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1.发明授权Sacrificial erosion control features for chemical-mechanical polishing process 失效用于化学机械抛光工艺的牺牲侵蚀控制功能
公开(公告)号：US6087733A
公开(公告)日：2000-07-11
申请号：US94541
申请日：1998-06-12
IPC分类号： H01L21/321 , H01L21/768 , H01L23/544 , H01L21/301 , H01L21/302 , H01L21/76
CPC分类号： H01L23/544 , H01L21/3212 , H01L21/7684 , H01L2223/5442 , H01L2223/54426 , H01L2223/54453 , H01L2223/5446 , H01L2924/0002
摘要： A method and apparatus for compensating for the effects of nonuniform planarization in chemical-mechanical polishing (CMP) such as the erosion occurring from the removal of titanium nitride/tungsten films is disclosed. In the context of alignment marks, dummy marks are disposed on both sides of the actual alignment marks providing a similar feature density as the alignment marks. During the CMP, the dummy marks reside in the area of nonuniform erosion, leaving the actual marks in an area of uniform erosion. The present invention may also be used to control underlayer erosion variations in the high feature density device areas adjacent to the low feature density open areas by providing dummy features in the low feature density areas.
摘要翻译： 公开了一种用于补偿化学机械抛光（CMP）中不均匀平面化的影响的方法和装置，例如从去除氮化钛/钨膜而发生的侵蚀。 在对准标记的上下文中，虚拟标记设置在实际对准标记的两侧，提供与对准标记相似的特征密度。 在CMP期间，虚拟标记位于不均匀侵蚀的区域，留下实际痕迹在均匀侵蚀的区域。 本发明还可以用于通过在低特征密度区域中提供虚拟特征来控制与低特征密度开放区域相邻的高特征密度装置区域中的底层侵蚀变化。
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2.发明授权公开(公告)号：US06443814B1
公开(公告)日：2002-09-03
申请号：US09962428
申请日：2001-09-24
IPC分类号： H01L21302
CPC分类号： B08B3/08 , C11D7/265 , C11D11/0029 , H01L21/02074 , Y10S134/902
摘要： Methods for the chemical-mechanical polishing (CMP) of copper layers on integrated circuits are described, along with the chemical compositions of various pre- and post-polishing solutions. In one embodiment, a pre-polish cleaning operation with a complexing organic acid buffer system is performed prior to the CMP of the copper. In alternative embodiments, a rinse operation is performed subsequent to the cleaning operation and prior to the CMP. In further alternatives, a post-polish cleaning operation with a chelating agent is performed. In still further alternatives, the pH of a pre-polish cleaner is ramped during the pre-polish cleaning operation to match the pH of the polish slurry which is used, subsequent to the cleaning operation, to remove excess portions of the copper layer to be polished.
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3.发明授权
公开(公告)号：US5611943A
公开(公告)日：1997-03-18
申请号：US536467
申请日：1995-09-29
申请人： Kenneth C. Cadien , Leopoldo D. Yau
发明人： Kenneth C. Cadien , Leopoldo D. Yau
CPC分类号： B24B37/042 , B24B53/017
摘要： A method and apparatus for conditioning and/or rinsing a pad in a chemical-mechanical polisher. A scoring apparatus is rotated about its center directly over the polishing pad of the chemical-mechanical polisher. The scoring apparatus scores the pad surface while rotating above the pad. Consequently the pad is conditioned in a uniform and concentric fashion.
摘要翻译： 用于在化学机械抛光机中调节和/或漂洗垫的方法和装置。 刻痕设备围绕其中心旋转直接在化学机械抛光机的抛光垫上。 评分装置在垫上方旋转时评分垫表面。 因此，垫以均匀和同心的方式调节。
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公开(公告)号：US5340370A
公开(公告)日：1994-08-23
申请号：US146923
申请日：1993-11-03
IPC分类号： C09G1/02 , C09K3/14 , H01L21/321 , H01L21/768 , C23F1/44 , B44C1/22
CPC分类号： H01L21/76843 , C09G1/02 , C09K3/1463 , H01L21/3212 , H01L21/7684
摘要： Novel slurries for the chemical mechanical polishing of thin films used in integrated circuit manufacturing. A tungsten slurry of the present invention comprises an oxidizing agent, such as potassium ferricyanide, an abrasive such as silica, and has a pH between two and four. The tungsten slurry of the present invention can be used in a chemical mechanical planarization process to polish back a blanket deposited tungsten film to form plugs or vias. The tungsten slurry can also be used to polish copper, tungsten silicide, and titanium nitride. A second slurry, which is a 9:1 dilution of the tungsten slurry is ideal for chemical mechanical polishing of titanium nitride films. A third slurry of the present invention comprises a fluoride salt, an abrasive such as silica and has a pH.ltoreq.8. The third slurry can be used to polish titanium films.
摘要翻译： 用于集成电路制造中使用的薄膜的化学机械抛光的新型浆料。 本发明的钨浆料包含氧化剂，例如铁氰化钾，研磨剂如二氧化硅，并且pH在2和4之间。 本发明的钨浆料可用于化学机械平面化处理以抛光覆盖沉积的钨膜以形成塞子或通孔。 钨浆料也可用于抛光铜，硅化钨和氮化钛。 对于氮化钛膜的化学机械抛光，第二种浆料是9：1稀释的钨浆料。 本发明的第三种浆料包含氟化物盐，研磨剂如二氧化硅，并具有pH = 8。 第三种浆料可用于抛光钛膜。
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5.发明授权公开(公告)号：US06464568B2
公开(公告)日：2002-10-15
申请号：US09729609
申请日：2000-12-04
IPC分类号： H01L21302
CPC分类号： B08B3/08 , C11D7/265 , C11D11/0029 , H01L21/02074 , Y10S134/902
摘要： Methods for the chemical-mechanical polishing (CMP) of copper layers on integrated circuits are described, along with the chemical compositions of various pre- and post-polishing solutions. In one embodiment, a pre-polish cleaning operation with a complexing organic acid buffer system is performed prior to the CMP of the copper. In alternative embodiments, a rinse operation is performed subsequent to the cleaning operation and prior to the CMP. In further alternatives, a post-polish cleaning operation with a chelating agent is performed. In still further alternatives, the pH of a pre-polish cleaner is ramped during the pre-polish cleaning operation to match the pH of the polish slurry which is used, subsequent to the cleaning operation, to remove excess portions of the copper layer to be polished.
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公开(公告)号：US5954975A
公开(公告)日：1999-09-21
申请号：US796962
申请日：1997-02-07
IPC分类号： C09G1/02 , C09K3/14 , H01L21/321 , H01L21/768 , H01L21/304
CPC分类号： H01L21/76843 , C09G1/02 , C09K3/1463 , H01L21/3212 , H01L21/7684
摘要： Novel slurries for the chemical mechanical polishing of thin films used in integrated circuit manufacturing. A tungsten slurry of the present invention comprises an oxidizing agent, such as potassium ferricyanide, an abrasive such as silica, and has a pH between two and four. The tungsten slurry of the present invention can be used in a chemical mechanical planarization process to polish back a blanket deposited tungsten film to form plugs or vias. The tungsten slurry can also be used to polish copper, tungsten silicide, and titanium nitride. A second slurry, which is a 9:1 dilution of the tungsten slurry is ideal for chemical mechanical polishing of titanium nitride films. A third slurry of the present invention comprises a fluoride salt, an abrasive such as silica and has a pH.ltoreq.8. The third slurry can be used to polish titanium films.
摘要翻译： 用于集成电路制造中使用的薄膜的化学机械抛光的新型浆料。 本发明的钨浆料包含氧化剂，例如铁氰化钾，研磨剂如二氧化硅，并且pH在2和4之间。 本发明的钨浆料可用于化学机械平面化处理以抛光覆盖沉积的钨膜以形成塞子或通孔。 钨浆料也可用于抛光铜，硅化钨和氮化钛。 对于氮化钛膜的化学机械抛光，第二种浆料是9：1稀释的钨浆料。 本发明的第三种浆料包含氟化物盐，研磨剂如二氧化硅，并具有pH = 8。 第三种浆料可用于抛光钛膜。
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公开(公告)号：US5604158A
公开(公告)日：1997-02-18
申请号：US632751
申请日：1996-04-16
IPC分类号： H01L21/768 , H01L21/44
CPC分类号： H01L21/76843 , H01L21/7684 , H01L21/76877
摘要： A method of filling an opening in an insulating layer of an integrated circuit. First a tungsten-silicide layer is deposited over the opening. Next a tungsten layer is deposited onto the tungsten-silicide layer such that the opening is substantially filed with tungsten. The tungsten and tungsten-silicide layer are then chemically-mechanically polished back until the insulating layer is substantially revealed.
摘要翻译： 一种填充集成电路绝缘层中的开口的方法。 首先将硅化钨层沉积在开口上。 接下来，钨层沉积在硅化钨层上，使得开口基本上覆盖有钨。 然后将钨和硅化钨层进行化学机械抛光，直到基本上露出绝缘层。
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公开(公告)号：US07087188B2
公开(公告)日：2006-08-08
申请号：US10360254
申请日：2003-02-05
IPC分类号： C09K13/00
CPC分类号： H01L21/7684 , H01L21/3212
摘要： A slurry for use in polishing a first material having a first hardness, wherein the first material overlies a second material having a second hardness, and the second hardness is greater than the first hardness, includes an abrasive that has a hardness which is greater than that of the first material but less than that of the second material. In a particular embodiment of the present invention copper overlying a copper diffusion barrier is polished with a slurry having an abrasive which is harder than copper but less hard than the copper diffusion barrier. Iron oxide, strontium titanate, apatite, dioptase, iron, brass, fluorite, hydrated iron oxide, and azurite, are examples of materials that are harder than copper but less hard than materials typically used as copper diffusion barriers in integrated circuits.
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公开(公告)号：US06881674B2
公开(公告)日：2005-04-19
申请号：US09473391
申请日：1999-12-28
IPC分类号： C09G1/02 , H01L21/321 , H01L21/768 , H01L21/302
CPC分类号： H01L21/7684 , H01L21/3212
摘要： A slurry for use in polishing a first material having a first hardness, wherein the first material overlies a second material having a second hardness, and the second hardness is greater than the first hardness, includes an abrasive that has a hardness which is greater than that of the first material but less than that of the second material. In a particular embodiment of the present invention copper overlying a copper diffusion barrier is polished with a slurry having an abrasive which is harder than copper but less hard than the copper diffusion barrier. Iron oxide, strontium titanate, apatite, dioptase, iron, brass, fluorite, hydrated iron oxide, and azurite, are examples of materials that are harder than copper but less hard than materials typically used as copper diffusion barriers in integrated circuits.
摘要翻译： 一种用于抛光具有第一硬度的第一材料的浆料，其中所述第一材料覆盖在具有第二硬度的第二材料上，并且所述第二硬度大于所述第一硬度，所述浆料包括硬度大于所述硬度的磨料 的第一材料，但是小于第二材料的材料。 在本发明的一个具体实施方案中，铜覆盖铜扩散阻挡层的铜用具有比铜更硬但比铜扩散阻挡层硬的磨料的浆料抛光。 铁氧化物，钛酸锶，磷灰石，二磷酸钙，铁，黄铜，萤石，水合氧化铁和砷灰石是比铜更硬的材料的实例，但是比通常用作集成电路中的铜扩散阻挡层的材料硬。
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公开(公告)号：US06752844B2
公开(公告)日：2004-06-22
申请号：US09280268
申请日：1999-03-29
IPC分类号： C09C168
CPC分类号： C09G1/02 , C09K3/1463 , C23F3/00 , H01L21/3212
摘要： The invention provides a chemical-mechanical polishing slurry comprising a liquid, cerium ions as an oxidizer, an abrasive, and a pH increasing substance. The cerium ions are in the liquid in a quantity equal to the inclusion of at least 0.02 molar ammonium cerium nitrate in the liquid. The abrasive is also included in the liquid. The liquid, the cerium ions and the abrasive jointly have a first pH value. The pH increasing substance increases the first pH value to a second pH value above 1.5.
摘要翻译： 本发明提供了一种化学机械抛光浆料，其包含液体，铈离子作为氧化剂，研磨剂和pH增加物质。 铈离子在液体中的量等于在液体中包含至少0.02摩尔硝酸铈铵。 磨料也包括在液体中。 液体，铈离子和研磨剂共同具有第一pH值。 pH增加物质将第一个pH值提高到高于1.5的第二个pH值。
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