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公开(公告)号：US07230274B2
公开(公告)日：2007-06-12
申请号：US10790406
申请日：2004-03-01
CPC分类号： C30B25/02 , C03B23/02 , C30B29/36 , H01L21/02019 , H01L21/30621
摘要： Single crystal silicon carbide epitaxial layer on an off-axis substrate are manufactured by placing the substrate in an epitaxial growth reactor, growing a first layer of epitaxial silicon carbide on the substrate, interrupting the growth of the first layer of epitaxial silicon carbide, etching the first layer of epitaxial silicon carbide to reduce the thickness of the first layer, and regrowing a second layer of epitaxial silicon carbide on the first layer of epitaxial silicon carbide. Carrot defects may be terminated by the process of interrupting the epitaxial growth process, etching the grown layer and regrowing a second layer of epitaxial silicon carbide. The growth interruption/etching/regrowth may be repeated multiple times. A silicon carbide epitaxial layer has at least one carrot defect that is terminated within the epitaxial layer. A semiconductor structure includes an epitaxial layer of silicon carbide on an off-axis silicon carbide substrate, and a carrot defect having a nucleation point in the vicinity of an interface between the substrate and the epitaxial layer and is terminated within the epitaxial layer.
摘要翻译： 通过将衬底放置在外延生长反应器中，在衬底上生长第一层外延碳化硅，中断外延碳化硅的第一层的生长，蚀刻外延碳化硅的第一层，制造脱轴衬底上的单晶碳化硅外延层 第一层外延碳化硅以减小第一层的厚度，以及在第一层外延碳化硅上再生第二层外延碳化硅。 胡萝卜缺陷可以通过中断外延生长过程，蚀刻生长层和再生第二层外延碳化硅的过程来终止。 生长中断/蚀刻/再生长可以重复多次。 碳化硅外延层具有端接在外延层内的至少一个胡萝卜缺陷。 半导体结构包括在偏轴碳化硅衬底上的碳化硅外延层和在衬底和外延层之间的界面附近具有成核点的胡萝卜缺陷，并且终止在外延层内。
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2.发明授权Deposition systems and susceptor assemblies for depositing a film on a substrate 有权用于在衬底上沉积膜的沉积系统和感受器组件公开(公告)号：US08430960B2
公开(公告)日：2013-04-30
申请号：US11512800
申请日：2006-08-29
IPC分类号： C23C16/455 , C23C16/458 , C23C16/46 , C23C16/507 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： C23C16/45519 , C23C16/4401 , C23C16/455 , C23C16/488
摘要： Parasitic deposits are controlled in a deposition system for depositing a film on a substrate, the deposition system of the type defining a reaction chamber for receiving the substrate and including a process gas in the reaction chamber and an interior surface contiguous with the reaction chamber. Such control is provided by flowing a buffer gas between the interior surface and at least a portion of the process gas to form a gas barrier layer such that the gas barrier layer inhibits contact between the interior surface and components of the process gas. A deposition system for depositing a film on a substrate using a process gas includes a reaction chamber adapted to receive the substrate and the process gas. The system further includes an interior surface contiguous with the reaction chamber. A buffer gas supply system is adapted to supply a flow of a buffer gas between the interior surface and at least a portion of the process gas such that the flow of the buffer gas forms a gas barrier layer to inhibit contact between the interior surface and components of the process gas when the process gas is disposed in the reaction chamber.
摘要翻译： 寄生沉积物在用于在基底上沉积膜的沉积系统中进行控制，所述沉积系统的类型限定用于接收基底的反应室，并且在反应室中包括处理气体和与反应室邻接的内表面。 通过在内表面和至少一部分处理气体之间流动缓冲气体以形成阻气层来提供这种控制，使得气体阻隔层抑制处理气体的内表面和组分之间的接触。 用于使用工艺气体在衬底上沉积膜的沉积系统包括适于接收衬底和工艺气体的反应室。 该系统还包括与反应室邻接的内表面。 缓冲气体供应系统适于在内表面和处理气体的至少一部分之间提供缓冲气体流，使得缓冲气体的流动形成阻气层，以阻止内表面和部件之间的接触 当处理气体设置在反应室中时，该工艺气体。
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3.发明授权Methods for controlling formation of deposits in a deposition system and deposition methods including the same 有权用于控制沉积系统中沉积物形成的方法和包括其的沉积方法公开(公告)号：US07118781B1
公开(公告)日：2006-10-10
申请号：US10414787
申请日：2003-04-16
IPC分类号： C23C16/00
CPC分类号： C23C16/45519 , C23C16/4401 , C23C16/455 , C23C16/488
摘要： A method for controlling parasitic deposits in a deposition system for depositing a film on a substrate, the deposition system defining a reaction chamber for receiving the substrate and including a process gas in the reaction chamber and an interior surface contiguous with the reaction chamber, includes flowing a buffer gas between the interior surface and at least a portion of the process gas to form a gas barrier layer such that the gas barrier layer inhibits contact between the interior surface and components of the process gas.
摘要翻译： 一种用于控制用于在衬底上沉积膜的沉积系统中的寄生沉积物的方法，所述沉积系统限定用于接收衬底并在反应室中包括工艺气体和与反应室邻接的内表面的反应室，包括流动 在所述内表面和所述处理气体的至少一部分之间形成缓冲气体，以形成阻气层，使得所述阻气层抑制所述内表面和所述工艺气体的组分之间的接触。
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公开(公告)号：US09903046B2
公开(公告)日：2018-02-27
申请号：US11745817
申请日：2007-05-08
IPC分类号： H01L21/302 , H01L21/461 , B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00 , C23F3/00 , C30B25/02 , C03B23/02 , H01L21/02 , H01L21/306 , C30B29/36
CPC分类号： C30B25/02 , C03B23/02 , C30B29/36 , H01L21/02019 , H01L21/30621
摘要： Single crystal silicon carbide epitaxial layer on an off-axis substrate are manufactured by placing the substrate in an epitaxial growth reactor, growing a first layer of epitaxial silicon carbide on the substrate, interrupting the growth of the first layer of epitaxial silicon carbide, etching the first layer of epitaxial silicon carbide to reduce the thickness of the first layer, and regrowing a second layer of epitaxial silicon carbide on the first layer of epitaxial silicon carbide. Carrot defects may be terminated by the process of interrupting the epitaxial growth process, etching the grown layer and regrowing a second layer of epitaxial silicon carbide. The growth interruption/etching/regrowth may be repeated multiple times. A silicon carbide epitaxial layer has at least one carrot defect that is terminated within the epitaxial layer. A semiconductor stricture includes an epitaxial layer of silicon carbide on an off-axis silicon carbide substrate, and a carrot defect having a nucleation point in the vicinity of an interface between the substrate and the epitaxial layer and is terminated within the epitaxial layer.
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公开(公告)号：US08052794B2
公开(公告)日：2011-11-08
申请号：US11224374
申请日：2005-09-12
CPC分类号： C23C16/4584 , C23C16/45514 , C23C16/45563 , C30B25/02 , C30B25/12 , C30B25/14 , C30B29/36
摘要： A method for locally controlling the stoichiometry of an epitaxially deposited layer on a semiconductor substrate is provided. The method includes directing a first reactant gas and a doping gas across a top surface of a semiconductor substrate and directing a drive gas and a second reactant gas against the substrate separately from the first reactant gas in a manner that rotates the substrate while introducing the second reactant gas at an edge of the substrate to control each reactant separately, thereby compensating and controlling depletion effects and improving doping uniformity in resulting epitaxial layers on the substrate.
摘要翻译： 提供了一种用于局部控制半导体衬底上的外延沉积层的化学计量的方法。 该方法包括：引导第一反应气体和掺杂气体穿过半导体衬底的顶表面，并将驱动气体和第二反应气体以与第一反应气体分离的方式引导基板，同时引导第二反应气体 在衬底的边缘处的反应气体，以分别控制每个反应物，由此补偿和控制耗尽效应并改善衬底上所得到的外延层中的掺杂均匀性。
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6.发明授权Silicon carbide semiconductor structures including multiple epitaxial layers having sidewalls 有权包括具有侧壁的多个外延层的碳化硅半导体结构公开(公告)号：US07109521B2
公开(公告)日：2006-09-19
申请号：US10929911
申请日：2004-08-30
IPC分类号： H01L31/0312 , H01L29/38
CPC分类号： H01L21/02378 , H01L21/0243 , H01L21/02433 , H01L21/02529 , H01L21/02639 , Y10S438/931
摘要： An epitaxial silicon carbide layer is fabricated by forming first features in a surface of a silicon carbide substrate having an off-axis orientation toward a crystallographic direction. The first features include at least one sidewall that is orientated nonparallel (i.e., oblique or perpendicular) to the crystallographic direction. A first epitaxial silicon carbide layer is then grown on the surface of the silicon carbide substrate that includes first features therein. Second features are then formed in the first epitaxial layer. The second features include at least one sidewall that is oriented nonparallel to the crystallographic direction. A second epitaxial silicon carbide layer is then grown on the surface of the first epitaxial silicon carbide layer that includes the second features therein.
摘要翻译： 外延碳化硅层通过在具有离轴取向朝向晶体方向的碳化硅衬底的表面中形成第一特征来制造。 第一特征包括至少一个与结晶方向不平行（即倾斜或垂直）的侧壁。 然后在包括其中的第一特征的碳化硅衬底的表面上生长第一外延碳化硅层。 然后在第一外延层中形成第二特征。 第二特征包括至少一个不平行于晶体学方向的侧壁。 然后在包括其中的第二特征的第一外延碳化硅层的表面上生长第二外延碳化硅层。
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公开(公告)号：US20090136686A1
公开(公告)日：2009-05-28
申请号：US12121072
申请日：2008-05-15
IPC分类号： H05B6/02
CPC分类号： H05B6/108 , C23C16/4581 , C23C16/46 , C30B25/10
摘要： A heating device for controllably heating an article defines a processing chamber to hold the article and includes a housing and an EMF generator. The housing includes a susceptor portion surrounding at least a portion of the processing chamber, and a conductor portion interposed between the susceptor portion and the processing chamber. The EMF generator is operable to induce eddy currents within the susceptor portion such that substantially no eddy currents are induced in the conductor portion. The conductor portion is operative to conduct heat from the susceptor portion to the processing chamber. The heating device may further include a platter and an opening defined in the conductor portion, wherein the opening is interposed between the susceptor portion and the platter.
摘要翻译： 用于可控制地加热制品的加热装置限定处理室以保持物品并且包括壳体和EMF发生器。 壳体包括围绕处理室的至少一部分的基座部分和插入在基座部分和处理室之间的导体部分。 EMF发生器可操作以在基座部分内感应涡流，使得在导体部分中基本上没有感应出涡流。 导体部分可操作以将热量从基座部分传导到处理室。 加热装置还可以包括盘片和限定在导体部分中的开口，其中开口插入在基座部分和盘片之间。
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8.发明授权Housing assembly for an induction heating device including liner or susceptor coating 有权用于感应加热装置的壳体组件，包括衬套或基座涂层公开(公告)号：US07390367B1
公开(公告)日：2008-06-24
申请号：US10714214
申请日：2003-11-14
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306 , H05B6/10
CPC分类号： H05B6/108 , C23C16/4581 , C23C16/46 , C30B25/10
摘要： A housing assembly for an induction heating device defines a processing chamber and includes a susceptor and a thermally conductive liner. The susceptor surrounds at least a portion of the processing chamber. The thermally conductive liner is interposed between the susceptor and the processing chamber. The liner is separately formed form the susceptor. The liner is removable from the susceptor without requiring disassembly of the susceptor.
摘要翻译： 用于感应加热装置的壳体组件限定处理室并且包括感受器和导热衬垫。 感受器围绕处理室的至少一部分。 导热衬垫介于基座和处理室之间。 衬垫从基座分开形成。 衬垫可以从基座上移除，而不需要拆卸感受器。
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9.发明授权公开(公告)号：US06896738B2
公开(公告)日：2005-05-24
申请号：US10017492
申请日：2001-10-30
IPC分类号： H05B6/10 , C23C16/458 , C23C16/46 , C30B25/10 , H01L21/205 , H05B6/02 , H01L21/00 , C23C16/00
CPC分类号： H05B6/108 , C23C16/4581 , C23C16/46 , C30B25/10
摘要： A heating device for controllably heating an article defines a processing chamber to hold the article and includes a housing and an EMF generator. The housing includes a susceptor portion surrounding at least a portion of the processing chamber, and a conductor portion interposed between the susceptor portion and the processing chamber. The EMF generator is operable to induce eddy currents within the susceptor portion such that substantially no eddy currents are induced in the conductor portion. The conductor portion is operative to conduct heat from the susceptor portion to the processing chamber. The heating device may further include a platter and an opening defined in the conductor portion, wherein the opening is interposed between the susceptor portion and the platter.
摘要翻译： 用于可控制地加热制品的加热装置限定处理室以保持物品并且包括壳体和EMF发生器。 壳体包括围绕处理室的至少一部分的基座部分和插入在基座部分和处理室之间的导体部分。 EMF发生器可操作以在基座部分内感应涡流，使得在导体部分中基本上没有感应出涡流。 导体部分可操作以将热量从基座部分传导到处理室。 加热装置还可以包括盘片和限定在导体部分中的开口，其中开口插入在基座部分和盘片之间。
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10.发明申请HOUSING ASSEMBLY FOR AN INDUCTION HEATING DEVICE INCLUDING LINER OR SUSCEPTOR COATING 有权一种用于包括衬里或SUSCEPTOR涂层的感应加热装置的外壳组件公开(公告)号：US20080127894A1
公开(公告)日：2008-06-05
申请号：US10714214
申请日：2003-11-14
CPC分类号： H05B6/108 , C23C16/4581 , C23C16/46 , C30B25/10
摘要： A housing assembly for an induction heating device defines a processing chamber and includes a susceptor and a thermally conductive liner. The susceptor surrounds at least a portion of the processing chamber. The thermally conductive liner is interposed between the susceptor and the processing chamber. The liner is separately formed form the susceptor. The liner is removable from the susceptor without requiring disassembly of the susceptor.
摘要翻译： 用于感应加热装置的壳体组件限定处理室并且包括感受器和导热衬垫。 感受器围绕处理室的至少一部分。 导热衬垫介于基座和处理室之间。 衬垫从基座分开形成。 衬垫可以从基座上移除，而不需要拆卸感受器。
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