公开(公告)号：US20060223330A1

公开(公告)日：2006-10-05

申请号：US11378767

申请日：2006-03-17

申请人： Mayuko Fudeta ,  Satoshi Komada

发明人： Mayuko Fudeta ,  Satoshi Komada

IPC分类号： H01L21/302

CPC分类号： H01L21/2007 ,  H01L21/78 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/0095

摘要： A method of manufacturing a nitride semiconductor device includes the steps of forming a groove on a surface of a first substrate by scribing, and forming a nitride semiconductor layer on the surface where the groove is formed. In addition, the method includes the steps of bonding the nitride semiconductor layer and a second substrate together and separating the nitride semiconductor layer and the first substrate from each other. With this manufacturing method, a nitride semiconductor device can be obtained with high yield.

摘要翻译： 制造氮化物半导体器件的方法包括以下步骤：通过划线在第一衬底的表面上形成沟槽，并在形成沟槽的表面上形成氮化物半导体层。 此外，该方法包括将氮化物半导体层和第二衬底接合在一起并将氮化物半导体层和第一衬底彼此分离的步骤。 利用该制造方法，可以高产率获得氮化物半导体器件。

公开(公告)号：US08211726B2

公开(公告)日：2012-07-03

申请号：US11707058

申请日：2007-02-16

申请人： Satoshi Komada ,  Mayuko Fudeta

发明人： Satoshi Komada ,  Mayuko Fudeta

IPC分类号： H01L21/20

CPC分类号： H01L33/007 ,  B82Y20/00 ,  H01S5/0217 ,  H01S5/0422 ,  H01S5/305 ,  H01S5/3063 ,  H01S5/34333 ,  H01S2301/173 ,  H01S2304/04

摘要： An object is to provide a method of manufacturing a nitride semiconductor light emitting device having high light emission output and allowing decrease in forward voltage (Vf). The invention is directed to a method of manufacturing a nitride semiconductor light emitting device including at least an n-type nitride semiconductor, a p-type nitride semiconductor and an active layer formed between the n-type nitride semiconductor and the p-type nitride semiconductor, wherein the n-type nitride semiconductor includes at least an n-type contact layer and an n-side GaN layer, the n-side GaN layer consists of a single or a plurality of undoped and/or n-type layers, and the method includes the step of forming the n-side GaN layer by organic metal vapor deposition with the growth temperature set within the range of 500 to 1000° C., such that the n-side GaN layer is formed between the n-type contact layer and the active layer.

摘要翻译： 本发明的目的是提供一种制造具有高发光输出并允许正向电压（Vf）降低的氮化物半导体发光器件的方法。 本发明涉及一种制造氮化物半导体发光器件的方法，所述氮化物半导体发光器件至少包括形成在n型氮化物半导体和p型氮化物半导体之间的n型氮化物半导体，p型氮化物半导体和有源层 其中，所述n型氮化物半导体至少包括n型接触层和n侧GaN层，所述n侧GaN层由单个或多个未掺杂的和/或n型层构成， 方法包括通过有机金属气相沉积形成n侧GaN层的步骤，其生长温度设定在500至1000℃的范围内，使得n侧GaN层形成在n型接触层 和活性层。

公开(公告)号：US07858414B2

公开(公告)日：2010-12-28

申请号：US11378767

申请日：2006-03-17

申请人： Mayuko Fudeta ,  Satoshi Komada

发明人： Mayuko Fudeta ,  Satoshi Komada

IPC分类号： H01L21/00

CPC分类号： H01L21/2007 ,  H01L21/78 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/0095

摘要： A method of manufacturing a nitride semiconductor device includes the steps of forming a groove on a surface of a first substrate by scribing, and forming a nitride semiconductor layer on the surface where the groove is formed. In addition, the method includes the steps of bonding the nitride semiconductor layer and a second substrate together and separating the nitride semiconductor layer and the first substrate from each other. With this manufacturing method, a nitride semiconductor device can be obtained with high yield.

摘要翻译： 制造氮化物半导体器件的方法包括以下步骤：通过划线在第一衬底的表面上形成沟槽，并在形成沟槽的表面上形成氮化物半导体层。 此外，该方法包括将氮化物半导体层和第二衬底接合在一起并将氮化物半导体层和第一衬底彼此分离的步骤。 利用该制造方法，可以高产率获得氮化物半导体器件。

公开(公告)号：US20070200126A1

公开(公告)日：2007-08-30

申请号：US11707058

申请日：2007-02-16

申请人： Satoshi Komada ,  Mayuko Fudeta

发明人： Satoshi Komada ,  Mayuko Fudeta

IPC分类号： H01L33/00 ,  H01L29/22

CPC分类号： H01L33/007 ,  B82Y20/00 ,  H01S5/0217 ,  H01S5/0422 ,  H01S5/305 ,  H01S5/3063 ,  H01S5/34333 ,  H01S2301/173 ,  H01S2304/04

摘要： An object is to provide a method of manufacturing a nitride semiconductor light emitting device having high light emission output and allowing decrease in forward voltage (Vf). The invention is directed to a method of manufacturing a nitride semiconductor light emitting device including at least an n-type nitride semiconductor, a p-type nitride semiconductor and an active layer formed between the n-type nitride semiconductor and the p-type nitride semiconductor, wherein the n-type nitride semiconductor includes at least an n-type contact layer and an n-side GaN layer, the n-side GaN layer consists of a single or a plurality of undoped and/or n-type layers, and the method includes the step of forming the n-side GaN layer by organic metal vapor deposition with the growth temperature set within the range of 500 to 1000° C., such that the n-side GaN layer is formed between the n-type contact layer and the active layer.

摘要翻译： 本发明的目的是提供一种制造具有高发光输出并允许正向电压（Vf）降低的氮化物半导体发光器件的方法。 本发明涉及一种制造氮化物半导体发光器件的方法，所述氮化物半导体发光器件至少包括形成在n型氮化物半导体和p型氮化物半导体之间的n型氮化物半导体，p型氮化物半导体和有源层 其中，所述n型氮化物半导体至少包括n型接触层和n侧GaN层，所述n侧GaN层由单个或多个未掺杂的和/或n型层构成， 方法包括通过有机金属气相沉积形成n侧GaN层的步骤，其生长温度设定在500至1000℃的范围内，使得n侧GaN层形成在n型接触层 和活性层。

公开(公告)号：US20070202621A1

公开(公告)日：2007-08-30

申请号：US11706267

申请日：2007-02-15

申请人： Satoshi Komada ,  Mayuko Fudeta

发明人： Satoshi Komada ,  Mayuko Fudeta

IPC分类号： H01L21/00

CPC分类号： H01L33/007 ,  B82Y20/00 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01S5/0217 ,  H01S5/0422 ,  H01S5/305 ,  H01S5/3063 ,  H01S5/34333 ,  H01S2304/04

摘要： A method of manufacturing a nitride semiconductor light emitting device having high light emission output and allowing decrease in forward voltage (Vf) is provided. The invention is directed to a method of manufacturing a nitride semiconductor light emitting device including at least an n-type nitride semiconductor, a p-type nitride semiconductor and an active layer formed between the n-type nitride semiconductor and the p-type nitride semiconductor, wherein the n-type nitride semiconductor includes at least an n-type contact layer and an n-side GaN layer, the n-side GaN layer consists of a single or a plurality of undoped and/or n-type layers, and the method includes the step of forming the n-side GaN layer by organic metal vapor deposition using a nitrogen-containing gas as a carrier gas, such that the n-side GaN layer is formed between the n-type contact layer and the active layer.

摘要翻译： 提供一种制造具有高发光输出并允许正向电压（Vf）降低的氮化物半导体发光器件的方法。 本发明涉及一种制造氮化物半导体发光器件的方法，所述氮化物半导体发光器件至少包括形成在n型氮化物半导体和p型氮化物半导体之间的n型氮化物半导体，p型氮化物半导体和有源层 其中，所述n型氮化物半导体至少包括n型接触层和n侧GaN层，所述n侧GaN层由单个或多个未掺杂的和/或n型层构成， 方法包括通过使用含氮气体作为载气的有机金属气相沉积来形成n侧GaN层的步骤，使得n型GaN层形成在n型接触层和有源层之间。

公开(公告)号：US09070805B2

公开(公告)日：2015-06-30

申请号：US13533649

申请日：2012-06-26

申请人： Mayuko Fudeta ,  Satoshi Komada ,  Ryu Kaihara

发明人： Mayuko Fudeta ,  Satoshi Komada ,  Ryu Kaihara

IPC分类号： H01L27/15 ,  H01L29/06 ,  H01L31/072 ,  H01L33/04 ,  H01L33/32

CPC分类号： H01L33/06 ,  H01L33/04 ,  H01L33/22 ,  H01L33/32 ,  H01L2933/0033

摘要： A nitride semiconductor light-emitting device has a first conductive-type nitride semiconductor layer, a superlattice layer provided on the first conductive-type nitride semiconductor layer, an active layer provided on the superlattice layer, and a second conductive-type nitride semiconductor layer provided on the active layer. An average carrier concentration of the superlattice layer is higher than an average carrier concentration of the active layer.

摘要翻译： 氮化物半导体发光器件具有第一导电型氮化物半导体层，设置在第一导电型氮化物半导体层上的超晶格层，设置在超晶格层上的有源层和设置在超晶格层上的第二导电型氮化物半导体层 在活动层。 超晶格层的平均载流子浓度高于活性层的平均载流子浓度。

公开(公告)号：US08119428B2

公开(公告)日：2012-02-21

申请号：US11707058

申请日：2007-02-16

申请人： Satoshi Komada ,  Mayuko Fudeta

发明人： Satoshi Komada ,  Mayuko Fudeta

IPC分类号： H01L21/20

摘要： An object is to provide a method of manufacturing a nitride semiconductor light emitting device having high light emission output and allowing decrease in forward voltage (Vf). The invention is directed to a method of manufacturing a nitride semiconductor light emitting device including at least an n-type nitride semiconductor, a p-type nitride semiconductor and an active layer formed between the n-type nitride semiconductor and the p-type nitride semiconductor, wherein the n-type nitride semiconductor includes at least an n-type contact layer and an n-side GaN layer, the n-side GaN layer consists of a single or a plurality of undoped and/or n-type layers, and the method includes the step of forming the n-side GaN layer by organic metal vapor deposition with the growth temperature set within the range of 500 to 1000° C., such that the n-side GaN layer is formed between the n-type contact layer and the active layer.

公开(公告)号：US08350278B2

公开(公告)日：2013-01-08

申请号：US12950747

申请日：2010-11-19

申请人： Satoshi Komada

发明人： Satoshi Komada

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L33/382 ,  H01L33/22 ,  H01L33/46

摘要： A nitride semiconductor light-emitting device includes an n type nitride semiconductor layer, a light-emitting layer formed on the n type nitride semiconductor layer, a first p type nitride semiconductor layer formed on the light-emitting layer, an intermediate layer formed on the first p type nitride semiconductor layer to alternately cover and expose a surface of the first p type nitride semiconductor layer, and a second p type nitride semiconductor layer formed on the intermediate layer. The intermediate layer is made of a compound containing Si and N as constituent elements.

摘要翻译： 氮化物半导体发光器件包括n型氮化物半导体层，形成在n型氮化物半导体层上的发光层，形成在发光层上的第一p型氮化物半导体层，形成在该氮化物半导体层上的中间层 第一p型氮化物半导体层，交替地覆盖和暴露第一p型氮化物半导体层的表面，以及形成在中间层上的第二p型氮化物半导体层。 中间层由含有Si和N作为构成元素的化合物制成。

公开(公告)号：US20080241983A1

公开(公告)日：2008-10-02

申请号：US12073393

申请日：2008-03-05

申请人： Satoshi Komada ,  Atsushi Ogawa ,  Hiroki Takaoka

发明人： Satoshi Komada ,  Atsushi Ogawa ,  Hiroki Takaoka

IPC分类号： H01L33/00

CPC分类号： H01L33/0075 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02658

摘要： Provided is a method of manufacturing a nitride semiconductor light-emitting device including the step of contacting a surfactant material with the surface of an n-type nitride semiconductor layer or the surface of a p-type nitride semiconductor layer before the growth of an active layer, or, with a grown crystal surface during or after the growth of the active layer. According to this manufacturing method, a nitride semiconductor light-emitting device having higher light-emitting efficiency can be obtained.

摘要翻译： 提供一种制造氮化物半导体发光器件的方法，其包括在活性层生长之前使表面活性剂材料与n型氮化物半导体层的表面或p型氮化物半导体层的表面接触的步骤 ，或者在活性层生长期间或之后具有生长的晶体表面。 根据该制造方法，可以获得具有较高发光效率的氮化物半导体发光器件。

公开(公告)号：US08084764B2

公开(公告)日：2011-12-27

申请号：US12076812

申请日：2008-03-24

申请人： Satoshi Komada

发明人： Satoshi Komada

IPC分类号： H01L29/06

CPC分类号： H01L33/02 ,  H01L33/04 ,  H01L33/32

摘要： The present invention is a semiconductor light emitting device including an n-type semiconductor layer, an active layer, a first p-type semiconductor layer between the n-type semiconductor layer and the active layer, and a second p-type semiconductor layer on the opposite side of the first p-type semiconductor layer from the active layer. Further, the present invention is a nitride semiconductor light emitting device including an n-type nitride semiconductor layer, a nitride semiconductor active layer, a first p-type nitride semiconductor layer between the n-type nitride semiconductor layer and the nitride semiconductor active layer, and a second p-type nitride semiconductor layer on the opposite side of the first p-type nitride semiconductor layer from the nitride semiconductor active layer.

摘要翻译： 本发明是一种半导体发光器件，其包括在n型半导体层和有源层之间的n型半导体层，有源层，第一p型半导体层和第二p型半导体层， 第一p型半导体层与有源层相对的一侧。 此外，本发明是一种氮化物半导体发光器件，其包括在n型氮化物半导体层和氮化物半导体有源层之间的n型氮化物半导体层，氮化物半导体有源层，第一p型氮化物半导体层， 以及与所述氮化物半导体活性层在所述第一p型氮化物半导体层相反一侧的第二p型氮化物半导体层。