公开(公告)号：US5950101A

公开(公告)日：1999-09-07

申请号：US888919

申请日：1997-07-07

申请人： Kousaka Yano ,  Tatsuo Sugiyama ,  Satoshi Ueda ,  Noboru Nomura

发明人： Kousaka Yano ,  Tatsuo Sugiyama ,  Satoshi Ueda ,  Noboru Nomura

IPC分类号： H01L21/205 ,  H01L21/316 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L21/469

CPC分类号： H01L23/5329 ,  H01L21/76801 ,  H01L21/76826 ,  H01L21/76832 ,  H01L21/76834 ,  H01L2924/0002

摘要： A first metallization layer is locally formed on the surface of a semiconductor substrate thereby leaving portions of the semiconductor substrate's surface exposed. A first silicon oxide layer is then formed in such a manner that it covers the exposed portions of the semiconductor substrate's surface and the first metallization layer. This is followed by the formation of an HMDS molecular layer on the first silicon oxide layer. Then, a second silicon oxide is formed on the molecular layer by means of a CVD process utilizing the chemical reaction of ozone with TEOS. Finally, a second metallization layer is locally formed on the second silicon oxide layer.

摘要翻译： 第一金属化层局部地形成在半导体衬底的表面上，从而使半导体衬底表面的部分露出。 然后以这样的方式形成第一氧化硅层，使得其覆盖半导体衬底的表面和第一金属化层的暴露部分。 随后在第一氧化硅层上形成HMDS分子层。 然后，通过使用臭氧与TEOS的化学反应的CVD工艺在分子层上形成第二氧化硅。 最后，第二金属化层局部形成在第二氧化硅层上。

公开(公告)号：US5723909A

公开(公告)日：1998-03-03

申请号：US712237

申请日：1996-09-11

申请人： Kousaku Yano ,  Tatsuo Sugiyama ,  Satoshi Ueda ,  Noboru Nomura

发明人： Kousaku Yano ,  Tatsuo Sugiyama ,  Satoshi Ueda ,  Noboru Nomura

IPC分类号： H01L21/205 ,  H01L21/316 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L23/58

CPC分类号： H01L23/5329 ,  H01L21/76801 ,  H01L21/76826 ,  H01L21/76832 ,  H01L21/76834 ,  H01L2924/0002

摘要： A first metallization layer is locally formed on the surface of a semiconductor substrate thereby leaving portions of the semiconductor substrate's surface exposed. A first silicon oxide layer is then formed in such a manner that it covers the exposed portions of the semiconductor substrate's surface and the first metallization layer. This is followed by the formation of an HMDS molecular layer on the first silicon oxide layer. Then, a second silicon oxide is formed on the molecular layer by means of a CVD process utilizing the chemical reaction of ozone with TEOS. Finally, a second metallization layer is locally formed on the second silicon oxide layer.

摘要翻译： 第一金属化层局部地形成在半导体衬底的表面上，从而使半导体衬底表面的部分露出。 然后以这样的方式形成第一氧化硅层，使得其覆盖半导体衬底的表面和第一金属化层的暴露部分。 随后在第一氧化硅层上形成HMDS分子层。 然后，通过使用臭氧与TEOS的化学反应的CVD工艺在分子层上形成第二氧化硅。 最后，第二金属化层局部形成在第二氧化硅层上。

公开(公告)号：US5753536A

公开(公告)日：1998-05-19

申请号：US520252

申请日：1995-08-28

申请人： Tatsuo Sugiyama ,  Shuji Hirao ,  Kousaku Yano ,  Noboru Nomura

发明人： Tatsuo Sugiyama ,  Shuji Hirao ,  Kousaku Yano ,  Noboru Nomura

IPC分类号： H01L21/98 ,  H01L25/065 ,  H01L21/60

CPC分类号： H01L23/544 ,  H01L21/76898 ,  H01L24/05 ,  H01L24/12 ,  H01L24/16 ,  H01L24/80 ,  H01L24/81 ,  H01L25/0657 ,  H01L25/50 ,  H01L2223/54426 ,  H01L2224/0401 ,  H01L2224/05571 ,  H01L2224/08145 ,  H01L2224/13099 ,  H01L2224/80141 ,  H01L2224/80357 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2224/81121 ,  H01L2224/81801 ,  H01L2224/81894 ,  H01L2224/83894 ,  H01L2224/9202 ,  H01L2225/06513 ,  H01L2225/06593 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/3511

摘要： A first electrode and a first insulating layer of electrode insulation are formed on a first semiconductor substrate. A second electrode and a second insulating layer of electrode insulation are formed on a second semiconductor substrate. The first semiconductor substrate has at its surface a pattern of recesses/projections (i.e., a pattern of sawteeth in cross section) at regular intervals in stripe arrangement. Likewise, the second semiconductor substrate has at its surface a pattern of recesses/projections (i.e., a pattern of sawteeth in cross section) at regular intervals in stripe arrangement, wherein the pattern of the second semiconductor substrate has a phase shift of 180 degrees with respect to the pattern of the first semiconductor substrate. The first and second semiconductor substrates are bonded together with their patterns in engagement.

摘要翻译： 在第一半导体衬底上形成有电极绝缘体的第一电极和第一绝缘层。 在第二半导体衬底上形成第二电极和电极绝缘的第二绝缘层。 第一半导体衬底在其表面上以条纹布置的规则间隔在其表面处具有凹槽/突起的图案（即横截面的锯齿形图案）。 类似地，第二半导体衬底在其表面上在条纹布置中以规则的间隔在其表面处具有凹槽/突起的图案（即，横截面的锯齿形图案），其中第二半导体衬底的图案具有180度的相移， 相对于第一半导体衬底的图案。 第一和第二半导体衬底以它们的图案接合在一起。

公开(公告)号：US5576247A

公开(公告)日：1996-11-19

申请号：US97231

申请日：1993-07-27

申请人： Kousaku Yano ,  Masayuki Endo ,  Yuka Terai ,  Noboru Nomura ,  Tomoyasu Murakami ,  Tetsuya Ueda ,  Satoshi Ueda

发明人： Kousaku Yano ,  Masayuki Endo ,  Yuka Terai ,  Noboru Nomura ,  Tomoyasu Murakami ,  Tetsuya Ueda ,  Satoshi Ueda

IPC分类号： H01L21/3105 ,  H01L21/316

CPC分类号： H01L21/3105 ,  Y10S438/974

摘要： A BPSG layer serving as a silicon oxide layer is formed on a semiconductor substrate 1. Formed on the surface of the BPSG layer is a hydrophobic molecular layer comprising hydrophobic groups such as methyl, ethyl and the like, by a silylation reaction (in which silyl having hydrophobic groups such as methyl groups, ethyl groups and the like, is reacted with OH groups, and in which the hydrophobic groups are substituted with H of the OH groups to generate --O--Si(CH.sub.3).sub.3 or the like). The molecular layer prevents the BPSG layer from absorbing moisture.

摘要翻译： 在半导体衬底1上形成用作氧化硅层的BPSG层。在BPSG层的表面上形成疏水性分子层，其通过甲硅烷基化反应（甲基， 具有疏水基团如甲基，乙基等与OH基团反应，并且其中疏水基团被H的OH基团取代以产生-O-Si（CH 3）3等）。 分子层防止BPSG层吸湿。

公开(公告)号：US07213664B2

公开(公告)日：2007-05-08

申请号：US11369748

申请日：2006-03-08

申请人： Noboru Nomura ,  Takashi Fukunaga ,  Jiro Suzuki

发明人： Noboru Nomura ,  Takashi Fukunaga ,  Jiro Suzuki

IPC分类号： B60K1/00

CPC分类号： B60L11/1892 ,  B60K1/04 ,  B60L1/003 ,  B60L1/02 ,  B60L3/0046 ,  B60L7/14 ,  B60L11/1803 ,  B60L11/1861 ,  B60L11/1875 ,  B60L11/1887 ,  B60L11/1894 ,  B60L2210/30 ,  B60L2210/40 ,  B60L2240/36 ,  B60L2240/545 ,  B60L2240/662 ,  B60L2270/44 ,  H01M8/04007 ,  H01M8/04052 ,  H01M8/04156 ,  H01M8/04164 ,  H01M8/0662 ,  H01M16/006 ,  H01M2250/20 ,  H01M2250/405 ,  Y02B90/16 ,  Y02T10/7044 ,  Y02T10/705 ,  Y02T10/7241 ,  Y02T10/7291 ,  Y02T90/16 ,  Y02T90/32 ,  Y02T90/34

摘要： There is provided a vehicle system, including an electromobile having a fuel cell power generator mounted therein, and a predetermined mobile unit jointable to the electromobile, such that cogeneration within the mobile unit can be realized even during the travel of the electromobile. Via a joint section 30, a vehicle 10 including a fuel cell 13 as a source of motive power is jointed to a mobile unit 20 capable of travelling and at least including a storage battery 23 and a water tank 25. The water produced in the fuel cell 13 is recovered by a water recovery section 21 via the joint section 30. The heat produced in the fuel cell 13 is recovered by a heat recovery section 22 via the joint section 30. The recovered water is warmed up with the recovered heat, and thereafter stored in the water tank 25. The hot water stored in the water tank 25 is utilized as hot water to be used for controlling the temperature of the mobile unit 20 or supplied as hot water. Any excess electric power generated by the fuel cell 13 is stored in the storage battery 23, and supplied onto electric wiring within the mobile unit 20.

摘要翻译： 提供了一种车辆系统，其包括具有安装在其中的燃料电池发电机的电动机和可与电动机连接的预定移动单元，使得即使在电动汽车行驶期间也可以实现移动单元内的热电联供。 通过接合部30，将包括作为动力源的燃料电池13的车辆10接合到能够行驶的移动单元20，并且至少包括蓄电池23和水箱25。 在燃料电池13中产生的水经由接合部30被水回收部21回收。 在燃料电池13中产生的热量经由接合部30被热回收部22回收。 回收的水用回收的热量加热，然后储存在水箱25中。 存储在水箱25中的热水被用作用于控制移动单元20的温度或作为热水供应的热水。 由燃料电池13产生的任何多余的电力被存储在蓄电池23中，并被供给到移动单元20内的电线路上。

公开(公告)号：US06362784B1

公开(公告)日：2002-03-26

申请号：US09424115

申请日：1999-11-19

申请人： Joji Kane ,  Takasi Yosida ,  Noboru Nomura ,  Toyokazu Ikeda ,  Tosiro Sugiyama ,  Hideto Majima

发明人： Joji Kane ,  Takasi Yosida ,  Noboru Nomura ,  Toyokazu Ikeda ,  Tosiro Sugiyama ,  Hideto Majima

IPC分类号： H01Q138

CPC分类号： H01Q1/38 ,  H01Q1/084 ,  H01Q1/32 ,  H01Q1/3275 ,  H01Q1/36 ,  H01Q5/371 ,  H01Q5/378 ,  H01Q5/40 ,  H01Q5/50 ,  H01Q9/0421 ,  H01Q9/14 ,  H01Q9/42 ,  H04N5/44

摘要： The present invention provides an antenna device comprising a conductive substrate and an antenna element located in the proximity of the conductive substrate, in which a portion of the antenna element is formed of a coil or zigzag conductor and an end of the antenna element is connected to the conductive substrate for grounding. In addition, the coil or zigzag conductor is formed at an end of the antenna element and the coil or zigzag conductor and the other end of the antenna element are connected together on an insulator provided on the conductive substrate.

摘要翻译： 本发明提供了一种天线装置，其包括导电基板和位于导电基板附近的天线元件，天线元件的一部分由线圈或之字形导体形成，天线元件的端部连接到 用于接地的导电基板。 此外，线圈或之字形导体形成在天线元件的端部，并且线圈或之字形导体和天线元件的另一端在设置在导电衬底上的绝缘体上连接在一起。

公开(公告)号：US6130626A

公开(公告)日：2000-10-10

申请号：US899483

申请日：1997-07-24

申请人： Joji Kane ,  Takashi Yoshida ,  Noboru Nomura

发明人： Joji Kane ,  Takashi Yoshida ,  Noboru Nomura

IPC分类号： G08G1/01 ,  G08G1/09 ,  G08G1/0967

CPC分类号： G08G1/096716 ,  G08G1/0104 ,  G08G1/09 ,  G08G1/096725 ,  G08G1/09675 ,  G08G1/096775

摘要： A mobile unit support system has a mobile unit and a plurality of sources to be detected installed along a route of movement of said mobile unit, characterized in that said mobile unit includes a storage section for storing in advance the information on the arrangement of said plurality of the sources to be detected, a detection section for detecting said sources to be detected, and an arithmetic processing section for producing predetermined information on the basis of said detection information detected and said arrangement information stored.

摘要翻译： 移动单元支持系统具有沿着所述移动单元的移动路线安装的移动单元和多个待检测的源，其特征在于，所述移动单元包括用于预先存储关于所述多个移动单元的布置的信息的存储部分 要检测的源，用于检测所述检测源的检测部分，以及用于根据检测到的所述检测信息和存储的所述布置信息产生预定信息的算术处理部分。

公开(公告)号：US6087197A

公开(公告)日：2000-07-11

申请号：US227922

申请日：1999-01-08

申请人： Koji Eriguchi ,  Masafumi Kubota ,  Masaaki Niwa ,  Noboru Nomura

发明人： Koji Eriguchi ,  Masafumi Kubota ,  Masaaki Niwa ,  Noboru Nomura

IPC分类号： B81B3/00 ,  G01Q70/10 ,  G01Q70/16 ,  G02B6/12 ,  G02B6/124 ,  G11C23/00 ,  H01H1/00 ,  H01L21/308 ,  H01L31/0352 ,  H01L31/18 ,  H01L33/10 ,  H01L33/18 ,  H01L21/20

CPC分类号： H01L31/1804 ,  B82Y10/00 ,  G02B6/1245 ,  G11C23/00 ,  H01H1/0036 ,  H01L21/3086 ,  H01L31/0352 ,  G02B2006/12102 ,  G02B2006/12173 ,  G02B2006/12176 ,  H01L33/10 ,  H01L33/18 ,  Y02E10/547 ,  Y02P70/521 ,  Y10S438/947 ,  Y10S438/962 ,  Y10S438/964

摘要： On a silicon substrate is formed a silicon dioxide film and then hemispherical grains made of silicon, each having an extremely small diameter, are deposited thereon by LPCVD. After annealing the hemispherical grains, the silicon dioxide film is etched using the hemispherical grains as a first dotted mask, thereby forming a second dotted mask composed of the silicon dioxide film. The resulting second dotted mask is used to etch the silicon substrate to a specified depth from the surface thereof, thereby forming an aggregate of semiconductor micro-needles. Since the diameter of each of the semiconductor micro-needles is sufficiently small to cause the quantum size effects as well as has only small size variations, remarkable quantum size effects can be obtained. Therefore, it becomes possible to constitute a semiconductor apparatus with a high information-processing function by using the aggregate of semiconductor micro-needles (quantized region).

公开(公告)号：US6033928A

公开(公告)日：2000-03-07

申请号：US333320

申请日：1994-11-02

申请人： Koji Eriguchi ,  Masafumi Kubota ,  Masaaki Niwa ,  Noboru Nomura

发明人： Koji Eriguchi ,  Masafumi Kubota ,  Masaaki Niwa ,  Noboru Nomura

IPC分类号： B81B3/00 ,  G01Q70/10 ,  G01Q70/16 ,  G02B6/12 ,  G02B6/124 ,  G11C23/00 ,  H01H1/00 ,  H01L21/308 ,  H01L31/0352 ,  H01L31/18 ,  H01L33/10 ,  H01L33/18 ,  H01L21/32

CPC分类号： H01L31/1804 ,  B82Y10/00 ,  G02B6/1245 ,  G11C23/00 ,  H01H1/0036 ,  H01L21/3086 ,  H01L31/0352 ,  G02B2006/12102 ,  G02B2006/12173 ,  G02B2006/12176 ,  H01L33/10 ,  H01L33/18 ,  Y02E10/547 ,  Y02P70/521 ,  Y10S438/947 ,  Y10S438/962 ,  Y10S438/964

摘要： On a silicon substrate is formed a silicon dioxide film and then hemispherical grains made of silicon, each having an extremely small diameter, are deposited thereon by LPCVD. After annealing the hemispherical grains, the silicon dioxide film is etched using the hemispherical grains as a first dotted mask, thereby forming a second dotted mask composed of the silicon dioxide film. The resulting second dotted mask is used to etch the silicon substrate to a specified depth from the surface thereof, thereby forming an aggregate of semiconductor micro-needles. Since the diameter of each of the semiconductor micro-needles is sufficiently small to cause the quantum size effects as well as has only small size variations, remarkable quantum size effects can be obtained. Therefore, it becomes possible to constitute a semiconductor apparatus with a high information-processing function by using the aggregate of semiconductor micro-needles (quantized region).

摘要翻译： 在硅衬底上形成二氧化硅膜，然后通过LPCVD在其上沉积各自具有极小直径的由硅制成的半球状晶粒。 在半球形晶粒退火之后，使用半球形晶粒作为第一虚线掩模来蚀刻二氧化硅膜，由此形成由二氧化硅膜构成的第二虚线掩模。 所得到的第二点阵掩模用于将硅衬底从其表面蚀刻到指定的深度，从而形成半导体微针的聚集体。 由于每个半导体微针的直径足够小以致量子尺寸效应以及仅具有小的尺寸变化，因此可以获得显着的量子尺寸效应。 因此，通过使用半导体微针的集合体（量化区域），可以构成具有高信息处理功能的半导体装置。

公开(公告)号：US5863338A

公开(公告)日：1999-01-26

申请号：US583662

申请日：1996-01-05

申请人： Yuichiro Yamada ,  Naoki Suzuki ,  Ryuzo Houchin ,  Noboru Nomura ,  Kousaku Yano ,  Yuka Terai

发明人： Yuichiro Yamada ,  Naoki Suzuki ,  Ryuzo Houchin ,  Noboru Nomura ,  Kousaku Yano ,  Yuka Terai

IPC分类号： H01L21/205 ,  B05D1/18 ,  B05D7/24 ,  C23C16/54 ,  H01L21/302 ,  C23C16/00

CPC分类号： B82Y30/00 ,  B05D1/185 ,  B05D1/60 ,  B82Y40/00 ,  C23C16/54

摘要： A forming apparatus of a thin film, includes a processing chamber where a predetermined process is carried out on a surface of a supplied substrate, and a feeding device, which is provided in the processing chamber, for feeding material to form an organic molecular layer including silicon or germanium on the surface of the substrate. A forming method of a thin film, includes steps of forming a thin film on a surface of a supplied substrate in a processing chamber, and feeding material for forming an organic molecular layer including silicon or germanium on the formed thin film on the surface of the substrate through a feeding device in the processing chamber, and then forming the organic molecular layer on the surface of the substrate.

摘要翻译： 薄膜的成形装置包括处理室，其中在所提供的基板的表面上执行预定的处理;以及馈送装置，其设置在处理室中，用于馈送材料以形成有机分子层，所述有机分子层包括 硅或锗在基板的表面上。 薄膜的形成方法包括以下步骤：在处理室中的供给的基板的表面上形成薄膜，以及在所形成的薄膜上形成包含硅或锗的有机分子层的供给材料 基板通过处理室中的进料装置，然后在基板的表面上形成有机分子层。