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公开(公告)号：US06812790B2
公开(公告)日：2004-11-02
申请号：US10204916
申请日：2002-08-27
IPC分类号： H03F130
CPC分类号： H04N5/378 , H04N5/3575 , H04N5/361
摘要： In a signal read circuit including a plurality of circuit rows each having a charge amplifier connected to a photoelectric conversion element PD and a CDS circuit 2S for performing correlated double sampling for an output from the charge amplifier, a dummy circuit row DMY having the same configuration as a circuit row SLT is connected in parallel with this circuit row SLT. By calculating the difference between these circuit rows connected in parallel, offset variations generated in the two circuit rows SLT and DMY can be removed.
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公开(公告)号：US5912463A
公开(公告)日：1999-06-15
申请号：US912694
申请日：1997-08-18
摘要： A light chopper periodically transmits and blocks light, and first a dark current cancelling circuit determines an approximate mean value of the dark current from a photodiode when the light is blocked and cancels thus the mean value from the current signal fed into the integrated circuit, add to this, a differential arithmetic circuit that subtracts the remaining dark current component from the output of the integration circuit, thus the remaining signal indicates only the signal current component.
摘要翻译： 光斩波器周期性地传输和阻挡光，并且首先，暗电流消除电路确定当光被阻挡时来自光电二极管的暗电流的近似平均值，从而抵消馈送到集成电路的电流信号的平均值， 为此，差分运算电路从积分电路的输出中减去剩余的暗电流分量，因此剩余信号仅表示信号电流分量。
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公开(公告)号：US07791016B2
公开(公告)日：2010-09-07
申请号：US12259740
申请日：2008-10-28
申请人： Masatoshi Ishihara , Nao Inoue , Hiroo Yamamoto
发明人： Masatoshi Ishihara , Nao Inoue , Hiroo Yamamoto
IPC分类号： H01J40/14 , H01L27/00 , H01L31/00 , H01L31/062
CPC分类号： H01L27/14634 , H01L27/14623 , H01L27/14636 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2224/83951 , H01L2924/00
摘要： A photodetector includes a plurality of photodetecting elements which output electrical signals corresponding to the intensities of light that entered these; a signal processing element which is opposed to the photodetecting elements and is connected to the photodetecting elements via conductive bumps, and into which electrical signals output from the photodetecting elements are input; a resin which has electrical insulation and is filled in at least at the gaps between the photodetecting elements and the signal processing element; and a light shielding member arranged so as to cover the surfaces exposed from the photodetecting elements and the signal processing element in the resin.
摘要翻译： 光检测器包括多个光电元件，其输出对应于进入这些光的强度的电信号; 信号处理元件，与所述光检测元件相对，经由导电凸块与所述受光元件连接，并从所述受光元件输出电信号; 至少在光检测元件和信号处理元件之间的间隙填充有电绝缘性的树脂; 以及遮光部件，其设置成覆盖从树脂中的受光元件和信号处理元件露出的面。
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公开(公告)号：US09496298B2
公开(公告)日：2016-11-15
申请号：US14005872
申请日：2012-03-27
申请人： Masatoshi Ishihara , Nao Inoue , Hirokazu Yamamoto
发明人： Masatoshi Ishihara , Nao Inoue , Hirokazu Yamamoto
IPC分类号： H01L27/146 , H04N1/03
CPC分类号： H01L27/14609 , H01L27/146 , H01L27/14634 , H01L27/14694 , H01L2224/16135 , H01L2224/16148 , H01L2224/73204 , H04N1/03
摘要： A first semiconductor substrate 1 and a second semiconductor substrate 2 are different in material, and therefore have sensitivities to incident light of mutually different wavelength bands. Respective photodiodes of photodiode arrays are connected to amplifiers of the first semiconductor substrate 1. According to this method, the second semiconductor substrate 2 is separated from the wafer by etching the second semiconductor substrate 2 and then dicing a deepest portion of the etched groove. The density of crystal defects in a side surface produced by etching is smaller than the density of crystal defects in a side surface produced by dicing. Because a photodiode located in an end portion of the second semiconductor substrate 2 does not need to be removed, a reduction in the number of photodiodes can be suppressed.
摘要翻译： 第一半导体衬底1和第二半导体衬底2的材料不同，因此具有对相互不同波长带的入射光的灵敏度。 光电二极管阵列的各个光电二极管连接到第一半导体衬底1的放大器。根据该方法，通过蚀刻第二半导体衬底2然后对蚀刻槽的最深部分进行切割，将第二半导体衬底2与晶片分离。 通过蚀刻产生的侧面中的晶体缺陷的密度小于通过切割产生的侧面中的晶体缺陷的密度。 由于不需要去除位于第二半导体基板2的端部的光电二极管，因此可以抑制光电二极管的数量的减少。
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公开(公告)号：US20120187517A1
公开(公告)日：2012-07-26
申请号：US13383282
申请日：2010-07-07
IPC分类号： H01L27/144
CPC分类号： G01J3/36 , G01J1/0204 , G01J5/045 , H01L24/01 , H01L25/043 , H01L2924/0002 , H01L2924/12043 , H01L2924/00
摘要： In a photodetector 1, a low-resistance Si substrate 3, an insulating layer 4, a high-resistance Si substrate 5, and an Si photodiode 20 construct a hermetically sealed package for an InGaAs photodiode 30 placed within a recess 6, while an electric passage part 8 of the low-resistance Si substrate 3 and a wiring film 15 achieve electric wiring for the Si photodiode 20 and InGaAs photodiode 30. While a p-type region 22 of the Si photodiode 20 is disposed in a part on the rear face 21b side of an Si substrate 21, a p-type region 32 of the InGaAs photodiode 30 is disposed in a part on the front face 31a side of an InGaAs substrate 31.
摘要翻译： 在光检测器1中，低电阻Si衬底3，绝缘层4，高电阻Si衬底5和Si光电二极管20构成用于放置在凹槽6内的InGaAs光电二极管30的密封封装，同时电 低电阻Si衬底3的通道部分8和布线膜15实现用于Si光电二极管20和InGaAs光电二极管30的电布线。尽管Si光电二极管20的p型区域22设置在后面的部分 21b侧，在InGaAs基板31的正面31a侧的一部分配置有InGaAs光电二极管30的p型区域32。
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6.发明授权Photodetector for detecting energy line in a first wavelength region and in a second wavelength region 有权光检测器，用于检测第一波长区域和第二波长区域中的能量线公开(公告)号：US08564036B2
公开(公告)日：2013-10-22
申请号：US13383282
申请日：2010-07-07
IPC分类号： H01L31/0232
CPC分类号： G01J3/36 , G01J1/0204 , G01J5/045 , H01L24/01 , H01L25/043 , H01L2924/0002 , H01L2924/12043 , H01L2924/00
摘要： In a photodetector 1, a low-resistance Si substrate 3, an insulating layer 4, a high-resistance Si substrate 5, and an Si photodiode 20 construct a hermetically sealed package for an InGaAs photodiode 30 placed within a recess 6, while an electric passage part 8 of the low-resistance Si substrate 3 and a wiring film 15 achieve electric wiring for the Si photodiode 20 and InGaAs photodiode 30. While a p-type region 22 of the Si photodiode 20 is disposed in a part on the rear face 21b side of an Si substrate 21, a p-type region 32 of the InGaAs photodiode 30 is disposed in a part on the front face 31a side of an InGaAs substrate 31.
摘要翻译： 在光检测器1中，低电阻Si衬底3，绝缘层4，高电阻Si衬底5和Si光电二极管20构成用于放置在凹槽6内的InGaAs光电二极管30的密封封装，同时电 低电阻Si衬底3的通道部分8和布线膜15实现用于Si光电二极管20和InGaAs光电二极管30的电布线。尽管Si光电二极管20的p型区域22设置在后面的部分 21b侧，在InGaAs基板31的正面31a侧的一部分配置有InGaAs光电二极管30的p型区域32。
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公开(公告)号：US08994041B2
公开(公告)日：2015-03-31
申请号：US14006506
申请日：2012-03-27
申请人： Masatoshi Ishihara , Nao Inoue , Hirokazu Yamamoto
发明人： Masatoshi Ishihara , Nao Inoue , Hirokazu Yamamoto
IPC分类号： H01L29/18 , H01L33/00 , H01L27/146 , H01L25/16 , H04N1/03
CPC分类号： H01L27/14645 , H01L25/167 , H01L27/14634 , H01L27/14694 , H01L2224/16225 , H01L2924/0002 , H04N1/03 , H01L2924/00
摘要： This photodiode array module includes a first semiconductor substrate 2 having a first photodiode array that is sensitive to light of a first wavelength band, a second semiconductor substrate 2′ having a second photodiode array that is sensitive to light of a second wavelength band, and a third semiconductor substrate 3 which is formed with a plurality of amplifiers AMP and on which the first and second semiconductor substrates 2, 2′ are placed side by side without overlapping, and which connects each photodiode to the amplifier AMP via a bump. In adjacent end portions of the first semiconductor substrate 2 and the second semiconductor substrate 2′, stepped portions are formed, which thus allows performing measurement with low noise even when respective pixels are aligned successively over both substrates.
摘要翻译： 该光电二极管阵列模块包括具有对第一波长带的光敏感的第一光电二极管阵列的第一半导体基板2，具有对第二波长带的光敏感的第二光电二极管阵列的第二半导体基板2' 第三半导体衬底3，其形成有多个放大器AMP，并且第一和第二半导体衬底2,2'并排放置在其上而不重叠，并且通过凸块将每个光电二极管连接到放大器AMP。 在第一半导体衬底2和第二半导体衬底2'的相邻端部中，形成阶梯部分，因此即使当各个像素在两个衬底上连续排列时，也能够以低噪声进行测量。
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公开(公告)号：US20140021575A1
公开(公告)日：2014-01-23
申请号：US14006506
申请日：2012-03-27
申请人： Masatoshi Ishihara , Nao Inoue , Hirokazu Yamamoto
发明人： Masatoshi Ishihara , Nao Inoue , Hirokazu Yamamoto
IPC分类号： H01L27/146
CPC分类号： H01L27/14645 , H01L25/167 , H01L27/14634 , H01L27/14694 , H01L2224/16225 , H01L2924/0002 , H04N1/03 , H01L2924/00
摘要： This photodiode array module includes a first semiconductor substrate 2 having a first photodiode array that is sensitive to light of a first wavelength band, a second semiconductor substrate 2′ having a second photodiode array that is sensitive to light of a second wavelength band, and a third semiconductor substrate 3 which is formed with a plurality of amplifiers AMP and on which the first and second semiconductor substrates 2, 2′ are placed side by side without overlapping, and which connects each photodiode to the amplifier AMP via a bump. In adjacent end portions of the first semiconductor substrate 2 and the second semiconductor substrate 2′, stepped portions are formed, which thus allows performing measurement with low noise even when respective pixels are aligned successively over both substrates.
摘要翻译： 该光电二极管阵列模块包括具有对第一波长带的光敏感的第一光电二极管阵列的第一半导体基板2，具有对第二波长带的光敏感的第二光电二极管阵列的第二半导体基板2' 第三半导体衬底3，其形成有多个放大器AMP，并且第一和第二半导体衬底2,2'并排放置在其上而不重叠，并且通过凸块将每个光电二极管连接到放大器AMP。 在第一半导体衬底2和第二半导体衬底2'的相邻端部中，形成阶梯部分，因此即使当各个像素在两个衬底上连续排列时，也能够以低噪声进行测量。
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公开(公告)号：US20140008754A1
公开(公告)日：2014-01-09
申请号：US14005872
申请日：2012-03-27
申请人： Masatoshi Ishihara , Nao Inoue , Hirokazu Yamamoto
发明人： Masatoshi Ishihara , Nao Inoue , Hirokazu Yamamoto
IPC分类号： H01L27/146
CPC分类号： H01L27/14609 , H01L27/146 , H01L27/14634 , H01L27/14694 , H01L2224/16135 , H01L2224/16148 , H01L2224/73204 , H04N1/03
摘要： A first semiconductor substrate 1 and a second semiconductor substrate 2 are different in material, and therefore have sensitivities to incident light of mutually different wavelength bands. Respective photodiodes of photodiode arrays are connected to amplifiers of the first semiconductor substrate 1. According to this method, the second semiconductor substrate 2 is separated from the wafer by etching the second semiconductor substrate 2 and then dicing a deepest portion of the etched groove. The density of crystal defects in a side surface produced by etching is smaller than the density of crystal defects in a side surface produced by dicing. Because a photodiode located in an end portion of the second semiconductor substrate 2 does not need to be removed, a reduction in the number of photodiodes can be suppressed.
摘要翻译： 第一半导体衬底1和第二半导体衬底2的材料不同，因此具有对相互不同波长带的入射光的灵敏度。 光电二极管阵列的各个光电二极管连接到第一半导体衬底1的放大器。根据该方法，通过蚀刻第二半导体衬底2然后对蚀刻槽的最深部分进行切割，将第二半导体衬底2与晶片分离。 通过蚀刻产生的侧面中的晶体缺陷的密度小于通过切割产生的侧面中的晶体缺陷的密度。 由于不需要去除位于第二半导体基板2的端部的光电二极管，因此可以抑制光电二极管的数量的减少。
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