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1.发明申请Apparatus and Method for Supercritical Fluid Removal or Deposition Processes 审中-公开超临界流体去除或沉积过程的设备和方法公开(公告)号：US20080271991A1
公开(公告)日：2008-11-06
申请号：US11911615
申请日：2006-04-17
IPC分类号： C23C14/00
CPC分类号： C23C18/00 , B08B7/0021 , G03F7/422 , G03F7/427 , H01L21/02101
摘要： A continuous-flow supercritical fluid (SCF) apparatus and method for the deposition of thin films onto microelectronic devices or the removal of unwanted layers, particles and/or residues from microelectronic devices having same thereon. The SCF apparatus preferably includes a dynamic mixer to ensure homogeneous mixing of the SCF and other chemical components.
摘要翻译： 一种用于将薄膜沉积到微电子器件上的连续流超临界流体（SCF）装置和方法，或从其上具有相同的微电子装置去除不想要的层，颗粒和/或残余物。 SCF设备优选地包括动态混合器以确保SCF和其它化学组分的均匀混合。
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2.发明授权公开(公告)号：US06735978B1
公开(公告)日：2004-05-18
申请号：US10364558
申请日：2003-02-11
IPC分类号： F25D100
CPC分类号： C01B32/50 , Y02P20/544
摘要： A system and process for utilization and disposition of a supercritical fluid composition, in which a supercritical fluid (SCF) composition is used in an SCF-using process facility such as a semiconductor manufacturing plant. The supercritical fluid composition is withdrawn from the process facility containing at least one component that is extraneous with respect to the further disposition of the supercritical fluid composition. The withdrawn supercritical fluid composition is converted to a pressurized liquid, which is treated to at least partially remove the extraneous component(s) therefrom. The extraneous component(s)-depleted pressurized liquid in its further disposition can be reconverted to a supercritical state for recycle to the SCF-using process facility, or it can be gasified and discharged to the atmosphere in the case of supercritical fluids such as CO2.
摘要翻译： 一种用于利用和处置超临界流体组合物的系统和方法，其中超临界流体（SCF）组合物在诸如半导体制造厂的SCF使用过程设备中使用。 超临界流体组合物从处理设备中取出，其中含有至少一种相对于超临界流体组合物的进一步处置是无关的组分。 将取出的超临界流体组合物转化为加压液体，其被处理以至少部分地从其中除去外来成分。 在其进一步的处置中，去除加压液体的外来成分可以再转化为超临界状态，以再循环至使用SCF的工艺设备，或者在超临界流体如CO2的情况下，可将其气化并排放到大气中 。
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3.发明授权Removal of MEMS sacrificial layers using supercritical fluid/chemical formulations 有权使用超临界流体/化学配方去除MEMS牺牲层公开(公告)号：US07517809B2
公开(公告)日：2009-04-14
申请号：US11620902
申请日：2007-01-08
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/02101 , B81C1/00476 , H01L21/31105 , H01L21/32131
摘要： A method and composition for removing silicon-containing sacrificial layers from Micro Electro Mechanical System (MEMS) and other semiconductor substrates having such sacrificial layers is described. The etching compositions include a supercritical fluid (SCF), an etchant species, a co-solvent, and optionally a surfactant. Such etching compositions overcome the intrinsic deficiency of SCFs as cleaning reagents, viz., the non-polar character of SCFs and their associated inability to solubilize polar species that must be removed from the semiconductor substrate. The resultant etched substrates experience lower incidents of stiction relative to substrates etched using conventional wet etching techniques.
摘要翻译： 描述了用于从微机电系统（MEMS）和其它具有这种牺牲层的半导体衬底去除含硅牺牲层的方法和组合物。 蚀刻组合物包括超临界流体（SCF），蚀刻剂物质，共溶剂和任选的表面活性剂。 这样的蚀刻组合物克服了作为清洗剂的SCF的固有缺陷，即SCF的非极性特征以及它们不溶于必须从半导体衬底去除的极性物质。 所得到的蚀刻的衬底相对于使用常规湿蚀刻技术蚀刻的衬底的沉降事件较少。
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4.发明授权Supercritical carbon dioxide/chemical formulation for ashed and unashed aluminum post-etch residue removal 失效超临界二氧化碳/化学制剂用于灰化和未镀铝的蚀刻后残留物去除公开(公告)号：US07223352B2
公开(公告)日：2007-05-29
申请号：US10285015
申请日：2002-10-31
IPC分类号： C09K13/00 , C09K13/04 , C09K13/08 , C09K13/06 , H01L21/302
CPC分类号： H01L21/02071 , C11D7/08 , C11D7/10 , C11D7/261 , C11D7/264 , C11D7/265 , C11D7/28 , C11D7/32 , C11D7/3245 , C11D7/50 , C11D7/5022 , C11D11/0047 , C23G5/00 , H01L21/02052 , H01L21/31133 , H01L21/32138
摘要： A post-etch residue cleaning composition for cleaning ashed or unashed aluminum/SiN/Si post-etch residue from small dimensions on semiconductor substrates. The cleaning composition contains supercritical CO2 (SCCO2), alcohol, fluoride source, an aluminum ion complexing agent and, optionally, corrosion inhibitor. Such cleaning composition overcomes the intrinsic deficiency of SCCO2 as a cleaning reagent, viz., the non-polar character of SCCO2 and its associated inability to solubilize species such as inorganic salts and polar organic compounds that are present in the post-etch residue and that must be removed from the semiconductor substrate for efficient cleaning. The cleaning composition enables damage-free, residue-free cleaning of substrates having ashed or unashed aluminum/SiN/Si post-etch residue thereon.
摘要翻译： 蚀刻后残留物清洁组合物，用于从半导体衬底上的小尺寸清洁灰化或未沉淀的铝/ SiN / Si后蚀刻残留物。 清洁组合物含有超临界CO 2（SCCO 2），醇，氟化物源，铝离子络合剂和任选的缓蚀剂。 这样的清洁组合物克服了SCCO2作为清洗剂的固有缺陷，即SCCO2的非极性特征及其与溶解残留物中存在的物质如无机盐和极性有机化合物无关，并且与SCCO2的非极性相关 必须从半导体衬底去除以进行有效的清洁。 清洁组合物能够对其上具有灰化或未镀铝/ SiN / Si蚀刻后残留物的基材进行无损伤，无残留的清洁。
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5.发明授权Removal of MEMS sacrificial layers using supercritical fluid/chemical formulations 失效使用超临界流体/化学配方去除MEMS牺牲层公开(公告)号：US07160815B2
公开(公告)日：2007-01-09
申请号：US10782355
申请日：2004-02-19
IPC分类号： H01L21/461
CPC分类号： B81C1/00936 , B08B7/0021 , B81C2201/0108 , B81C2201/117 , H01L21/02063
摘要： A method and composition for removing silicon-containing sacrificial layers from Micro Electro Mechanical System (MEMS) and other semiconductor substrates having such sacrificial layers is described. The etching compositions include a supercritical fluid (SCF), an etchant species, a co-solvent, and optionally a surfactant. Such etching compositions overcome the intrinsic deficiency of SCFs as cleaning reagents, viz., the non-polar character of SCFs and their associated inability to solubilize polar species that must be removed from the semiconductor substrate. The resultant etched substrates experience lower incidents of stiction relative to substrates etched using conventional wet etching techniques.
摘要翻译： 描述了用于从微机电系统（MEMS）和其它具有这种牺牲层的半导体衬底去除含硅牺牲层的方法和组合物。 蚀刻组合物包括超临界流体（SCF），蚀刻剂物质，共溶剂和任选的表面活性剂。 这样的蚀刻组合物克服了作为清洗剂的SCF的固有缺陷，即SCF的非极性特征以及它们不溶于必须从半导体衬底去除的极性物质。 所得到的蚀刻的衬底相对于使用常规湿蚀刻技术蚀刻的衬底的沉降事件较少。
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6.发明授权Compositions and methods for high-efficiency cleaning/polishing of semiconductor wafers 失效用于半导体晶片高效清洗/抛光的组合物和方法公开(公告)号：US07119052B2
公开(公告)日：2006-10-10
申请号：US10602172
申请日：2003-06-24
CPC分类号： G03F7/425 , C11D7/261 , C11D7/28 , C11D7/3209 , C11D7/5013 , C11D11/0047 , H01L21/02063 , H01L21/31133 , Y10S134/902 , Y10S438/906
摘要： A composition including supercritical fluid and at least one additive selected from fluoro species, and primary and/or secondary amines, optionally with co-solvent, low k material attack-inhibitor(s) and/or surfactant(s). The composition has particular utility for cleaning of semiconductor wafers to remove post-ashing residues therefrom.
摘要翻译： 一种组合物，其包含超临界流体和至少一种选自氟物质的添加剂，以及伯胺和/或仲胺，任选与共溶剂，低k物质攻击抑制剂和/或表面活性剂。 该组合物具有用于清洁半导体晶片从而除去其后灰化残留物的特殊用途。
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7.发明授权Supercritical carbon dioxide/chemical formulation for removal of photoresists 失效用于去除光致抗蚀剂的超临界二氧化碳/化学制剂公开(公告)号：US06989358B2
公开(公告)日：2006-01-24
申请号：US10285146
申请日：2002-10-31
IPC分类号： B08B3/00
CPC分类号： G03F7/423 , C11D7/02 , C11D7/10 , C11D7/3209 , C11D7/3281 , C11D7/5022
摘要： A photoresist cleaning composition for removing photoresist and ion implanted photoresist from semiconductor substrates. The cleaning composition contains supercritical CO2 (SCCO2) and alcohol for use in removing photoresist that is not ion-implanted. When the photoresist has been subjected to ion implantation, the cleaning composition additionally contains a fluorine ion source. Such cleaning composition overcomes the intrinsic deficiency of SCCO2 as a cleaning reagent, viz., the non-polar character of SCCO2 and its associated inability to solubilize species such as inorganic salts and polar organic compounds that are present in the photoresist and that must be removed from the semiconductor substrate for efficient cleaning. The cleaning composition enables damage-free, residue-free cleaning of substrates having photoresist or ion implanted photoresist thereon.
摘要翻译： 一种用于从半导体衬底去除光致抗蚀剂和离子注入的光致抗蚀剂的光致抗蚀剂清洁组合物。 清洁组合物含有超临界CO 2（SCCO 2）和用于除去未离子注入的光致抗蚀剂的醇。 当光致抗蚀剂已经进行离子注入时，清洁组合物另外含有氟离子源。 这种清洁组合物克服了SCCO2作为清洁剂的固有缺陷，即SCCO2的非极性特征及其与溶解光致抗蚀剂中存在并且必须除去的物质如无机盐和极性有机化合物无关 从半导体基板进行高效清洗。 清洁组合物能够对其上具有光致抗蚀剂或离子注入的光致抗蚀剂的基材进行无损伤，无残留的清洁。
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8.发明授权Removal of particle contamination on patterned silicon/silicon dioxide using supercritical carbon dioxide/chemical formulations 失效使用超临界二氧化碳/化学配方去除图案化硅/二氧化硅上的颗粒污染物公开(公告)号：US06943139B2
公开(公告)日：2005-09-13
申请号：US10284861
申请日：2002-10-31
IPC分类号： B08B7/00 , C11D7/02 , C11D7/10 , C11D7/32 , C11D7/50 , H01L21/306 , H01L21/311 , B08B3/00
CPC分类号： C11D11/0047 , B08B7/0021 , C11D7/02 , C11D7/10 , C11D7/3209 , C11D7/3281 , C11D7/5022 , H01L21/02063 , H01L21/31116
摘要： A cleaning composition for cleaning particulate contamination from small dimensions on semiconductor substrates. The cleaning composition contains supercritical CO2 (SCCO2), alcohol, fluoride source and, optionally, hydroxyl additive. Such cleaning composition overcomes the intrinsic deficiency of SCCO2 as a cleaning reagent, viz., the non-polar character of SCCO2 and its associated inability to solubilize species such as inorganic salts and polar organic compounds that are present in particulate contamination on wafer substrates and that must be removed from the semiconductor substrate for efficient cleaning. The cleaning composition enables damage-free, residue-free cleaning of substrates having particulate contamination on Si/SiO2 substrates.
摘要翻译： 一种用于从半导体衬底上的小尺寸清洁颗粒污染的清洁组合物。 清洁组合物含有超临界CO 2（SCCO 2），醇，氟化物源和任选的羟基添加剂。 这种清洁组合物克服了SCCO2作为清洁剂的固有缺陷，即SCCO2的非极性特征及其与溶解诸如无机盐和极性有机化合物的物质无关，这些物质存在于晶片衬底上的颗粒污染物中，并且 必须从半导体衬底去除以进行有效的清洁。 清洁组合物能够对Si / SiO 2基体上具有颗粒污染物的基材进行无损伤，无残留的清洗。
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9.发明申请DENSE FLUID COMPOSITIONS FOR REMOVAL OF HARDENED PHOTORESIST, POST-ETCH RESIDUE AND/OR BOTTOM ANTI-REFLECTIVE COATING 审中-公开用于去除硬化光催化剂，去除后残留物和/或底部抗反射涂层的DENSE流体组合物公开(公告)号：US20090192065A1
公开(公告)日：2009-07-30
申请号：US11917654
申请日：2006-06-16
IPC分类号： G03F7/42
CPC分类号： C11D11/0047 , C11D3/3947 , C11D7/08 , C11D7/264 , C11D7/265 , C11D7/32 , C11D7/34 , C11D7/5004 , G03F7/425 , G03F7/426 , H01L21/02063
摘要： A method and composition for removing hardened photoresist, post-etch photoresist, and/or bottom anti-reflective coating from a microelectronic device is described. The composition may include a dense fluid, e.g., a supercritical fluid, and a dense fluid concentrate including a co-solvent, optionally a fluoride source, and optionally an acid. The dense fluid compositions substantially remove the contaminating residue and/or layers from the microelectronic device prior to subsequent processing, thus improving the morphology, performance, reliability and yield of the microelectronic device.
摘要翻译： 描述了用于从微电子器件去除硬化的光致抗蚀剂，蚀刻后光致抗蚀剂和/或底部抗反射涂层的方法和组合物。 组合物可以包括致密流体，例如超临界流体，以及包含共溶剂，任选的氟化物源和任选的酸的致密流体浓缩物。 致密的流体组合物在随后的处理之前基本上从微电子器件去除污染的残余物和/或层，从而改善微电子器件的形态，性能，可靠性和产量。
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10.发明授权公开(公告)号：US07011716B2
公开(公告)日：2006-03-14
申请号：US10249658
申请日：2003-04-29
IPC分类号： B08B3/08 , H01L21/302 , B23G1/34
CPC分类号： H01L21/02101
摘要： Drying of patterned wafers is achieved in a manner effecting removal of water from the patterned wafers without collapse or deterioration of the pattern structures thereof. The drying is carried out in one aspect of the invention with a composition containing supercritical fluid, and at least one water-reactive agent that chemically reacts with water to form reaction product(s) more soluble in the supercritical fluid than water. Various methodologies are described for use of supercritical fluids to dry patterned wafers, which avoid the (low water solubility) deficiency of supercritical fluids such as supercritical CO2.
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