公开(公告)号：US09105665B2

公开(公告)日：2015-08-11

申请号：US14290215

申请日：2014-05-29

Applicant: Micron Technology, Inc.

Inventor： Rhett T. Brewer ,  Durai V. Ramaswamy

IPC: H01L21/44 ,  H01L29/66 ,  H01L21/28 ,  H01L27/115 ,  H01L29/423 ,  H01L29/51 ,  H01L29/788 ,  H01L21/24 ,  H01L21/265

CPC classification number: H01L29/42324 ,  G11C14/0018 ,  G11C16/0408 ,  G11C16/0483 ,  G11C16/08 ,  H01L21/244 ,  H01L21/265 ,  H01L21/28273 ,  H01L21/44 ,  H01L27/11521 ,  H01L27/11524 ,  H01L29/42332 ,  H01L29/4916 ,  H01L29/511 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/788 ,  H01L29/7881

Abstract: Methods of forming memory cells including a charge storage structure having a gettering agent therein can be useful for non-volatile memory devices. Providing for gettering of oxygen from a charge-storage material of the charge storage structure can facilitate a mitigation of detrimental oxidation of the charge-storage material.

Abstract translation: 包括其中具有吸杂剂的电荷存储结构的存储单元的方法可用于非易失性存储器件。 提供从电荷存储结构的电荷储存材料中吸收氧气可以有助于减轻电荷存储材料的有害氧化。

公开(公告)号：US10734491B2

公开(公告)日：2020-08-04

申请号：US16057998

申请日：2018-08-08

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Rhett T. Brewer ,  Durai V. Ramaswamy

IPC: H01L29/423 ,  H01L21/44 ,  H01L21/28 ,  H01L27/11521 ,  H01L29/51 ,  H01L29/788 ,  H01L29/66 ,  H01L29/49 ,  G11C14/00 ,  G11C16/04 ,  G11C16/08 ,  H01L27/11524 ,  H01L21/24 ,  H01L21/265

Abstract: Memory devices might include an array of memory cells and a control logic to control access of the array of memory cells, where a memory cell of the array of memory cells might include a first dielectric adjacent a semiconductor, a control gate, a second dielectric between the control gate and the first dielectric, and a charge storage structure between the first dielectric and the second dielectric, wherein the charge storage structure comprises a charge-storage material and a gettering agent.

公开(公告)号：US20180350930A1

公开(公告)日：2018-12-06

申请号：US16057998

申请日：2018-08-08

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Rhett T. Brewer ,  Durai V. Ramaswamy

IPC: H01L29/423 ,  H01L29/788 ,  G11C14/00 ,  H01L29/66 ,  H01L29/51 ,  H01L29/49 ,  H01L27/11524 ,  H01L27/11521 ,  H01L21/44 ,  H01L21/28 ,  G11C16/04 ,  G11C16/08 ,  H01L21/24 ,  H01L21/265

Abstract: Memory devices might include an array of memory cells and a control logic to control access of the array of memory cells, where a memory cell of the array of memory cells might include a first dielectric adjacent a semiconductor, a control gate, a second dielectric between the control gate and the first dielectric, and a charge storage structure between the first dielectric and the second dielectric, wherein the charge storage structure comprises a charge-storage material and a gettering agent.

公开(公告)号：US09576805B2

公开(公告)日：2017-02-21

申请号：US14667385

申请日：2015-03-24

Applicant: Micron Technology, Inc.

Inventor： D. V. Nirmal Ramaswamy ,  Matthew N. Rocklein ,  Rhett T. Brewer

IPC: G11C11/56 ,  H01L29/792 ,  H01L21/336 ,  H01L21/28 ,  B82Y10/00 ,  H01L21/02 ,  H01L29/423

CPC classification number: H01L21/28282 ,  B82Y10/00 ,  G11C11/5671 ,  H01L21/02148 ,  H01L21/0228 ,  H01L21/02323 ,  H01L21/28273 ,  H01L29/42332 ,  H01L29/42348

Abstract: Memories, systems, and methods for forming memory cells are disclosed. One such memory cell includes a charge storage node that includes nanodots over a tunnel dielectric and a protective film over the nanodots. In another memory cell, the charge storage node includes nanodots that include a ruthenium alloy. Memory cells can include an inter-gate dielectric over the protective film or ruthenium alloy nanodots and a control gate over the inter-gate dielectric. The protective film and ruthenium alloy can be configured to protect at least some of the nanodots from vaporizing during formation of the inter-gate dielectric.

Abstract translation: 公开了用于形成存储器单元的存储器，系统和方法。 一个这种存储单元包括电荷存储节点，其在隧道电介质上方包括纳米点，并且在纳米点上包括保护膜。 在另一个存储单元中，电荷存储节点包括包含钌合金的纳米点。 存储单元可以包括在保护膜或钌合金纳米点上的栅极间电介质和在栅极间电介质上的控制栅极。 保护膜和钌合金可以被配置为在形成栅极间电介质期间保护至少一些纳米点不被蒸发。

公开(公告)号：US20150200101A1

公开(公告)日：2015-07-16

申请号：US14667385

申请日：2015-03-24

Applicant: Micron Technology, Inc.

Inventor： D.V. Nirmal Ramaswamy ,  Matthew N. Rocklein ,  Rhett T. Brewer

IPC: H01L21/28 ,  H01L21/02

CPC classification number: H01L21/28282 ,  B82Y10/00 ,  G11C11/5671 ,  H01L21/02148 ,  H01L21/0228 ,  H01L21/02323 ,  H01L21/28273 ,  H01L29/42332 ,  H01L29/42348

Abstract: Memories, systems, and methods for forming memory cells are disclosed. One such memory cell includes a charge storage node that includes nanodots over a tunnel dielectric and a protective film over the nanodots. In another memory cell, the charge storage node includes nanodots that include a ruthenium alloy. Memory cells can include an inter-gate dielectric over the protective film or ruthenium alloy nanodots and a control gate over the inter-gate dielectric. The protective film and ruthenium alloy can be configured to protect at least some of the nanodots from vaporizing during formation of the inter-gate dielectric.

Abstract translation: 公开了用于形成存储器单元的存储器，系统和方法。 一个这种存储单元包括电荷存储节点，其在隧道电介质上方包括纳米点，并且在纳米点上包括保护膜。 在另一个存储单元中，电荷存储节点包括包含钌合金的纳米点。 存储单元可以包括在保护膜或钌合金纳米点上的栅极间电介质和在栅极间电介质上的控制栅极。 保护膜和钌合金可以被配置为在形成栅极间电介质期间保护至少一些纳米点不被蒸发。

公开(公告)号：US20170062577A1

公开(公告)日：2017-03-02

申请号：US15351977

申请日：2016-11-15

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Rhett T. Brewer ,  Durai V. Ramaswamy

IPC: H01L29/423 ,  G11C14/00 ,  G11C16/04 ,  G11C16/08 ,  H01L29/788 ,  H01L27/115

CPC classification number: H01L29/42324 ,  G11C14/0018 ,  G11C16/0408 ,  G11C16/0483 ,  G11C16/08 ,  H01L21/244 ,  H01L21/265 ,  H01L21/28273 ,  H01L21/44 ,  H01L27/11521 ,  H01L27/11524 ,  H01L29/42332 ,  H01L29/4916 ,  H01L29/511 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/788 ,  H01L29/7881

Abstract: Apparatus having a processor and a memory device in communication with the processor, the memory device including an array of memory cells and a control logic to control access of the array of memory cells, wherein the array of memory cells includes a memory cell having a first dielectric adjacent a semiconductor, a control gate, a second dielectric between the control gate and the first dielectric, and a charge storage structure between the first dielectric and the second dielectric, and wherein the charge storage structure includes a charge-storage material and a gettering agent.

Abstract translation: 具有与处理器通信的处理器和存储器件的设备，所述存储器设备包括存储器单元阵列和控制存储器单元阵列的访问的控制逻辑，其中所述存储器单元阵列包括具有第一 邻近半导体的介质，控制栅极，控制栅极和第一电介质之间的第二电介质，以及第一电介质和第二电介质之间的电荷存储结构，其中电荷存储结构包括电荷存储材料和吸气 代理商

公开(公告)号：US10074724B2

公开(公告)日：2018-09-11

申请号：US15351977

申请日：2016-11-15

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Rhett T. Brewer ,  Durai V. Ramaswamy

IPC: H01L29/423 ,  H01L21/44 ,  H01L21/28 ,  H01L27/11521 ,  H01L29/51 ,  H01L29/788 ,  H01L29/66 ,  H01L29/49 ,  G11C14/00 ,  G11C16/04 ,  G11C16/08 ,  H01L27/11524 ,  H01L21/24 ,  H01L21/265

CPC classification number: H01L29/42324 ,  G11C14/0018 ,  G11C16/0408 ,  G11C16/0483 ,  G11C16/08 ,  H01L21/244 ,  H01L21/265 ,  H01L21/44 ,  H01L27/11521 ,  H01L27/11524 ,  H01L29/40114 ,  H01L29/42332 ,  H01L29/4916 ,  H01L29/511 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/788 ,  H01L29/7881

Abstract: Apparatus having a processor and a memory device in communication with the processor, the memory device including an array of memory cells and a control logic to control access of the array of memory cells, wherein the array of memory cells includes a memory cell having a first dielectric adjacent a semiconductor, a control gate, a second dielectric between the control gate and the first dielectric, and a charge storage structure between the first dielectric and the second dielectric, and wherein the charge storage structure includes a charge-storage material and a gettering agent.

公开(公告)号：US20140264526A1

公开(公告)日：2014-09-18

申请号：US14290215

申请日：2014-05-29

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Rhett T. Brewer ,  Durai V. Ramaswamy

IPC: H01L29/66

CPC classification number: H01L29/42324 ,  G11C14/0018 ,  G11C16/0408 ,  G11C16/0483 ,  G11C16/08 ,  H01L21/244 ,  H01L21/265 ,  H01L21/28273 ,  H01L21/44 ,  H01L27/11521 ,  H01L27/11524 ,  H01L29/42332 ,  H01L29/4916 ,  H01L29/511 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/788 ,  H01L29/7881

Abstract: Methods of forming memory cells including a charge storage structure having a gettering agent therein can be useful for non-volatile memory devices. Providing for gettering of oxygen from a charge-storage material of the charge storage structure can facilitate a mitigation of detrimental oxidation of the charge-storage material.

Abstract translation: 包括其中具有吸杂剂的电荷存储结构的存储单元的方法可用于非易失性存储器件。 提供从电荷存储结构的电荷储存材料中吸收氧气可以有助于减轻电荷存储材料的有害氧化。