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181 条记录 (耗时 0.047 秒)

    Image sensor and image capture apparatus
    3.
    发明授权
    Image sensor and image capture apparatus 有权
    图像传感器和图像捕获设备

    公开(公告)号：US09165964B2

    公开(公告)日：2015-10-20

    申请号：US13817387

    申请日：2011-08-12

    申请人： Koichi Fukuda

    发明人： Koichi Fukuda

    IPC分类号： H01L27/146 ,  G03B13/36 ,  H04N5/225

    CPC分类号： H01L27/14627 ,  G03B13/36 ,  H01L27/14605 ,  H01L27/1461 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14643 ,  H04N5/2256 ,  H04N5/23212 ,  H04N5/3696

    摘要： An image sensor in which each pixel includes a first sub-pixel including a first semiconductor layer, a second sub-pixel including a second semiconductor layer having a polarity different from a polarity of the first semiconductor layer, a third semiconductor layer having a polarity equal to the polarity of the first semiconductor layer, and a microlens, and which includes a plurality of pixels in which the first semiconductor is included in the second semiconductor layer, and the second semiconductor layer is included in the third semiconductor layer, wherein a center of gravity position of a light-receiving surface defining the first semiconductor layer is different from a center of gravity position of a light-receiving surface defining both the first semiconductor layer and the second semiconductor layer.

    摘要翻译： 一种图像传感器，其中每个像素包括包括第一半导体层的第一子像素，包括具有与第一半导体层的极性不同的极性的第二半导体层的第二子像素，具有极性相等的第三半导体层 涉及第一半导体层的极性和微透镜，并且其包括多个像素，其中第一半导体包括在第二半导体层中，并且第二半导体层包括在第三半导体层中，其中， 限定第一半导体层的光接收表面的重力位置不同于限定第一半导体层和第二半导体层的光接收表面的重心位置。

    Semiconductor memory device and method for writing therein
    5.
    发明授权
    Semiconductor memory device and method for writing therein 有权
    半导体存储器件及其中写入的方法

    公开(公告)号：US09003105B2

    公开(公告)日：2015-04-07

    申请号：US13603697

    申请日：2012-09-05

    申请人： Ayako Yamano ,  Teruo Takagiwa ,  Koichi Fukuda ,  Hitoshi Shiga ,  Osamu Nagao

    发明人： Ayako Yamano ,  Teruo Takagiwa ,  Koichi Fukuda ,  Hitoshi Shiga ,  Osamu Nagao

    IPC分类号： G06F12/08 ,  G06F12/02 ,  G11C16/00 ,  G11C11/56 ,  G11C16/16

    CPC分类号： G06F12/0891 ,  G06F12/0246 ,  G06F2212/7209 ,  G11C11/5635 ,  G11C16/00 ,  G11C16/16 ,  Y02D10/13

    摘要： According to one embodiment, a semiconductor memory device includes a plurality of blocks in a memory cell, each of the blocks acting as an erasure unit of data, the block including a plurality of pages, each of the pages including a plurality of memory cell transistors, each of the memory cell transistors being configured to be an erasure state or a first retention state based on a threshold voltage of the memory cell transistor, and a controller searching data in the block with respect to, writing a first flag denoting effective into a prescribed page of the block with the erasure state, and writing the first flag denoting non-effective into a prescribed page of the block with the first retention state, reading out the prescribed page of the block with the first retention state, and determining that the block is writable when the first flag denotes effective.

    摘要翻译： 根据一个实施例，半导体存储器件包括存储器单元中的多个块，每个块用作数据的擦除单元，该块包括多个页，每个页包括多个存储单元晶体管 每个存储单元晶体管被配置为基于存储单元晶体管的阈值电压的擦除状态或第一保持状态，以及控制器搜索块中的数据，将表示有效的第一标志写入到 具有擦除状态的块的规定页面，并且将表示无效的第一标志写入具有第一保持状态的块的规定页面，以第一保留状态读出块的规定页面，并且确定 当第一个标志表示有效时，块是可写的。

    Nonvolatile semiconductor memory device and method of manufacturing the same
    6.
    发明授权
    Nonvolatile semiconductor memory device and method of manufacturing the same 有权
    非易失性半导体存储器件及其制造方法

    公开(公告)号：US08836010B2

    公开(公告)日：2014-09-16

    申请号：US13344765

    申请日：2012-01-06

    申请人： Koichi Fukuda ,  Rieko Tanaka ,  Takumi Abe

    发明人： Koichi Fukuda ,  Rieko Tanaka ,  Takumi Abe

    IPC分类号： H01L29/792 ,  H01L27/115 ,  H01L27/105 ,  H01L49/02

    CPC分类号： H01L27/11531 ,  H01L27/105 ,  H01L27/11526 ,  H01L28/24

    摘要： A nonvolatile semiconductor memory device including a memory cell configured to store data and a resistor element provided around the memory cell. The memory cell includes a charge storage layer provided above a substrate, a first semiconductor layer formed on a top surface of the charge storage layer via an insulating layer, and a first low resistive layer formed on a top surface of the first semiconductor layer and having resistance lower than that of the first semiconductor layer. The resistor element includes a second semiconductor layer formed on the same layer as the first semiconductor layer, and a second low resistive layer formed on the same layer as the first low resistive layer and on a top surface of the second semiconductor layer, having resistance lower than that of the second semiconductor layer.

    摘要翻译： 一种非易失性半导体存储器件，包括被配置为存储数据的存储单元和设置在存储单元周围的电阻元件。 存储单元包括设置在基板上的电荷存储层，经由绝缘层形成在电荷存储层的顶表面上的第一半导体层和形成在第一半导体层的顶表面上的第一低电阻层，并且具有 电阻低于第一半导体层的电阻。 电阻元件包括形成在与第一半导体层相同的层上的第二半导体层，以及形成在与第一低电阻层相同的层上的第二低电阻层，以及形成在第二半导体层的顶表面上的第二低电阻层， 比第二半导体层的厚度大。

    Semiconductor device
    7.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US08791517B2

    公开(公告)日：2014-07-29

    申请号：US13052152

    申请日：2011-03-21

    申请人： Hiroyuki Kutsukake ,  Yoshiko Kato ,  Yoshihisa Watanabe ,  Koichi Fukuda ,  Kazunori Masuda

    发明人： Hiroyuki Kutsukake ,  Yoshiko Kato ,  Yoshihisa Watanabe ,  Koichi Fukuda ,  Kazunori Masuda

    IPC分类号： H01L29/78 ,  H01L29/92

    CPC分类号： H01L27/11526 ,  H01L27/11521 ,  H01L27/11529

    摘要： According to one embodiment, a semiconductor device includes at least one semiconductor region provided in a semiconductor substrate, and a capacitor group including a plurality of capacitors provided in the semiconductor region, each capacitor including a capacitor insulating film provided on the semiconductor region, a capacitor electrode provided on the capacitor insulating film, and at least one diffusion layer provided in the semiconductor region adjacent to the capacitor electrode.

    摘要翻译： 根据一个实施例，半导体器件包括设置在半导体衬底中的至少一个半导体区域和包括设置在半导体区域中的多个电容器的电容器组，每个电容器包括设置在半导体区域上的电容器绝缘膜，电容器 设置在电容器绝缘膜上的电极以及设置在与电容器电极相邻的半导体区域中的至少一个扩散层。

    Display apparatus having a circular polarizer
    8.
    发明授权
    Display apparatus having a circular polarizer 有权
    具有圆偏振器的显示装置

    公开(公告)号：US08482194B2

    公开(公告)日：2013-07-09

    申请号：US12777136

    申请日：2010-05-10

    申请人： Koichi Fukuda ,  Rei Kurashima ,  Hideo Mori

    发明人： Koichi Fukuda ,  Rei Kurashima ,  Hideo Mori

    IPC分类号： H05B33/00 ,  H05B33/02

    CPC分类号： H01L51/5281 ,  H01L27/3211

    摘要： A display apparatus includes a light emitting device emitting red light, a light emitting device emitting green light, and a light emitting device emitting blue light. The display apparatus includes a circular polarizer provided on the light extraction side of the light emitting devices. Each light emitting device includes a periodic structure for extracting light from the light extraction side of the light emitting device, the light being generated in a light emitting layer and guided in the in-plane direction of a substrate. Each period of the periodic structure of the light emitting devices is identical, and the period of the periodic structure is more than 200 nm and 380 nm or less.

    摘要翻译： 显示装置包括发射红光的发光装置，发出绿光的发光装置和发出蓝光的发光装置。 显示装置包括设置在发光装置的光提取侧的圆偏振片。 每个发光器件包括用于从发光器件的光提取侧提取光的周期性结构，所述光在发光层中产生并在衬底的面内方向上被引导。 发光器件的周期结构的每个周期是相同的，并且周期性结构的周期大于200nm和380nm以下。

    IMAGE SENSOR AND IMAGE CAPTURE APPARATUS
    9.
    发明申请
    IMAGE SENSOR AND IMAGE CAPTURE APPARATUS 有权
    图像传感器和图像捕获设备

    公开(公告)号：US20130140663A1

    公开(公告)日：2013-06-06

    申请号：US13817387

    申请日：2011-08-12

    申请人： Koichi Fukuda

    发明人： Koichi Fukuda

    IPC分类号： H01L27/146

    CPC分类号： H01L27/14627 ,  G03B13/36 ,  H01L27/14605 ,  H01L27/1461 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14643 ,  H04N5/2256 ,  H04N5/23212 ,  H04N5/3696

    摘要： An image sensor in which each pixel includes a first sub-pixel including a first semiconductor layer, a second sub-pixel including a second semiconductor layer having a polarity different from a polarity of the first semiconductor layer, a third semiconductor layer having a polarity equal to the polarity of the first semiconductor layer, and a microlens, and which includes a plurality of pixels in which the first semiconductor is included in the second semiconductor layer, and the second semiconductor layer is included in the third semiconductor layer, wherein a center of gravity position of a light-receiving surface defining the first semiconductor layer is different from a center of gravity position of a light-receiving surface defining both the first semiconductor layer and the second semiconductor layer.

    摘要翻译： 一种图像传感器，其中每个像素包括包括第一半导体层的第一子像素，包括具有与第一半导体层的极性不同的极性的第二半导体层的第二子像素，具有极性相等的第三半导体层 涉及第一半导体层的极性和微透镜，并且其包括多个像素，其中第一半导体包括在第二半导体层中，并且第二半导体层包括在第三半导体层中，其中， 限定第一半导体层的光接收表面的重力位置不同于限定第一半导体层和第二半导体层的光接收表面的重心位置。

    IMAGE SENSOR AND IMAGE-CAPTURING APPARATUS
    10.
    发明申请
    IMAGE SENSOR AND IMAGE-CAPTURING APPARATUS 有权
    图像传感器和图像捕获设备

    公开(公告)号：US20120249852A1

    公开(公告)日：2012-10-04

    申请号：US13424865

    申请日：2012-03-20

    申请人： Koichi Fukuda

    发明人： Koichi Fukuda

    IPC分类号： H04N5/335 ,  H04N5/232

    CPC分类号： H01L27/14623 ,  H01L27/14605 ,  H01L27/1461 ,  H01L27/1463 ,  H04N5/2256 ,  H04N5/232 ,  H04N5/23212 ,  H04N5/3696 ,  H04N9/045

    摘要： The capacitance of a charge-accumulating layer of an imaging pixel is made different from that of a charge-accumulating layer of a focusing pixel, thereby reducing the difference in saturation capacitance due to the difference between the light-reception efficiencies of the imaging pixel and the focusing pixel. The ratio between the capacitance of the charge-accumulating layer of the imaging pixel and that of the charge-accumulating layer of the focusing pixel is determined in consideration of a variation in ratio between the light-reception efficiencies of the imaging pixel and the focusing pixel with a change in at least one of the exit pupil distance and the aperture value.

    摘要翻译： 使得成像像素的电荷累积层的电容与聚焦像素的电荷累积层的电容不同，从而减小由于成像像素的光接收效率和摄像像素之间的差异导致的饱和电容差 聚焦像素。 考虑到成像像素的光接收效率与聚焦像素的比例的变化，确定成像像素的电荷累积层的电容与聚焦像素的电荷累积层的电容之间的比率 出射光瞳距离和光圈值中的至少一个的变化。