SRAM cell with p-channel pull-up sources connected to bit lines
    4.
    发明授权
    SRAM cell with p-channel pull-up sources connected to bit lines 失效
    具有p位上拉源的SRAM单元连接到位线

    公开(公告)号:US6011711A

    公开(公告)日:2000-01-04

    申请号:US775141

    申请日:1996-12-31

    IPC分类号: G11C11/412 G11C11/00

    CPC分类号: G11C11/412

    摘要: A static random access memory cell comprising a storage latch having a first upper power supply voltage connection to a first bit line, a second upper power supply voltage connection to a second bit line, and a connection to a lower power supply voltage. A first access circuit connects the storage latch to the first bit line and a second access circuit connects the storage latch to the second bit line, wherein the storage latch is accessed utilizing the first access circuit and the second access circuit.

    摘要翻译: 一种静态随机存取存储单元,包括具有与第一位线的第一上电源电压连接的存储锁存器,到第二位线的第二上电源电压连接以及与较低电源电压的连接。 第一访问电路将存储锁存器连接到第一位线,而第二存取电路将存储锁存器连接到第二位线,其中使用第一存取电路和第二存取电路访问存储锁存器。