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公开(公告)号：US06727195B2
公开(公告)日：2004-04-27
申请号：US09777457
申请日：2001-02-06
IPC分类号： H01L21336
CPC分类号： H01L27/11521 , H01L21/76802 , H01L23/528 , H01L27/115 , H01L2924/0002 , Y10S438/945 , Y10S438/946 , Y10S438/947 , H01L2924/00
摘要： A method and system for providing a semiconductor device is disclosed. The method and system include providing a semiconductor substrate and providing a plurality of lines separated by a plurality of spaces. Each of the plurality of spaces preferably has a first width that is less than a minimum feature size. In one aspect, the method and system include providing a reverse mask having a plurality of apertures on an insulating layer. In this aspect, the method and system also include trimming the reverse mask to increase a size of each of the plurality of apertures, removing a portion of the insulating layer exposed by the plurality of trimmed apertures to provide a plurality of trenches and providing a plurality of lines in the plurality of trenches. In a second aspect, the method and system include providing a reverse mask on the insulating layer and removing a first portion of the insulating layer exposed by the plurality of apertures to provide a plurality of trenches. The reverse mask includes a plurality of apertures having a first width. Each of the plurality of trenches has a width. In this aspect, the method and system also include trimming a second portion of the insulating layers to increase the width of each of the plurality of trenches and providing a plurality of lines in the plurality of trenches.
摘要翻译： 公开了一种用于提供半导体器件的方法和系统。 该方法和系统包括提供半导体衬底并提供由多个空间隔开的多条线。 多个空间中的每一个优选地具有小于最小特征尺寸的第一宽度。 在一个方面，该方法和系统包括在绝缘层上提供具有多个孔的反向掩模。 在这方面，该方法和系统还包括修整反向掩模以增加多个孔中的每一个的尺寸，去除由多个修剪的孔暴露的绝缘层的一部分以提供多个沟槽并提供多个 的多个沟槽中的线。 在第二方面，所述方法和系统包括在绝缘层上提供反向掩模，并且去除由多个孔暴露的绝缘层的第一部分以提供多个沟槽。 反向掩模包括具有第一宽度的多个孔。 多个沟槽中的每一个具有宽度。 在这方面，该方法和系统还包括修整绝缘层的第二部分以增加多个沟槽中的每一个的宽度并且在多个沟槽中提供多条线。
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2.发明授权Method and system for providing contacts with greater tolerance for misalignment in a flash memory 有权用于提供触点的方法和系统，其具有对于闪存中未对准的更大容限公开(公告)号：US06445051B1
公开(公告)日：2002-09-03
申请号：US09563797
申请日：2000-05-02
申请人： Mark S. Chang , Hao Fang , King Wai Kelwin Ko , John Jianshi Wang , Michael K. Templeton , Lu You , Angela T. Hui
发明人： Mark S. Chang , Hao Fang , King Wai Kelwin Ko , John Jianshi Wang , Michael K. Templeton , Lu You , Angela T. Hui
IPC分类号： H01L2976
CPC分类号： H01L21/76897 , H01L21/28273
摘要： A method and system for providing a plurality of contacts in a flash memory device is disclosed. The flash memory device includes a plurality of gate stacks and a plurality of field insulating regions adjacent to a portion of the plurality of gate stacks. The method and system include providing an etch stop layer covering the plurality of field insulating regions. The etch stop layer has an etch selectivity different from a field insulating region etch selectivity of the plurality of field insulating regions. The method and system also include providing an insulating layer covering the plurality of gate stacks, the plurality of field insulating regions and the etch stop layer. The method and system further include etching the insulating layer to provide a plurality of contact holes. The insulating layer etching step uses the etch stop layer to ensure that the insulating etching step does not etch through the plurality of field insulating regions. The method and system also include filling the plurality of contact holes with a conductor.
摘要翻译： 公开了一种用于在闪速存储器件中提供多个触点的方法和系统。 闪存器件包括多个栅极堆叠和与多个栅极堆叠的一部分相邻的多个场绝缘区域。 该方法和系统包括提供覆盖多个场绝缘区域的蚀刻停止层。 蚀刻停止层具有与多个场绝缘区域的场绝缘区蚀刻选择性不同的蚀刻选择性。 该方法和系统还包括提供覆盖多个栅极叠层，多个场绝缘区域和蚀刻停止层的绝缘层。 该方法和系统还包括蚀刻绝缘层以提供多个接触孔。 绝缘层蚀刻步骤使用蚀刻停止层来确保绝缘蚀刻步骤不会蚀刻穿过多个场绝缘区域。 该方法和系统还包括用导体填充多个接触孔。
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公开(公告)号：US6093967A
公开(公告)日：2000-07-25
申请号：US992573
申请日：1997-12-17
IPC分类号： H01L21/285 , H01L23/54 , H01L21/441
CPC分类号： H01L21/28518
摘要： Self-aligned silicide contacts having a height that is at least about equal to the gate height are formed by depositing silicon over active regions of the substrate, depositing a refractory metal over the silicon, and heating the silicon and the refractory metal. The deposited silicon may be amorphous silicon in which case the deposition temperature can be as low as 580.degree. C. If polysilicon is deposited, the deposition temperature has to be at least 620.degree. C.
摘要翻译： 通过在衬底的有源区上沉积硅，在硅上沉积难熔金属，并加热硅和难熔金属，形成具有至少约等于栅极高度的高度的自对准硅化物触点。 沉积的硅可以是非晶硅，在这种情况下，沉积温度可以低至580℃。如果沉积多晶硅，则沉积温度必须至少为620℃。
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公开(公告)号：US07153364B1
公开(公告)日：2006-12-26
申请号：US10000208
申请日：2001-10-23
申请人： Bharath Rangarajan , Ramkumar Subramanian , Khoi A. Phan , Ursula Q. Quinto , Michael K. Templeton
发明人： Bharath Rangarajan , Ramkumar Subramanian , Khoi A. Phan , Ursula Q. Quinto , Michael K. Templeton
CPC分类号： H01L21/6715 , B05B15/50 , B05C11/08
摘要： The present invention provides a system and methodology for dummy-dispensing resist though a dispense head while mitigating waste associated with the dummy-dispense process. The dummy dispensed resist is returned to a reservoir from which it was taken. Between substrate applications, the dispense head can be positioned to dispense resist into a return line. The flow of resist from the dispense head keeps resist from drying at the dispense head. By funneling the dummy-dispensed resist into a return line with low volume, for example, waste from the dummy-dispensing process can be mitigated.
摘要翻译： 本发明提供了一种用于分配头的虚拟分配抗蚀剂的系统和方法，同时减轻与虚拟分配过程相关的废物。 虚拟分配的抗蚀剂返回到被采集的储存器。 在基板应用之间，分配头可以被定位成将抗蚀剂分配到返回线中。 来自分配头的抗蚀剂的流动在分配头保持抗干燥。 通过将虚拟分配的抗蚀剂漏出到具有低体积的返回管线中，例如，可以减轻来自虚拟分配过程的废物。
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公开(公告)号：US07145653B1
公开(公告)日：2006-12-05
申请号：US09591017
申请日：2000-06-09
IPC分类号： G01N21/00
CPC分类号： G01N21/5907 , G01N15/0205 , G01N21/94 , G01N21/9501 , G01N2021/5961 , G01N2021/8411 , H01L22/10
摘要： A system and method is provided for monitoring and controlling the contaminant particle count contained in an aerosol during a photoresist coating and/or development process of a semiconductor. The monitoring system monitors the contaminate particle count present in the environment of the photoresist coating and/or development process, such as in a process chamber or a cup, enclosing the wafer during the process. The present invention employs in situ laser scattering or laser doppler anemometry techniques to detect the particle count level in the chamber or cup. A plurality of lasers and detectors can be positioned at different heights in or outside of a chamber or cup to facilitate detecting particles at different height levels. A laser could be used in conjunction with mirrors to provide a similar measurement. The particle count level can be used to compare with the defect level, so that it can be determined if a cleaner environment and/or process should be implemented.
摘要翻译： 提供了一种系统和方法，用于在半导体的光致抗蚀剂涂覆和/或显影过程期间监测和控制包含在气溶胶中的污染物颗粒数。 监测系统监测光致抗蚀剂涂层和/或显影过程环境中存在的污染颗粒数，例如在处理室或杯中，在处理过程中包围晶片。 本发明采用原位激光散射或激光多普勒血流计技术来检测腔室或杯子中的颗粒计数水平。 多个激光器和检测器可以位于室或杯内或室外的不同高度处，以便于检测不同高度水平的颗粒。 激光可以与镜子一起使用以提供类似的测量。 可以使用粒子计数水平与缺陷水平进行比较，以便可以确定是否应实施更清洁的环境和/或过程。
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公开(公告)号：US07078348B1
公开(公告)日：2006-07-18
申请号：US09893188
申请日：2001-06-27
IPC分类号： H01L21/302 , H01L21/3065
CPC分类号： H01L21/31144 , H01L21/76807 , H01L21/76811 , H01L21/76813
摘要： One aspect of the present invention relates to a method for making a dual damascene pattern in an insulative layer in a single etch process involving providing a wafer having at least one insulative layer formed thereon; depositing a first photoresist layer over the at least one insulative layer; patterning a first image into the first photoresist layer; curing the first patterned photoresist layer; depositing a second photoresist layer over the first patterned photoresist layer; patterning a second image into the second photoresist layer; and etching the at least one insulative layer through the first patterned photoresist layer and the second patterned photoresist layer simultaneously in the single etch process.
摘要翻译： 本发明的一个方面涉及在单一蚀刻工艺中在绝缘层中制造双镶嵌图案的方法，该方法包括提供其上形成有至少一个绝缘层的晶片; 在所述至少一个绝缘层上沉积第一光致抗蚀剂层; 将第一图像图案化成第一光致抗蚀剂层; 固化第一图案化光致抗蚀剂层; 在所述第一图案化光致抗蚀剂层上沉积第二光致抗蚀剂层; 将第二图像图案化成第二光致抗蚀剂层; 以及在单次蚀刻工艺中同时蚀刻通过第一图案化光致抗蚀剂层和第二图案化光致抗蚀剂层的至少一个绝缘层。
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公开(公告)号：US06746822B1
公开(公告)日：2004-06-08
申请号：US10050484
申请日：2002-01-16
IPC分类号： G03F720
CPC分类号： G03F7/265 , H01L21/0273 , H01L21/31144 , H01L21/32139
摘要： Disclosed are methods of processing a semiconductor structure, involving the steps of depositing a light-degradable surface coupling agent on a semiconductor substrate; depositing a resist over the light-degradable surface coupling agent; irradiating portions of the resist, wherein the light-degradable surface coupling agent under the irradiated portions of the resist at least partially decomposes; and developing the resist.
摘要翻译： 公开了处理半导体结构的方法，包括在半导体衬底上沉积可光降解的表面偶联剂的步骤; 在光可降解表面偶联剂上沉积抗蚀剂; 照射抗蚀剂的部分，其中抗蚀剂照射部分下的可光降解表面偶联剂至少部分分解; 并开发抗蚀剂。
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公开(公告)号：US06629786B1
公开(公告)日：2003-10-07
申请号：US09845232
申请日：2001-04-30
IPC分类号： G03D500
CPC分类号： G03D5/00
摘要： A system for regulating the time and temperature of a development process is provided. The system includes one or more light sources, each light source directing light to one or more gratings being developed on a wafer. Light reflected from the gratings is collected by a measuring system, which processes the collected light. Light passing through the gratings may similarly be collected by the measuring system, which processes the collected light. The collected light is indicative of the progress of development of the respective portions of the wafer. The measuring system provides progress of development related data to a processor that determines the progress of development of the respective portions of the wafer. The system also includes a plurality of heating devices, each heating device corresponds to a respective portion of the developer and provides for the heating thereof. The processor selectively controls the heating devices so as to regulate temperature of the respective portions of the wafer.
摘要翻译： 提供了一种用于调节开发过程的时间和温度的系统。 该系统包括一个或多个光源，每个光源将光引导到在晶片上显影的一个或多个光栅。 从光栅反射的光被测量系统收集，该系统处理收集的光。 通过光栅的光可以类似地由处理所收集的光的测量系统收集。 所收集的光表示晶片的各个部分的显影进展。 该测量系统提供开发相关数据的进展到处理器，该处理器确定晶片的相应部分的开发进度。 该系统还包括多个加热装置，每个加热装置对应于显影剂的相应部分并提供其加热。 处理器选择性地控制加热装置，以调节晶片各部分的温度。
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9.发明授权Reducing resist residue defects in open area on patterned wafer using trim mask 有权使用修剪掩模减少图案化晶片上的开放区域中的抗蚀剂残留缺陷公开(公告)号：US06613500B1
公开(公告)日：2003-09-02
申请号：US09824079
申请日：2001-04-02
IPC分类号： G03F700
CPC分类号： G03F7/70425 , G03F7/2022 , G03F7/203 , G03F7/70466
摘要： One aspect of the present invention relates to a method for reducing resist residue defects on a wafer structure. The method involves providing a semiconductor structure having a photoresist, the photoresist comprising open areas and circuit areas thereon; irradiating the open areas and circuit areas through a first photomask with a first energy dose to effect an image-wise pattern in the photoresist; irradiating the open areas of the photoresist through a second photomask with a second energy dose; and developing the photoresist.
摘要翻译： 本发明的一个方面涉及减少晶片结构上的抗蚀剂残留缺陷的方法。 该方法包括提供具有光致抗蚀剂的半导体结构，光致抗蚀剂包括开放区域和其上的电路区域; 通过具有第一能量剂量的第一光掩模照射开放区域和电路区域以在光致抗蚀剂中实现成像图案; 通过具有第二能量剂量的第二光掩模照射光致抗蚀剂的开放区域; 并显影光致抗蚀剂。
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公开(公告)号：US06556303B1
公开(公告)日：2003-04-29
申请号：US09902366
申请日：2001-07-10
IPC分类号： G01B1114
CPC分类号： G01B11/0683 , G01B11/0625 , H01L22/12
摘要： The present invention is directed to a system and a method for controlling a thin film formation on a moving substrate as part of a process for manufacturing an integrated circuit. The invention involves the use of scatterometry to control the thin film formation process by analyzing the thin film on the moving substrate in a periodic manner. A registration feature associated with the moving substrate can be utilized in conjunction with a signaling system to determine a position of the moving substrate, whereby a repeatable analysis of a corresponding location on the moving substrate can be performed. Scatterometry permits in-situ measurements of thin film formation progress, whereby thin film formation process conditions can be controlled in a feedback loop to obtain a targeted result. Scatterometry can also be facilitated by providing a grating pattern on a non-production portion of the substrate.
摘要翻译： 本发明涉及一种用于控制移动衬底上的薄膜形成的系统和方法，作为用于制造集成电路的工艺的一部分。 本发明涉及使用散射法来以周期性方式分析移动基片上的薄膜来控制薄膜形成过程。 与移动基板相关联的配准特征可以与信号系统结合使用，以确定移动基板的位置，由此可以执行移动基板上对应位置的可重复分析。 散射测量允许原位测量薄膜形成进程，由此可以在反馈回路中控制薄膜形成工艺条件以获得目标结果。 也可以通过在基板的非生产部分上提供光栅图案来促进散射测量。
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