公开(公告)号：US20140042618A1

公开(公告)日：2014-02-13

申请号：US14055993

申请日：2013-10-17

Applicant: Micron Technology, Inc.

Inventor： Jaspreet S. Gandhi ,  Don L. Yates ,  Yangyang Sun

IPC: H01L23/498 ,  H01L23/48

CPC classification number: H01L23/49811 ,  H01L21/76804 ,  H01L21/76814 ,  H01L21/76828 ,  H01L23/293 ,  H01L23/3171 ,  H01L23/48 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L24/14 ,  H01L2224/03464 ,  H01L2224/03472 ,  H01L2224/0348 ,  H01L2224/0401 ,  H01L2224/05005 ,  H01L2224/05026 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05572 ,  H01L2224/05582 ,  H01L2224/05644 ,  H01L2224/0603 ,  H01L2224/12105 ,  H01L2224/131 ,  H01L2224/1403 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01044 ,  H01L2924/01049 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/00012 ,  H01L2924/206 ,  H01L2224/05552

Abstract: Methods of forming a Ni material on a bond pad are disclosed. The methods include forming a dielectric material over a bond pad, forming an opening within the dielectric material to expose the bond pad, curing the dielectric material to form a surface of the dielectric material having a steep curvilinear profile, and forming a nickel material over the at least one bond pad. The dielectric material having a steep curvilinear profile may be formed by altering at least one of a curing process of the dielectric material and a thickness of the dielectric material. The dielectric material may be used to form a relatively thick Ni material on bond pads smaller than about 50 μm. Semiconductor structures formed by such methods are also disclosed.

Abstract translation: 公开了在接合焊盘上形成Ni材料的方法。 所述方法包括在接合焊盘上形成电介质材料，在电介质材料内形成开口以露出接合焊盘，固化电介质材料以形成具有陡峭曲线轮廓的电介质材料的表面，并在 至少一个键盘。 可以通过改变介电材料的固化过程和电介质材料的厚度中的至少一个来形成具有陡峭曲线轮廓的电介质材料。 电介质材料可用于在小于约50μm的接合焊盘上形成相对较厚的Ni材料。 还公开了通过这些方法形成的半导体结构。

公开(公告)号：US08872356B2

公开(公告)日：2014-10-28

申请号：US14055993

申请日：2013-10-17

Applicant: Micron Technology, Inc.

Inventor： Jaspreet S. Gandhi ,  Don L. Yates ,  Yangyang Sun

IPC: H01L23/48 ,  H01L23/52 ,  H01L23/29 ,  H01L23/31 ,  H01L23/498 ,  H01L23/00 ,  H01L21/768

CPC classification number: H01L23/49811 ,  H01L21/76804 ,  H01L21/76814 ,  H01L21/76828 ,  H01L23/293 ,  H01L23/3171 ,  H01L23/48 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L24/14 ,  H01L2224/03464 ,  H01L2224/03472 ,  H01L2224/0348 ,  H01L2224/0401 ,  H01L2224/05005 ,  H01L2224/05026 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05572 ,  H01L2224/05582 ,  H01L2224/05644 ,  H01L2224/0603 ,  H01L2224/12105 ,  H01L2224/131 ,  H01L2224/1403 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01044 ,  H01L2924/01049 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/00012 ,  H01L2924/206 ,  H01L2224/05552

Abstract: Methods of forming a Ni material on a bond pad are disclosed. The methods include forming a dielectric material over an at least one bond pad, forming an opening within the dielectric material to expose the at least one bond pad, curing the dielectric material to form a surface of the dielectric material having a steep curvilinear profile, and forming a nickel material over the at least one bond pad. The dielectric material having a steep curvilinear profile may be formed by altering at least one of a curing process of the dielectric material and a thickness of the dielectric material. The dielectric material may be used to form a relatively thick Ni material on bond pads smaller than about 50 μm. Semiconductor structures formed by such methods are also disclosed.

Abstract translation: 公开了在接合焊盘上形成Ni材料的方法。 所述方法包括在至少一个接合焊盘上形成电介质材料，在电介质材料内形成开口以暴露至少一个接合焊盘，固化电介质材料以形成具有陡峭曲线轮廓的电介质材料的表面，以及 在所述至少一个接合垫上形成镍材料。 可以通过改变介电材料的固化过程和电介质材料的厚度中的至少一个来形成具有陡峭曲线轮廓的电介质材料。 电介质材料可以用于在小于约50μm的接合焊盘上形成相对较厚的Ni材料。 还公开了通过这些方法形成的半导体结构。