公开(公告)号：US20240222534A1

公开(公告)日：2024-07-04

申请号：US18608788

申请日：2024-03-18

申请人： Maxeon Solar Pte. Ltd.

发明人： GABRIEL HARLEY ,  TAESEOK KIM ,  RICHARD HAMILTON SEWELL ,  MICHAEL MORSE ,  DAVID D. SMITH ,  MATTHIEU MOORS ,  JENS-DIRK MOSCHNER

IPC分类号： H01L31/0224 ,  H01L31/0236 ,  H01L31/028 ,  H01L31/0475 ,  H01L31/05 ,  H01L31/068 ,  H01L31/0745

CPC分类号： H01L31/02245 ,  H01L31/022441 ,  H01L31/02363 ,  H01L31/028 ,  H01L31/0475 ,  H01L31/0512 ,  H01L31/0516 ,  H01L31/0682 ,  H01L31/0745 ,  Y02E10/50 ,  Y02E10/547 ,  Y02P70/50

摘要： Approaches for the foil-based metallization of solar cells and the resulting solar cells are described. In an example, a solar cell includes a substrate. A plurality of alternating N-type and P-type semiconductor regions is disposed in or above the substrate. A conductive contact structure is disposed above the plurality of alternating N-type and P-type semiconductor regions. The conductive contact structure includes a plurality of metal seed material regions providing a metal seed material region disposed on each of the alternating N-type and P-type semiconductor regions. A metal foil is disposed on the plurality of metal seed material regions, the metal foil having anodized portions isolating metal regions of the metal foil corresponding to the alternating N-type and P-type semiconductor regions.

公开(公告)号：US20240186430A1

公开(公告)日：2024-06-06

申请号：US18439522

申请日：2024-02-12

申请人： Maxeon Solar Pte. Ltd.

发明人： KIERAN MARK TRACY ,  DAVID D. SMITH ,  VENKATASUBRAMANI BALU ,  ASNAT MASAD ,  ANN WALDHAUER

IPC分类号： H01L31/0224 ,  H01L31/0236 ,  H01L31/0352 ,  H01L31/05 ,  H01L31/068 ,  H01L31/0745 ,  H01L31/0747 ,  H01L31/18 ,  H01L31/20

CPC分类号： H01L31/022441 ,  H01L31/022425 ,  H01L31/022458 ,  H01L31/02363 ,  H01L31/035281 ,  H01L31/0516 ,  H01L31/0682 ,  H01L31/0745 ,  H01L31/0747 ,  H01L31/18 ,  H01L31/1804 ,  H01L31/202 ,  Y02E10/50 ,  Y02E10/546 ,  Y02E10/547 ,  Y02E10/548

摘要： Tri-layer semiconductor stacks for patterning features on solar cells, and the resulting solar cells, are described herein. In an example, a solar cell includes a substrate. A semiconductor structure is disposed above the substrate. The semiconductor structure includes a P-type semiconductor layer disposed directly on a first semiconductor layer. A third semiconductor layer is disposed directly on the P-type semiconductor layer. An outermost edge of the third semiconductor layer is laterally recessed from an outermost edge of the first semiconductor layer by a width. An outermost edge of the P-type semiconductor layer is sloped from the outermost edge of the third semiconductor layer to the outermost edge of the third semiconductor layer. A conductive contact structure is electrically connected to the semiconductor structure.

公开(公告)号：US20230238469A1

公开(公告)日：2023-07-27

申请号：US18114119

申请日：2023-02-24

申请人： Maxeon Solar Pte. Ltd.

发明人： Matthieu Moors ,  DAVID D. SMITH ,  GABRIEL HARLEY ,  TAESEOK KIM

IPC分类号： H01L31/061 ,  H01L31/18 ,  H01L31/0224 ,  H01L31/0216 ,  H01L31/068

CPC分类号： H01L31/061 ,  H01L31/068 ,  H01L31/1864 ,  H01L31/02167 ,  H01L31/022425 ,  Y02E10/547

摘要： A method of fabricating a solar cell is disclosed. The method can include forming a dielectric region on a surface of a solar cell structure and forming a metal layer on the dielectric layer. The method can also include configuring a laser beam with a particular shape and directing the laser beam with the particular shape on the metal layer, where the particular shape allows a contact to be formed between the metal layer and the solar cell structure.