公开(公告)号：US20130278372A1

公开(公告)日：2013-10-24

申请号：US13452075

申请日：2012-04-20

申请人： Matthias Stecher ,  Markus Menath ,  Andreas Zankl ,  Werner Robl

发明人： Matthias Stecher ,  Markus Menath ,  Andreas Zankl ,  Werner Robl

IPC分类号： H01F5/00

CPC分类号： H01L28/10 ,  H01F27/2804 ,  H01F2017/0086 ,  H01L23/5225 ,  H01L23/5227 ,  H01L23/62 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor component has integrated a coreless transformer with a first connection contact, a second connection contact, an electrically conductive spiral first coil, an electrically conductive first ring, and an electrically conductive second ring. The electrically conductive spiral first coil is electrically connected between the first connection contact and the second connection contact. The electrically conductive first ring surrounds the first coil and one or both of the first connection contact and the second connection contact. The electrically conductive second ring is arranged between the first coil and the first ring, electrically connected to the first coil, and surrounds the first coil and one or both of the first connection contact and the second connection contact.

摘要翻译： 半导体部件集成了无芯变压器与第一连接触点，第二连接触点，导电螺旋第一线圈，导电第一环和导电第二环。 导电螺旋第一线圈电连接在第一连接触点和第二连接触点之间。 导电的第一环围绕第一线圈和第一连接触点和第二连接触点中的一个或两个。 导电的第二环被布置在第一线圈和第一环之间，电连接到第一线圈，并且包围第一线圈以及第一连接触点和第二连接触点中的一个或两者。

公开(公告)号：US08665054B2

公开(公告)日：2014-03-04

申请号：US13452075

申请日：2012-04-20

申请人： Matthias Stecher ,  Markus Menath ,  Andreas Zankl ,  Werner Robl

发明人： Matthias Stecher ,  Markus Menath ,  Andreas Zankl ,  Werner Robl

IPC分类号： H01F5/00 ,  H01L27/08

CPC分类号： H01L28/10 ,  H01F27/2804 ,  H01F2017/0086 ,  H01L23/5225 ,  H01L23/5227 ,  H01L23/62 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor component has integrated a coreless transformer with a first connection contact, a second connection contact, an electrically conductive spiral first coil, an electrically conductive first ring, and an electrically conductive second ring. The electrically conductive spiral first coil is electrically connected between the first connection contact and the second connection contact. The electrically conductive first ring surrounds the first coil and one or both of the first connection contact and the second connection contact. The electrically conductive second ring is arranged between the first coil and the first ring, electrically connected to the first coil, and surrounds the first coil and one or both of the first connection contact and the second connection contact.

摘要翻译： 半导体部件集成了无芯变压器与第一连接触点，第二连接触点，导电螺旋第一线圈，导电第一环和导电第二环。 导电螺旋第一线圈电连接在第一连接触点和第二连接触点之间。 导电的第一环围绕第一线圈和第一连接触点和第二连接触点中的一个或两个。 导电的第二环被布置在第一线圈和第一环之间，电连接到第一线圈，并且包围第一线圈以及第一连接触点和第二连接触点中的一个或两者。

公开(公告)号：US09214424B2

公开(公告)日：2015-12-15

申请号：US13452044

申请日：2012-04-20

申请人： Matthias Stecher ,  Markus Menath ,  Andreas Zankl ,  Anja Gisslbl

发明人： Matthias Stecher ,  Markus Menath ,  Andreas Zankl ,  Anja Gisslbl

IPC分类号： H01L21/302 ,  H01L21/461 ,  H01L23/522 ,  H01L21/311 ,  H01L21/322 ,  H01L21/74 ,  H01L21/3115 ,  H01L23/528 ,  H01L23/532 ,  H01L21/768

CPC分类号： H01L21/76804 ,  H01L21/311 ,  H01L21/31144 ,  H01L21/3115 ,  H01L21/322 ,  H01L21/44 ,  H01L21/743 ,  H01L21/76802 ,  H01L23/5222 ,  H01L23/5225 ,  H01L23/5227 ,  H01L23/5283 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for producing a rounded conductor line of a semiconductor component is disclosed. In that method, a partially completed semiconductor component is provided. The partially completed semiconductor component has a bottom side and a top side spaced distant from the bottom side in a vertical direction. Also provided is an etchant. On the top side, a dielectric layer is arranged. The dielectric layer has at least two different regions that show different etch rates when they are etched with the etchant. Subsequently, a trench is formed in the dielectric layer such that the trench intersects each of the different regions. Then, the trench is widened by etching the trench with the etchant at different etch rates. By filling the widened trench with an electrically conductive material, a conductor line is formed.

摘要翻译： 公开了一种用于制造半导体部件的圆形导线的方法。 在该方法中，提供部分完成的半导体部件。 部分完成的半导体部件具有在垂直方向上与底侧间隔开的底侧和顶侧。 还提供了一种蚀刻剂。 在顶侧设置介电层。 介电层具有至少两个不同的区域，当蚀刻剂用蚀刻剂蚀刻时，其表现出不同的蚀刻速率。 随后，在电介质层中形成沟槽，使得沟槽与不同区域中的每一个相交。 然后，通过用不同蚀刻速率的蚀刻剂蚀刻沟槽来加宽沟槽。 通过用导电材料填充加宽的沟槽，形成导体线。

公开(公告)号：US20130280879A1

公开(公告)日：2013-10-24

申请号：US13452044

申请日：2012-04-20

申请人： Matthias Stecher ,  Markus Menath ,  Andreas Zankl ,  Anja Gissibl

发明人： Matthias Stecher ,  Markus Menath ,  Andreas Zankl ,  Anja Gissibl

IPC分类号： H01L21/02

CPC分类号： H01L21/76804 ,  H01L21/311 ,  H01L21/31144 ,  H01L21/3115 ,  H01L21/322 ,  H01L21/44 ,  H01L21/743 ,  H01L21/76802 ,  H01L23/5222 ,  H01L23/5225 ,  H01L23/5227 ,  H01L23/5283 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for producing a rounded conductor line of a semiconductor component is disclosed. In that method, a partially completed semiconductor component is provided. The partially completed semiconductor component has a bottom side and a top side spaced distant from the bottom side in a vertical direction. Also provided is an etchant. On the top side, a dielectric layer is arranged. The dielectric layer has at least two different regions that show different etch rates when they are etched with the etchant. Subsequently, a trench is formed in the dielectric layer such that the trench intersects each of the different regions. Then, the trench is widened by etching the trench with the etchant at different etch rates. By filling the widened trench with an electrically conductive material, a conductor line is formed.

摘要翻译： 公开了一种用于制造半导体部件的圆形导线的方法。 在该方法中，提供部分完成的半导体部件。 部分完成的半导体部件具有在垂直方向上与底侧间隔开的底侧和顶侧。 还提供了一种蚀刻剂。 在顶侧设置介电层。 介电层具有至少两个不同的区域，当蚀刻剂用蚀刻剂蚀刻时，其表现出不同的蚀刻速率。 随后，在电介质层中形成沟槽，使得沟槽与不同区域中的每一个相交。 然后，通过用不同蚀刻速率的蚀刻剂蚀刻沟槽来加宽沟槽。 通过用导电材料填充加宽的沟槽，形成导体线。

公开(公告)号：US20120211805A1

公开(公告)日：2012-08-23

申请号：US13032334

申请日：2011-02-22

申请人： Bernhard Winkler ,  Andreas Zankl ,  Klemens Pruegl ,  Stefan Kolb

发明人： Bernhard Winkler ,  Andreas Zankl ,  Klemens Pruegl ,  Stefan Kolb

IPC分类号： H01L29/84 ,  H01L21/02

CPC分类号： B81B7/008 ,  B81B2201/0264 ,  B81B2203/0315 ,  B81B2207/015 ,  B81C1/00158 ,  B81C1/00246 ,  B81C2203/0707 ,  B81C2203/0714 ,  B81C2203/0735 ,  B81C2203/0771 ,  H01L27/0611

摘要： Embodiments relate to MEMS devices, particularly MEMS devices integrated with related electrical devices on a single wafer. Embodiments utilize a modular process flow concept as part of a MEMS-first approach, enabling use of a novel cavity sealing process. The impact and potential detrimental effects on the electrical devices by the MEMS processing are thereby reduced or eliminated. At the same time, a highly flexible solution is provided that enables implementation of a variety of measurement principles, including capacitive and piezoresistive. A variety of sensor applications can therefore be addressed with improved performance and quality while remaining cost-effective.

摘要翻译： 实施例涉及MEMS器件，特别是与单个晶片上的相关电气器件集成的MEMS器件。 实施例利用模块化工艺流程概念作为MEMS首要方法的一部分，使得能够使用新颖的腔体密封过程。 因此，通过MEMS处理对电气装置的影响和潜在的有害影响被减少或消除。 同时，提供了一种高度灵活的解决方案，可以实现各种测量原理，包括电容式和压阻式。 因此，可以在提高性能和质量的同时解决各种传感器应用，同时保持成本效益。