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公开(公告)号：US09803292B2
公开(公告)日：2017-10-31
申请号：US13592564
申请日：2012-08-23
CPC分类号： C30B25/04 , B82Y30/00 , B82Y40/00 , C01B32/186 , C01B2204/02 , C01B2204/04 , C30B29/02 , H01L21/02425 , H01L21/02527 , H01L21/0262 , H01L21/02642 , H01L21/02664 , H01L29/1606
摘要： Methods for growing microstructured and nanostructured graphene by growing the microstructured and nanostructured graphene from the bottom-up directly in the desired pattern are provided. The graphene structures can be grown via chemical vapor deposition (CVD) on substrates that are partially covered by a patterned graphene growth barrier which guides the growth of the graphene.
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2.发明授权Methods of fabricating large-area, semiconducting nanoperforated graphene materials 有权制造大面积半导体纳米石墨烯材料的方法公开(公告)号：US09114998B2
公开(公告)日：2015-08-25
申请号：US13592466
申请日：2012-08-23
IPC分类号： H01L21/306 , C23F1/00 , C01B31/04 , B82Y30/00 , B82Y40/00
CPC分类号： C01B31/0438 , B82Y30/00 , B82Y40/00 , C01B32/182 , C01B32/194
摘要： Methods for forming a nanoperforated graphene material are provided. The methods comprise forming an etch mask defining a periodic array of holes over a graphene material and patterning the periodic array of holes into the graphene material. The etch mask comprises a pattern-defining block copolymer layer, and can optionally also comprise a wetting layer and a neutral layer. The nanoperforated graphene material can consist of a single sheet of graphene or a plurality of graphene sheets.
摘要翻译： 提供了形成纳米石墨烯材料的方法。 所述方法包括在石墨烯材料上形成限定孔周期性阵列的蚀刻掩模，并且将周期性阵列的孔图案化成石墨烯材料。 蚀刻掩模包括图案界定的嵌段共聚物层，并且还可任选地包含润湿层和中性层。 纳米孔石墨烯材料可以由单片石墨烯或多个石墨烯片组成。
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3.发明授权Methods of fabricating large-area, semiconducting nanoperforated graphene materials 有权制造大面积半导体纳米石墨烯材料的方法公开(公告)号：US08268180B2
公开(公告)日：2012-09-18
申请号：US13013531
申请日：2011-01-25
IPC分类号： B31D3/00
CPC分类号： C01B31/0438 , B82Y30/00 , B82Y40/00 , C01B32/182 , C01B32/194
摘要： Methods for forming a nanoperforated graphene material are provided. The methods comprise forming an etch mask defining a periodic array of holes over a graphene material and patterning the periodic array of holes into the graphene material. The etch mask comprises a pattern-defining block copolymer layer, and can optionally also comprise a wetting layer and a neutral layer. The nanoperforated graphene material can consist of a single sheet of graphene or a plurality of graphene sheets.
摘要翻译： 提供了形成纳米石墨烯材料的方法。 所述方法包括在石墨烯材料上形成限定孔周期性阵列的蚀刻掩模，并且将周期性阵列的孔图案化成石墨烯材料。 蚀刻掩模包括图案界定的嵌段共聚物层，并且还可任选地包含润湿层和中性层。 纳米孔石墨烯材料可以由单片石墨烯或多个石墨烯片组成。
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4.发明申请BARRIER GUIDED GROWTH OF MICROSTRUCTURED AND NANOSTRUCTURED GRAPHENE AND GRAPHITE 有权BARRIER指导微结构和纳米结构的石墨和石墨的生长公开(公告)号：US20130160701A1
公开(公告)日：2013-06-27
申请号：US13592564
申请日：2012-08-23
CPC分类号： C30B25/04 , B82Y30/00 , B82Y40/00 , C01B32/186 , C01B2204/02 , C01B2204/04 , C30B29/02 , H01L21/02425 , H01L21/02527 , H01L21/0262 , H01L21/02642 , H01L21/02664 , H01L29/1606
摘要： Methods for growing microstructured and nanostructured graphene by growing the microstructured and nanostructured graphene from the bottom-up directly in the desired pattern are provided. The graphene structures can be grown via chemical vapor deposition (CVD) on substrates that are partially covered by a patterned graphene growth barrier which guides the growth of the graphene.
摘要翻译： 提供了通过以直接以所需图案从下到上生长微结构和纳米结构的石墨烯来生长微结构和纳米结构的石墨烯的方法。 石墨烯结构可以通过化学气相沉积（CVD）在衬底上生长，所述衬底被图案化石墨烯生长屏障部分地覆盖，其引导石墨烯的生长。
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公开(公告)号：US20130108839A1
公开(公告)日：2013-05-02
申请号：US13282666
申请日：2011-10-27
CPC分类号： C01B32/182 , B82Y30/00 , B82Y40/00 , C01B32/186 , C01B32/194 , C01B2204/32 , Y10S977/734 , Y10S977/843 , Y10S977/932 , Y10T428/24802
摘要： Methods of producing layers of patterned graphene with smooth edges are provided. The methods comprise the steps of fabricating a layer of crystalline graphene on a surface, wherein the layer of crystalline graphene has a crystallographically disordered edge, and decreasing the crystallographic disorder of the edge of the layer of crystalline graphene by heating the layer of crystalline graphene on the surface at an elevated temperature in a catalytic environment comprising carbon-containing molecules.
摘要翻译： 提供了产生具有平滑边缘的图案化石墨烯层的方法。 这些方法包括在表面上制造晶体石墨烯层的步骤，其中晶体石墨烯层具有晶体学上无序的边缘，并且通过将晶体石墨烯层加热来降低晶体石墨烯层的边缘的晶体学障碍 该表面在包括含碳分子的催化环境中处于升高的温度。
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公开(公告)号：US09394177B2
公开(公告)日：2016-07-19
申请号：US13282666
申请日：2011-10-27
CPC分类号： C01B32/182 , B82Y30/00 , B82Y40/00 , C01B32/186 , C01B32/194 , C01B2204/32 , Y10S977/734 , Y10S977/843 , Y10S977/932 , Y10T428/24802
摘要： Methods of producing layers of patterned graphene with smooth edges are provided. The methods comprise the steps of fabricating a layer of crystalline graphene on a surface, wherein the layer of crystalline graphene has a crystallographically disordered edge, and decreasing the crystallographic disorder of the edge of the layer of crystalline graphene by heating the layer of crystalline graphene on the surface at an elevated temperature in a catalytic environment comprising carbon-containing molecules.
摘要翻译： 提供了产生具有平滑边缘的图案化石墨烯层的方法。 这些方法包括在表面上制造晶体石墨烯层的步骤，其中晶体石墨烯层具有晶体学上无序的边缘，并且通过将晶体石墨烯层加热来降低晶体石墨烯层的边缘的晶体学障碍 该表面在包括含碳分子的催化环境中处于升高的温度。
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7.发明申请METHODS OF FABRICATING LARGE-AREA, SEMICONDUCTING NANOPERFORATED GRAPHENE MATERIALS 有权制备大面积方法，半导体纳米石墨材料公开(公告)号：US20120325405A1
公开(公告)日：2012-12-27
申请号：US13592466
申请日：2012-08-23
IPC分类号： C23F1/02
CPC分类号： C01B31/0438 , B82Y30/00 , B82Y40/00 , C01B32/182 , C01B32/194
摘要： Methods for forming a nanoperforated graphene material are provided. The methods comprise forming an etch mask defining a periodic array of holes over a graphene material and patterning the periodic array of holes into the graphene material. The etch mask comprises a pattern-defining block copolymer layer, and can optionally also comprise a wetting layer and a neutral layer. The nanoperforated graphene material can consist of a single sheet of graphene or a plurality of graphene sheets.
摘要翻译： 提供了形成纳米石墨烯材料的方法。 所述方法包括在石墨烯材料上形成限定孔周期性阵列的蚀刻掩模，并且将周期性阵列的孔图案化成石墨烯材料。 蚀刻掩模包括图案界定的嵌段共聚物层，并且还可任选地包含润湿层和中性层。 纳米孔石墨烯材料可以由单片石墨烯或多个石墨烯片组成。
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8.发明申请METHODS OF FABRICATING LARGE-AREA, SEMICONDUCTING NANOPERFORATED GRAPHENE MATERIALS 有权制备大面积方法，半导体纳米石墨材料公开(公告)号：US20110201201A1
公开(公告)日：2011-08-18
申请号：US13013531
申请日：2011-01-25
IPC分类号： H01L21/311 , B82Y40/00
CPC分类号： C01B31/0438 , B82Y30/00 , B82Y40/00 , C01B32/182 , C01B32/194
摘要： Methods for forming a nanoperforated graphene material are provided. The methods comprise forming an etch mask defining a periodic array of holes over a graphene material and patterning the periodic array of holes into the graphene material. The etch mask comprises a pattern-defining block copolymer layer, and can optionally also comprise a wetting layer and a neutral layer. The nanoperforated graphene material can consist of a single sheet of graphene or a plurality of graphene sheets.
摘要翻译： 提供了形成纳米石墨烯材料的方法。 所述方法包括在石墨烯材料上形成限定孔周期性阵列的蚀刻掩模，并且将周期性阵列的孔图案化成石墨烯材料。 蚀刻掩模包括图案界定的嵌段共聚物层，并且还可任选地包含润湿层和中性层。 纳米孔石墨烯材料可以由单片石墨烯或多个石墨烯片组成。
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