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公开(公告)号：US20230238469A1
公开(公告)日：2023-07-27
申请号：US18114119
申请日：2023-02-24
发明人： Matthieu Moors , DAVID D. SMITH , GABRIEL HARLEY , TAESEOK KIM
IPC分类号： H01L31/061 , H01L31/18 , H01L31/0224 , H01L31/0216 , H01L31/068
CPC分类号： H01L31/061 , H01L31/068 , H01L31/1864 , H01L31/02167 , H01L31/022425 , Y02E10/547
摘要： A method of fabricating a solar cell is disclosed. The method can include forming a dielectric region on a surface of a solar cell structure and forming a metal layer on the dielectric layer. The method can also include configuring a laser beam with a particular shape and directing the laser beam with the particular shape on the metal layer, where the particular shape allows a contact to be formed between the metal layer and the solar cell structure.
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公开(公告)号：US20240250201A1
公开(公告)日：2024-07-25
申请号：US18586315
申请日：2024-02-23
发明人： PEI HSUAN LU , BENJAMIN I. HSIA , TAESEOK KIM
IPC分类号： H01L31/18 , B23K26/382 , H01L31/0216 , H01L31/0224 , H01L31/0236
CPC分类号： H01L31/18 , B23K26/382 , H01L31/022441 , H01L31/02168 , H01L31/02363 , H01L31/1804
摘要： Local patterning and metallization of semiconductor structures using a laser beam, e.g., micro-electronic devices, semiconductor substrates and/or solar cells, are described. For example, a method of fabricating a solar cell includes providing a substrate having an intervening layer thereon. The method also includes locating a metal foil over the intervening layer. The method also includes exposing the metal foil to a laser beam, wherein exposing the metal foil to the laser beam forms openings in the intervening layer and forms a plurality of conductive contact structures electrically connected to portions of the substrate exposed by the openings.
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公开(公告)号：US20240222534A1
公开(公告)日：2024-07-04
申请号：US18608788
申请日：2024-03-18
发明人： GABRIEL HARLEY , TAESEOK KIM , RICHARD HAMILTON SEWELL , MICHAEL MORSE , DAVID D. SMITH , MATTHIEU MOORS , JENS-DIRK MOSCHNER
IPC分类号： H01L31/0224 , H01L31/0236 , H01L31/028 , H01L31/0475 , H01L31/05 , H01L31/068 , H01L31/0745
CPC分类号： H01L31/02245 , H01L31/022441 , H01L31/02363 , H01L31/028 , H01L31/0475 , H01L31/0512 , H01L31/0516 , H01L31/0682 , H01L31/0745 , Y02E10/50 , Y02E10/547 , Y02P70/50
摘要： Approaches for the foil-based metallization of solar cells and the resulting solar cells are described. In an example, a solar cell includes a substrate. A plurality of alternating N-type and P-type semiconductor regions is disposed in or above the substrate. A conductive contact structure is disposed above the plurality of alternating N-type and P-type semiconductor regions. The conductive contact structure includes a plurality of metal seed material regions providing a metal seed material region disposed on each of the alternating N-type and P-type semiconductor regions. A metal foil is disposed on the plurality of metal seed material regions, the metal foil having anodized portions isolating metal regions of the metal foil corresponding to the alternating N-type and P-type semiconductor regions.
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公开(公告)号：US20240088317A1
公开(公告)日：2024-03-14
申请号：US18513256
申请日：2023-11-17
发明人： RICHARD HAMILTON SEWELL , DAVID FREDRIC JOEL KAVULAK , LEWIS ABRA , THOMAS P. PASS , TAESEOK KIM , MATTHIEU MOORS , BENJAMIN IAN HSIA , GABRIEL HARLEY
IPC分类号： H01L31/05 , H01L31/0224 , H01L31/068
CPC分类号： H01L31/0516 , H01L31/022441 , H01L31/022458 , H01L31/05 , H01L31/0504 , H01L31/0508 , H01L31/0682 , Y02E10/50 , Y02E10/546 , Y02E10/547
摘要： Approaches for fabricating one-dimensional metallization for solar cells, and the resulting solar cells, are described. In an example, a solar cell includes a substrate having a back surface and an opposing light-receiving surface. A plurality of alternating N-type and P-type semiconductor regions is disposed in or above the back surface of the substrate and parallel along a first direction to form a one-dimensional layout of emitter regions for the solar cell. A conductive contact structure is disposed on the plurality of alternating N-type and P-type semiconductor regions. The conductive contact structure includes a plurality of metal lines corresponding to the plurality of alternating N-type and P-type semiconductor regions. The plurality of metal lines is parallel along the first direction to form a one-dimensional layout of a metallization layer for the solar cell.
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