公开(公告)号：US20150372640A1

公开(公告)日：2015-12-24

申请号：US14308715

申请日：2014-06-19

申请人： Mei-huan Yang ,  Jonathan A. Jackson ,  Terry Zahuranec ,  Michael J. Creager ,  Remigio Perales ,  Cheng-Liang Wu ,  Chin-Wei Hsu ,  Chiun-Yen Tung ,  Ying-Jie Peng ,  Ping-Pang Lee ,  Mark J. Elting

发明人： Mei-huan Yang ,  Jonathan A. Jackson ,  Terry Zahuranec ,  Michael J. Creager ,  Remigio Perales ,  Cheng-Liang Wu ,  Chin-Wei Hsu ,  Chiun-Yen Tung ,  Ying-Jie Peng ,  Ping-Pang Lee ,  Mark J. Elting

IPC分类号： H02S40/44 ,  H02S40/22

CPC分类号： H02S40/44 ,  F24S23/74 ,  F24S23/79 ,  F24S30/425 ,  H01L31/0547 ,  H02S20/30 ,  H02S50/00 ,  Y02E10/45 ,  Y02E10/47 ,  Y02E10/52 ,  Y02E10/60

摘要： Extremely fast dynamic control is allowed for hybrid PV/T (photovoltaic/thermal) distributed power production using concentrated solar power by manipulating the transmissive or reflective state of a capture element or mirror or lens that can pass highly concentrated solar light from one energy conversion device to another, such as a thermal collector and a photovoltaic receiver, such as a vertical multijunction cell array. This allows superior quality electrical backfeed into an electric utility, enhanced plant electrical production revenue, and responsiveness to a multitude of conditions to meet new stringent engineering requirements for distributed power plants. The mirror or lens can be physically articulated using fast changing of a spatial variable, or can be a fixed smart material that changes state. A mechanical jitter or variable state jitter can be applied to the capture element, including at utility electric grid line frequency.

摘要翻译： 通过操纵可以从一个能量转换装置通过高度集中的太阳光的捕获元件或镜子或透镜的透射或反射状态，使用集中的太阳能发电的混合PV / T（光伏/热）分布式电力生产允许非常快速的动态控制 到另一个，例如热收集器和光伏接收器，例如垂直多结单元阵列。 这允许优质的电气回馈到电力公司，增强工厂电气生产收入，以及对多种条件的响应，以满足分布式发电厂的新的严格的工程要求。 可以使用空间变量的快速变化来物理地对镜子或镜头进行关节，或者可以是改变状态的固定智能材料。 机械抖动或可变状态抖动可以应用于捕获元件，包括在公用事业电网线路频率。

公开(公告)号：US20160005906A1

公开(公告)日：2016-01-07

申请号：US14324040

申请日：2014-07-03

申请人： Chiun-Yen Tung ,  Mei-huan Yang ,  Terry Zahuranec ,  Remigio Perales ,  Te-Chih Huang ,  Jheng-Syuan Shih ,  Cheng-Liang Wu ,  Chin-Wei Hsu ,  Mark J. Elting

发明人： Chiun-Yen Tung ,  Mei-huan Yang ,  Terry Zahuranec ,  Remigio Perales ,  Te-Chih Huang ,  Jheng-Syuan Shih ,  Cheng-Liang Wu ,  Chin-Wei Hsu ,  Mark J. Elting

IPC分类号： H01L31/052 ,  H01L31/18 ,  H01L31/047

CPC分类号： H01L31/052 ,  H01L31/047 ,  H01L31/0521 ,  H01L31/18 ,  Y02E10/50

摘要： Thermal, electrical and/or optical interfacing for three-dimensional optoelectronic devices, such as semiconductor device billets, allows high intensity operation, such as for receiving and transducing extremely high intensity light shined onto a small surface semiconductor optoelectronic device such as a photovoltaic receiver or cell, transducer, waveguide or splitter. This allows high intensity energy transfer for beam receiving, signal acquisition, and beam or signal generation for high intensity power beaming and wireless power transmission. Preferred embodiments include three-dimensional photovoltaic receiver billets capable of receiving thousands of suns intensity or high intensity laser light for power conversion, such as by using edge-illuminated vertical multijunction photovoltaic receivers. Heat sink holding structures assist in thermal and electromagnetic communication with opposing billet surfaces.

摘要翻译： 用于三维光电子器件（例如半导体器件坯料）的热，电和/或光学接口允许高强度操作，例如用于接收和转换发光到小表面半导体光电子器件（例如光伏接收器）上的极高强度的光 电池，换能器，波导或分流器。 这允许高强度能量传输用于波束接收，信号采集和用于高强度功率发射和无线功率传输的波束或信号生成。 优选的实施例包括能够接收数千个太阳强度或用于功率转换的高强度激光的三维光伏接收器坯料，例如通过使用边缘照明的垂直多结光伏接收器。 散热器固定结构有助于与相对的钢坯表面进行热和电磁连通。

公开(公告)号：US20160005902A1

公开(公告)日：2016-01-07

申请号：US14530619

申请日：2014-10-31

申请人： Chiun-Yen Tung ,  Mei-huan Yang ,  Terry Zahuranec ,  Remigio Perales ,  Te-Chih Huang ,  Jheng-Syuan Shih ,  Cheng-Liang Wu ,  Chin-Wei Hsu

发明人： Chiun-Yen Tung ,  Mei-huan Yang ,  Terry Zahuranec ,  Remigio Perales ,  Te-Chih Huang ,  Jheng-Syuan Shih ,  Cheng-Liang Wu ,  Chin-Wei Hsu

IPC分类号： H01L31/052 ,  H01L31/0725

CPC分类号： H01L31/052 ,  H01L31/047 ,  H01L31/0521 ,  H01L31/18 ,  Y02E10/50

摘要： New high energy operating regimes for high intensity energy transfer for beam receiving, signal acquisition, and beam or signal generation for power beaming and wireless power transmission are made possible by new direct thermal pathways for heat sinking, where an energy conversion device comprises a plurality of fins [1] originating from inside the energy conversion device; [2] formed from an energy conversion device component; and where those fins [3] individually support traffic in energy carriers essential to the function of the energy conversion device. This allows high energy thermal interfacing and high intensity energy conversion, such as for receiving and transducing extremely high intensity light shined onto a small surface semiconductor device such as a vertical multijunction photovoltaic receiver. This allows high intensity energy transfer for beam receiving, signal acquisition, and beam or signal generation for high intensity power beaming and wireless power transmission.

摘要翻译： 用于光束接收，信号采集和用于功率射束和无线功率传输的波束或信号生成的高强度能量传输的新的高能量操作方案由用于散热的新的直接热路径成为可能，其中能量转换装置包括多个 源自能量转换装置内的散热片[1] [2]由能量转换装置部件形成; 并且那些鳍[3]分别支持对能量转换装置的功能至关重要的能量载体的交通。 这允许高能量热接口和高强度能量转换，例如用于接收和转换照射到诸如垂直多结光伏接收器的小表面半导体器件上的极高强度的光。 这允许高强度能量传输用于波束接收，信号采集和用于高强度功率发射和无线功率传输的波束或信号生成。

公开(公告)号：US5981018A

公开(公告)日：1999-11-09

申请号：US78311

申请日：1998-05-13

申请人： Tai-Hwang Lai ,  Yu-Yun Lo ,  Chiun-Yen Tung ,  James Liang ,  Hung-Huei Liang

发明人： Tai-Hwang Lai ,  Yu-Yun Lo ,  Chiun-Yen Tung ,  James Liang ,  Hung-Huei Liang

IPC分类号： C23C14/16 ,  G11B5/73 ,  B32B3/02

CPC分类号： G11B5/732 ,  C23C14/165 ,  G11B5/7325 ,  Y10S428/90 ,  Y10S428/928 ,  Y10T428/12465 ,  Y10T428/12632 ,  Y10T428/12819 ,  Y10T428/12854 ,  Y10T428/12931 ,  Y10T428/12944 ,  Y10T428/265

摘要： The present invention relates to high-coercivity magnetic recording media used in a hard disk drive. The magnetic recording medium comprises a nonmagnetic substrate, a seed layer comprising NiAl alloy sputtered onto the substrate, a sublayer comprising CrV alloy sputtered onto the seed layer, a magnetic layer comprising CoCrPtTaNb alloy sputtered onto the sublayer, and a carbon overcoat sputtered onto the magnetic layer. The magnetic recording medium of such a structure has improved signal-to-noise ratio, coercivity, overwrite capability, and orientation ratio thereby greatly improving the storage density and read/write capacity of the magnetic recording medium. Furthermore, the coercivity of the magnetic layer of CoCrPtTaNb alloy according to the present invention can be as high as 4000 Oersteds even without the use of the NiAl seed layer.

摘要翻译： 本发明涉及硬盘驱动器中使用的高矫顽力磁记录介质。 磁记录介质包括非磁性基底，溅射在基底上的包含NiAl合金的晶种层，溅射到种子层上的CrV合金的子层，溅射到子层上的CoCrPtTaNb合金的磁性层和溅射到磁层上的碳外涂层 层。 这种结构的磁记录介质具有提高的信噪比，矫顽力，重写能力和取向比，从而大大提高了磁记录介质的存储密度和读/写能力。 此外，即使不使用NiAl种子层，根据本发明的CoCrPtTaNb合金的磁性层的矫顽力也可以高达4000奥斯特。

公开(公告)号：US08421179B2

公开(公告)日：2013-04-16

申请号：US13186494

申请日：2011-07-20

申请人： Chiun-Yen Tung ,  Kun-Hsien Chen ,  Kai-Ying Wang ,  Wen-Li Tsai

发明人： Chiun-Yen Tung ,  Kun-Hsien Chen ,  Kai-Ying Wang ,  Wen-Li Tsai

IPC分类号： H01L29/872

CPC分类号： H01L29/872 ,  H01L29/8611

摘要： A Schottky diode with high antistatic capability has an N− type doped drift layer formed on an N+ type doped layer. The N− type doped drift layer has a surface formed with a protection ring. Inside the protection ring is a P-type doped area. The N− type doped drift layer surface is further formed with an oxide layer and a metal layer. The contact region between the metal layer and the N− type doped drift layer and the P-type doped area forms a Schottky contact. The P-type doped area has a low-concentration lower layer and a high-concentration upper layer, so that the surface ion concentration is high in the P-type doped area. The Schottky diode thus has such advantages of lowered forward voltage drop and high antistatic capability.

摘要翻译： 具有高抗静电能力的肖特基二极管具有形成在N +型掺杂层上的N型掺杂漂移层。 N型掺杂漂移层具有形成有保护环的表面。 保护环内部是P型掺杂区域。 N型掺杂漂移层表面还形成有氧化物层和金属层。 金属层和N型掺杂漂移层和P型掺杂区域之间的接触区域形成肖特基接触。 P型掺杂区域具有低浓度下层和高浓度上层，使得P型掺杂区域中的表面离子浓度高。 因此，肖特基二极管具有降低正向压降和高抗静电能力的优点。

公开(公告)号：US20110163408A1

公开(公告)日：2011-07-07

申请号：US12655698

申请日：2010-01-06

申请人： Chiun-Yen Tung ,  Kun-Hsien Chen ,  Kai-Ying Wang ,  Hung Ta Weng ,  Yi-Chen Shen

发明人： Chiun-Yen Tung ,  Kun-Hsien Chen ,  Kai-Ying Wang ,  Hung Ta Weng ,  Yi-Chen Shen

IPC分类号： H01L29/872 ,  H01L29/06

CPC分类号： H01L29/872 ,  H01L29/0692

摘要： A Schottky diode structure with low reverse leakage current and low forward voltage drop has a first conductive material semiconductor substrate combined with a metal layer. An oxide layer is formed around the edge of the combined conductive material semiconductor substrate and the metal layer. A plurality of dot-shaped or line-shaped second conductive material regions are formed on the surface of the first conductive material semiconductor substrate connecting to the metal layer. The second conductive material regions form depletion regions in the first conductive material semiconductor substrate. The depletion regions can reduce the leakage current area of the Schottky diode, thereby reducing the reverse leakage current and the forward voltage drop. When the first conductive material is a P-type semiconductor, the second conductive material is an N-type semiconductor. When the first conductive material is an N-type semiconductor, the second conductive material is a P-type semiconductor.

摘要翻译： 具有低反向漏电流和低正向压降的肖特基二极管结构具有与金属层组合的第一导电材料半导体衬底。 在组合的导电材料半导体衬底和金属层的边缘周围形成氧化物层。 在与金属层连接的第一导电材料半导体衬底的表面上形成多个点状或线状的第二导电材料区域。 第二导电材料区域在第一导电材料半导体衬底中形成耗尽区。 耗尽区域可以减小肖特基二极管的漏电流面积，从而减少反向漏电流和正向压降。 当第一导电材料是P型半导体时，第二导电材料是N型半导体。 当第一导电材料是N型半导体时，第二导电材料是P型半导体。