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    Optical component mounting substrate and method of producing the same
    1.
    发明授权
    Optical component mounting substrate and method of producing the same 失效
    光学部件安装基板及其制造方法

    公开(公告)号：US5425118A

    公开(公告)日：1995-06-13

    申请号：US174475

    申请日：1993-12-28

    申请人： Miho Sugihara ,  Masaki Aoki ,  Makoto Umetani ,  Yoshinari Kashiwagi ,  Kenji Inoue

    发明人： Miho Sugihara ,  Masaki Aoki ,  Makoto Umetani ,  Yoshinari Kashiwagi ,  Kenji Inoue

    IPC分类号： G02B6/24 ,  B29D11/00 ,  C03B11/08 ,  G02B6/12 ,  G02B6/13 ,  G02B6/30 ,  G02B6/36 ,  G02B6/38 ,  G02B6/40

    CPC分类号： G02B6/3865 ,  B29D11/0075 ,  C03B11/082 ,  G02B6/13 ,  G02B6/30 ,  G02B6/368 ,  G02B6/3839 ,  C03B2215/413 ,  G02B2006/12038 ,  G02B6/3652 ,  G02B6/3696

    摘要： An optical component mounting substrate which comprises grooves for holding optical fibers, other grooves for optical components being inserted and optical waveguides is produced with a press molding process. A mold having convex and/or concave surface profiles which are corresponding to the grooves and the optical waveguides to be formed on a surface of the optical component mounting substrate is used as a die in the press molding process. The surface profiles of the mold are precisely transferred onto the surface of a transparent glass base substrate, thereby forming the optical component mounting substrate having a desired surface configuration including the grooves and the optical waveguides. Optical fibers are aligned along the grooves and fixed by a light-curing adhesive. Since a press molding process is applied, the optical component mounting substrate can be produced easily at a low cost with mass production and also can attain many advantages such as small coupling loss, small crosstalk, high positional accuracy, excellent reproducibility and high reliability.

    摘要翻译： 一种光学部件安装基板，其包括用于保持光纤的槽，用于插入光学部件的其它槽和光波导通过压制成型工艺制造。 在压制成型工序中，将具有与形成在光学部件安装基板的表面上的凹槽和光波导对应的凸形和/或凹面形状的模具用作模具。 模具的表面轮廓精确地转移到透明玻璃基底的表面上，从而形成具有包括凹槽和光波导的所需表面构造的光学部件安装基板。 光纤沿着凹槽排列并用光固化粘合剂固定。 由于应用压制成型工艺，所以光学部件安装基板可以以低成本容易地制造，并且可以获得诸如耦合损耗小，串扰小，位置精度高，再现性好，可靠性高等优点。

    Method of manufacturing molds for molding optical glass elements and diffraction gratings
    5.
    发明授权
    Method of manufacturing molds for molding optical glass elements and diffraction gratings 失效
    制造用于模制光学玻璃元件和衍射光栅的模具的方法

    公开(公告)号：US4842633A

    公开(公告)日：1989-06-27

    申请号：US235301

    申请日：1988-08-23

    申请人： Kiyoshi Kuribayashi ,  Makoto Umetani ,  Hideto Monji ,  Masaki Aoki

    发明人： Kiyoshi Kuribayashi ,  Makoto Umetani ,  Hideto Monji ,  Masaki Aoki

    IPC分类号： B22F5/00 ,  C03B11/08

    CPC分类号： C03B11/086 ,  B22F5/007 ,  C03B11/082 ,  C03B2215/12 ,  C03B2215/16 ,  C03B2215/17 ,  C03B2215/22 ,  C03B2215/32 ,  C03B2215/34 ,  C03B2215/41 ,  C03B2215/412 ,  Y10S359/90

    摘要： A base material excellent in heat resistance and high-temperature strength is processed into a desired configuration. The processed base material is coated with a heat-resistant film having excellent strength at high temperatures and low reactivity with a glass material to be molded. A resist is applied on the heat resistant film and a desired pattern is drawn thereon by means of electron beam, ion beam, hologram exposure, or ordinary photolithography. Or if a mold having deep unevenness of the pressing surface is required, the resist is applied after an intermediate layer which permits selective etching is formed on the heat resistant film, and the required pattern is drawn thereon by means of electron beam, ion beam, hologram exposure, or ordinary photolithography. The intermediate layer is removed by wet etching or dry etching to emphasize unevenness of the mask. The resist film or the resist film and intermediate layer film are completely removed and a part of the heat-resistant film is removed to obtain a mold having the desired configuration of the molding surface.

    摘要翻译： 将耐热性和耐高温性优异的基材加工成所希望的结构。 加工后的基材在高温下具有优异的强度和与待成型的玻璃材料的反应性低的耐热膜。 将抗蚀剂施加在耐热膜上，并且通过电子束，离子束，全息曝光或普通光刻法将期望的图案拉到其上。 或者如果需要具有挤压表面的深度不均匀的模具，则在耐热膜上形成允许选择性蚀刻的中间层之后施加抗蚀剂，并且通过电子束，离子束， 全息曝光或普通光刻。 通过湿蚀刻或干蚀刻去除中间层，以强调掩模的不均匀性。 完全除去抗蚀剂膜或抗蚀膜和中间层膜，除去一部分耐热膜，得到具有所需成型面的模具。

    SEMICONDUCTOR MEMORY AND SYSTEM
    7.
    发明申请
    SEMICONDUCTOR MEMORY AND SYSTEM 有权
    半导体存储器和系统

    公开(公告)号：US20120087172A1

    公开(公告)日：2012-04-12

    申请号：US13240492

    申请日：2011-09-22

    申请人： Masaki Aoki

    发明人： Masaki Aoki

    IPC分类号： G11C11/00

    CPC分类号： G11C13/003 ,  G11C11/16 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  G11C13/0004 ,  G11C13/0007 ,  G11C13/004 ,  G11C29/021 ,  G11C29/028 ,  G11C2213/79

    摘要： A semiconductor memory includes a real memory cell including a selection transistor and a resistance variable element which are connected in series between a first voltage line and a second voltage line through a connection node, a real amplification transistor having a gate connected to the connection node, a source connected to a reference voltage line, and a drain connected to a real read line, and a sense amplifier to determine a logic held in the real memory cell by receiving a voltage of the real read line varied with a voltage generated in the connection node by resistance dividing between a source/drain resistance of the selection transistor, and the resistance variable element, the selection transistor receiving a read control voltage at the gate thereof.

    摘要翻译： 半导体存储器包括：实际存储单元，包括通过连接节点串联连接在第一电压线和第二电压线之间的选择晶体管和电阻可变元件，具有连接到连接节点的栅极的实际放大晶体管， 连接到参考电压线的源极和连接到实际读取线的漏极，以及读出放大器，用于通过接收由连接中产生的电压而变化的真实读取线的电压来确定保持在实际存储单元中的逻辑 所述选择晶体管在所述栅极处接收读取控制电压，所述选择晶体管在所述栅极处接收读取控制电压。

    MAGNETIC RANDOM ACCESS MEMORY
    8.
    发明申请
    MAGNETIC RANDOM ACCESS MEMORY 审中-公开
    磁性随机存取存储器

    公开(公告)号：US20100208515A1

    公开(公告)日：2010-08-19

    申请号：US12702847

    申请日：2010-02-09

    申请人： Masaki Aoki ,  Lee Young Min

    发明人： Masaki Aoki ,  Lee Young Min

    IPC分类号： G11C11/14 ,  G11C11/416 ,  H01L29/82

    CPC分类号： H01L27/228 ,  B82Y25/00 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  H01F10/3254 ,  H01L43/08

    摘要： The spin torque transfer magnetic random access memory includes a magnetic tunnel junction element including a pinned layer, a free layer, and a tunnel insulating film formed between the pinned layer and the free layer, and a memory cell select transistor having one diffused region electrically connected to a side of the fee layer of the magnetic tunnel junction element.

    摘要翻译： 自旋转矩传递磁随机存取存储器包括磁性隧道结元件，其包括形成在被钉扎层和自由层之间的钉扎层，自由层和隧道绝缘膜，以及存储单元选择晶体管，其具有电连接的一个扩散区域 到磁性隧道结元件的费用层的一侧。

    Magnetic memory device and method for reading the same
    9.
    发明授权
    Magnetic memory device and method for reading the same 有权
    磁记忆装置及其读取方法

    公开(公告)号：US07489577B2

    公开(公告)日：2009-02-10

    申请号：US11808967

    申请日：2007-06-14

    申请人： Yoshihiro Sato ,  Masaki Aoki

    发明人： Yoshihiro Sato ,  Masaki Aoki

    IPC分类号： G11C7/02

    CPC分类号： G11C11/16

    摘要： A magnetic memory device comprises a plurality of bit lines BL; memory cells MC disposed at the respective plurality of bit lines, and each including a magnetoresistive effect element MTJ whose resistance value is changed with changes of magnetization direction, and a select transistor Tr connected to the magnetoresistive effect element MTJ, the magnetoresistive effect element MC having one terminal connected to the bit line BL and the other terminal connected to a first signal line GND via the select transistor; dummy cells DC disposed at the respective plurality of bit lines BL, and each including a resistance element R of a constant resistance value, the resistance element having one terminal connected to the bit line BL and the other terminal connected to a second signal line SIGD; and a voltage sense amplifier SA connected to the plurality of bit lines BL.

    摘要翻译： 磁存储器件包括多个位线BL; 存储单元MC设置在相应的多个位线处，并且每个存储单元MC包括电阻值随着磁化方向的变化而变化的磁阻效应元件MTJ以及连接到磁阻效应元件MTJ的选择晶体管Tr，磁阻效应元件MC具有 一个端子连接到位线BL，另一个端子经由选择晶体管连接到第一信号线GND; 设置在各个位线BL上的虚设单元DC，并且每个都包括具有恒定电阻值的电阻元件R，该电阻元件具有连接到位线BL的一个端子，而另一个端子连接到第二信号线SIGD; 以及连接到多个位线BL的电压检测放大器SA。

    Plasma display device and method of preparing phosphor
    10.
    发明授权
    Plasma display device and method of preparing phosphor 失效
    等离子体显示装置及其制备方法

    公开(公告)号：US07486010B2

    公开(公告)日：2009-02-03

    申请号：US10517262

    申请日：2004-02-18

    申请人： Kazuhiko Sugimoto ,  Junichi Hibino ,  Masaki Aoki ,  Yoshinori Tanaka ,  Hiroshi Setoguchi

    发明人： Kazuhiko Sugimoto ,  Junichi Hibino ,  Masaki Aoki ,  Yoshinori Tanaka ,  Hiroshi Setoguchi

    IPC分类号： C09K11/08 ,  C09K11/64 ,  H01J17/49

    CPC分类号： C09K11/7734 ,  H01J2211/42

    摘要： In a phosphor whose host crystal is constituted of an oxide, a method of preparing the phosphor where the oxygen deficiencies in the phosphor are not many, and a plasma display device using the same are provided. After processes of weighing, mixing and filling powders of the phosphor, a process for firing in a reducing atmosphere and a process for firing in an oxidizing atmosphere after the last reducing atmosphere process are provided. In addition, a firing temperature in the oxidizing atmosphere process is not less than 600° C. and not more than 1000° C.

    摘要翻译： 在主晶体由氧化物构成的荧光体中，提供了荧光体中的氧缺乏量不多的荧光体的制造方法和使用该荧光体的等离子体显示装置。 在进行称重，混合和填充荧光体粉末的工艺之后，提供在还原气氛中焙烧的方法和在最后的还原气氛处理之后在氧化气氛中烧制的方法。 此外，氧化气氛中的烧成温度为600℃以上1000℃以下