes a semiconductor region, a tunnel insulating film provided on the semiconductor region, a charge storage insulating film provided on the tunnel insulating film and having a hafnium oxide including a cubic region, a block insulating film provided on the charge storage insulating film, and a control gate electrode provided on the block insulating film.

摘要翻译： 根据一个实施例，半导体器件包括半导体区域，设置在半导体区域上的隧道绝缘膜，设置在隧道绝缘膜上并具有包含立方体区域的氧化铪的电荷存储绝缘膜，设置在 电荷存储绝缘膜和设置在块绝缘膜上的控制栅电极。

公开(公告)号：US20120068250A1

公开(公告)日：2012-03-22

申请号：US13235970

申请日：2011-09-19

申请人： Tsunehiro Ino ,  Masao Shingu ,  Shosuke Fujii ,  Akira Takashima ,  Daisuke Matsushita ,  Jun Fujiki ,  Naoki Yasuda ,  Yasushi Nakasaki ,  Koichi Muraoka

发明人： Tsunehiro Ino ,  Masao Shingu ,  Shosuke Fujii ,  Akira Takashima ,  Daisuke Matsushita ,  Jun Fujiki ,  Naoki Yasuda ,  Yasushi Nakasaki ,  Koichi Muraoka

IPC分类号： H01L29/788 ,  H01L21/28

CPC分类号： H01L29/513 ,  H01L21/28282 ,  H01L27/11568 ,  H01L29/517 ,  H01L29/66833 ,  H01L29/792

摘要： According to one embodiment, a semiconductor device includes a semiconductor region, a tunnel insulating film provided on the semiconductor region, a charge storage insulating film provided on the tunnel insulating film and having a hafnium oxide including a cubic region, a block insulating film provided on the charge storage insulating film, and a control gate electrode provided on the block insulating film.

摘要翻译： 根据一个实施例，半导体器件包括半导体区域，设置在半导体区域上的隧道绝缘膜，设置在隧道绝缘膜上并具有包含立方体区域的氧化铪的电荷存储绝缘膜，设置在 电荷存储绝缘膜和设置在块绝缘膜上的控制栅电极。

公开(公告)号：US07956405B2

公开(公告)日：2011-06-07

申请号：US12404648

申请日：2009-03-16

申请人： Tsunehiro Ino ,  Shosuke Fujii ,  Jun Fujiki ,  Akira Takashima ,  Masao Shingu ,  Daisuke Matsushita ,  Naoki Yasuda ,  Koichi Muraoka

发明人： Tsunehiro Ino ,  Shosuke Fujii ,  Jun Fujiki ,  Akira Takashima ,  Masao Shingu ,  Daisuke Matsushita ,  Naoki Yasuda ,  Koichi Muraoka

IPC分类号： H01L29/788

CPC分类号： H01L29/792 ,  H01L29/517 ,  H01L29/66833

摘要： A semiconductor storage element includes: a source region and a drain region provided in a semiconductor substrate; a tunnel insulating film provided on the semiconductor substrate between the source region and the drain region; a charge storage film provided on the tunnel insulating film; a block insulating film provided on the charge storage film; a gate electrode provided on the block insulating film; and a region containing a gas molecule, the region provided in a neighborhood of an interface between the charge storage film and the block insulating film.

摘要翻译： 半导体存储元件包括：设置在半导体衬底中的源极区域和漏极区域; 设置在所述源极区域和所述漏极区域之间的所述半导体衬底上的隧道绝缘膜; 设置在隧道绝缘膜上的电荷存储膜; 设置在电荷存储膜上的块状绝缘膜; 设置在所述块绝缘膜上的栅电极; 以及包含气体分子的区域，所述区域设置在电荷存储膜和块绝缘膜之间的界面附近。

公开(公告)号：US08294195B2

公开(公告)日：2012-10-23

申请号：US13272821

申请日：2011-10-13

申请人： Masao Shingu ,  Jun Fujiki ,  Naoki Yasuda ,  Koichi Muraoka

发明人： Masao Shingu ,  Jun Fujiki ,  Naoki Yasuda ,  Koichi Muraoka

IPC分类号： H01L29/788

CPC分类号： H01L29/7883 ,  G11C11/40 ,  G11C16/0408 ,  G11C16/0466 ,  G11C16/10 ,  G11C16/12 ,  G11C16/14 ,  G11C16/26 ,  H01L21/28282 ,  H01L27/11521 ,  H01L27/11556 ,  H01L27/11582 ,  H01L29/4234 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/788 ,  H01L29/792

摘要： According to an aspect of the present invention, there is provided a nonvolatile semiconductor memory element including: a semiconductor substrate including: a source region; a drain region; and a channel region; a lower insulating film that is formed on the channel region; a charge storage film that is formed on the lower insulating film and that stores data; an upper insulating film that is formed on the charge storage film; and a control gate that is formed on the upper insulating film, wherein the upper insulating film includes: a first insulting film; and a second insulating film that is laminated with the first insulating film, and wherein the first insulating film is formed to have a trap level density larger than that of the second insulating film.

摘要翻译： 根据本发明的一个方面，提供了一种非易失性半导体存储元件，包括：半导体衬底，包括：源极区; 漏区; 和通道区域; 形成在沟道区上的下绝缘膜; 电荷存储膜，形成在下绝缘膜上并存储数据; 形成在电荷存储膜上的上绝缘膜; 以及形成在所述上绝缘膜上的控制栅极，其中所述上绝缘膜包括：第一绝缘膜; 以及与所述第一绝缘膜层压的第二绝缘膜，并且其中所述第一绝缘膜形成为具有比所述第二绝缘膜的陷阱级密度大的陷阱级密度。

公开(公告)号：US20100034023A1

公开(公告)日：2010-02-11

申请号：US12405626

申请日：2009-03-17

申请人： Masao SHINGU ,  Jun Fujiki ,  Naoki Yasuda ,  Koichi Muraoka

发明人： Masao SHINGU ,  Jun Fujiki ,  Naoki Yasuda ,  Koichi Muraoka

IPC分类号： G11C16/04 ,  H01L29/792

CPC分类号： H01L29/7883 ,  G11C11/40 ,  G11C16/0408 ,  G11C16/0466 ,  G11C16/10 ,  G11C16/12 ,  G11C16/14 ,  G11C16/26 ,  H01L21/28282 ,  H01L27/11521 ,  H01L27/11556 ,  H01L27/11582 ,  H01L29/4234 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/788 ,  H01L29/792

摘要： According to an aspect of the present invention, there is provided a nonvolatile semiconductor memory element including: a semiconductor substrate including: a source region; a drain region; and a channel region; a lower insulating film that is formed on the channel region; a charge storage film that is formed on the lower insulating film and that stores data; an upper insulating film that is formed on the charge storage film; and a control gate that is formed on the upper insulating film, wherein the upper insulating film includes: a first insulting film; and a second insulating film that is laminated with the first insulating film, and wherein the first insulating film is formed to have a trap level density larger than that of the second insulating film.

摘要翻译： 根据本发明的一个方面，提供了一种非易失性半导体存储元件，包括：半导体衬底，包括：源极区; 漏区; 和通道区域; 形成在沟道区上的下绝缘膜; 电荷存储膜，形成在下绝缘膜上并存储数据; 形成在电荷存储膜上的上绝缘膜; 以及形成在所述上绝缘膜上的控制栅极，其中所述上绝缘膜包括：第一绝缘膜; 以及与所述第一绝缘膜层压的第二绝缘膜，并且其中所述第一绝缘膜形成为具有比所述第二绝缘膜的陷阱级密度大的陷阱级密度。

公开(公告)号：US08193577B2

公开(公告)日：2012-06-05

申请号：US12506588

申请日：2009-07-21

申请人： Akira Takashima ,  Masao Shingu ,  Naoki Yasuda ,  Koichi Muraoka

发明人： Akira Takashima ,  Masao Shingu ,  Naoki Yasuda ,  Koichi Muraoka

IPC分类号： H01L29/792 ,  H01L21/8238 ,  H01L21/336

CPC分类号： H01L29/513 ,  H01L27/11568 ,  H01L29/4234 ,  H01L29/792

摘要： A nonvolatile semiconductor memory device includes a source region and a drain region provided apart from each other in a semiconductor substrate, a first insulating film provided on a channel region between the source region and the drain region, a charge storage layer provided on the first insulating film, a second insulating film provided on the charge storage layer and including a stacked structure of a lanthanum aluminum silicate film and a dielectric film made of silicon oxide or silicon oxynitride, and a control gate electrode provided on the second insulating film.

摘要翻译： 非易失性半导体存储器件包括在半导体衬底中彼此分开设置的源极区域和漏极区域，设置在源极区域和漏极区域之间的沟道区域上的第一绝缘膜，设置在第一绝缘体上的电荷存储层 膜，设置在电荷存储层上并包括硅酸铝镧硅酸盐膜和由氧化硅或氮氧化硅制成的电介质膜的叠层结构的第二绝缘膜和设置在第二绝缘膜上的控制栅电极。