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1.发明授权
公开(公告)号：US4444801A
公开(公告)日：1984-04-24
申请号：US338864
申请日：1982-01-12
摘要： A method and apparatus for correcting transparent defects on a photomask are disclosed. A metal-organic complex solution is applied to a transparent defect portion and its periphery on the photomask. The transparent defect portion is then exposed to a visible ray or ultraviolet ray to deposit a metal, a metal oxide or a composition thereof, while the light transmission quantity through the transparent defect portion is measured. After the measurement falls below a predetermined level relative to the quantity of the transmitted light at the start of exposure, the exposure is terminated to thereby complete the correction of the transparent defects.
摘要翻译： 公开了一种用于校正光掩模上的透明缺陷的方法和装置。 将金属 - 有机络合物溶液施加到光掩模上的透明缺陷部分及其周边。 然后透明的缺陷部分暴露于可见光或紫外线以沉积金属，金属氧化物或其组合物，同时测量通过透明缺陷部分的透光量。 在相对于曝光开始时的透射光量的测量值下降到预定水平之外，终止曝光，从而完成透明缺陷的校正。
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公开(公告)号：US4463073A
公开(公告)日：1984-07-31
申请号：US394642
申请日：1982-07-01
申请人： Tateoki Miyauchi , Katsuro Mizukoshi , Mikio Hongo , Masao Mitani , Masaaki Okunaka , Takao Kawanabe , Isao Tanabe
发明人： Tateoki Miyauchi , Katsuro Mizukoshi , Mikio Hongo , Masao Mitani , Masaaki Okunaka , Takao Kawanabe , Isao Tanabe
IPC分类号： G03F1/00 , G03F1/72 , H01L21/027 , H01L21/30 , G03F9/00
CPC分类号： G03F1/72 , H01L21/30 , Y10S430/139 , Y10S430/146
摘要： A method and apparatus for repairing defect portions of a photomask. A complex material from which a light shading material can be deposited is applied over the photomask. A white (blank) defect region is irradiated with a continuous wave laser light beam projected in a slit-like light image to thereby convert the complex material into the shading material. After washing, a half-deposited portion formed in a peripheral portion of the light shading region is further deposited by a post-baking process. Those portions of the light shading film which depart from the desired mask pattern are removed together with black (solid) defect portion originally present in the photomask through irradiation with a pulse laser light beam. The pulse laser is constituted by a Dye-laser, while the continuous wave laser is constituted by an Ar-laser. A specific half-mirror which transmits therethrough Ar-laser light while reflecting Dye-laser light is displaceable provided. The white and the black defects are selectively centered on a same optical axis of an optical projection system including a slit and a condenser lens, whereby the white and the black defect portions are each removed through irradiation with the associated laser light projected thereto in a slit-like light image through the same optical projection system.
摘要翻译： 一种用于修复光掩模的缺陷部分的方法和装置。 将光阴影材料沉积的复合材料施加在光掩模上。 用投影在狭缝状光图像中的连续波激光束照射白色（空白）缺陷区域，从而将复合材料转换成遮光材料。 洗涤后，通过后烘烤处理进一步沉积形成在遮光区域的周边部分中的半沉积部分。 通过照射脉冲激光，与原来存在于光掩模中的黑色（实心）缺陷部分一起除去遮光膜的偏离所需掩模图案的那些部分。 脉冲激光由染料激光器构成，而连续波激光由Ar激光器构成。 通过反射染料激光而透过其的Ar激光的特定半反射镜是可置换的。 白色和黑色缺陷选择性地集中在包括狭缝和聚光透镜的光学投影系统的相同光轴上，由此白色和黑色缺陷部分通过照射投射到狭缝中的相关激光而被去除 类似的光图像通过相同的光学投影系统。
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公开(公告)号：US4510222A
公开(公告)日：1985-04-09
申请号：US496245
申请日：1983-05-19
CPC分类号： G03F1/72 , G03F1/54 , Y10S430/139 , Y10S430/146
摘要： A photomask with white defects that have corrected with a film comprising a mixture of silver and tantalum oxide. The film has a good resistance to chemicals.
摘要翻译： 具有用包含银和氧化钽的混合物的膜校正的具有白色缺陷的光掩模。 这部电影对化学品有很好的抵抗力。
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公开(公告)号：US4566765A
公开(公告)日：1986-01-28
申请号：US541439
申请日：1983-10-13
IPC分类号： B23K26/00 , B23K26/06 , B23K26/073 , G02B27/09 , H01S3/10 , H01S3/101 , G02B5/08 , B23K9/00 , G01B11/26 , G02B27/14
CPC分类号： G02B27/0927 , B23K26/0604 , B23K26/0734 , G02B27/09 , G02B27/0905 , G02B27/0977
摘要： A light source apparatus comprises one laser oscillator, at least one other laser oscillator, a light converter for converting a laser beam emitted from the other laser oscillator into a ring-shaped laser beam, and a reflecting mirror for passing a laser light beam emitted from the one laser oscillator through the center hole of the mirror and for reflecting the ring-shaped laser beam from the other laser oscillator via the light converter, the laser beam reflected by the reflecting mirror being coaxial with and being overlapped with the laser beam transmitted through the mirror from the one laser oscillator.
摘要翻译： 光源装置包括一个激光振荡器，至少一个激光振荡器，用于将从另一个激光振荡器发射的激光束转换为环形激光束的光转换器，以及用于使从 一个激光振荡器通过反射镜的中心孔，并通过光转换器反射来自另一激光振荡器的环形激光束，由反射镜反射的激光束与传输的激光束同轴并与其重叠 一个激光振荡器的镜子。
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公开(公告)号：US4687939A
公开(公告)日：1987-08-18
申请号：US668843
申请日：1984-11-06
申请人： Tateoki Miyauchi , Hiroshi Yamaguchi , Mikio Hongo , Katsuro Mizukoshi , Akira Shimase , Ryohei Satoh
发明人： Tateoki Miyauchi , Hiroshi Yamaguchi , Mikio Hongo , Katsuro Mizukoshi , Akira Shimase , Ryohei Satoh
IPC分类号： C23C14/48 , C23C14/22 , H01J37/305 , H01J37/317 , H01J37/00
CPC分类号： H01J37/3056 , C23C14/221 , H01J37/3178 , H01J2237/31749
摘要： An ion beam apparatus which comprises an enclosure defining a chamber of high vacuum. A crucible for producing vapor of a material, ionizing means, ion accelerating means, and a substrate to be deposited with the vaporized material to thereby form a film thereon are disposed within the chamber. An accelerating voltage is applied across the crucible and the accelerating means such that the crucible is of positive polarity while the accelerating means is of negative polarity. The material contained in the crucible is vaporized by heating. A pressure difference is maintained between the vapor pressure within the crucible and the vacuum chamber. The crucible is provided with a small hole for ejecting the vapor of the material into the vacuum chamber to thereby form atom clouds referred to as clusters under adiabatic expansion and supercooling, a part of the clusters being ionized through irradiation of electrons by the ionizing means and accelerated by the accelerating means so that the ionized and accelerated clusters deposit on the substrate to form a thin film thereon. The apparatus further comprises electrostatic optical system interposed between the cluster ionizing region and the substrate to be deposited with the ionized clusters, wherein the electrostatic optical system serves to focus the ionized clusters onto the element to form the thin film thereon through deposition of the ionized clusters.
摘要翻译： 一种离子束装置，其包括限定高真空室的外壳。 用于产生材料的蒸气的坩埚，离子化装置，离子加速装置以及待蒸发的材料沉积以形成其上的膜的基板设置在室内。 在坩埚和加速装置之间施加加速电压，使得坩埚具有正极性，而加速装置是负极性的。 包含在坩埚中的材料通过加热而蒸发。 在坩埚内的蒸汽压力与真空室之间保持压力差。 该坩埚设置有用于将材料的蒸气喷射到真空室中的小孔，从而在绝热膨胀和过冷却下形成称为簇的原子云，通过电离装置照射电子而使部分簇离子化; 通过加速装置加速，使得电离和加速的团簇沉积在基底上以在其上形成薄膜。 该装置还包括插入群集电离区域和要沉积离子簇的基板之间的静电光学系统，其中静电光学系统用于将离子化的聚集体聚集到元件上以通过沉积离子簇而在其上形成薄膜 。
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公开(公告)号：US4581628A
公开(公告)日：1986-04-08
申请号：US424370
申请日：1982-09-27
申请人： Tateoki Miyauchi , Mikio Hongo , Masao Mitani , Isao Tanabe , Toshiaki Masuhara
发明人： Tateoki Miyauchi , Mikio Hongo , Masao Mitani , Isao Tanabe , Toshiaki Masuhara
IPC分类号： H01L21/3205 , H01L21/00 , H01L21/82 , H01L23/52 , H01L23/525 , H01L23/552 , H01L27/10 , H01L23/48 , H01L29/04
CPC分类号： H01L21/82 , H01L23/525 , H01L23/5254 , H01L23/552 , H01L2924/0002
摘要： The present invention consists in a semiconductor integrated circuit device characterized in that a circuit programming wiring layer is formed on an insulating film which is provided on a semiconductor substrate, and that a light shielding protective mask material is deposited around the circuit programming wiring layer except a program part thereof, through an insulating film.
摘要翻译： 本发明是一种半导体集成电路器件，其特征在于，在设置在半导体衬底上的绝缘膜上形成电路编程布线层，并且在电路编程布线层周围沉积遮光保护掩模材料，除了 程序部分，通过绝缘膜。
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公开(公告)号：US5497034A
公开(公告)日：1996-03-05
申请号：US318267
申请日：1994-10-05
申请人： Hiroshi Yamaguchi , Mikio Hongo , Tateoki Miyauchi , Akira Shimase , Satoshi Haraichi , Takahiko Takahashi , Keiya Saito
发明人： Hiroshi Yamaguchi , Mikio Hongo , Tateoki Miyauchi , Akira Shimase , Satoshi Haraichi , Takahiko Takahashi , Keiya Saito
IPC分类号： B21C27/00 , H01L21/00 , H01L21/3205 , H01L21/44 , H01L21/768 , H01L23/48 , H01L23/52 , H05K3/00 , H05K3/40 , H01L29/46
CPC分类号： H01L21/76879 , H01J37/3056 , H01L21/32051 , H01L21/67138 , H01L21/76892 , H05K3/0017 , H05K3/4076 , Y10S428/901 , Y10S438/94 , Y10S438/961 , Y10T428/12361 , Y10T428/31678
摘要： An IC wiring connecting method for interconnecting conductive lines of the same wiring plane of an IC chip for correcting the wiring, for interconnecting conductive lines of different wiring lanes of a multilayer IC chip at the same position, or for connecting a conductive line of a lower wiring plane of a multilayer IC chip to a conductive line formed at a separate position on the same multilayer IC chip. The insulating film or films covering conductive lines to be interconnected are processed by an energy beam such as a concentrated ion beam to form holes so as to expose the respective parts of the conductive lines where the conductive lines are to be interconnected, then a metal is deposited over the surfaces of the holes and an area interconnecting the holes by irradiating the surfaces of the holes and the area by an energy beam or a concentrated ion beam in an atmosphere of a gaseous organic metal compound to form a conductive metal film electrically interconnecting the conductive lines. Also provided is an apparatus for carrying out the IC wiring connecting method, which comprises, as essential components, an ion beam material processing system, an insulating film forming system such as a laser induced CVD unit, a conductive film forming system, and an insulating film etching system.
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公开(公告)号：US5229569A
公开(公告)日：1993-07-20
申请号：US707608
申请日：1991-05-30
申请人： Tateoki Miyauchi , Shigenobu Maruyama , Katsurou Mizukoshi , Mikio Hongo , Koyo Morita , Kaoru Katayama , Minoru Suzuki , Kazuo Mera , Haruhisa Sakamoto
发明人： Tateoki Miyauchi , Shigenobu Maruyama , Katsurou Mizukoshi , Mikio Hongo , Koyo Morita , Kaoru Katayama , Minoru Suzuki , Kazuo Mera , Haruhisa Sakamoto
IPC分类号： B23K26/03
CPC分类号： B23K26/032
摘要： A laser machining apparatus includes a laser beam source, such as of excimer laser, which produces a laser beam to be projected on a work piece or a sample, first and second illumination light sources which have wavelengths substantially equal to the wavelength of the laser beam and illuminate the entire image and the laser beam, respectively, a first beam splitter which guides the image produced by the illumination light to an observation unit, a second beam splitter which guides the laser beam from the laser beam source to an objective lens, and a controller which controls the machining condition including the relative positioning between the sample and the laser beam depending on the result of observation. The laser beam guide path structure from the laser beam source to the sample has its interior wall made of laser-transparent material such as glass, and the transparent material is enclosed by a laser blocking material such as a metal or water.
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公开(公告)号：US5824598A
公开(公告)日：1998-10-20
申请号：US561310
申请日：1995-11-21
申请人： Hiroshi Yamaguchi , Mikio Hongo , Tateoki Miyauchi , Akira Shimase , Satoshi Haraichi , Takahiko Takahashi , Keiya Saito
发明人： Hiroshi Yamaguchi , Mikio Hongo , Tateoki Miyauchi , Akira Shimase , Satoshi Haraichi , Takahiko Takahashi , Keiya Saito
IPC分类号： B21C27/00 , H01L21/00 , H01L21/3205 , H01L21/44 , H01L21/768 , H01L23/48 , H01L23/52 , H05K3/00 , H05K3/40
CPC分类号： H01L21/76879 , H01J37/3056 , H01L21/32051 , H01L21/67138 , H01L21/76892 , H05K3/0017 , H05K3/4076 , Y10S428/901 , Y10S438/94 , Y10S438/961 , Y10T428/12361 , Y10T428/31678
摘要： An IC wiring connecting method for interconnecting conductive lines of the same wiring plane of an IC chip for correcting the wiring, for interconnecting conductive lines of different wiring lanes of a multilayer IC chip at the same position, or for connecting a conductive line of a lower wiring plane of a multilayer IC chip to a conductive line formed at a separate position on the same multilayer IC chip. The insulating film or films covering conductive lines to be interconnected are processed by an energy beam such as a concentrated ion beam to form holes so as to expose the respective parts of the conductive lines where the conductive lines are to be interconnected, then a metal is deposited over the surfaces of the holes and an area interconnecting the holes by irradiating the surfaces of the holes and the area by an energy beam or a concentrated ion beam in an atmosphere of a gaseous organic metal compound to form a conductive metal film electrically interconnecting the conductive lines. Also provided is an apparatus for carrying out the IC wiring connecting method, which comprises, as essential components, an ion beam material processing system, an insulating film forming system such as a laser induced CVD unit, a conductive film forming system, and an insulating film etching system.
摘要翻译： 一种用于互连用于校正布线的IC芯片的相同布线面的导线的IC布线连接方法，用于将相同位置处的多层IC芯片的不同布线通道的导线相互连接，或用于连接下层导体线 多层IC芯片的布线平面形成在同一多层IC芯片上的分离位置上的导线。 覆盖要互连的导电线的绝缘膜或膜由诸如浓缩离子束的能量束进行处理，以形成孔，以便露出导线与互连的相应部分，然后金属为 通过在气态有机金属化合物的气氛中通过能量束或浓缩离子束照射孔和区域的表面而在孔的表面上沉积的区域和互连孔的区域，以形成将导电金属膜电连接 导线。 还提供了一种用于执行IC布线连接方法的装置，其包括作为主要组成部分的离子束材料处理系统，诸如激光诱导CVD单元的绝缘膜形成系统，导电膜形成系统和绝缘体 电影蚀刻系统。
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公开(公告)号：US5472507A
公开(公告)日：1995-12-05
申请号：US238888
申请日：1994-05-06
申请人： Hiroshi Yamaguchi , Mikio Hongo , Tateoki Miyauchi , Akira Shimase , Satoshi Haraichi , Takahiko Takahashi , Keiya Saito
发明人： Hiroshi Yamaguchi , Mikio Hongo , Tateoki Miyauchi , Akira Shimase , Satoshi Haraichi , Takahiko Takahashi , Keiya Saito
IPC分类号： B21C27/00 , H01L21/00 , H01L21/3205 , H01L21/44 , H01L21/768 , H01L23/48 , H01L23/52 , H05K3/00 , H05K3/40 , C23C16/00
CPC分类号： H01L21/76879 , H01J37/3056 , H01L21/32051 , H01L21/67138 , H01L21/76892 , H05K3/0017 , H05K3/4076 , Y10S428/901 , Y10S438/94 , Y10S438/961 , Y10T428/12361 , Y10T428/31678
摘要： An IC wiring connecting method for interconnecting conductive lines of the same wiring plane of an IC chip for correcting the wiring, for interconnecting conductive lines of different wiring lanes of a multilayer IC chip at the same position, or for connecting a conductive line of a lower wiring plane of a multilayer IC chip to a conductive line formed at a separate position on the same multilayer IC chip. The insulating film or films covering conductive lines to be interconnected are processed by an energy beam such as a concentrated ion beam to form holes so as to expose the respective parts of the conductive lines where the conductive lines are to be interconnected, then a metal is deposited over the surfaces of the holes and an area interconnecting the holes by irradiating the surfaces of the holes and the area by an energy beam or a concentrated ion beam in an atmosphere of a gaseous organic metal compound to form a conductive metal film electrically interconnecting the conductive lines. Also provided is an apparatus for carrying out the IC wiring connecting method, which comprises, as essential components, an ion beam material processing system, an insulating film forming system such as a laser induced CVD unit, a conductive film forming system, and an insulating film etching system.
摘要翻译： 一种用于互连用于校正布线的IC芯片的相同布线面的导线的IC布线连接方法，用于将相同位置处的多层IC芯片的不同布线通道的导线相互连接，或用于连接下层导体线 多层IC芯片的布线平面形成在同一多层IC芯片上的分离位置上的导线。 覆盖要互连的导电线的绝缘膜或膜由诸如浓缩离子束的能量束进行处理，以形成孔，以便露出导线与互连的相应部分，然后金属为 通过在气态有机金属化合物的气氛中通过能量束或浓缩离子束照射孔和区域的表面而在孔的表面上沉积的区域和互连孔的区域，以形成将导电金属膜电连接 导线。 还提供了一种用于执行IC布线连接方法的装置，其包括作为主要组成部分的离子束材料处理系统，诸如激光诱导CVD单元的绝缘膜形成系统，导电膜形成系统和绝缘体 电影蚀刻系统。
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