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公开(公告)号：US20120161321A1
公开(公告)日：2012-06-28
申请号：US12978359
申请日：2010-12-23
IPC分类号： H01L23/482 , H01L21/3205 , H01L21/283 , B82Y40/00 , B82Y99/00
CPC分类号： H01L29/41791 , H01L21/283 , H01L21/3205 , H01L23/482 , H01L23/485 , H01L29/0895 , H01L29/456 , H01L29/7851 , H01L2924/0002 , H01L2924/00
摘要： Techniques are disclosed for forming contacts in silicon semiconductor devices. In some embodiments, a transition layer forms a non-reactive interface with the silicon semiconductor contact surface. In some such cases, a conductive material provides the contacts and the material forming a non-reactive interface with the silicon surface. In other cases, a thin semiconducting or insulting layer provides the non-reactive interface with the silicon surface and is coupled to conductive material of the contacts. The techniques can be embodied, for instance, in planar or non-planar (e.g., double-gate and tri-gate FinFETs) transistor devices.
摘要翻译： 公开了用于在硅半导体器件中形成接触的技术。 在一些实施例中，过渡层与硅半导体接触表面形成非反应性界面。 在一些这种情况下，导电材料提供触点和与硅表面形成非反应性界面的材料。 在其他情况下，薄的半导体或绝缘层提供与硅表面的非反应性界面并且耦合到触点的导电材料。 这些技术可以例如在平面或非平面（例如，双栅极和三栅极FinFET））晶体管器件中实现。
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公开(公告)号：US09166004B2
公开(公告)日：2015-10-20
申请号：US12978359
申请日：2010-12-23
IPC分类号： H01L29/78 , H01L21/02 , H01L23/48 , H01L23/52 , H01L29/40 , H01L21/3205 , H01L21/4763 , H01L21/44 , H01L29/08 , H01L23/485 , H01L29/45 , H01L23/482 , H01L21/283
CPC分类号： H01L29/41791 , H01L21/283 , H01L21/3205 , H01L23/482 , H01L23/485 , H01L29/0895 , H01L29/456 , H01L29/7851 , H01L2924/0002 , H01L2924/00
摘要： Techniques are disclosed for forming contacts in silicon semiconductor devices. In some embodiments, a transition layer forms a non-reactive interface with the silicon semiconductor contact surface. In some such cases, a conductive material provides the contacts and the material forming a non-reactive interface with the silicon surface. In other cases, a thin semiconducting or insulating layer provides the non-reactive interface with the silicon surface and is coupled to conductive material of the contacts. The techniques can be embodied, for instance, in planar or non-planar (e.g., double-gate and tri-gate FinFETs) transistor devices.
摘要翻译： 公开了用于在硅半导体器件中形成接触的技术。 在一些实施例中，过渡层与硅半导体接触表面形成非反应性界面。 在一些这种情况下，导电材料提供触点和与硅表面形成非反应性界面的材料。 在其他情况下，薄的半导体或绝缘层提供与硅表面的非反应性界面并且耦合到触点的导电材料。 这些技术可以例如在平面或非平面（例如，双栅极和三栅极FinFET））晶体管器件中实现。
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公开(公告)号：US20090004463A1
公开(公告)日：2009-01-01
申请号：US11769108
申请日：2007-06-27
CPC分类号： H01L23/53238 , C23C14/046 , C23C14/16 , C23C14/584 , C23C28/322 , C23C28/34 , C23C28/341 , C23C28/345 , C23C28/3455 , H01L21/76841 , H01L21/76843 , H01L2924/0002 , Y10T428/26 , Y10T428/261 , Y10T428/31678 , H01L2924/00
摘要： Techniques for reducing resistivity in metal interconnects using interface control are generally described. In one example, an apparatus includes a dielectric substrate, a barrier film coupled with the dielectric substrate, a liner film of a selected material coupled with the barrier film, and a metal coupled with the liner film defining an interface region between the metal and the liner film, the material of the liner film being selected to provide an interface density of state about equal to or less than ten times the density of state of the metal in bulk form.
摘要翻译： 通常使用界面控制来降低金属互连的电阻率的技术。 在一个示例中，设备包括电介质基板，与电介质基板耦合的阻挡膜，与阻挡膜耦合的选定材料的衬垫膜以及与衬垫膜耦合的金属，该金属限定金属和 衬里膜选择衬垫膜的材料以提供约等于或小于块状形式的金属状态密度的十倍的界面密度。
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4.发明申请公开(公告)号：US20090001591A1
公开(公告)日：2009-01-01
申请号：US11771476
申请日：2007-06-29
IPC分类号： H01L23/52 , H01L21/4763
CPC分类号： H01L23/485 , H01L21/76801 , H01L21/76843 , H01L21/76849 , H01L21/76877 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： Techniques for reducing resistivity in metal interconnects by compressive straining are generally described. In one example, an apparatus includes a dielectric substrate, a thin film of metal coupled with the dielectric substrate, and an interconnect metal coupled to the thin film of metal, the thin film of metal having a lattice parameter that is smaller than the lattice parameter of the interconnect metal to compressively strain the interconnect metal.
摘要翻译： 通常描述通过压缩应变来降低金属互连中的电阻率的技术。 在一个示例中，设备包括电介质基板，与电介质基板耦合的金属薄膜和耦合到金属薄膜的互连金属，金属薄膜具有小于晶格参数的晶格参数 的互连金属，以压缩互连金属。
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