公开(公告)号：US06500605B1

公开(公告)日：2002-12-31

申请号：US09697227

申请日：2000-10-25

申请人： William H. Mullee ,  Maximilian A. Biberger ,  Paul E. Schilling

发明人： William H. Mullee ,  Maximilian A. Biberger ,  Paul E. Schilling

IPC分类号： G03F742

CPC分类号： H01L21/02071 ,  B08B7/0021 ,  G03F7/422 ,  G03F7/425 ,  H01L21/02063 ,  H01L21/02101 ,  H01L21/31133

摘要： A method of removing photoresist and residue from a substrate begins by maintaining supercritical carbon dioxide, an amine, and a solvent in contact with the substrate so that the amine and the solvent at least partially dissolve the photoresist and the residue. Preferably, the amine is a tertiary amine. Preferably, the solvent is selected from the group consisting of DMSO, EC, NMP, acetyl acetone, BLO, acetic acid, DMAC, PC, and a mixture thereof. Next, the photoresist and the residue are removed from the vicinity of the substrate. Preferably, the method continues with a rinsing step in which the substrate is rinsed in the supercritical carbon dioxide and a rinse agent. Preferably, the rinse agent is selected from the group consisting of water, alcohol, a mixture thereof, and acetone. In an alternative embodiment, the amine and the solvent are replaced with an aqueous fluoride.

摘要翻译： 从基材上除去光致抗蚀剂和残留物的方法开始于保持超临界二氧化碳，胺和与基材接触的溶剂，使得胺和溶剂至少部分地溶解光致抗蚀剂和残余物。 优选地，胺是叔胺。 优选地，溶剂选自DMSO，EC，NMP，乙酰丙酮，BLO，乙酸，DMAC，PC及其混合物。 接下来，从基板附近去除光致抗蚀剂和残留物。 优选地，该方法继续进行漂洗步骤，其中在超临界二氧化碳和漂洗剂中漂洗基材。 优选地，漂洗剂选自水，醇，其混合物和丙酮。 在替代实施方案中，胺和溶剂被氟化物水溶液代替。

公开(公告)号：US07208411B2

公开(公告)日：2007-04-24

申请号：US10870871

申请日：2004-06-16

申请人： Maximilian A. Biberger ,  Paul E. Schilling

发明人： Maximilian A. Biberger ,  Paul E. Schilling

IPC分类号： H01L21/44

CPC分类号： H01L21/67167 ,  C23C14/021 ,  C23C16/0227 ,  H01L21/02063 ,  H01L21/02101 ,  H01L21/28556 ,  H01L21/67028 ,  H01L21/67184 ,  H01L21/67207 ,  H01L21/76814 ,  Y10S438/906

摘要： A method of depositing a metal film on a substrate includes a supercritical preclean step, a supercritical desorb step, and a metal deposition step. Preferably, the preclean step comprises maintaining supercritical carbon dioxide and a chelating agent in contact with the substrate in order to remove an oxide layer from a metal surface of the substrate. More preferably, the preclean step comprises maintaining the supercritical carbon dioxide, the chelating agent, and an acid in contact with the substrate. Alternatively, the preclean step comprises maintaining the supercritical carbon dioxide and an amine in contact with the oxide layer. The desorb step comprises maintaining supercritical carbon dioxide in contact with the substrate in order to remove adsorbed material from the substrate. The metal deposition step then deposits the metal film on the substrate without exposing the substrate to an oxidizing material which oxidizes the metal surface of the precleaned substrate and without exposing the substrate to a nonvolatile adsorbing material which adsorbs to the substrate. An apparatus for depositing the metal film on a substrate includes a transfer module, a supercritical processing module, a vacuum module, and a metal deposition module. The supercritical processing module is coupled to the transfer module. The vacuum module couples the metal deposition module to the transfer module. In operation, the apparatus for depositing the metal film performs the supercritical preclean step, the supercritical desorb step, and the metal deposition step.

摘要翻译： 在基板上沉积金属膜的方法包括超临界预清洗步骤，超临界解吸步骤和金属沉积步骤。 优选地，预清洗步骤包括保持超临界二氧化碳和螯合剂与基底接触，以从基底的金属表面除去氧化物层。 更优选地，预清洗步骤包括保持超临界二氧化碳，螯合剂和与基底接触的酸。 或者，预清洗步骤包括保持超临界二氧化碳和胺与氧化物层接触。 解吸步骤包括保持超临界二氧化碳与基底接触，以从基底去除吸附的材料。 金属沉积步骤然后将金属膜沉积在基板上，而不将基板暴露于氧化材料，氧化材料氧化预先清洗的基板的金属表面，而不将基板暴露于吸附于基板上的不挥发性吸附材料。 用于将金属膜沉积在基板上的装置包括转印模块，超临界处理模块，真空模块和金属沉积模块。 超临界处理模块耦合到传送模块。 真空模块将金属沉积模块耦合到转移模块。 在操作中，用于沉积金属膜的装置执行超临界预清洗步骤，超临界解吸步骤和金属沉积步骤。

公开(公告)号：US06890853B2

公开(公告)日：2005-05-10

申请号：US09841800

申请日：2001-04-24

申请人： Maximilian A. Biberger ,  Paul E. Schilling

发明人： Maximilian A. Biberger ,  Paul E. Schilling

IPC分类号： H01L21/28 ,  C23C14/02 ,  C23C16/02 ,  H01L21/00 ,  H01L21/02 ,  H01L21/027 ,  H01L21/285 ,  H01L21/304 ,  H01L21/308 ,  H01L21/768 ,  H01L21/44

CPC分类号： H01L21/67167 ,  C23C14/021 ,  C23C16/0227 ,  H01L21/02063 ,  H01L21/02101 ,  H01L21/28556 ,  H01L21/67028 ,  H01L21/67184 ,  H01L21/67207 ,  H01L21/76814 ,  Y10S438/906

摘要： A method of depositing a metal film on a substrate includes a supercritical preclean step, a supercritical desorb step, and a metal deposition step. Preferably, the preclean step includes maintaining supercritical carbon dioxide and a chelating agent in contact with the substrate in order to remove an oxide layer from a metal surface of the substrate. More preferably, the preclean step includes maintaining the supercritical carbon dioxide, the chelating agent, and an acid in contact with the substrate. Alternatively, the preclean step includes maintaining the supercritical carbon dioxide and an amine in contact with the oxide layer. The desorb step includes maintaining supercritical carbon dioxide in contact with the substrate in order to remove adsorbed material from the substrate. The metal deposition step then deposits the metal film on the substrate without exposing the substrate to an oxidizing material which oxidizes the metal surface of the precleaned substrate and without exposing the substrate to a nonvolatile adsorbing material which adsorbs to the substrate. An apparatus for depositing the metal film on a substrate includes a transfer module, a supercritical processing module, a vacuum module, and a metal deposition module. The supercritical processing module is coupled to the transfer module. The vacuum module couples the metal deposition module to the transfer module. In operation, the apparatus for depositing the metal film performs the supercritical preclean step, the supercritical desorb step, and the metal deposition step.

摘要翻译： 在基板上沉积金属膜的方法包括超临界预清洗步骤，超临界解吸步骤和金属沉积步骤。 优选地，预清洗步骤包括保持与基材接触的超临界二氧化碳和螯合剂以从基材的金属表面除去氧化物层。 更优选地，预清洗步骤包括保持超临界二氧化碳，螯合剂和与基底接触的酸。 或者，预清洗步骤包括保持超临界二氧化碳和胺与氧化物层接触。 解吸步骤包括保持与基材接触的超临界二氧化碳以从基材中除去吸附的材料。 金属沉积步骤然后将金属膜沉积在基板上，而不将基板暴露于氧化材料，氧化材料氧化预先清洗的基板的金属表面，而不将基板暴露于吸附于基板上的不挥发性吸附材料。 用于将金属膜沉积在基板上的装置包括转印模块，超临界处理模块，真空模块和金属沉积模块。 超临界处理模块耦合到传送模块。 真空模块将金属沉积模块耦合到转移模块。 在操作中，用于沉积金属膜的装置执行超临界预清洗步骤，超临界解吸步骤和金属沉积步骤。

公开(公告)号：US06270395B1

公开(公告)日：2001-08-07

申请号：US09160514

申请日：1998-09-24

申请人： Daniel L. Towery ,  Neil H. Hendricks ,  Paul E. Schilling ,  Tian-An Chen

发明人： Daniel L. Towery ,  Neil H. Hendricks ,  Paul E. Schilling ,  Tian-An Chen

IPC分类号： B24G100

CPC分类号： H01L21/31053 ,  C09G1/02 ,  C09K3/1409 ,  C09K3/1436 ,  C09K3/1463 ,  Y10S977/775 ,  Y10S977/776 ,  Y10S977/888

摘要： An oxidizing slurry for removal of low dielectric constant materials. The slurry is formed utilizing non-oxidizing particles with a separate oxidizing agent, oxidizing particles alone or reducible abrasive particles with a compatible oxidizing agent. The particles can be formed of a metal oxide, nitride, or carbide material, by itself or mixtures thereof, or can be coated on a core material such as silicon dioxide or can be coformed therewith. A preferred oxidizing slurry is multi-modal in particle size distribution. Although developed for utilization in CMP semiconductor processing the oxidizing slurry of the present invention also can be utilized for other high precision polishing processes.

摘要翻译： 用于去除低介电常数材料的氧化浆料。 使用具有单独氧化剂的非氧化性颗粒，单独氧化颗粒或用可相容的氧化剂可还原的磨料颗粒形成浆料。 颗粒可以由金属氧化物，氮化物或碳化物材料本身或其混合物形成，或者可以涂覆在诸如二氧化硅的芯材料上，或者可以与其共形。 优选的氧化浆料是粒径分布的多模态。 虽然开发用于CMP半导体处理中的本发明的氧化浆料也可用于其它高精度抛光工艺。

公开(公告)号：US06124421A

公开(公告)日：2000-09-26

申请号：US990157

申请日：1997-12-12

申请人： Kreisler S. Y. Lau ,  Tian-An Chen ,  Boris A. Korolev ,  Emma Brouk ,  Paul E. Schilling ,  Heike W. Thompson

发明人： Kreisler S. Y. Lau ,  Tian-An Chen ,  Boris A. Korolev ,  Emma Brouk ,  Paul E. Schilling ,  Heike W. Thompson

IPC分类号： C08G65/40 ,  H01L23/498 ,  H01L23/532 ,  H05K1/03 ,  C08G79/02

CPC分类号： H01L23/5329 ,  C08G65/40 ,  C08G65/4006 ,  C08G65/4012 ,  C08G65/4025 ,  H01L23/49894 ,  C08G2650/48 ,  C08L2203/20 ,  H01L2924/0002 ,  H01L2924/12044 ,  H05K1/0326

摘要： Dielectric compositions encompassing one or more poly(arylene ether) polymers are provided. The dielectric compositions have the repetitive structural unit: ##STR1## where n=0 to 1; m=0 to 1-n; and Y.sub.1, Y.sub.2, Ar.sub.1 and Ar.sub.2 are each a divalent arylene radical, Y.sub.1 and Y.sub.2 derived from biphenol compounds, Ar.sub.1 derived from difluoroarylethynes and Ar.sub.2 derived from difluoroaryl compounds. Where both Y.sub.1 and Y.sub.2 are derived from fluorene bisphenol, n=0.1 to 1. Such poly(arylene ether) polymers are employed with a variety of microelectronic devices, for example, integrated circuits and multichip modules.

摘要翻译： 提供包含一种或多种聚（亚芳基醚）聚合物的介电组合物。 电介质组合物具有重复的结构单元：其中n = 0至1; m = 0〜1-n; Y1，Y2，Ar1和Ar2分别为二价亚芳基，衍生自联苯酚化合物的Y1和Y2，衍生自二氟乙炔的Ar1和衍生自二氟芳基化合物的Ar 2。 其中Y1和Y2都来自芴双酚，n = 0.1至1.这种聚（亚芳基醚）聚合物与各种微电子器件一起使用，例如集成电路和多芯片模块。