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    SCALING FACTORS FOR MEDIA MANAGEMENT OPERATIONS AT A MEMORY DEVICE
    2.
    发明申请
    SCALING FACTORS FOR MEDIA MANAGEMENT OPERATIONS AT A MEMORY DEVICE 有权

    公开(公告)号：US20220066924A1

    公开(公告)日：2022-03-03

    申请号：US17005164

    申请日：2020-08-27

    Applicant: MICRON TECHNOLOGY, INC.

    Inventor： Mikai Chen ,  Zhenlei Shen ,  Murong Lang ,  Zhenming Zhou

    IPC: G06F12/02 ,  G06F11/07 ,  G06F11/30

    Abstract: A processing device of a memory sub-system performs an operation including obtaining, at a first time, a first scaling factor for a data unit of a set of data units of a memory device. The first scaling factor is associated with a first number of write operations performed at the data unit and a first number of read operations performed at the data unit. The processing device also performs an operation including calculating a first media management metric based on at least the first scaling factor, the first number of write operations, and the first number of read operations. In response to determining that the first media management metric satisfies a media management criterion, the processing device performs a media management operation on the data unit.

    Power-on read demarcation voltage optimization
    3.
    发明授权
    Power-on read demarcation voltage optimization 有权

    公开(公告)号：US11756597B2

    公开(公告)日：2023-09-12

    申请号：US17393112

    申请日：2021-08-03

    Applicant: Micron Technology, Inc.

    Inventor： Mikai Chen ,  Zhenlei Shen ,  Murong Lang ,  Zhenming Zhou

    IPC: G11C7/20 ,  G11C5/14 ,  G11C11/4096 ,  G11C7/10

    CPC classification number: G11C7/20 ,  G11C5/148 ,  G11C7/1063 ,  G11C11/4096

    Abstract: A system includes a memory device having memory cells and a processing device operatively coupled to the memory device. The processing device is to perform operations including: determining a length of time the memory device has been powered off; and in response to determining that the length of time satisfies a threshold value: for each of multiple groups of memory cells, asserting a corresponding flag; determining, based on the length of time, one or more adjusted demarcation voltages to be used in reading a state of the multiple groups of memory cells; and storing the one or more adjusted demarcation voltages for use in performing memory operations.

    LAYER INTERLEAVING IN MULTI-LAYERED MEMORY
    5.
    发明申请
    LAYER INTERLEAVING IN MULTI-LAYERED MEMORY 有权

    公开(公告)号：US20220261345A1

    公开(公告)日：2022-08-18

    申请号：US17736824

    申请日：2022-05-04

    Applicant: Micron Technology Inc.

    Inventor： Mikai Chen ,  Zhengang Chen ,  Charles See Yeung Kwong

    IPC: G06F12/06 ,  G06F12/02

    Abstract: In a memory sub-system, data can be received to be stored at a 3-dimensional (3D) memory component in response to a write operation. A first location of a first layer of the 3D memory component is determined at which to store a first portion of the data, where the first layer is within a first logical unit. A second location of a second layer of the 3D memory component is determined at which to store a second portion of the data, where the second layer is within a second logical unit that is different than the first logical unit. The first portion of the data is caused to be stored in first memory cells at the first location within the first layer. The second portion of the data is caused to be stored in second memory cells at the second location within the second layer.

    LAYER INTERLEAVING IN MULTI-LAYERED MEMORY
    6.
    发明申请
    LAYER INTERLEAVING IN MULTI-LAYERED MEMORY 有权

    公开(公告)号：US20210042224A1

    公开(公告)日：2021-02-11

    申请号：US16531305

    申请日：2019-08-05

    Applicant: MICRON TECHNOLOGY, INC.

    Inventor： Mikai Chen ,  Zhengang Chen ,  Charles See Yeung Kwong

    IPC: G06F12/06 ,  G06F12/02

    Abstract: Data can be received to be stored at a memory component. A first location of a first layer of the memory component to store a first portion of the data can be determined. A second location of a second layer of the memory component to store a second portion of the data can be determined, where the second layer is different from the first layer. The first portion of the data can be stored at the first layer of the memory component and the second portion of the data can be stored at the second layer of the memory component.

    Memory sub-system temperature throttling relaxation
    9.
    发明授权
    Memory sub-system temperature throttling relaxation 有权

    公开(公告)号：US11635794B2

    公开(公告)日：2023-04-25

    申请号：US16988854

    申请日：2020-08-10

    Applicant: Micron Technology, Inc.

    Inventor： Mikai Chen ,  Zhenming Zhou ,  Zhenlei Shen ,  Murong Lang

    IPC: G05D23/00 ,  G06F1/20 ,  G06F11/30

    Abstract: A method includes monitoring temperature characteristics for a plurality of memory components of a memory sub-system and determining that a temperature characteristic corresponding to at least one of the memory components has reached a threshold temperature. The method further includes determining a data reliability parameter for the at least one of the memory components that has reached the threshold temperature, determining whether the determined data reliability parameter is below a threshold data reliability parameter value for the at least one of the memory components that has reached the threshold temperature, and, based on determining that the data reliability parameter for the at least one of the memory components that has reached the threshold temperature is below the threshold data reliability parameter value, refraining from performing a thermal throttling operation.

    ADAPTIVELY PERFORMING MEDIA MANAGEMENT OPERATIONS ON A MEMORY DEVICE
    10.
    发明申请
    ADAPTIVELY PERFORMING MEDIA MANAGEMENT OPERATIONS ON A MEMORY DEVICE 有权

    公开(公告)号：US20230059589A1

    公开(公告)日：2023-02-23

    申请号：US17445293

    申请日：2021-08-17

    Applicant: Micron Technology, Inc.

    Inventor： Mikai Chen ,  Murong Lang ,  Zhenming Zhou

    IPC: G06F3/06 ,  G06F12/02

    Abstract: A respective write cycle count for each of a plurality of data units of a memory device is obtained. Based on the respective write cycle count, whether a data unit of the plurality of data units satisfies a media management criterion is determined. Responsive to determining that the respective write cycle count satisfies the media management criterion, a media management operation every first constant cycle count on the data unit is performed. Responsive to determining that the respective write cycle count does not satisfy the media management criterion, a media management operation every second constant cycle count on the data unit is performed. The second constant cycle count is less than the first constant count.

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