公开(公告)号：US6100170A

公开(公告)日：2000-08-08

申请号：US110942

申请日：1998-07-07

申请人： Michikazu Matsumoto ,  Tatsuo Sugiyama ,  Shinichi Ogawa ,  Masato Kanazawa ,  Kouji Tamura ,  Masahiro Yasumi

发明人： Michikazu Matsumoto ,  Tatsuo Sugiyama ,  Shinichi Ogawa ,  Masato Kanazawa ,  Kouji Tamura ,  Masahiro Yasumi

IPC分类号： H01L21/28 ,  H01L21/285 ,  H01L21/336 ,  H01L21/425 ,  H01L21/3205

CPC分类号： H01L29/665 ,  H01L21/28052 ,  H01L21/28512 ,  H01L21/28518

摘要： After forming a polysilicon film to be used as a gate electrode on a semiconductor substrate of silicon, an insulating thin film is deposited on the polysilicon film. Impurity ions are implanted into the polysilicon film through the insulating thin film, so as to form an amorphous layer on the surface of the polysilicon film. After removing the insulating thin film existing on the polysilicon film, a metal film is deposited on the amorphous layer. A reaction is caused between the amorphous layer and the metal film through annealing, so as to form a metal silicide layer on the surface of the polysilicon film.

摘要翻译： 在硅的半导体衬底上形成用作栅电极的多晶硅膜之后，在多晶硅膜上沉积绝缘薄膜。 通过绝缘薄膜将杂质离子注入到多晶硅膜中，以在多晶硅膜的表面上形成非晶层。 在去除存在于多晶硅膜上的绝缘薄膜之后，在非晶层上沉积金属膜。 通过退火在非晶层与金属膜之间产生反应，从而在多晶硅膜的表面上形成金属硅化物层。

公开(公告)号：US06376373B1

公开(公告)日：2002-04-23

申请号：US09523985

申请日：2000-03-13

申请人： Kikuko Nakamura ,  Tatsuo Sugiyama ,  Shinichi Ogawa

发明人： Kikuko Nakamura ,  Tatsuo Sugiyama ,  Shinichi Ogawa

IPC分类号： H01L2144

CPC分类号： H01L21/28518

摘要： While conventionally, a Co film is deposited by directional sputtering directly on a source/drain diffusion layer formed on the surface of an Si substrate while the substrate is being heated, a thin oxide film is formed on the source/drain diffusion layer and then, the Co film is deposited by directional sputtering while the substrate is being heated. By doing this, an inner Co—Si layer the composition of which is thermally unstable is formed and a Co—Si—O layer is formed on the Co—Si layer. After the remaining unreacted Co film and the Co—Si—O layer are selectively removed, a high-temperature heat treatment is performed, so that the inner Co—Si layer is transformed into a CoSi2 layer to increase the film thickness. The formation of the oxide film curbs the speed of reaction between Co and Si, so that a Co—Si layer of the same thickness as that in the wide region can be formed in the fine region. As a result, a CoSi2 layer with uniform thickness and sheet resistance can be formed.

摘要翻译： 通常，在衬底被加热的同时，通过定向溅射将Co膜直接沉积在形成于Si衬底的表面上的源极/漏极扩散层上，在源极/漏极扩散层上形成薄的氧化物膜， 当衬底被加热时，通过定向溅射沉积Co膜。 通过这样做，形成其组成为热不稳定性的内部Co-Si层，并且在Co-Si层上形成Co-Si-O层。 在剩余的未反应的Co膜和Co-Si-O层被选择性地除去之后，进行高温热处理，使得内部Co-Si层转变为CoSi 2层以增加膜厚度。 氧化膜的形成限制了Co和Si之间的反应速度，从而可以在微细区域中形成与宽区域相同厚度的Co-Si层。 结果，可以形成具有均匀厚度和薄层电阻的CoSi 2层。

公开(公告)号：US6150248A

公开(公告)日：2000-11-21

申请号：US102383

申请日：1998-06-22

申请人： Mitsuru Sekiguchi ,  Shinichi Ogawa ,  Kikuko Tsutsumi ,  Tatsuo Sugiyama

发明人： Mitsuru Sekiguchi ,  Shinichi Ogawa ,  Kikuko Tsutsumi ,  Tatsuo Sugiyama

IPC分类号： H01L21/285 ,  H01L21/3205 ,  H01L21/44

CPC分类号： H01L21/28518

摘要： A method for fabricating a semiconductor device including a silicon region and a cobalt silicide film, the cobalt silicide film being in contact with at least a part of the silicon region. The method includes the steps of: doping at least part of the silicon region with boron by setting a doping level of boron in the part at 1.times.10.sup.15 cm.sup.-3 or more; depositing a cobalt film over a surface of the silicon region; conducting a first heat treatment for producing a silicidation reaction in a contact region between the cobalt film and the silicon region and thereby forming the cobalt silicide film; selectively removing unreacted portions of the cobalt film that have not been turned into silicide; and conducting a second heat treatment at a temperature higher than a temperature set for the first heat treatment step, thereby inducing a phase transition in the cobalt silicide film. The first heat treatment step is performed within a reducing ambient gas, and the temperature set for the first heat treatment step is in the range from about 400.degree. C. to about 600.degree. C., both inclusive.

摘要翻译： 一种制造包括硅区和硅化钴膜的半导体器件的方法，所述钴硅化物膜与所述硅区的至少一部分接触。 该方法包括以下步骤：通过在1×10 15 cm -3以上设定该部分中的硼的掺杂水平，用硼掺杂至少一部分硅区域; 在所述硅区域的表面上沉积钴膜; 进行第一热处理，以在钴膜和硅区域之间的接触区域中产生硅化反应，从而形成硅化钴膜; 选择性地除去尚未变成硅化物的钴膜的未反应部分; 并在比第一热处理步骤设定的温度高的温度下进行第二次热处理，从而引起硅化钴膜的相变。 第一热处理步骤在还原环境气体中进行，并且第一热处理步骤设定的温度在约400℃至约600℃的范围内。

公开(公告)号：US07037733B2

公开(公告)日：2006-05-02

申请号：US10343762

申请日：2002-07-01

申请人： Satoshi Shibata ,  Junji Hirase ,  Tatsuo Sugiyama ,  Emi Kanasaki ,  Fumitoshi Kawase ,  Yasushi Naito

发明人： Satoshi Shibata ,  Junji Hirase ,  Tatsuo Sugiyama ,  Emi Kanasaki ,  Fumitoshi Kawase ,  Yasushi Naito

IPC分类号： H01L21/66 ,  G01N25/00 ,  G01J5/00

CPC分类号： G01J5/0003

摘要： When the emissivity ε on the reverse face of a substrate 10 is measured during annealing processing for the substrate 10, films made from a material that varies the emissivity ε, such as a first DPS film 15 used for forming a plug 15A, a second DPS film 17 used for forming a capacitor lower electrode 17A and a third DPS film 20 used for forming a capacitor upper electrode 20A, are formed on the top face of the substrate 10. On the other hand, no film made from a material that varies the emissivity ε, such as a DPS film, is formed on the reverse face of the substrate 10.

摘要翻译： 当在衬底10的退火处理期间测量衬底10的反面上的发射率ε时，由用于形成插头15A的第一DPS膜15，例如用于形成插头15A的第一DPS膜15的材料制成的膜，第二 用于形成用于形成电容器上电极20A的电容器下电极17A和第三DPS膜20的DPS膜17形成在基板10的顶面上。另一方面，没有由材料制成的膜 在基板10的背面上形成改变发射率ε（例如DPS膜）。

公开(公告)号：US5696008A

公开(公告)日：1997-12-09

申请号：US668180

申请日：1996-06-21

申请人： Tokuhiko Tamaki ,  Tatsuo Sugiyama ,  Hiroaki Nakaoka

发明人： Tokuhiko Tamaki ,  Tatsuo Sugiyama ,  Hiroaki Nakaoka

IPC分类号： H01L21/8238 ,  H01L27/092 ,  H01L21/265 ,  H01L21/70

CPC分类号： H01L21/82385 ,  H01L21/823885 ,  H01L27/0922

摘要： On a semiconductor substrate made of p-type silicon, there are formed, in a successively layered fashion, a first p-type silicon semiconductor layer, laterally paired first n-type silicon semiconductor layers, laterally paired second p-type silicon semiconductor layers, and laterally paired n-type silicon semiconductor layers, by an epitaxial growth method. On the second n-type silicon semiconductor layer on the right side, there are successively formed a third p-type silicon semiconductor layer, a third n-type silicon semiconductor layer and a fourth p-type silicon semiconductor layer. The left first n-type silicon semiconductor layer, left second p-type silicon semiconductor layer and left second n-type silicon semiconductor layer form a first insular multilayered portion forming an n-channel MOSFET. The third p-type silicon semiconductor layer, third n-type silicon semiconductor layer and fourth p-type silicon semiconductor layer form a second insular portion forming a p-channel MOSFET. A first gate electrode is formed on a side surface of the left second p-type silicon semiconductor layer with a gate insulating film therebetween, and a second gate electrode is formed on a side surface of the right third n-type silicon semiconductor layer with a gate insulating film therebetween.

摘要翻译： 在由p型硅制成的半导体衬底上，以连续分层的方式形成第一p型硅半导体层，横向配对的第一n型硅半导体层，横向配对的第二p型硅半导体层， 和横向配对的n型硅半导体层，通过外延生长法。 在右侧的第二n型硅半导体层上，依次形成第三p型硅半导体层，第三n型硅半导体层和第四p型硅半导体层。 左第一n型硅半导体层，左第二p型硅半导体层和左第二n型硅半导体层形成形成n沟道MOSFET的第一岛状多层部分。 第三p型硅半导体层，第三n型硅半导体层和第四p型硅半导体层形成形成p沟道MOSFET的第二岛形部分。 第一栅电极形成在左第二p型硅半导体层的侧表面上，栅极绝缘膜之间，第二栅电极形成在右第三n型硅半导体层的侧表面上， 栅绝缘膜。

公开(公告)号：US06893760B2

公开(公告)日：2005-05-17

申请号：US10046918

申请日：2002-01-17

申请人： Itaru Shibata ,  Tatsuo Sugiyama ,  Masaharu Hatano ,  Mitsugu Yamanaka ,  Makoto Uchiyama ,  Tatsuhiro Fukuzawa ,  Naoki Hara ,  Keiko Kushibiki ,  Fuminori Satou

发明人： Itaru Shibata ,  Tatsuo Sugiyama ,  Masaharu Hatano ,  Mitsugu Yamanaka ,  Makoto Uchiyama ,  Tatsuhiro Fukuzawa ,  Naoki Hara ,  Keiko Kushibiki ,  Fuminori Satou

IPC分类号： H01M4/86 ,  H01M4/88 ,  H01M8/02 ,  H01M8/12 ,  H01M8/24

CPC分类号： H01M4/8657 ,  H01M4/8642 ,  H01M8/1213 ,  H01M8/2425 ,  H01M8/2432 ,  H01M8/249 ,  H01M2008/1293 ,  Y02P70/56

摘要： A single cell for a fuel cell in which an air electrode or a fuel electrode includes at least two layers. The air electrode includes an adhering cathode layer formed on one surface of the solid electrolyte layer and configured to show a function to allow the air electrode and the solid electrolyte layer to adhere electrically and mechanically to each other, and an electricity collecting cathode layer formed on the adhering cathode layer and configured to show an electricity collecting function of the air electrode. Alternatively, the fuel electrode includes an adhering anode layer formed on the other surface of the solid electrolyte layer and configured to show a function to allow the fuel electrode and the solid electrolyte layer to adhere electrically and mechanically to each other, and an electricity collecting anode layer formed on the adhering anode layer and configured to show an electricity collecting function.

公开(公告)号：US5144499A

公开(公告)日：1992-09-01

申请号：US733802

申请日：1991-07-22

申请人： Seiichi Kawanami ,  Tatsuo Sugiyama ,  Yoshiro Suzuki ,  Yasutaro Ito ,  Yuji Annaka

发明人： Seiichi Kawanami ,  Tatsuo Sugiyama ,  Yoshiro Suzuki ,  Yasutaro Ito ,  Yuji Annaka

IPC分类号： G02B5/20 ,  G02B1/04 ,  G02B5/22 ,  G02B13/16 ,  H04N9/31

CPC分类号： H04N9/31 ,  G02B13/16 ,  G02B5/223

摘要： Provided are optical shaped articles for CRT, such as projection lens and filter used for the CRT's of projection TV's, which comprise a transparent synthetic resin containing a red dyestuff or a combination of a green organic pigment and a yellow dyestuff and having specified spectral transmittance characteristics.

公开(公告)号：US07326484B2

公开(公告)日：2008-02-05

申请号：US11088892

申请日：2005-03-25

申请人： Itaru Shibata ,  Tatsuo Sugiyama ,  Masaharu Hatano ,  Mitsugu Yamanaka ,  Makoto Uchiyama ,  Tatsuhiro Fukuzawa ,  Naoki Hara ,  Keiko Kushibiki ,  Fuminori Satou

发明人： Itaru Shibata ,  Tatsuo Sugiyama ,  Masaharu Hatano ,  Mitsugu Yamanaka ,  Makoto Uchiyama ,  Tatsuhiro Fukuzawa ,  Naoki Hara ,  Keiko Kushibiki ,  Fuminori Satou

IPC分类号： H01M8/10 ,  H01M8/24 ,  H01M4/86

CPC分类号： H01M4/8657 ,  H01M4/8642 ,  H01M8/1213 ,  H01M8/2425 ,  H01M8/2432 ,  H01M8/249 ,  H01M2008/1293 ,  Y02P70/56

摘要： A single cell for a fuel cell in which an air electrode or a fuel electrode includes at least two layers. The air electrode includes an adhering cathode layer formed on one surface of the solid electrolyte layer and configured to show a function to allow the air electrode and the solid electrolyte layer to adhere electrically and mechanically to each other, and an electricity collecting cathode layer formed on the adhering cathode layer and configured to show an electricity collecting function of the air electrode. Alternatively, the fuel electrode includes an adhering anode layer formed on the other surface of the solid electrolyte layer and configured to show a function to allow the fuel electrode and the solid electrolyte layer to adhere electrically and mechanically to each other, and an electricity collecting anode layer formed on the adhering anode layer and configured to show an electricity collecting function.

摘要翻译： 用于燃料电池的单电池，其中空气电极或燃料电极包括至少两层。 空气电极包括形成在固体电解质层的一个表面上的粘附阴极层，并且被配置为显示使空气电极和固体电解质层彼此电和机械地粘附的功能，以及形成在 粘附阴极层并且被配置为显示空气电极的集电功能。 或者，燃料电极包括形成在固体电解质层的另一个表面上的粘附阳极层，并且被配置为具有允许燃料电极和固体电解质层彼此电和机械粘合的功能，并且集电阳极 层，其形成在粘附阳极层上并且被配置为显示集电功能。

公开(公告)号：US06803140B2

公开(公告)日：2004-10-12

申请号：US09939577

申请日：2001-08-28

申请人： Tatsuo Sugiyama ,  Kazuo Matsuo ,  Fumio Munakata ,  Yoshio Akimune

发明人： Tatsuo Sugiyama ,  Kazuo Matsuo ,  Fumio Munakata ,  Yoshio Akimune

IPC分类号： H01M810

CPC分类号： C04B35/01 ,  C01G15/00 ,  C01G15/006 ,  C04B35/50 ,  C04B35/505 ,  H01M8/1246 ,  Y02E60/525 ,  Y02P70/56

摘要： A solid electrolyte material contains an A site-deficient complex oxide represented by a chemical formula A1-&agr;BO3-&dgr;, in which a B site contains at least Ga. This solid electrolyte material has stability, high oxide-ion conductivity at low temperature and high toughness. A method of manufacturing the solid electrolyte material, comprises: mixing oxide materials of respective constituent elements; baking temporarily the mixed materials at 1100 to 1200° C. for 2 to 10 hours; grinding the temporarily baked materials to powder; molding the powder; and sintering the molded powder. A solid oxide fuel cell, has: the solid electrolyte material; a cathode electrode formed on one surface of the solid electrolyte material; and an anode electrode formed on the other surface of the solid electrolyte material. The solid oxide fuel cell has a stable and long operation at low temperature.

摘要翻译： 固体电解质材料包含由B位含有至少Ga的化学式A1-αBO3-δ表示的A位缺陷型复合氧化物，该固体电解质材料在低温高温下具有稳定的高氧离子传导性 韧性。 一种制造固体电解质材料的方法，包括：混合各组成元素的氧化物材料; 将混合物料在1100〜1200℃下暂时烘烤2〜10小时; 将暂时烘烤的材料研磨成粉末; 成型粉末; 并烧结成型粉末。 一种固体氧化物燃料电池，具有：固体电解质材料; 形成在固体电解质材料的一个表面上的阴极电极; 以及形成在固体电解质材料的另一个表面上的阳极电极。 固体氧化物燃料电池在低温下具有稳定且长时间的操作。

公开(公告)号：US5950101A

公开(公告)日：1999-09-07

申请号：US888919

申请日：1997-07-07

申请人： Kousaka Yano ,  Tatsuo Sugiyama ,  Satoshi Ueda ,  Noboru Nomura

发明人： Kousaka Yano ,  Tatsuo Sugiyama ,  Satoshi Ueda ,  Noboru Nomura

IPC分类号： H01L21/205 ,  H01L21/316 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L21/469

CPC分类号： H01L23/5329 ,  H01L21/76801 ,  H01L21/76826 ,  H01L21/76832 ,  H01L21/76834 ,  H01L2924/0002

摘要： A first metallization layer is locally formed on the surface of a semiconductor substrate thereby leaving portions of the semiconductor substrate's surface exposed. A first silicon oxide layer is then formed in such a manner that it covers the exposed portions of the semiconductor substrate's surface and the first metallization layer. This is followed by the formation of an HMDS molecular layer on the first silicon oxide layer. Then, a second silicon oxide is formed on the molecular layer by means of a CVD process utilizing the chemical reaction of ozone with TEOS. Finally, a second metallization layer is locally formed on the second silicon oxide layer.

摘要翻译： 第一金属化层局部地形成在半导体衬底的表面上，从而使半导体衬底表面的部分露出。 然后以这样的方式形成第一氧化硅层，使得其覆盖半导体衬底的表面和第一金属化层的暴露部分。 随后在第一氧化硅层上形成HMDS分子层。 然后，通过使用臭氧与TEOS的化学反应的CVD工艺在分子层上形成第二氧化硅。 最后，第二金属化层局部形成在第二氧化硅层上。