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公开(公告)号：US4041437A
公开(公告)日：1977-08-09
申请号：US644414
申请日：1975-12-24
CPC分类号： G01N27/121 , G01N27/12 , Y10S252/963
摘要： This invention provides a humidity sensor having a negative coefficient of resistivity for relative humidity, which comprises 99.99 to 10 mole percent of iron oxide (Fe.sub.2 O.sub.3) and 0.01 to 90 mole percent of at least one member selected from alkali metal oxides, which are lithium oxide (Li.sub.2 O), sodium oxide (Na.sub.2 O), potassium oxide (K.sub.2 O) and cesium oxide (Cs.sub.2 O). The amount of the alkali metal oxide in the sensor is preferably 0.01 to 25 mole percent. This sensor is advantageous because it can accurately detect the changes in humidity and it has a long, stable life.
摘要翻译： 本发明提供了一种湿度传感器，其具有相对湿度的负电阻系数，其包含99.99至10摩尔％的氧化铁（Fe 2 O 3）和0.01至90摩尔％的选自碱金属氧化物中的至少一种，其为氧化锂 （Li 2 O），氧化钠（Na 2 O），氧化钾（K 2 O）和氧化铯（Cs 2 O）。 传感器中的碱金属氧化物的量优选为0.01〜25摩尔％。 该传感器是有利的，因为它可以准确地检测湿度变化，并且寿命长。
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公开(公告)号：US20130280896A1
公开(公告)日：2013-10-24
申请号：US13824383
申请日：2011-09-21
CPC分类号： H01L21/67011 , C01B33/033 , H01L21/02532
摘要： To provide an apparatus for producing polycrystalline silicon and a method therefor to allow improvement in efficiency of polycrystalline silicon production by minimizing reactor downtime and to allow polycrystalline silicon production at a relatively low cost and in a large amount in a zinc reduction process for recovering formed silicon in a solid state. In a silicon producing apparatus for producing polycrystalline silicon by reducing silicon tetrachloride with zinc, vertical reactor 1 has reactor upper body 2 and reactor lower body 3 that can be vertically detached, and reactor lower body 3 is movable in up-and-down and left-right directions.
摘要翻译： 提供一种用于制造多晶硅的装置及其方法，以通过最小化反应堆停机时间来提高多晶硅生产的效率，并允许以相对较低的成本和大量的锌还原工艺来回收成形硅 处于固体状态。 在通过用锌还原四氯化硅制造多晶硅的硅制造装置中，垂直反应器1具有能够垂直分离的反应器上体2和反应器下体3，反应器下体3上下左右移动 右方向
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3.发明申请公开(公告)号：US20110165032A1
公开(公告)日：2011-07-07
申请号：US13013270
申请日：2011-01-25
IPC分类号： B01J19/00
CPC分类号： C23C16/24 , B01J4/002 , B01J19/2415 , B01J2219/00135 , B01J2219/00159 , B01J2219/185 , C01B33/03 , Y10T117/10
摘要： In the production process of the present invention for high purity polycrystal silicon, using a vertical reactor having a silicon chloride gas-feeding nozzle and a reducing agent gas-feeding nozzle which are disposed at an upper part and a waste gas discharge pipe, a silicon chloride gas and a reducing agent gas are fed into the reactor to form polycrystal silicon at a tip part of the silicon chloride gas-feeding nozzle by the reaction of the silicon chloride gas with the reducing agent gas, and the polycrystal silicon is allowed to grow from the tip part of the silicon chloride gas-feeding nozzle toward a lower part thereof.
摘要翻译： 在本发明的高纯度多晶硅的制造方法中，使用具有设置在上部的氯化硅气体供给喷嘴和还原剂气体供给喷嘴的立式反应器和废气排出管， 氯化物气体和还原剂气体通过氯化硅气体与还原剂气体的反应而供入到反应器中以在氯化硅气体供给喷嘴的尖端处形成多晶硅，并使多晶硅生长 从氯化硅气体供给喷嘴的前端朝向其下部。
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4.发明授权公开(公告)号：US08287645B2
公开(公告)日：2012-10-16
申请号：US13013270
申请日：2011-01-25
IPC分类号： C30B25/14
CPC分类号： C23C16/24 , B01J4/002 , B01J19/2415 , B01J2219/00135 , B01J2219/00159 , B01J2219/185 , C01B33/03 , Y10T117/10
摘要： In the production process of the present invention for high purity polycrystal silicon, using a vertical reactor having a silicon chloride gas-feeding nozzle and a reducing agent gas-feeding nozzle which are disposed at an upper part and a waste gas discharge pipe, a silicon chloride gas and a reducing agent gas are fed into the reactor to form polycrystal silicon at a tip part of the silicon chloride gas-feeding nozzle by the reaction of the silicon chloride gas with the reducing agent gas, and the polycrystal silicon is allowed to grow from the tip part of the silicon chloride gas-feeding nozzle toward a lower part thereof.
摘要翻译： 在本发明的高纯度多晶硅的制造方法中，使用具有设置在上部的氯化硅气体供给喷嘴和还原剂气体供给喷嘴的立式反应器和废气排出管， 氯化物气体和还原剂气体通过氯化硅气体与还原剂气体的反应而供入到反应器中以在氯化硅气体供给喷嘴的尖端处形成多晶硅，并且允许多晶硅生长 从氯化硅气体供给喷嘴的前端朝向其下部。
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5.发明授权公开(公告)号：US07922814B2
公开(公告)日：2011-04-12
申请号：US11556524
申请日：2006-11-03
IPC分类号： C30B21/02
CPC分类号： C23C16/24 , B01J4/002 , B01J19/2415 , B01J2219/00135 , B01J2219/00159 , B01J2219/185 , C01B33/03 , Y10T117/10
摘要： In the production process of the present invention for high purity polycrystal silicon, using a vertical reactor having a silicon chloride gas-feeding nozzle and a reducing agent gas-feeding nozzle which are disposed at an upper part and a waste gas discharge pipe, a silicon chloride gas and a reducing agent gas are fed into the reactor to form polycrystal silicon at a tip part of the silicon chloride gas-feeding nozzle by the reaction of the silicon chloride gas with the reducing agent gas, and the polycrystal silicon is allowed to grow from the tip part of the silicon chloride gas-feeding nozzle toward a lower part thereof.
摘要翻译： 在本发明的高纯度多晶硅的制造方法中，使用具有设置在上部的氯化硅气体供给喷嘴和还原剂气体供给喷嘴的立式反应器和废气排出管， 氯化物气体和还原剂气体通过氯化硅气体与还原剂气体的反应而供入到反应器中以在氯化硅气体供给喷嘴的尖端处形成多晶硅，并使多晶硅生长 从氯化硅气体供给喷嘴的前端朝向其下部。
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公开(公告)号：US08074695B2
公开(公告)日：2011-12-13
申请号：US12598821
申请日：2008-05-07
IPC分类号： B32B15/00
CPC分类号： B65H37/007 , B65H2701/19402 , Y10T156/1705
摘要： An adhesive transfer device can reliably transfer by simple operation an adhesive onto a transfer target surface by either of spot-like transfer and linear transfer that are alternately selected. The adhesive transfer device has a supply reel (20) around which a transfer tape (1) having a backing material (2) provided with an adhesive (3) on one surface thereof is wound, a take-up reel (30) for taking up the transfer tape, and a transfer head (40) for transferring the adhesive onto the transfer target surface. The transfer head is pivotally supported at one end thereof and includes a first transfer section (45a) formed at a free end portion thereof and having a circular arc-shaped contact surface for mutual contact with the transfer target surface, a second transfer section (45b) having a flat transfer surface (45c) between the first transfer section and a pivot portion of the transfer head, and a spring member (46) for urging the free end portion of the transfer head toward the transfer target surface. Pressing the second transfer section onto the transfer target surface against the resilience of the spring member performs spot-like transfer of the adhesive onto the transfer target surface. Linear transfer of the adhesive onto the transfer target surface is performed by moving the first transfer section with the first transfer section pressed to the transfer target surface by the resilience of the spring member.
摘要翻译： 粘合剂转移装置可以通过交替选择的点状转印和线性转印中的任一个通过简单的操作将粘合剂可靠地转印到转印目标表面上。 粘合剂输送装置具有供给卷轴（20），卷绕有在其一个表面上设置有粘合剂（3）的背衬材料（2）的转移带（1），卷取卷取机（30） 以及用于将粘合剂转印到转印目标表面上的转印头（40）。 传送头在其一端枢转地支撑，并且包括形成在其自由端部处并具有与转印目标表面相互接触的圆弧形接触表面的第一传送部分（45a），第二传送部分（45b） ），在第一转印部分和转印头的枢转部分之间具有平坦的转印表面（45c），以及用于将转印头的自由端部朝向转印目标表面推压的弹簧部件（46）。 克服弹簧部件的弹性将第二转印部压在转印目标表面上，将粘合剂进行点状转印到转印目标表面上。 粘合剂在转印目标表面上的线性转移是通过使第一转印部分通过弹簧构件的弹性将第一转印部分按压到转印目标表面来进行的。
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公开(公告)号：US20100084095A1
公开(公告)日：2010-04-08
申请号：US12598821
申请日：2008-05-07
CPC分类号： B65H37/007 , B65H2701/19402 , Y10T156/1705
摘要： An adhesive transfer device can reliably transfer by simple operation an adhesive onto a transfer target surface by either of spot-like transfer and linear transfer that are alternately selected. The adhesive transfer device has a supply reel (20) around which a transfer tape (1) having a backing material (2) provided with an adhesive (3) on one surface thereof is wound, a take-up reel (30) for taking up the transfer tape, and a transfer head (40) for transferring the adhesive onto the transfer target surface. The transfer head is pivotally supported at one end thereof and includes a first transfer section (45a) formed at a free end portion thereof and having a circular arc-shaped contact surface for mutual contact with the transfer target surface, a second transfer section (45b) having a flat transfer surface (45c) between the first transfer section and a pivot portion of the transfer head, and a spring member (46) for urging the free end portion of the transfer head toward the transfer target surface. Pressing the second transfer section onto the transfer target surface against the resilience of the spring member performs spot-like transfer of the adhesive onto the transfer target surface. Linear transfer of the adhesive onto the transfer target surface is performed by moving the first transfer section with the first transfer section pressed to the transfer target surface by the resilience of the spring member.
摘要翻译： 粘合剂转移装置可以通过交替选择的点状转印和线性转印中的任一个通过简单的操作将粘合剂可靠地转印到转印目标表面上。 粘合剂输送装置具有供给卷轴（20），卷绕有在其一个表面上设置有粘合剂（3）的背衬材料（2）的转移带（1），卷取卷取机（30） 以及用于将粘合剂转印到转印目标表面上的转印头（40）。 传送头在其一端枢转地支撑，并且包括形成在其自由端部处并具有与转印目标表面相互接触的圆弧形接触表面的第一传送部分（45a），第二传送部分（45b） ），在第一转印部分和转印头的枢转部分之间具有平坦的转印表面（45c），以及用于将转印头的自由端部朝向转印目标表面推压的弹簧部件（46）。 克服弹簧部件的弹性将第二转印部压在转印目标表面上，将粘合剂进行点状转印到转印目标表面上。 粘合剂在转印目标表面上的线性转移是通过使第一转印部分通过弹簧构件的弹性将第一转印部分按压到转印目标表面来进行的。
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公开(公告)号：US5358576A
公开(公告)日：1994-10-25
申请号：US157112
申请日：1980-06-06
CPC分类号： C22C45/04 , H01F1/15316
摘要： In amorphous materials including at least one iron-transition metal of Fe, Co, and Ni, and at least one metalloid of B, C, Si, and P, excellent magnetic characteristics can be provided subject to the condition that 0.5 to 10 atomic % of the above-described iron-transition metals are substituted by Mn. In addition, when the amorphous material partially substituted with Mn as described above is further comprised of at least one element selected from Groups IIIa, IVa, Va, and VIa in the periodic table, the crystallization temperature is considerably raised.
摘要翻译： 在包含Fe，Co和Ni的至少一种铁过渡金属和至少一种B，C，Si和P的准金属的无定形材料中，可以提供优选的磁特性，条件是以0.5至10原子％ 的上述铁 - 过渡金属被Mn取代。 此外，当如上所述被Mn部分取代的无定形材料进一步包含选自元素周期表中的IIIa，IVa，Va和VIa族中的至少一种元素时，结晶温度显着升高。
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公开(公告)号：US4288260A
公开(公告)日：1981-09-08
申请号：US134132
申请日：1980-03-26
申请人： Harufumi Senno , Hiroshi Sakakima , Yukihiro Yanagiuchi , Tsuneo Inoue , Masatsugu Yamaguchi , Eiichi Hirota
发明人： Harufumi Senno , Hiroshi Sakakima , Yukihiro Yanagiuchi , Tsuneo Inoue , Masatsugu Yamaguchi , Eiichi Hirota
CPC分类号： H01F1/15341 , C21D9/56 , C21D9/564
摘要： A method of heat treatments of amorphous alloy ribbons comprises the sequential steps of; grinding amorphous alloy ribbon continuously fed at a predetermined speed (V) selectively varied in the range of 1 cm/sec.ltoreq.V.ltoreq.50 cm/sec, to uniformly finish the ribbon, and successively, heat-treating the ribbon with its surface contacting a stationary or rotating heating body having a surface temperature (T) defined in the range of (T.sub.cry -200.degree. C.).ltoreq.V.ltoreq.(T.sub.cry +50.degree. C.), where T.sub.cry is a crystallization point temperature of the alloy, to uniformly enhance the magnetic properties of the ribbon, and to remove the specific curlings inherently caused by so-called splat cooling manufacturing method, without causing any developments of brittleness of the ribbon mentioned above.
摘要翻译： 非晶合金带的热处理方法包括以下步骤： 在以1cm / sec×50cm / sec的范围内选择性地变化的以预定速度（V）连续进料的非晶态合金带的研磨，以使丝条均匀地完成，并且随后用 其表面接触表面温度（T）在（Tcry-200℃）=（Tcry + 50℃）范围内的固定或旋转加热体，其中Tcry为结晶 以均匀地提高带的磁特性，并且消除由所谓的丝锥冷却制造方法固有地引起的特定卷曲，而不会引起上述带的脆性的任何变化。
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