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公开(公告)号：US11605618B2
公开(公告)日：2023-03-14
申请号：US17204687
申请日：2021-03-17
申请人： Michael Krames , Bardia Pezeshki , Robert Kalman , Cameron Danesh
发明人： Michael Krames , Bardia Pezeshki , Robert Kalman , Cameron Danesh
IPC分类号： H01L25/075 , H01L33/06 , H01L33/62 , H01L33/58 , H01L33/10 , H01L33/32 , H01L33/22 , H01L33/60
摘要： An LED array on a sapphire substrate may be mounted on a silicon interconnect chip, with LEDs of the array inserted into holes of waveguides on the silicon interconnect chip. The sapphire substrate and the silicon interconnect chip may both have microbumps for carrying electrical signals to or from the LEDs, and the sapphire substrate and silicon interconnect chip may be bonded together using the microbumps. The LEDs may be configured to preferentially emit light in a lateral direction, for increased coupling of light into the waveguides.
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公开(公告)号：US20210296292A1
公开(公告)日：2021-09-23
申请号：US17204687
申请日：2021-03-17
申请人： Michael Krames , Bardia Pezeshki , Robert Kalman , Cameron Danesh
发明人： Michael Krames , Bardia Pezeshki , Robert Kalman , Cameron Danesh
摘要： An LED array on a sapphire substrate may be mounted on a silicon interconnect chip, with LEDs of the array inserted into holes of waveguides on the silicon interconnect chip. The sapphire substrate and the silicon interconnect chip may both have microbumps for carrying electrical signals to or from the LEDs, and the sapphire substrate and silicon interconnect chip may be bonded together using the microbumps. The LEDs may be configured to preferentially emit light in a lateral direction, for increased coupling of light into the waveguides.
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公开(公告)号：US20220286211A1
公开(公告)日：2022-09-08
申请号：US17653723
申请日：2022-03-07
摘要： Multi-chip modules in different semiconductor packages may be optically data coupled by way of LEDs and photodetectors linked by a multicore fiber. The multicore fiber may pass through apertures in the semiconductor packages, with an array of LEDs and photodetectors in the semiconductor package providing and receiving, respectively, optical signals comprised of data passed between the multi-chip modules.
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公开(公告)号：US20220107456A1
公开(公告)日：2022-04-07
申请号：US17492248
申请日：2021-10-01
摘要： A multi-layer planar waveguide may be used in providing an interconnect for inter-chip and/or intra-chip signal transmission. Various embodiments to transmit optical signals are disclosed, along with designs of microLED optical assemblies, photodetector optical assemblies, waveguides, and multi-layer planar waveguides.
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公开(公告)号：US20210320721A1
公开(公告)日：2021-10-14
申请号：US17229510
申请日：2021-04-13
摘要： Coupling of light from large angular distribution microLEDs into smaller angular acceptance distribution of transmission channels is performed using optical elements.
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公开(公告)号：US20220113483A1
公开(公告)日：2022-04-14
申请号：US17497742
申请日：2021-10-08
IPC分类号： G02B6/42
摘要： Optical interconnects for IC chips may include optical sources and receivers integrated with the IC chips. MicroLEDs may be mounted on an interconnect layer of the IC chip, and embedded within a waveguide. Photodetectors to receive light from the waveguide may be fabricated in a top surface of a semiconductor substrate, below a level of the interconnect layer, but with a passageway for light through the interconnect layer.
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公开(公告)号：US20220005845A1
公开(公告)日：2022-01-06
申请号：US17367177
申请日：2021-07-02
申请人： Bardia Pezeshki , Robert Kalman , Cameron Danesh
发明人： Bardia Pezeshki , Robert Kalman , Cameron Danesh
IPC分类号： H01L27/144 , H01L31/02 , H01L31/0224 , H01L31/0232 , H01L31/105 , H01L31/18 , G02B6/42
摘要： A lateral p-i-n photodetector may be made using CMOS compatible processes. CMOS circuitry may be included on a die including the lateral p-i-n photodetector. The lateral p-i-n photodetector may be formed in a device layer of the die, with a buried oxide under the device layer. P-type implants may bound a region defined by the lateral p-i-n photodetector.
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公开(公告)号：US11677472B2
公开(公告)日：2023-06-13
申请号：US17461586
申请日：2021-08-30
CPC分类号： H04B10/40 , G02B6/4246 , H04B10/25 , H05K1/111 , H05K1/115 , H05K2201/10121
摘要： For optical communications between semiconductor ICs, optical transceiver assembly subsystems may be integrated with a processor. The optical transceiver assembly subsystems may be monolithically integrated with processor ICs or they may be provided in separate optical transceiver ICs coupled to or attached to the processor ICs.
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公开(公告)号：US11619781B2
公开(公告)日：2023-04-04
申请号：US17323625
申请日：2021-05-18
摘要： A microLED may be used to generate light for intra-chip or inter-chip communications. The microLED, or an active layer of the microLED, may be embedded in a waveguide. The waveguide may include a lens.
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公开(公告)号：US20230054560A1
公开(公告)日：2023-02-23
申请号：US17820483
申请日：2022-08-17
IPC分类号： G02B6/42
摘要： Parallel optical interconnects may be used to transmit signals produced by integrated circuits. A parallel optical interconnect may be in the form of a multicore optical fiber and one or more optical coupling assemblies optically connecting a first optical transceiver array and a second optical transceiver array. The multicore optical fiber may have multiple fiber elements with each having a core surrounded by cladding, and the one or more optical coupling assemblies may have refractive and/or reflective elements. In this way, light produced by one transceiver array may be transmitted through the multicore optical fiber and be received by the other transceiver array.
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