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12 条记录 (耗时 0.032 秒)

    Reverse damascene process
    3.
    发明授权
    Reverse damascene process 有权
    反向镶嵌工艺

    公开(公告)号：US08518818B2

    公开(公告)日：2013-08-27

    申请号：US13234299

    申请日：2011-09-16

    申请人： You-Hua Chou ,  Min Hao Hong ,  Jian-Shin Tsai ,  Miao-Cheng Liao ,  Hsiang Hsiang Ko

    发明人： You-Hua Chou ,  Min Hao Hong ,  Jian-Shin Tsai ,  Miao-Cheng Liao ,  Hsiang Hsiang Ko

    IPC分类号： H01L21/4763

    CPC分类号： H01L23/53238 ,  H01L21/768 ,  H01L21/76841 ,  H01L21/76852 ,  H01L21/76885 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The present disclosure relates to a method of forming a back-end-of-the-line metallization layer. The method is performed by forming a plurality of freestanding metal layer structures (i.e., metal layer structures not surrounded by a dielectric material) on a semiconductor substrate within an area defined by a patterned photoresist layer. A diffusion barrier layer is deposited onto the metal layer structure in a manner such that the diffusion barrier layer conforms to the top and sides of the metal layer structure. A dielectric material is formed on the surface of the substrate to fill areas between metal layer structures. The substrate is planarized to remove excess metal and dielectric material and to expose the top of the metal layer structure.

    摘要翻译： 本公开涉及一种形成后端金属化层的方法。 通过在由图案化的光致抗蚀剂层限定的区域内的半导体衬底上形成多个独立金属层结构（即，不被电介质材料包围的金属层结构）来执行该方法。 扩散阻挡层以使得扩散阻挡层符合金属层结构的顶部和侧面的方式沉积到金属层结构上。 在基板的表面上形成电介质材料以填充金属层结构之间的区域。 将衬底平坦化以除去多余的金属和电介质材料并露出金属层结构的顶部。

    STRESSED SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING
    6.
    发明申请
    STRESSED SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING 有权
    应力半导体器件及其制造方法

    公开(公告)号：US20120292639A1

    公开(公告)日：2012-11-22

    申请号：US13111732

    申请日：2011-05-19

    申请人： Miao-Cheng Liao ,  Min Hao Hong ,  Hsiang Hsiang Ko ,  Kei-Wei Chen ,  Ying-Lang Wang

    发明人： Miao-Cheng Liao ,  Min Hao Hong ,  Hsiang Hsiang Ko ,  Kei-Wei Chen ,  Ying-Lang Wang

    IPC分类号： H01L29/06 ,  H01L29/24 ,  H01L21/762

    CPC分类号： H01L21/823807 ,  H01L21/0245 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/0262

    摘要： A semiconductor device and method of manufacturing a semiconductor device is disclosed. The exemplary semiconductor device and method for fabricating the semiconductor device enhance carrier mobility. The method includes providing a substrate and forming a dielectric layer over the substrate. The method further includes forming a first trench within the dielectric layer, wherein the first trench extends through the dielectric layer and epitaxially (epi) growing a first active layer within the first trench and selectively curing with a radiation energy the dielectric layer adjacent to the first active layer.

    摘要翻译： 公开了一种制造半导体器件的半导体器件和方法。 用于制造半导体器件的示例性半导体器件和方法增强载流子迁移率。 该方法包括提供衬底并在衬底上形成电介质层。 该方法还包括在电介质层内形成第一沟槽，其中第一沟槽延伸穿过电介质层并且外延（epi）在第一沟槽内生长第一有源层，并用辐射能选择性地固化与第一沟槽相邻的介电层 活动层

    Stressed semiconductor device and method of manufacturing
    7.
    发明授权
    Stressed semiconductor device and method of manufacturing 有权
    强调半导体器件及其制造方法

    公开(公告)号：US08455883B2

    公开(公告)日：2013-06-04

    申请号：US13111732

    申请日：2011-05-19

    申请人： Miao-Cheng Liao ,  Min Hao Hong ,  Hsiang Hsiang Ko ,  Kei-Wei Chen ,  Ying-Lang Wang

    发明人： Miao-Cheng Liao ,  Min Hao Hong ,  Hsiang Hsiang Ko ,  Kei-Wei Chen ,  Ying-Lang Wang

    IPC分类号： H01L29/15 ,  H01L31/052 ,  H01L21/331

    CPC分类号： H01L21/823807 ,  H01L21/0245 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/0262

    摘要： A semiconductor device and method of manufacturing a semiconductor device is disclosed. The exemplary semiconductor device and method for fabricating the semiconductor device enhance carrier mobility. The method includes providing a substrate and forming a dielectric layer over the substrate. The method further includes forming a first trench within the dielectric layer, wherein the first trench extends through the dielectric layer and epitaxially (epi) growing a first active layer within the first trench and selectively curing with a radiation energy the dielectric layer adjacent to the first active layer.

    摘要翻译： 公开了一种制造半导体器件的半导体器件和方法。 用于制造半导体器件的示例性半导体器件和方法增强载流子迁移率。 该方法包括提供衬底并在衬底上形成电介质层。 该方法还包括在电介质层内形成第一沟槽，其中第一沟槽延伸穿过电介质层并且外延（epi）在第一沟槽内生长第一有源层，并用辐射能选择性地固化与第一沟槽相邻的介电层 活动层

    Devices having a cavity structure and related methods
    8.
    发明申请
    Devices having a cavity structure and related methods 有权
    具有腔结构和相关方法的器件

    公开(公告)号：US20100255187A1

    公开(公告)日：2010-10-07

    申请号：US12662681

    申请日：2010-04-28

    申请人： You-Hua Chou ,  Hsiang Hsiang Ko ,  Hung Jui Chang ,  Yi Ming Chen ,  Hsien-Wei Lin

    发明人： You-Hua Chou ,  Hsiang Hsiang Ko ,  Hung Jui Chang ,  Yi Ming Chen ,  Hsien-Wei Lin

    IPC分类号： B05D5/12

    CPC分类号： H01M8/1097 ,  H01M2008/1095 ,  Y02P70/56

    摘要： A structure having a cavity or enclosed space is fabricated by forming a recessed region in a surface of a substrate, and providing a first layer adjacent the recessed region. A liquid mixture including first and second components is supplied to the recessed region. The first component has a higher chemical affinity to the first layer than the second component such that the first component separates from the second component and adheres to an edge portion of the first layer. The substrate may then be heated to remove the second component from the recessed region through evaporation. As a result, the first component remains as a second layer adhering to the edge portion of the first layer and covering the recessed region, thereby defining a cavity or enclosed space with the recessed region. Unique structures including such cavities may be employed to realize a capacitor having a fluid, as opposed to solid, dielectric material, in order to increase the capacitance of the capacitor. Alternatively, such cavities may confine the flow of gases within narrow grooves of a substrate to realize a fuel cell having reduced size.

    摘要翻译： 通过在衬底的表面中形成凹陷区域并且提供与凹陷区域相邻的第一层来制造具有空腔或封闭空间的结构。 包含第一和第二组分的液体混合物被供应到凹陷区域。 第一组分比第二组分具有比第一组分更高的化学亲和力，使得第一组分与第二组分分离并粘附到第一层的边缘部分。 然后可以加热衬底以通过蒸发从凹陷区域去除第二组分。 结果，第一部件保持作为粘附到第一层的边缘部分并覆盖凹陷区域的第二层，由此限定具有凹陷区域的空腔或封闭空间。 包括这种空穴的独特结构可以用于实现与固体介电材料相反的流体的电容器，以便增加电容器的电容。 或者，这样的空腔可以将气体流限制在基板的窄槽内，以实现具有减小的尺寸的燃料电池。

    Devices having a cavity structure and related methods
    9.
    发明授权
    Devices having a cavity structure and related methods 有权
    具有腔结构和相关方法的器件

    公开(公告)号：US08497183B2

    公开(公告)日：2013-07-30

    申请号：US12662681

    申请日：2010-04-28

    申请人： You-Hua Chou ,  Hsiang Hsiang Ko ,  Hung Jui Chang ,  Yi Ming Chen ,  Hsien-Wei Lin

    发明人： You-Hua Chou ,  Hsiang Hsiang Ko ,  Hung Jui Chang ,  Yi Ming Chen ,  Hsien-Wei Lin

    IPC分类号： H01L21/76

    CPC分类号： H01M8/1097 ,  H01M2008/1095 ,  Y02P70/56

    摘要： A method of making a device. The method comprises providing a first layer including a first material on a surface of a substrate, removing a portion of the first layer and a corresponding portion of the substrate to form an opening in the first layer and a recessed portion in the surface of the substrate, and supplying a liquid mixture to the opening and the recessed portion. The liquid mixture includes a first component having a first chemical affinity to the first material and a second component having a second chemical affinity to the first material, which is smaller than the first chemical affinity. The method also includes removing the second component and forming a second layer including the first component. The second layer covers the recessed portion and adheres to an edge portion of the first layer, such that the second layer and the recessed portion define a cavity.

    摘要翻译： 制造装置的方法。 该方法包括在衬底的表面上提供包括第一材料的第一层，去除第一层的一部分和衬底的对应部分以在第一层中形成开口，并且在衬底的表面中形成凹陷部分 并且将液体混合物供应到开口和凹部。 液体混合物包括对第一材料具有第一化学亲和力的第一组分和对第一材料具有第二化学亲和力的第二组分，其小于第一化学亲和力。 该方法还包括移除第二部件并形成包括第一部件的第二层。 第二层覆盖凹部并粘附到第一层的边缘部分，使得第二层和凹部限定一个空腔。