公开(公告)号：US20060003478A1

公开(公告)日：2006-01-05

申请号：US11209742

申请日：2005-08-24

申请人： Mikio Hongo ,  Sachio Uto ,  Mineo Nomoto ,  Toshihiko Nakata ,  Mutsuko Hatano ,  Shinya Yamaguchi ,  Nakoto Ohkura

发明人： Mikio Hongo ,  Sachio Uto ,  Mineo Nomoto ,  Toshihiko Nakata ,  Mutsuko Hatano ,  Shinya Yamaguchi ,  Nakoto Ohkura

IPC分类号： H01L21/00

CPC分类号： H01L29/04 ,  B23K26/0622 ,  B23K26/064 ,  B23K26/0648 ,  B23K26/066 ,  B23K26/0665 ,  B23K26/0732 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/02683 ,  H01L21/268 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/78675

摘要： Arrangements (e.g., methods) for manufacturing a display device, including irradiating an amorphous semiconductor film formed on a substrate with an excimer laser beam to convert the amorphous semiconductor film into a polycrystalline semiconductor film; and irradiating predetermined areas of the polycrystalline semiconductor film intermittently with a continuous wave laser beam while a position of the substrate with respect to the continuous wave laser beam is scanned, crystal grains larger than those of the polycrystalline semiconductor film other than the predetermined areas are formed in each of the predetermined areas locally in the polycrystalline semiconductor film, wherein first thin film transistors are formed in the predetermined areas while second thin film transistors are formed in the polycrystalline semiconductor film other than the predetermined areas thereof.

摘要翻译： 包括用于制造显示装置的布置（例如，方法），包括用准分子激光束照射形成在衬底上的非晶半导体膜，以将非晶半导体膜转换为多晶半导体膜; 并且在扫描基板相对于连续波激光束的位置时，用连续波激光束间歇地照射多晶半导体膜的预定区域，形成比除了预定区域以外的多晶半导体膜的晶粒大的晶粒 在多晶半导体膜中局部的每个预定区域中，其中第一薄膜晶体管形成在预定区域中，而第二薄膜晶体管形成在除了其预定区域之外的多晶半导体膜中。

公开(公告)号：US20070041410A1

公开(公告)日：2007-02-22

申请号：US11588387

申请日：2006-10-27

申请人： Mikio Hongo ,  Sachio Uto ,  Mineo Nomoto ,  Toshihiko Nakata ,  Mutsuko Hatano ,  Shinya Yamaguchi ,  Makoto Ohkura

发明人： Mikio Hongo ,  Sachio Uto ,  Mineo Nomoto ,  Toshihiko Nakata ,  Mutsuko Hatano ,  Shinya Yamaguchi ,  Makoto Ohkura

IPC分类号： H01S3/10 ,  G02B27/10

CPC分类号： H01L21/02683 ,  H01L21/0268 ,  H01L21/02691 ,  H01L21/2026 ,  H01L21/268 ,  H01L27/1285 ,  H01L29/04 ,  H01L29/66757

摘要： Apparatus for fabricating a display device includes a stage capable of mounting an insulating substrate of the display device and moving the insulating substrate, linear scales which detect a position or moving distance of the substrate, a laser oscillator which generates continuous-waves laser light, a modulator which turns ON/OFF the continuous-wave laser light, a beam forming optic which shapes the continuous-wave laser light passing through the modulator into a linear or rectangular form, an objective lens which projects the at least one of the laser light on the insulating substrate so as to irradiate the insulating substrate with the laser light. The controller counts signals generated by the linear scales for every movement of the stage for a given distance, causes the modulator to turn the generated continuous-wave laser light in an ON state at time when a position of the insulating substrate on which the laser light irradiation is to be started reaches an area on which the laser light is projected, and causes the modulator to turn the generated continuous-wave laser light in an OFF state at another time.

摘要翻译： 用于制造显示装置的装置包括能够安装显示装置的绝缘基板并移动绝缘基板的台，检测基板的位置或移动距离的线性标尺，产生连续波激光的激光振荡器， 将连续波激光切换为ON / OFF的调制器，将通过调制器的连续波激光成形为直线或矩形的光束形成光学器件，将至少一个激光投射到的物镜 绝缘基板，以激光照射绝缘基板。 控制器对于给定距离的级的每次移动来对由线性标尺产生的信号进行计数，使得调制器将产生的连续波激光在其上的激光的绝缘基板的位置处于接通状态 照射开始到达投射激光的区域，并且使得调制器在另一时间将所产生的连续波激光转为OFF状态。

公开(公告)号：US07834353B2

公开(公告)日：2010-11-16

申请号：US12021714

申请日：2008-01-29

申请人： Mikio Hongo ,  Sachio Uto ,  Mineo Nomoto ,  Toshihiko Nakata ,  Mutsuko Hatano ,  Shinya Yamaguchi ,  Makoto Ohkura

发明人： Mikio Hongo ,  Sachio Uto ,  Mineo Nomoto ,  Toshihiko Nakata ,  Mutsuko Hatano ,  Shinya Yamaguchi ,  Makoto Ohkura

IPC分类号： H01L31/0376 ,  H01L21/00

CPC分类号： H01L29/04 ,  B23K26/0622 ,  B23K26/064 ,  B23K26/0648 ,  B23K26/066 ,  B23K26/0665 ,  B23K26/0732 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/02683 ,  H01L21/268 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/78675

摘要： A TFT device having a pixel portion and a driving circuit portion formed on a glass substrate; wherein at least the active layer (active region) of a transistor constituting said driving circuit comprises polycrystalline silicon including crystals that do not have crystal grain boundaries which cross the direction of current flow.

摘要翻译： 一种具有形成在玻璃基板上的像素部分和驱动电路部分的TFT器件; 其中构成所述驱动电路的晶体管的至少有源层（有源区）包括多晶硅，其包括不具有与电流流动方向交叉的晶界的晶体。

公开(公告)号：US07326623B2

公开(公告)日：2008-02-05

申请号：US11209742

申请日：2005-08-24

申请人： Mikio Hongo ,  Sachio Uto ,  Mineo Nomoto ,  Toshihiko Nakata ,  Mutsuko Hatano ,  Shinya Yamaguchi ,  Makoto Ohkura

发明人： Mikio Hongo ,  Sachio Uto ,  Mineo Nomoto ,  Toshihiko Nakata ,  Mutsuko Hatano ,  Shinya Yamaguchi ,  Makoto Ohkura

IPC分类号： H01L21/336 ,  H01L23/58

CPC分类号： H01L29/04 ,  B23K26/0622 ,  B23K26/064 ,  B23K26/0648 ,  B23K26/066 ,  B23K26/0665 ,  B23K26/0732 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/02683 ,  H01L21/268 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/78675

摘要： Arrangements (e.g., methods) for manufacturing a display device, including irradiating an amorphous semiconductor film formed on a substrate with an excimer laser beam to convert the amorphous semiconductor film into a polycrystalline semiconductor film; and irradiating predetermined areas of the polycrystalline semiconductor film intermittently with a continuous wave laser beam while a position of the substrate with respect to the continuous wave laser beam is scanned, crystal grains larger than those of the polycrystalline semiconductor film other than the predetermined areas are formed in each of the predetermined areas locally in the polycrystalline semiconductor film, wherein first thin film transistors are formed in the predetermined areas while second thin film transistors are formed in the polycrystalline semiconductor film other than the predetermined areas thereof.

摘要翻译： 包括用于制造显示装置的布置（例如，方法），包括用准分子激光束照射形成在衬底上的非晶半导体膜，以将非晶半导体膜转换为多晶半导体膜; 并且在扫描基板相对于连续波激光束的位置时，用连续波激光束间歇地照射多晶半导体膜的预定区域，形成比除了预定区域以外的多晶半导体膜的晶粒大的晶粒 在多晶半导体膜中局部的每个预定区域中，其中第一薄膜晶体管形成在预定区域中，而第二薄膜晶体管形成在除了其预定区域之外的多晶半导体膜中。

公开(公告)号：US07129124B2

公开(公告)日：2006-10-31

申请号：US10628421

申请日：2003-07-29

申请人： Mikio Hongo ,  Sachio Uto ,  Mineo Nomoto ,  Toshihiko Nakata ,  Mutsuko Hatano ,  Shinya Yamaguchi ,  Makoto Ohkura

发明人： Mikio Hongo ,  Sachio Uto ,  Mineo Nomoto ,  Toshihiko Nakata ,  Mutsuko Hatano ,  Shinya Yamaguchi ,  Makoto Ohkura

IPC分类号： H01L21/00 ,  H01I21/26

CPC分类号： H01L21/02683 ,  H01L21/0268 ,  H01L21/02691 ,  H01L21/2026 ,  H01L21/268 ,  H01L27/1285 ,  H01L29/04 ,  H01L29/66757

摘要： The active layer (active region) of the thin-film transistor making up the driver circuit is obtained by reformation implemented by scanning the continuous-wave laser light, condensed into a linear form or a rectangle form extremely longer in the longitudinal direction than in the transverse direction, along a given direction crossing the longitudinal direction. This is made up of a poly silicon film containing crystal grains having no grain boundaries crossing the direction of current flow, that is, a band-like polycrystalline silicon film. As a result, it is possible to implement a display device having stable and high quality active elements outside the display region on the insulating substrate.

摘要翻译： 构成驱动电路的薄膜晶体管的有源层（有源区）是通过扫描连续波激光而获得的，该连续波激光在纵向方向上比在 横向，沿着与纵向相交的给定方向。 这是由含有晶界与电流流动相交的晶粒的多晶硅膜，即带状多晶硅膜构成的。 结果，可以实现在绝缘基板上的显示区域之外具有稳定且高质量的有源元件的显示装置。

公开(公告)号：US06943086B2

公开(公告)日：2005-09-13

申请号：US10267680

申请日：2002-10-10

申请人： Mikio Hongo ,  Sachio Uto ,  Mineo Nomoto ,  Toshihiko Nakata ,  Mutsuko Hatano ,  Shinya Yamaguchi ,  Makoto Ohkura

发明人： Mikio Hongo ,  Sachio Uto ,  Mineo Nomoto ,  Toshihiko Nakata ,  Mutsuko Hatano ,  Shinya Yamaguchi ,  Makoto Ohkura

IPC分类号： G02F1/1368 ,  B23K26/06 ,  B23K26/073 ,  G09F9/30 ,  H01L21/20 ,  H01L21/26 ,  H01L21/268 ,  H01L21/324 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/04 ,  H01L29/786 ,  H01S3/00 ,  B66C21/00

CPC分类号： H01L29/04 ,  B23K26/0622 ,  B23K26/064 ,  B23K26/0648 ,  B23K26/066 ,  B23K26/0665 ,  B23K26/0732 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/02683 ,  H01L21/268 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/78675

摘要： A laser beam is concentrated using an objective lens and radiated on a amorphous silicon film or polycrystalline silicon film having a grain size of one micron or less, the laser beam being processed from a continuous wave laser beam (1) to be pulsed using an EO modulator and to have arbitrary temporal energy change while pulsing ; (2) to have an arbitrary spatial energy distribution using a beam-homogenizer, filter having an arbitrary transmittance distribution, and rectangular slit; and (3) to eliminate coherency thereof using a high-speed rotating diffuser. In this manner, it is possible to realize a liquid crystal display device in which a driving circuit comprising a polycrystalline silicon film having substantially the same properties as a single crystal is incorporated in a TFT panel device.

摘要翻译： 使用物镜将激光束集中并照射在具有1微米或更小的晶粒尺寸的非晶硅膜或多晶硅膜上，激光束从连续波激光束（1）处理以使用EO脉冲 并且在脉冲时具有任意的时间能量变化; （2）使用束均化器，具有任意透射率分布的滤光器和矩形狭缝具有任意的空间能量分布; 和（3）消除使用高速旋转扩散器的相干性。 以这种方式，可以实现一种液晶显示装置，其中包括具有与单晶基本上相同性质的多晶硅膜的驱动电路并入TFT面板装置中。

公开(公告)号：US20050214959A1

公开(公告)日：2005-09-29

申请号：US11030065

申请日：2005-01-07

申请人： Mutsuko Hatano ,  Shinya Yamaguchi ,  Mikio Hongo ,  Akio Yazaki ,  Takeshi Noda

发明人： Mutsuko Hatano ,  Shinya Yamaguchi ,  Mikio Hongo ,  Akio Yazaki ,  Takeshi Noda

IPC分类号： G02F1/1368 ,  H01L21/20 ,  H01L21/336 ,  H01L21/66 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786

CPC分类号： H01L21/02683 ,  H01L21/0268 ,  H01L21/02691 ,  H01L21/2026 ,  H01L22/12 ,  H01L27/1214 ,  H01L27/1285 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of forming a semiconductor thin film. includes a highly sensitive inspection method for detecting lateral crystals and a crystallizing method. In the crystallizing method, the time-based pulse width of a laser SXL is modulated and an approximate band-like crystal silicon film SPSI is formed in a desired region while scanning the substrate SUB1 bidirectionally in the X and −X directions. In the inspection method, an inspection beam PRO1 is irradiated to the substrate just after the laser SXL is turned off. A protrusion TOKI will be formed on the silicon film portion where the laser SXL is turned off if the state of the silicon film is that of a lateral crystal SPSI. The inspection beam PRO1 is scattered by the protrusion TOKI and observed by a detector. If the state of the silicon film is granular crystal GGSI or aggregated film AGSI, such a protrusion TOKI is not observed.

摘要翻译： 一种形成半导体薄膜的方法。 包括用于检测横向晶体的高灵敏度检查方法和结晶方法。 在结晶方法中，激光SXL的时间脉冲宽度被调制，并且在X和-X方向双向扫描衬底SUB 1的同时，在所需区域中形成近似带状晶体硅膜SPSI。 在检查方法中，在激光SXL关闭之后，将检查光束PRO 1照射到基板。 如果硅膜的状态是横向晶体SPSI的状态，则在硅膜部分上形成突起TOKI，其中激光SXL截止。 检测光束PRO 1由突出部TOKI散射并由检测器观测。 如果硅膜的状态是粒状晶体GGSI或聚集膜AGSI，则不观察到这样的突起TOKI。

公开(公告)号：US07981701B2

公开(公告)日：2011-07-19

申请号：US11030065

申请日：2005-01-07

申请人： Mutsuko Hatano ,  Shinya Yamaguchi ,  Mikio Hongo ,  Akio Yazaki ,  Takeshi Noda

发明人： Mutsuko Hatano ,  Shinya Yamaguchi ,  Mikio Hongo ,  Akio Yazaki ,  Takeshi Noda

IPC分类号： H01L21/00

CPC分类号： H01L21/02683 ,  H01L21/0268 ,  H01L21/02691 ,  H01L21/2026 ,  H01L22/12 ,  H01L27/1214 ,  H01L27/1285 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of forming a semiconductor thin film includes a highly sensitive inspection method for detecting lateral crystals and a crystallizing method. In the crystallizing method, the time-based pulse width of a laser SXL is modulated and an approximate band-like crystal silicon film SPSI is formed in a desired region while scanning the substrate SUB1 bidirectionally in the X and −X directions. In the inspection method, an inspection beam PRO1 is irradiated to the substrate just after the laser SXL is turned off. A protrusion TOKI will be formed on the silicon film portion where the laser SXL is turned off if the state of the silicon film is that of a lateral crystal SPSI. The inspection beam PRO1 is scattered by the protrusion TOKI and observed by a detector. If the state of the silicon film is granular crystal GGSI or aggregated film AGSI, such a protrusion TOKI is not observed.

摘要翻译： 形成半导体薄膜的方法包括用于检测横向晶体的高灵敏度检测方法和结晶方法。 在结晶方法中，激光SXL的基于时间的脉冲宽度被调制，并且在X和-X方向双向扫描衬底SUB1的同时，在所需区域中形成近似带状晶体硅膜SPSI。 在检查方法中，在激光SXL关闭之后，将检查光束PRO1照射到基板。 如果硅膜的状态是横向晶体SPSI的状态，则在硅膜部分上形成突起TOKI，其中激光SXL截止。 检测光束PRO1由突出部TOKI散射并由检测器观测。 如果硅膜的状态是粒状晶体GGSI或聚集膜AGSI，则不观察到这样的突起TOKI。

公开(公告)号：US07397831B2

公开(公告)日：2008-07-08

申请号：US10986936

申请日：2004-11-15

申请人： Mikio Hongo ,  Akio Yazaki ,  Mutsuko Hatano

发明人： Mikio Hongo ,  Akio Yazaki ,  Mutsuko Hatano

IPC分类号： H01S3/00

CPC分类号： B23K26/0738 ,  B23K26/0853 ,  G02B27/0927 ,  G02B27/0966 ,  H01L21/02678 ,  H01L21/02683 ,  H01L21/02691 ,  H01L21/2026 ,  H01L27/1285 ,  H01L27/1296

摘要： A laser beam temporally modulated in amplitude by a modulator and shaped into a long and narrow shape by a beam shaper is rotated around the optical axis of an image rotator inserted between the beam shaper and a substrate. Thus, the longitudinal direction of the laser beam having the long and narrow shape is rotated around the optical axis on the substrate. In order to perform annealing in a plurality of directions on the substrate, the laser beam shaped into the long and narrow shape is rotated on the substrate while a stage mounted with the substrate is moved only in two directions, that is, X- and Y-directions.In such a manner, the substrate can be scanned at a high speed with a continuous wave laser beam modulated temporally in amplitude and shaped into a long and narrow shape, without rotating the substrate. Thus, a semiconductor film can be annealed.

摘要翻译： 通过调制器暂时调制振幅的激光束并通过光束整形器成形为长而窄的形状围绕插入在光束整形器和基板之间的图像旋转器的光轴旋转。 因此，具有长而窄形状的激光束的纵向方向围绕基板上的光轴旋转。 为了在基板上沿多个方向进行退火，将形成为长而窄的形状的激光束在基板上旋转，而安装有基板的台仅沿两个方向移动，即，X轴和Y轴 方向 以这样一种方式，可以用波长时间上调制并成形为长而窄的连续波激光束高速扫描基板，而不旋转基板。 因此，半导体膜可以退火。

公开(公告)号：US20050169330A1

公开(公告)日：2005-08-04

申请号：US10987003

申请日：2004-11-15

申请人： Mikio Hongo ,  Akio Yazaki ,  Mutsuko Hatano ,  Takeshi Noda ,  Yukio Takasaki

发明人： Mikio Hongo ,  Akio Yazaki ,  Mutsuko Hatano ,  Takeshi Noda ,  Yukio Takasaki

IPC分类号： H01L21/324 ,  B23K26/073 ,  C30B13/24 ,  C30B29/06 ,  H01L21/20 ,  H01L21/268 ,  H01L29/04 ,  H01L29/786 ,  H01S3/00 ,  H01L21/00 ,  H01L21/84 ,  H01L21/76 ,  C30B1/00 ,  H01L21/36

CPC分类号： H01L21/02691 ,  B23K26/0738 ,  C30B13/24 ,  C30B29/06 ,  H01L21/02678 ,  H01L21/02683 ,  H01L21/2026 ,  H01L29/04 ,  H01L29/78675

摘要： When a laser bean temporally modulated in amplitude by a modulator is shaped into a long and narrow beam by a beam shaper, the scanning-direction size of the long and narrow beam shaped by the beam shaper is selected to be in a range of from 2 to 10 microns, preferably in a range of from 2 to 4 microns and the scanning speed of the beam is selected to be in a range of from 300 to 1000 mm/s, preferably in a range of from 500 to 1000 m/s. As a result, damage of the silicon thin film can be suppressed while energy utilizing efficiency of the laser beam can be improved. Accordingly, laterally grown crystals (belt-like crystals) improved in throughput can be obtained on a required region of a substrate scanned and irradiated with the laser beam.

摘要翻译： 当通过调制器在振幅时间上调制的激光束通过光束整形器成形为长而窄的光束时，由光束整形器成形的长而窄的光束的扫描方向尺寸被选择在2 至10微米，优选在2至4微米的范围内，并且光束的扫描速度选择在300至1000mm / s的范围内，优选在500至1000m / s的范围内。 结果，可以抑制硅薄膜的损伤，同时提高激光束的能量利用效率。 因此，可以在扫描并照射激光束的基板的所需区域上获得提高生产量的横向生长的晶体（带状晶体）。