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公开(公告)号：US08969900B2
公开(公告)日：2015-03-03
申请号：US13883346
申请日：2011-11-02
CPC分类号： H01L33/02 , B82Y40/00 , H01L33/08 , H01L33/20 , H01L33/24 , H01L33/42 , H01L33/501 , H01L33/505 , H01L33/508 , H01L2933/0041 , H01L2933/0083
摘要： An optoelectronic semiconductor chip includes a semiconductor layer stack having an active layer that generates radiation, and a radiation emission side, and a conversion layer disposed on the radiation emission side of the semiconductor layer stack, wherein the conversion layer converts at least a portion of the radiation, which is emitted by the active layer, into radiation of a different wavelength, the radiation emission side of the semiconductor layer stack has a first nanostructuring, and the conversion layer is disposed in this first nanostructuring.
摘要翻译： 光电子半导体芯片包括具有产生辐射的有源层和辐射发射侧的半导体层堆叠和设置在半导体层堆叠的辐射发射侧的转换层，其中转换层将至少一部分 由有源层发射的辐射成为不同波长的辐射，半导体层堆叠的辐射发射侧具有第一纳米结构，并且转换层设置在该第一纳米结构中。
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公开(公告)号：US20130328066A1
公开(公告)日：2013-12-12
申请号：US13883346
申请日：2011-11-02
申请人： Matthias Sabathil , Alexander Linkov , Christopher Kölper , Martin Strassburg , Norwin von Malm
发明人： Matthias Sabathil , Alexander Linkov , Christopher Kölper , Martin Strassburg , Norwin von Malm
IPC分类号： H01L33/02
CPC分类号： H01L33/02 , B82Y40/00 , H01L33/08 , H01L33/20 , H01L33/24 , H01L33/42 , H01L33/501 , H01L33/505 , H01L33/508 , H01L2933/0041 , H01L2933/0083
摘要： An optoelectronic semiconductor chip includes a semiconductor layer stack having an active layer that generates radiation, and a radiation emission side, and a conversion layer disposed on the radiation emission side of the semiconductor layer stack, wherein the conversion layer converts at least a portion of the radiation, which is emitted by the active layer, into radiation of a different wavelength, the radiation emission side of the semiconductor layer stack has a first nanostructuring, and the conversion layer is disposed in this first nanostructuring.
摘要翻译： 光电子半导体芯片包括具有产生辐射的有源层和辐射发射侧的半导体层堆叠和设置在半导体层堆叠的辐射发射侧的转换层，其中转换层将至少一部分 由有源层发射的辐射成为不同波长的辐射，半导体层堆叠的辐射发射侧具有第一纳米结构，并且转换层设置在该第一纳米结构中。
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公开(公告)号：US08884311B2
公开(公告)日：2014-11-11
申请号：US13696602
申请日：2011-04-29
申请人： Werner Bergbauer , Lutz Höppel , Philipp Drechsel , Christopher Kölper , Martin Straβburg , Patrick Rode
发明人： Werner Bergbauer , Lutz Höppel , Philipp Drechsel , Christopher Kölper , Martin Straβburg , Patrick Rode
IPC分类号： H01L31/02 , H01L31/18 , H01L31/0236 , H01L33/02 , H01L33/22 , H01L31/0232 , H01L33/12 , H01L33/00 , H01L33/24
CPC分类号： H01L33/02 , H01L31/02 , H01L31/02327 , H01L31/02363 , H01L31/18 , H01L33/0079 , H01L33/12 , H01L33/22 , H01L33/24 , Y02E10/50
摘要： An optoelectronic semiconductor chip includes a semiconductor layer stack and a radiation exit face or radiation entrance face, wherein the semiconductor layer stack includes an active layer that generates or receives electromagnetic radiation, and a plurality of nanostructures arranged in the semiconductor layer stack and/or on the radiation exit or entrance face, at least some of the nanostructures including at least one substructure.
摘要翻译： 光电子半导体芯片包括半导体层堆叠和辐射出射面或辐射入射面，其中半导体层堆叠包括产生或接收电磁辐射的有源层，和布置在半导体层堆叠中和/或之上的多个纳米结构 辐射出口或入射面，至少一些纳米结构包括至少一个子结构。
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公开(公告)号：US20130193450A1
公开(公告)日：2013-08-01
申请号：US13696602
申请日：2011-04-29
申请人： Werner Bergbauer , Lutz Höppel , Philipp Drechsel , Christopher Kölper , Martin Strassburg , Patrick Rode
发明人： Werner Bergbauer , Lutz Höppel , Philipp Drechsel , Christopher Kölper , Martin Strassburg , Patrick Rode
CPC分类号： H01L33/02 , H01L31/02 , H01L31/02327 , H01L31/02363 , H01L31/18 , H01L33/0079 , H01L33/12 , H01L33/22 , H01L33/24 , Y02E10/50
摘要： An optoelectronic semiconductor chip includes a semiconductor layer stack and a radiation exit face or radiation entrance face, wherein the semiconductor layer stack includes an active layer that generates or receives electromagnetic radiation, and a plurality of nanostructures arranged in the semiconductor layer stack and/or on the radiation exit or entrance face, at least some of the nanostructures including at least one substructure.
摘要翻译： 光电子半导体芯片包括半导体层堆叠和辐射出射面或辐射入射面，其中半导体层堆叠包括产生或接收电磁辐射的有源层，和布置在半导体层堆叠中和/或之上的多个纳米结构 辐射出口或入射面，至少一些纳米结构包括至少一个子结构。
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