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1.发明申请Method for fabricating improved sensor for a magnetic head utilizing reactive ion milling process 失效使用反应离子铣削工艺制造用于磁头的改进的传感器的方法公开(公告)号：US20060218776A1
公开(公告)日：2006-10-05
申请号：US11095979
申请日：2005-03-30
CPC分类号： G11B5/3903 , G11B5/3163 , Y10T29/49041 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A magnetic head fabrication process in which a stencil layer is deposited upon a plurality of sensor layers. A photoresist mask in the desired read track width is fabricated upon the stencil layer. A reactive ion milling step is then conducted to remove the unmasked portions of the stencil layer. Where the stencil layer is composed of an organic compound, such as Duramide and/or diamond-like-carbon, a reactive ion milling step utilizing oxygen species produces a stencil of the present invention having exceptionally straight side walls with practically no undercuts. Thereafter, an ion milling step is undertaken in which the sensor layers that are not covered by the stencil are removed. The accurately formed stencil results in correspondingly accurately formed side walls of the remaining central sensor layers. A magnetic head sensor structure having a desired read track width and accurately formed side walls is thus fabricated.
摘要翻译： 一种磁头制造工艺，其中模版层沉积在多个传感器层上。 在模板层上制造具有所需读取磁道宽度的光致抗蚀剂掩模。 然后进行反应离子研磨步骤以去除模板层的未掩模部分。 当模板层由有机化合物如Duramide和/或类金刚石碳构成时，利用氧气的反应离子研磨步骤产生具有非常直的侧壁的本发明的蜡纸，实际上没有底切。 此后，进行离子研磨步骤，其中未被模板覆盖的传感器层被去除。 准确地形成的模板导致剩余的中央传感器层的相应精确地形成的侧壁。 因此制造了具有期望的读取磁道宽度和精确形成的侧壁的磁头传感器结构。
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公开(公告)号：US20060043280A1
公开(公告)日：2006-03-02
申请号：US10930277
申请日：2004-08-30
IPC分类号： B01D59/44
CPC分类号： H01L22/20 , H01J2237/3114 , H01L21/31116 , H01L21/32136
摘要： A system for improving drift compensation for ion mill applications defines a reference step for purposes of time duration. The reference step is controlled by an end point detector and monitored for use with subsequent process steps. The time duration for a subsequent step is adjusted as a percentage of the reference step. A time scaling factor determines the actual duration of the subsequent step. Rather than directly using times of step duration, the system uses a percentage of the reference step for the latter step. The duration of the reference step varies depending on the tool drift. The overall duration is changed in the same proportion as the duration of the reference step, and thereby compensates for the influence of drift on the end product.
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公开(公告)号：US20060168794A1
公开(公告)日：2006-08-03
申请号：US11046421
申请日：2005-01-28
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3163 , G11B5/3903 , G11B5/398 , G11B2005/3996 , Y10T29/49021 , Y10T29/49032 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A method for constructing a magnetoresistive sensor that avoids shadowing effects of a mask structure during sensor definition. The method includes the use of an antireflective coating (ARC) and a photosensitive mask deposited there over. The photosensitive mask is formed to cover a desired sensor area, leaving non-sensor areas exposed. A reactive ion etch is performed to transfer the pattern of the photosensitive mask onto the underlying ARC layer. The reactive ion etch (RIE) is performed with a relatively high amount of platen power. The higher platen power increases ion bombardment of the wafer, thereby increasing the physical (ie mechanical) component of material removal relative to the chemical component. This increase in the physical component of material removal result in an increased rate of removal of the photosensitive mask material relative to the ion mill resistant mask. This avoids the formation of a bulbous or mushroom shaped photoresist mask and therefore, avoids shadowing effects during subsequent manufacturing processes.
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公开(公告)号：US20090007416A1
公开(公告)日：2009-01-08
申请号：US12177069
申请日：2008-07-21
IPC分类号： G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3163 , G11B5/3903 , G11B5/398 , G11B2005/3996 , Y10T29/49021 , Y10T29/49032 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A method for constructing a magnetoresistive sensor that avoids shadowing effects of a mask structure during sensor definition. The method includes the use of an antireflective coating (ARC) and a photosensitive mask deposited there over. The photosensitive mask is formed to cover a desired sensor area, leaving non-sensor areas exposed. A reactive ion etch is performed to transfer the pattern of the photosensitive mask onto the underlying ARC layer. The reactive ion etch (RIE) is performed with a relatively high amount of platen power. The higher platen power increases ion bombardment of the wafer, thereby increasing the physical (ie mechanical) component of material removal relative to the chemical component. This increase in the physical component of material removal result in an increased rate of removal of the photosensitive mask material relative to the ion mill resistant mask. This avoids the formation of a bulbous or mushroom shaped photoresist mask and therefore, avoids shadowing effects during subsequent manufacturing processes.
摘要翻译： 一种用于构造磁阻传感器的方法，其在传感器定义期间避免掩模结构的阴影效应。 该方法包括使用沉积在其上的抗反射涂层（ARC）和感光掩模。 形成光敏掩模以覆盖所需的传感器区域，使非传感器区域暴露。 执行反应离子蚀刻以将感光掩模的图案转移到下面的ARC层上。 反应离子蚀刻（RIE）以相对高的压板功率进行。 较高的压板功率增加晶片的离子轰击，从而增加相对于化学组分的材料去除的物理（即机械）组分。 材料去除的物理组分的这种增加导致感光掩模材料相对于耐磨离子磨损掩模的去除速率增加。 这避免了球形或蘑菇状光致抗蚀剂掩模的形成，因此避免了后续制造过程中的阴影效应。
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5.发明申请Magnetic head for hard disk drive having improved magnetic shield for MR sensor 失效用于硬盘驱动器的磁头具有改进的MR传感器磁屏蔽公开(公告)号：US20060002022A1
公开(公告)日：2006-01-05
申请号：US10883141
申请日：2004-06-30
CPC分类号： G11B5/127 , G11B5/3163 , Y10T29/49043 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A first magnetic shield layer of the read head sensor is deposited upon a slider substrate surface. A patterned photoresist is then photolithographically fabricated upon the first magnetic shield layer with openings that are formed alongside the location at which the read sensor will be fabricated. An ion milling step is performed to create pockets within the surface of the magnetic shield layer at the location of the openings in the photoresist layer. The photoresist layer is then removed, and a fill layer is deposited across the surface of the magnetic shield layer in a depth greater than the depth of the pocket. Thereafter, a polishing step is conducted to remove portions of the fill layer down to the surface of the magnetic shield layer. A G1 insulation layer is deposited and a magnetic head sensor element is then fabricated upon the insulation layer.
摘要翻译： 读头传感器的第一磁屏蔽层沉积在滑块基板表面上。 然后将图案化的光致抗蚀剂光刻地制造在具有开口的第一磁屏蔽层上，该开口沿着读取传感器将被制造的位置形成。 执行离子铣削步骤以在光致抗蚀剂层中的开口的位置处在磁屏蔽层的表面内产生凹坑。 然后去除光致抗蚀剂层，并且以大于凹穴深度的深度横跨磁屏蔽层的表面沉积填充层。 此后，进行抛光步骤以将填充层的部分向下移动到磁屏蔽层的表面。 沉积G1绝缘层，然后在绝缘层上制造磁头传感器元件。
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6.发明申请Perpendicular magnetic write head having a magnetic write pole with a concave trailing edge 有权具有磁写入磁极的垂直磁性写头具有凹形后缘公开(公告)号：US20070258167A1
公开(公告)日：2007-11-08
申请号：US11411556
申请日：2006-04-25
申请人： Donald Allen , Amanda Baer , Michael Feldbaum , Hung-Chin Guthrie , Wen-Chien Hsiao , Yimin Hsu , Ming Jiang , Yinshi Liu , Aron Neuhaus , Vladimir Nikitin , Aron Pentek , Katalin Pentek , Yi Zheng
发明人： Donald Allen , Amanda Baer , Michael Feldbaum , Hung-Chin Guthrie , Wen-Chien Hsiao , Yimin Hsu , Ming Jiang , Yinshi Liu , Aron Neuhaus , Vladimir Nikitin , Aron Pentek , Katalin Pentek , Yi Zheng
IPC分类号： G11B5/147
CPC分类号： G11B5/3116 , G11B5/11 , G11B5/1278 , G11B5/1871 , G11B5/3146 , G11B5/315 , G11B5/3163
摘要： A magnetic write head for perpendicular magnetic recording having a write pole with a concave trailing edge. The magnetic write pole can have a trapezoidal shape with first and second laterally opposed sides that are further apart at the trailing edge than at the leading edge. The write head may or may not include a magnetic trailing shield, and if a trailing shield is included it is separated from the trailing edge by a non-magnetic write gap layer. The concave trailing edge improves magnetic performance such as by improving the transition curvature. A method for constructing the write head includes forming a magnetic write pole by forming a mask structure over a deposited write pole material, the mask structure having an alumina hard mask and an image transfer layer such as DURAMIDE®. An alumina fill layer is then deposited and a chemical mechanical polish is performed to open up the image transfer layer. A reactive on etch is performed to remove the image transfer layer and a reactive ion mill or reactive ion etch is performed to remove the alumina hard mask and form a concave surface on the write pole.
摘要翻译： 用于垂直磁记录的磁写头，具有带有凹后缘的写极。 磁性写入极可以具有梯形形状，其中第一和第二横向相对侧在后缘处比在前缘处更远地分开。 写头可以包括或可以不包括磁性后屏蔽，并且如果包括后屏蔽，则其通过非磁性写间隙层与后缘分离。 凹形后边缘提高磁性能，例如通过改善转变曲率。 构成写入头的方法包括通过在沉积的写入极材料上形成掩模结构来形成磁性写入极，掩模结构具有氧化铝硬掩模和诸如DURAMIDE的图像转移层。 然后沉积氧化铝填充层，并执行化学机械抛光以打开图像转印层。 执行反应性蚀刻以去除图像转印层，并且执行反应性离子磨或反应离子蚀刻以除去氧化铝硬掩模并在写入极上形成凹面。
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公开(公告)号：US07275306B2
公开(公告)日：2007-10-02
申请号：US10735112
申请日：2003-12-12
CPC分类号： B82Y10/00 , G11B5/127 , G11B5/17 , G11B5/3116 , G11B5/313 , G11B5/3163 , G11B5/3967 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052 , Y10T29/4906 , Y10T29/49064 , Y10T29/49073
摘要： An improved damascene method of forming a write coil of a magnetic head. The method includes the steps of forming a hard mask layer over an insulator layer; forming a photoresist layer over the hard mask layer; performing an image patterning process to produce a write coil pattern in the photoresist layer; etching to remove portions of the hard mask layer in accordance with the write coil pattern; etching to remove portions of the insulator layer in accordance with the write coil pattern; etching to remove the remaining portion of the etched hard mask layer; after removing the etched hard mask layer, electroplating a material within the etched portion of the insulator material; and performing a chemical-mechanical polishing (CMP) process over the electroplated material. By removing the remainder of the hard mask material before the CMP, the quality of the CMP is improved.
摘要翻译： 一种形成磁头的写入线圈的改进的镶嵌方法。 该方法包括在绝缘体层上形成硬掩模层的步骤; 在所述硬掩模层上形成光致抗蚀剂层; 执行图像构图处理以在光致抗蚀剂层中产生写入线圈图案; 蚀刻以根据写入线圈图案去除硬掩模层的部分; 蚀刻以根据写入线圈图案去除绝缘体层的部分; 蚀刻以去除蚀刻的硬掩模层的剩余部分; 在去除蚀刻的硬掩模层之后，在绝缘体材料的蚀刻部分内电镀一种材料; 并对电镀材料进行化学机械抛光（CMP）处理。 通过在CMP之前除去硬掩模材料的其余部分，改善了CMP的质量。
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公开(公告)号：US20050125990A1
公开(公告)日：2005-06-16
申请号：US10735112
申请日：2003-12-12
CPC分类号： B82Y10/00 , G11B5/127 , G11B5/17 , G11B5/3116 , G11B5/313 , G11B5/3163 , G11B5/3967 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052 , Y10T29/4906 , Y10T29/49064 , Y10T29/49073
摘要： An improved damascene method of forming a write coil of a magnetic head includes forming a hard mask layer over an insulator layer; forming a photoresist layer over the hard mask layer; performing an image patterning process to produce a write coil pattern in the photoresist layer; etching to remove portions of the hard mask layer in accordance with the write coil pattern; etching to remove portions of the insulator layer in accordance with the write coil pattern; etching to remove the remaining portion of the etched hard mask layer; electroplating a material comprising copper (Cu) within the etched portion of the insulator material; and performing a chemical-mechanical polishing (CMP) process over the resulting structure. By removing the remainder of the hard mask material before the CMP, the quality of the CMP is improved. Although any suitable hard mask material may be utilized, if the insulator layer is a hard-baked resist then Ta2O5 having a relatively high selectivity, low brittleness, and improved adhesion is preferred as the hard mask material.
摘要翻译： 形成磁头的写入线圈的改进的镶嵌方法包括在绝缘体层上形成硬掩模层; 在所述硬掩模层上形成光致抗蚀剂层; 执行图像构图处理以在光致抗蚀剂层中产生写入线圈图案; 蚀刻以根据写入线圈图案去除硬掩模层的部分; 蚀刻以根据写入线圈图案去除绝缘体层的部分; 蚀刻以去除蚀刻的硬掩模层的剩余部分; 在绝缘体材料的蚀刻部分内电镀包含铜（Cu）的材料; 并对结果进行化学机械抛光（CMP）处理。 通过在CMP之前除去硬掩模材料的其余部分，改善了CMP的质量。 尽管可以使用任何合适的硬掩模材料，但是如果绝缘体层是硬烘烤抗蚀剂，则具有相对较高选择性，低脆性和改进的Ta 2 O 5 粘合作为硬掩模材料是优选的。
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公开(公告)号：US06383938B2
公开(公告)日：2002-05-07
申请号：US09295100
申请日：1999-04-21
IPC分类号： H01L21302
CPC分类号： H01L21/30655
摘要： A method of plasma etching of silicon that utilizes the plasma to provide laterally defined recess structures through a mask. The method is based on the variation of the plasma parameters to provide a well-controlled anisotropic etch, while achieving a very high etch rate, and a high selectivity with respect to a mask. A mixed gas is introduced into the vacuum chamber after the chamber is evacuated, and plasma is generated within the chamber. The substrate's surface is exposed to the plasma. Power sources are used for formation of the plasma discharge. An integrated control system is used to modulate the plasma discharge power and substrate polarization voltage levels.
摘要翻译： 利用等离子体通过掩模提供横向限定的凹陷结构的等离子体蚀刻硅的方法。 该方法基于等离子体参数的变化，以提供良好控制的各向异性蚀刻，同时实现非常高的蚀刻速率和相对于掩模的高选择性。 在室抽真空之后，将混合气体引入真空室中，并且在室内产生等离子体。 衬底的表面暴露于等离子体。 电源用于形成等离子体放电。 使用集成控制系统来调制等离子体放电功率和衬底极化电压电平。
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公开(公告)号：US08393073B2
公开(公告)日：2013-03-12
申请号：US12177069
申请日：2008-07-21
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3163 , G11B5/3903 , G11B5/398 , G11B2005/3996 , Y10T29/49021 , Y10T29/49032 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A method for constructing a magnetoresistive sensor that avoids shadowing effects of a mask structure during sensor definition. The method includes the use of an antireflective coating (ARC) and a photosensitive mask deposited there over. The photosensitive mask is formed to cover a desired sensor area, leaving non-sensor areas exposed. A reactive ion etch is performed to transfer the pattern of the photosensitive mask onto the underlying ARC layer. The reactive ion etch (RIE) is performed with a relatively high amount of platen power. The higher platen power increases ion bombardment of the wafer, thereby increasing the physical (ie mechanical) component of material removal relative to the chemical component. This increase in the physical component of material removal result in an increased rate of removal of the photosensitive mask material relative to the ion mill resistant mask. This avoids the formation of a bulbous or mushroom shaped photoresist mask and therefore, avoids shadowing effects during subsequent manufacturing processes.
摘要翻译： 一种用于构造磁阻传感器的方法，其在传感器定义期间避免掩模结构的遮蔽效应。 该方法包括使用沉积在其上的抗反射涂层（ARC）和感光掩模。 形成光敏掩模以覆盖所需的传感器区域，使非传感器区域暴露。 执行反应离子蚀刻以将感光掩模的图案转移到下面的ARC层上。 反应离子蚀刻（RIE）以相对高的压板功率进行。 较高的压板功率增加晶片的离子轰击，从而增加相对于化学组分的材料去除的物理（即机械）组分。 材料去除的物理组分的这种增加导致感光掩模材料相对于耐磨离子磨损掩模的去除速率增加。 这避免了球形或蘑菇状光致抗蚀剂掩模的形成，因此避免了后续制造过程中的阴影效应。
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