摘要:
A boosting circuit included in a semiconductor integrated circuit for efficiently stabilizing a boosted potential, including a plurality of boosting circuits and a timing control circuit for distributing the operations of the boosting circuits. Boosting operations per operating cycle of a memory increase in number so as to suppress a reduction in boosted source potential, the reduction being caused by consumption. Moreover, it is possible to perform a boosting operation in a time period equal to that of consuming boosted source potential, resulting in an efficient boosting operation.
摘要:
A boosting circuit included in a semiconductor integrated circuit for efficiently stabilizing a boosted potential, including a plurality of boosting circuits and a timing control circuit for distributing the operations of the boosting circuits. Boosting operations per operating cycle of a memory increase in number so as to suppress a reduction in boosted source potential, the reduction being caused by consumption. Moreover, it is possible to perform a boosting operation in a time period equal to that of consuming boosted source potential, resulting in an efficient boosting operation.
摘要:
A semiconductor integrated circuit is provided in which a negative voltage generation circuit capable of supplying a memory cell transistor substrate with a stable negative voltage, independently of the fluctuation of a power source voltage or environmental conditions and the process conditions etc., is realized easily, and in which the data holding time of a memory can be secured sufficiently, and the power consumption is reduced. A voltage detection part 1-B included in the negative voltage generation circuit is provided with a constant voltage generation circuit 1-B1, a measuring voltage generation circuit 1-B3, which receives a constant voltage STDVOUT sent from the constant voltage generation circuit via a voltage supplying circuit 1-B2 and a negative voltage VBB sent from a negative voltage generation part and converts it into a measuring voltage REFV0 by resistors R1′, R2′, a first comparator AMP12, which compares the measuring voltage sent from the measuring voltage generation circuit with ground voltage and outputs the result of comparison, and an output buffer circuit 1-B4′, which amplifies the compared output from the first comparator and outputs it to the negative voltage generation part.
摘要:
An integrated thin-film solar battery having a plurality of unit elements connected in series includes a substrate, a plurality of spaced apart first electrode layers formed on the substrate; a plurality of semiconductor layers disposed on said plurality of first electrode layers in such a manner that each of the semiconductor layers is formed on two adjacent first electrodes and has a connection opening located on one of the two first electrodes, an electrically conductive layer formed on each of the semiconductor layers except on the region of the connection opening, and a second electrode layer disposed on each of the electrically conductive layers such that the second electrode layer is electrically connected to one of the two adjacent first electrode layers through the connection opening, to form a region interposed between the second electrode layer and the other first electrode layer as the unit element.
摘要:
A photovoltaic module comprises a transparent substrate, a plurality of photovoltaic cells formed on the back surface of the substrate, busbars each including a busbar body connected electrically to the photovoltaic cells, an electrical insulating filler covering the photovoltaic cells and the busbar bodies, a spacer, and a cover film covering the filler. Each busbar integrally includes the busbar body and an extension long enough to project from one end of the transparent substrate. The busbar extensions, which serve as output fetching lines, are bent along the spacer, and their respective output end portions are drawn out through the cover film. The output end portions are connected individually to terminals of a terminal box.
摘要:
A method for removing short circuits in thin film solar cell elements during manufacturing by applying a pseudo-alternating voltage between the substrate side and the back electrodes of the solar cell elements. The waveform of the pseudo-alternating voltage may be a sinusoidal wave, a half-wave sinusoidal wave, a sawtooth wave, a square wave or the like. The peak voltage in the reverse direction is up to the reverse breakdown voltage of the solar cell element, and the waveform may either contain a small forward component or no fond component The peak voltage in Se reverse direction may also momentarily exceed the reverse breakdown voltage. The period of the pseudo-alternating voltage matches the tine constant of the solar cell element determined by the capacity and reverse resistance of the solar cell element. The pseudo-alternating voltage induces an alternating current which discharges the accumulated charges in the solar cell element, thereby protecting it from high voltages generated by accumulated charges. Consequently, the method effectively removes short-circuits in the semiconductor layer without damaging non-short-circuited sections of the semiconductor layer.
摘要:
In an X ray detecting device comprising XL converting unit for converting the X rays into visible light corresponding to the intensity of the X rays and a LE converting unit for converting the visible light into an electrical signal corresponding to the intensity of the visible light, the base layer of the LE converting unit is formed of a material such that the base layer does not substantially absorb the X rays so that the image of the LE converting unit does not appear on the picture of the object.
摘要:
A semiconductor integrated circuit includes a functional circuit and a power source voltage generating circuit used for operating the functional circuit. In the power source voltage generating circuit, output stage transistors are driven by comparing a plurality of reference voltages produced by a plurality of resistors connected in series to one another with output voltages of a plurality of differential amplifiers connected in parallel to one another and varying gate voltages.
摘要:
A thin film based solar cell module having superior appearance without glittering, and method of manufacturing the same in a simple manner at a low cost are provided. The solar cell module includes a glass substrate 10 and a photo semiconductor element formed on a surface different from a light entering surface of glass substrate 10. The glass substrate 10 is formed of a figured glass having recesses and protrusions formed to provide antiglaring effect, on the light entering surface. The photo semiconductor element is formed by successively stacking a transparent electrode 2, a photo semiconductor layer 3 and a back electrode layer 5.
摘要:
A plurality of solder bumps are arranged in a row at regular pitch in a lead wire soldering region of a solar battery. A soldering apparatus for soldering a lead wire to the lead wire soldering region via the solder bumps comprises a lead wire feeding section for feeding out the lead wire. An end of the lead wire in the lead wire feeding section is chucked and the lead wire is laid over all length of the row of solder bumps. The soldering apparatus further comprises a soldering unit for soldering the lead wire onto the solder bump. The soldering unit has a lead wire holding member for holding the lead wire on a solder bump and a soldering iron. The soldering apparatus repeats an operation for welding the lead wire to the solder bump by means of the soldering iron, while the lead wire is held by the lead wire holding member.