摘要:
An optical modulation device for effecting optical modulation by controlling the diffraction phenomenon of light, which not only consumes a small amouhnt of the driving energy employed, such as a electric power, but which is also capable of improvements in reliability.
摘要:
An optical modulation element characterized in that a two-dimensional phase type diffraction gratings, whose refractive index changes for each predetermined period along two different directions in a predetermined plane, is adopted, and a changing state of the refractive index is controlled to change characteristics of the diffraction grating, so that a diffraction phenomenon of light incident on the element is controlled.
摘要:
A display element includes a substrate and a display pattern formed on the substrate, the display pattern including a diffraction grating. The width in the direction perpendicular to the grating lines of the diffraction grating of the display pattern is selected so as to prevent re-diffraction of the light diffracted by the one diffraction grating. An observation apparatus includes the afore-said display element, but the display pattern has a first diffraction grating structure and a second diffraction grating structure. An illuminating system and an observation system are added so as to allow for observation of the display pattern. The direction of the grating lines of the first diffraction grating structure differs from that of the grating lines of the second diffraction grating structure, thereby preventing the occurrence of a rainbow-like image.
摘要:
A light deflection device includes a deflection member having a sphere body enclosing a deflection face portion for deflecting a light beam, or a segmental sphere body having the deflection face portion and a segmental sphere face opposing to the deflection face portion. The device also includes a supporting member for supporting the deflection member in a turnable manner, and a driver for turning the deflection member. The driver is provided on the sphere face of the deflection member, and at a position opposing the sphere face or the segmental sphere face of the deflection member to apply a driving force to the sphere face or the segmental face. In one embodiment, a light deflection device array includes the arrangement of light deflection devices in a one-dimensional or two-dimensional array.
摘要:
A semiconductor memory device includes a plurality of memory cell transistors arranged in a matrix and each configured to store data, and a test circuit configured to output to outside the semiconductor memory device an output signal indicative of an amount of test current flowing through a selected one of the plurality of memory cell transistors, wherein the test circuit includes a plurality of reference cell transistors employed to successively produce varying amounts of currents, a comparison circuit configured to successively compare the amount of test current with each of the varying amounts of currents, and a code generating circuit configured to generate a code indicative of a result of the successive comparisons performed by the comparison circuit, wherein the code is output as the output signal.
摘要:
A distributed Bragg reflection (DBR) semiconductor laser is controlled in an image projecting apparatus. The image projecting apparatus includes the DBR semiconductor laser which is provided with a phase region and a DBR region, a light wavelength converting device for converting fundamental-wave light emitted from the DBR semiconductor laser into second harmonic wave light, an optical deflector for scanning the second harmonic wave in a one-dimensional or two-dimensional manner, and a modulating portion for modulating the DBR semiconductor laser based on an image signal. In the control method, a coefficient calculating step and a wavelength adjusting step are performed within a non-drawing time during which a drawing signal, which corresponds to the image signal, is absent. In the coefficient calculating step, at least one coefficient in a relationship between a DBR current to be injected into the DBR region and a phase current to be injected into the phase region for continuously shifting the wavelength of the fundamental-wave light is calculated. In the wavelength adjusting step, the DBR current injected into the DBR region and the phase current injected into the phase region are changed based on the relationship such that the second harmonic wave light is adjusted.
摘要:
A semiconductor laser element capable of changing an oscillation wavelength over a wide range without increasing a threshold current is disclosed. A wavelength selective filter capable of changing a selected wavelength over a wide range is also disclosed. The semiconductor laser element has a substrate and a laser resonator formed on the substrate by stacking semiconductor layers including an active layer and an optical waveguide layer of a superlattice structure. The resonator includes a first reflection portion, an active portion, a phase adjustment portion and second reflection portion which are juxtaposed in a resonance direction. Diffraction gratings are formed in the optical guide layer of the first and second reflection portions. Electrodes are independently formed in the active portion, the phase adjustment portion and the first and second reflection portions. Further, a method for driving the semiconductor laser is disclosed.
摘要:
This specification discloses an integrated type optical node comprising a substrate, a channel light waveguide formed on the substrate for connecting the transmission lines of an optical information system, an amplifying portion provided on the light waveguide for amplifying a light propagated through the waveguide, and a light branching-off portion provided on the light waveguide for coupling a light transmitter and/or a light receiver to the transmission lines. The specification also discloses an optical information system using such optical node.
摘要:
A nonlinear optical element comprises a nonlinear medium having photoconductivity and an electrooptical effect, a pair of electrodes, arranged on two side surfaces of said nonlinear medium, for applying an electric field to the medium, for serving as reflection mirrors forming an optical resonator, and a pair of insulating layers formed between the nonlinear medium and the electrodes. A predetermined DC voltage is supplied to the electrodes, and the nonlinear medium is irradiated with a light having a variable intensity. Thus, the reflectance and transmittance of the optical element is non-linearly varied in accordance with the intensity of the incident light. Also disclosed is a method for activating such a nonlinear optical element.
摘要:
A semiconductor memory device includes a plurality of memory cell transistors arranged in a matrix and each configured to store data, and a test circuit configured to output to outside the semiconductor memory device an output signal indicative of an amount of test current flowing through a selected one of the plurality of memory cell transistors, wherein the test circuit includes a plurality of reference cell transistors employed to successively produce varying amounts of currents, a comparison circuit configured to successively compare the amount of test current with each of the varying amounts of currents, and a code generating circuit configured to generate a code indicative of a result of the successive comparisons performed by the comparison circuit, wherein the code is output as the output signal.